LMV1032_15 TI1 | Alldatasheet
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x x x xx x x x xxx xxxx IC VCC VOUT LMV1032 www.ti.com SNAS233G –DECEMBER 2003–REVISED MAY 2013 LMV1032-06/LMV1032-15/LMV1032-25Amplifiersfor3-WireAnalogElectretMicrophones Check forSamples: LMV1032 1FEATURES DESCRIPTION The LMV1032s arean audioamplifierseriesforsmall 2• (TypicalLMV1032-15, 1.7VSupply;Unless form factorelectretmicrophones.They are designedOtherwiseNoted) to replacethe JFET preamp currentlybeing used.• Output VoltageNoise (A-weighted)−89 dBV The LMV1032 seriesisidealforextendedbatterylife
- Low Supply Current60 μA applications,such as a Bluetoothcommunicationlink. The additionofa thirdpintoan electretmicrophones• Supply Voltage1.7Vto5V thatincorporatesan LMV1032 allowsfora dramatic• PSRR 70 dB reductioninsupplycurrentas compared totheJFET
- SignaltoNoise Ratio61 dB equipped electretmicrophone.Microphone supply currentis thus reduced to 60 µA, assuringlonger• InputCapacitance2 pF batterylife.The LMV1032 seriesis specifiedfor• InputImpedance >100 M Ω supply voltagesfrom 1.7V to 5V, and has fixed
- Output Impedance <200Ω voltagegainsof6 dB,15 dB and 25 dB.
- Max InputSignal170 mV PP The LMV1032 seriesofferslow outputimpedance
- Temperature Range −40°C to85°C over the voice bandwidth,excellentpower supply rejection(PSRR),and stabilityovertemperature.• Large Dome 4-Bump DSBGA Package with Improved Adhesion Technology. The devicesareofferedinspace saving4-bump ultra thinDSBGA leadfreepackages and are thusideally APPLICATIONS suited for the form factorof miniatureelectret microphone packages. These extremelyminiature• MobileCommunications -Bluetooth packages have the Large Dome Bump (LDB)• Automotive Accessories technology.ThisDSBGA technologyisdesignedfor microphonePCBs requiring1 kg adhesioncriteria.• CellularPhones
- PDAs
- Accessory Microphone Products Block Diagram ElectretMicrophone These deviceshave limitedbuilt-inESD protection.The leadsshouldbe shortedtogetherorthedeviceplacedinconductivefoam duringstorageorhandlingtopreventelectrostaticdamage totheMOS gates. Pleasebe aware thatan importantnoticeconcerningavailability,standardwarranty,and use incriticalapplicationsof Texas Instrumentssemiconductorproductsand disclaimerstheretoappearsattheend ofthisdatasheet. 2Alltrademarksarethepropertyoftheirrespectiveowners. PRODUCTION DATA informationiscurrentas ofpublicationdate. Copyright© 2003–2013,Texas InstrumentsIncorporatedProductsconform to specificationsper the terms of the Texas Instrumentsstandardwarranty.Productionprocessingdoes not necessarilyincludetestingofallparameters.
SNAS233G –DECEMBER 2003–REVISED MAY 2013 www.ti.com AbsoluteMaximum Ratings(1)(2) ESD Tolerance(3) Human Body Model 2500V Machine Model 250V SupplyVoltage VDD -GND 5.5V StorageTemperatureRange −65°C to150°C JunctionTemperature(4) 150°C max MountingTemperature InfraredorConvection(20sec.) 235°C (1) AbsoluteMaximum Ratingsindicatelimitsbeyond whichdamage tothedevicemay occur.OperatingRatingsindicateconditionsfor whichthedeviceisintendedtobe functional,butspecificperformanceisnotensured.Forensuredspecificationsand thetest conditions,see theElectricalCharacteristics. (2) IfMilitary/Aerospacespecifieddevicesarerequired,pleasecontacttheTexas InstrumentsSalesOffice/Distributorsforavailabilityand specifications. (3) The Human Body Model (HBM) is1.5kΩ inserieswith100 pF.The Machine Model is0Ω inserieswith200 pF. (4) The maximum power dissipationisa functionofTJ(MAX) ,θJA and TA.The maximum allowablepower dissipationatany ambient temperatureisPD = (TJ(MAX) -TA)/θJA.Allnumbers applyforpackagessoldereddirectlyontoa PC board. OperatingRatings(1) SupplyVoltage 1.7Vto5V TemperatureRange −40°C to+85°C (1) AbsoluteMaximum Ratingsindicatelimitsbeyond whichdamage tothedevicemay occur.OperatingRatingsindicateconditionsfor whichthedeviceisintendedtobe functional,butspecificperformanceisnotensured.Forensuredspecificationsand thetest conditions,see theElectricalCharacteristics. 1.7Vand 5V ElectricalCharacteristics(1) Unlessotherwisespecified,alllimitsensuredforTJ = 25°C and VDD = 1.7Vand 5V.Boldfacelimitsapplyatthetemperature extremes. Symbol Parameter Conditions Min (2) Typ (3) Max (2) Units IDD SupplyCurrent VIN = GND 60 85 μA100 SNR SignaltoNoiseRatio VDD = 1.7V LMV1032-06 58 VIN = 18 mV PP LMV1032-15 61f= 1 kHz LMV1032-25 61 dB VDD = 5V LMV1032-06 59 VIN = 18 mV PP LMV1036-15 61f= 1 kHz LMV1032-25 62 PSRR Power SupplyRejectionRatio 1.7V< VDD < 5V LMV1032-06 65 75 LMV1032-15 60 70 dB55 LMV1032-25 55 65 VIN Max InputSignal f= 1 kHz and THD+N < LMV1032-06 300 1% LMV1032-15 170 mV PP LMV1032-25 60 fLOW Lower −3 dB RollOffFrequency R SOURCE = 50Ω 70 HzVIN = 18 mV PP fHIGH Upper −3 dB RollOffFrequency R SOURCE = 50Ω LMV1032-06 120 kHzVIN = 18 mV PP LMV1032-15 75 LMV1032-25 21 (1) ElectricalTablevaluesapplyonlyforfactorytestingconditionsatthetemperatureindicated.Factorytestingconditionsresultinvery limitedself-heatingofthedevicesuch thatTJ = TA.No specificationofparametricperformanceisindicatedintheelectricaltablesunder conditionsofinternalself-heatingwhere TJ > TA. (2) Alllimitsarespecifiedby designorstatisticalanalysis. (3) Typicalvaluesrepresentthemost likelyparametricnorm.
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X OUTPUT LMV1032 www.ti.com SNAS233G –DECEMBER 2003–REVISED MAY 2013 1.7Vand 5V ElectricalCharacteristics(1)(continued) Unlessotherwisespecified,alllimitsensuredforTJ = 25°C and VDD = 1.7Vand 5V.Boldfacelimitsapplyatthetemperature extremes. Symbol Parameter Conditions Min (2) Typ (3) Max (2) Units en OutputNoise A-Weighted LMV1032-06 −97 LMV1032-15 −89 dBV LMV1032-25 −80 VOUT OutputVoltage VIN = GND LMV1032-06 100 300 500 LMV1032-15 250 500 750 mV LMV1032-25 300 600 1000 R O OutputImpedance f= 1 kHz <200 Ω IO OutputCurrent VDD = 1.7V,VOUT = 1.7V,Sinking 0.9 2.3 0.5 VDD = 1.7V,VOUT = 0V,Sourcing 0.3 0.64 0.2 mA VDD = 5V,VOUT = 1.7V,Sinking 0.9 2.4 0.5 VDD = 5V,VOUT = 0V,Sourcing 0.4 1.46 0.1 THD TotalHarmonicDistortion f= 1 kHz LMV1032-06 0.11 VIN = 18 mV PP LMV1032-15 0.13 % LMV1032-25 0.35 C IN InputCapacitance 2 pF ZIN InputImpedance >100 M Ω AV Gain f= 1 kHz LMV1032-06 5.5 6.2 6.7 VIN = 18 mV PP 4.5 7.7 LMV1032-15 14.8 15.4 16 dB14 17 LMV1032-25 24.8 25.5 26.2 24 27 Connection Diagram Large Dome 4-Bump DSBGA Figure1. Top View Note:
- Pinnumbers arereferencedtopackage markingtextorientation.
- The actualphysicalplacementofthepackage markingwillvaryslightlyfrom parttopart.The package will designatethedatecode and willvaryconsiderably.Package markingdoes notcorrelatetodevicetypeinany way. Copyright© 2003–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 3 ProductFolderLinks:LMV1032
FREQUENCY (Hz) -15 GAIN (dB) 100k10k100 -10 PHASE GAIN 150 300 450 400 250 200 350 PHASE (° ) 10 1k 1M FREQUENCY (Hz) -15 GAIN (dB) 100k10k100 -10 150 450 400 350 200 300 250 PHASE (° ) GAIN PHASE SUPPLY VOLTAGE (V) SUPPLY CURRENT ( PA) -40°C 25°C 85°C 10.00 10 1k 1M FREQUENCY (Hz) -30.00 -15.00GAIN (dB) 100k10k100 0.00 -5.00 -20.00 -25.00 -10.00 5.00 180 -180 -45 -90 -135 135 PHASE (° ) GAIN PHASE SUPPLY VOLTAGE (V) SUPPLY CURRENT ( PA) 85°C 25°C -40°C SUPPLY VOLTAGE (V) SUPPLY CURRENT ( PA) 85°C 25°C -40°C LMV1032 SNAS233G –DECEMBER 2003–REVISED MAY 2013 www.ti.com TypicalPerformance Characteristics Unlessotherwisespecified,VS = 1.7V,singlesupply,TA = 25°C Supply Currentvs.Supply Voltage(LMV1032-06) Supply Currentvs.Supply Voltage(LMV1032-15) Figure2. Figure3.' Supply Currentvs.Supply Voltage(LMV1032-25) Closed Loop Gain and Phase vs.Frequency (LMV1032-06) Figure4. Figure5. Closed Loop Gain and Phase vs.Frequency (LMV1032-15) Closed Loop Gain and Phase vs.Frequency (LMV1032-25) Figure6. Figure7.
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FREQUENCY (Hz) 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 THD + N (%) VIN = 18 mVPP 10 100 1k 10k 100k FREQUENCY (Hz) 0.0 0.1 0.2 0.3 0.4 0.5 0.6 THD+N (%) VIN = 18 mVPP 10 100 1k 10k 100k FREQUENCY (Hz) 100 120 PSRR (dB) 10 100 1k 10k 100k FREQUENCY (Hz) 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 THD+N (%) VIN = 18 mVPP 10 100 1k 10k 100k FREQUENCY (Hz) 100 120 PSRR (dB) 10 100 1k 10k 100k FREQUENCY (Hz) 100 120 PSRR (dB) LMV1032 www.ti.com SNAS233G –DECEMBER 2003–REVISED MAY 2013 TypicalPerformance Characteristics(continued) Unlessotherwisespecified,VS = 1.7V,singlesupply,TA = 25°C Power Supply RejectionRatiovs.Frequency (LMV1032-06) Power Supply RejectionRatiovs.Frequency (LMV1032-15) Figure8.\\ Figure9. Power Supply RejectionRatiovs.Frequency (LMV1032-25) TotalHarmonic Distortionvs.Frequency (LMV1032-06) Figure10. Figure11. TotalHarmonic Distortionvs.Frequency (LMV1032-15) TotalHarmonic Distortionvs.Frequency (LMV1032-25) Figure12. Figure13. Copyright© 2003–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 5 ProductFolderLinks:LMV1032
NOISE (dBV/ Hz) 10 100 1k 10k 100k FREQUENCY (Hz) -150 -140 -130 -120 -110 -100 -90 -80 NOISE (dBV/ Hz) 10 100 1k 10k 100k FREQUENCY (Hz) -150 -140 -130 -120 -110 -100 -90 -80 0 20 40 60 80 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 THD+N (%) INPUT VOLTAGE (mV PP ) f = 1 kHz 10 100 1k 10k 100k FREQUENCY (Hz) -105 -100 -150 -145 -140 -135 -130 -125 -120 -115 -110 NOISE (dBV/ Hz) 0 50 100 150 200 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 THD+N (%) INPUT VOLTAGE (mV PP ) f = 1 kHz 0 50 100 150 200 250 300 350 400 INPUT VOLTAGE (mV PP ) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 THD+N (%) f = 1 kHz LMV1032 SNAS233G –DECEMBER 2003–REVISED MAY 2013 www.ti.com TypicalPerformance Characteristics(continued) Unlessotherwisespecified,VS = 1.7V,singlesupply,TA = 25°C TotalHarmonic Distortionvs.InputVoltage(LMV1032-06) TotalHarmonic Distortionvs.InputVoltage(LMV1032-15) Figure14. Figure15. TotalHarmonic Distortionvs.InputVoltage(LMV1032-25) Output VoltageNoise vs.Frequency (LMV1032-06) Figure16. Figure17. Output VoltageNoise vs.Frequency (LMV1032-15) Output VoltageNoise vs.Frequency (LMV1032-25) Figure18. Figure19.
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FREQUENCY (Hz) -70 -60 -50 -40 -30 -20 -10 dBV GND DIAPHRAGM AIRGAP BACKPLATEELECTRET CONNECTOR LMV1032 x x x xx x x x xxx xxxx IC VCC VOUT LMV1032 www.ti.com SNAS233G –DECEMBER 2003–REVISED MAY 2013 APPLICATION SECTION LOW CURRENT The LMV1032 has a low supplycurrentwhich allowsfora longerbatterylife.The low supplycurrentof60µA makes thisamplifieroptimalformicrophoneapplicationswhichneed tobe alwayson. BUILT-INGAIN The LMV1032 isofferedinthespace savingsmallDSBGA package which fitsperfectlyintothemetalcan ofa microphone.ThisallowstheLMV1032 tobe placedon thePCB insidethemicrophone. The bottomsideofthePCB has thepinsthatconnectthesupplyvoltagetotheamplifierand make theoutput available.The inputoftheamplifierisconnectedtothemicrophoneviathePCB. Figure20. Built-inGain A-WEIGHTED FILTER The human earhas a frequencyrangefrom20 Hz toabout20 kHz.Withinthisrangethesensitivityofthehuman ear isnotequalforeach frequency.To approachthehearingresponseweightingfiltersare introduced.One of thosefiltersistheA-weightedfilter. The A-weightedfilterisusuallyused insignal-to-noiseratiomeasurements,where sound iscompared todevice noise.Itimprovesthecorrelationofthemeasured datatothesignal-to-noiseratioperceivedby thehuman ear. Figure21. A-Weighted Filter Copyright© 2003–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 7 ProductFolderLinks:LMV1032
[dBPa] -94dB SENSITIVITY [dBV/Pa] SOUND PRESSURE [dB SPL] VOLTAGE [dBV] A-WEIGHTED FILTER 5pF LMV1032 SNAS233G –DECEMBER 2003–REVISED MAY 2013 www.ti.com MEASURING NOISE AND SNR The overallnoiseof the LMV1032 ismeasured withinthe frequencyband from 10 Hz to 22 kHz usingan A- weightedfilter.The inputoftheLMV1032 isconnectedtogroundwitha 5 pF capacitor. Figure22. Noise Measurement Setup The signal-to-noiseratio(SNR) ismeasured witha 1 kHz inputsignalof18 mV PP usingan A-weightedfilter.This representsa sound pressurelevelof94 dB SPL. No inputcapacitorisconnected. SOUND PRESSURE LEVEL The volume ofsound appliedtoa microphoneisusuallystatedas thepressurelevelwithrespecttothethreshold ofhearingofthehuman ear.The sound pressurelevel(SPL)indecibelsisdefinedby: Sound pressurelevel(dB)= 20 logPm /PO Where, Pm isthemeasured sound pressure PO isthethresholdofhearing(20μPa) In orderto be able to calculatethe resultingoutputvoltageof the microphone fora givenSPL, the sound pressureindB SPL needs tobe convertedtotheabsolutesound pressureindBPa. Thisisthesound pressure levelindecibelswhichisreferredtoas 1 Pascal(Pa). The conversionisgivenby: dBPa = dB SPL + 20*log20 μPa dBPa = dB SPL -94 dB Translationfrom absolutesound pressureleveltoa voltageisspecifiedby thesensitivityofthemicrophone.A conventionalmicrophonehas a sensitivityof−44 dBV/Pa. Figure23. dB SPL todBV Conversion
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FREQUENCY (Hz) -15 GAIN (dB) 100k10k100 -10 PHASE GAIN 150 300 450 400 250 200 350 PHASE (° ) LMV1032 www.ti.com SNAS233G –DECEMBER 2003–REVISED MAY 2013 Example:Busy trafficis70 dB SPL VOUT = 70 −94 −44 = −68 dBV Thisisequivalentto1.13mV PP SincetheLMV1032-15 has a gainof5.6(15 dB) overtheJFET, theoutputvoltageofthemicrophoneis6.35 mV PP .By replacingtheJFET withtheLMV1032-15, thesensitivityofthemicrophoneis−29 dBV/Pa (−44 + 15). LOW FREQUENCY CUT OFF FILTER To reducenoiseon theoutputofthemicrophonea low cutfilterhas been implementedintheLMV1032. This filterreducestheeffectofwindand handlingnoise. It'salsohelpfulto reduce the proximityeffectindirectionalmicrophones.Thiseffectoccurswhen the sound sourceisverycloseto the microphone.The lowerfrequenciesare amplifiedwhich givesa bass sound.This amplificationcan cause an overload,whichresultsina distortionofthesignal. Figure24. Gain vs.Frequency The LMV1032 isoptimizedtobe used inaudioband applications.The LMV1032 providesa flatgainresponse withintheaudioband and offerslinearityand excellenttemperaturestability. ADVANTAGE OF THREE PINS The LMV1032 ECM solutionhas threepinsinsteadofthetwo pinsprovidedinthecase ofa JFET solution.The thirdpin providesthe advantage of a low supplycurrent,high PSRR and eliminatesthe need foradditional components. Noisepick-upby a microphoneina cellphone isa well-knownproblem.A conventionalJFET circuitissensitive fornoisepick-upbecause of itshighoutputimpedance.The outputimpedance isusuallyaround 2.2 kΩ. By providingseparateoutputand supplypinsa much loweroutputimpedance isachievedand thereforeisless sensitivetonoisepick-up. RF noise is among othercaused by non-linearbehavior.The non-linearbehaviorof the amplifierat high frequencies,wellabove theusablebandwidthofthedevice,causes AM demodulationofhighfrequencysignals. The AM modulationcontainedinsuch signalsfoldsback intothe audioband, therebydisturbingthe intended microphonesignal.The GSM signalofa cellphone issuch an AM-modulated signal.The modulationfrequency of216 Hz and itsharmonicscan be observedintheaudioband.Thistypeofnoiseiscalledbumblebee noise. EXTERNAL PRE-AMPLIFIER APPLICATION The LMV1032 can alsobe used outsideofan ECM as a space savingexternalpre-amplifier.Inthisapplication, theLMV1032 followsa phantom biasedJFET microphoneinthecircuit.Thisisshown inFigure25.The inputof theLMV1032 isconnectedtothemicrophoneviathe2.2µF capacitor.The advantageofthiscircuitoverone withonlya JFET microphonearetheadditionalgainand thehighpass filtersuppliedby theLMV1032. The high pass filtermakes the outputsignalmore robustand lesssensitiveto low frequencydisturbances.In this configurationtheLMV1032 shouldbe placedas closeas possibletothemicrophone. Copyright© 2003–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 9 ProductFolderLinks:LMV1032
2.2 k: 2.2 PF VOUT GND LMV1032 SNAS233G –DECEMBER 2003–REVISED MAY 2013 www.ti.com Figure25. LMV1032 as ExternalPre-Amplifier
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www.ti.com SNAS233G –DECEMBER 2003–REVISED MAY 2013
REVISION HISTORY
Changes from RevisionF (May 2013)toRevisionG Page Copyright© 2003–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 11 ProductFolderLinks:LMV1032
www.ti.com 9-Aug-2013 Addendum-Page 1 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Drawing Pins Package Qty Eco Plan (2) Lead/Ball Finish MSL Peak Temp (3) Op Temp (°C) Device Marking (4/5) Samples LMV1032UP-06/NOPB ACTIVE DSBGA YPC 4 250 Green (RoHS & no Sb/Br) SNAGCU Level-1-260C-UNLIM LMV1032UP-15/NOPB ACTIVE DSBGA YPC 4 250 Green (RoHS & no Sb/Br) SNAGCU Level-1-260C-UNLIM LMV1032UP-25/NOPB ACTIVE DSBGA YPC 4 250 Green (RoHS & no Sb/Br) SNAGCU Level-1-260C-UNLIM LMV1032UPX-06/NOPB ACTIVE DSBGA YPC 4 3000 Green (RoHS & no Sb/Br) SNAGCU Level-1-260C-UNLIM -40 to 85 LMV1032UPX-25/NOPB ACTIVE DSBGA YPC 4 3000 Green (RoHS & no Sb/Br) SNAGCU Level-1-260C-UNLIM -40 to 85 LMV1032UR-15/NOPB ACTIVE DSBGA YPD 4 250 Green (RoHS & no Sb/Br) SNAGCU Level-1-260C-UNLIM LMV1032UR-25/NOPB ACTIVE DSBGA YPD 4 250 Green (RoHS & no Sb/Br) SNAGCU Level-1-260C-UNLIM LMV1032URX-15/NOPB ACTIVE DSBGA YPD 4 3000 Green (RoHS & no Sb/Br) SNAGCU Level-1-260C-UNLIM -40 to 85 LMV1032URX-25/NOPB ACTIVE DSBGA YPD 4 3000 Green (RoHS & no Sb/Br) SNAGCU Level-1-260C-UNLIM -40 to 85 (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability information and additional product content details. TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above. Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material)
www.ti.com 9-Aug-2013 Addendum-Page 2 (3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. (4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device. (5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation of the previous line and the two combined represent the entire Device Marking for that device. Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release. In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
*All dimensions are nominal Device Package Type Package Drawing Pins SPQ Reel Diameter (mm) Reel Width W1 (mm) (mm) (mm) (mm) (mm) W (mm) Pin1 Quadrant PACKAGE MATERIALS INFORMATION www.ti.com 12-Aug-2013 Pack Materials-Page 1
*All dimensions are nominal Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) LMV1032UP-06/NOPB DSBGA YPC 4 250 210.0 185.0 35.0 LMV1032UP-15/NOPB DSBGA YPC 4 250 210.0 185.0 35.0 LMV1032UP-25/NOPB DSBGA YPC 4 250 210.0 185.0 35.0 LMV1032UPX-06/NOPB DSBGA YPC 4 3000 210.0 185.0 35.0 LMV1032UPX-25/NOPB DSBGA YPC 4 3000 210.0 185.0 35.0 LMV1032UR-15/NOPB DSBGA YPD 4 250 210.0 185.0 35.0 LMV1032UR-25/NOPB DSBGA YPD 4 250 210.0 185.0 35.0 LMV1032URX-15/NOPB DSBGA YPD 4 3000 210.0 185.0 35.0 LMV1032URX-25/NOPB DSBGA YPD 4 3000 210.0 185.0 35.0 PACKAGE MATERIALS INFORMATION www.ti.com 12-Aug-2013 Pack Materials-Page 2
www.ti.com UPA04XXX (Rev C) 0.350±0.045 D E 4215139/A 12/12 A. All linear dimensions are in millimeters. Dimensioning and tolerancing per ASME Y14.5M-1994. B. This drawing is subject to change without notice. NOTES: D: Max = E: Max = 1.184 mm, Min = 1.184 mm, Min = 1.123 mm 1.123 mm
www.ti.com URA04XXX (Rev D) 0.350±0.045 D E 4215141/A 12/12 A. All linear dimensions are in millimeters. Dimensioning and tolerancing per ASME Y14.5M-1994. B. This drawing is subject to change without notice. NOTES: D: Max = E: Max = 1.184 mm, Min = 1.184 mm, Min = 1.123 mm 1.123 mm
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