LMV1015

LMV1015 NSC | Alldatasheet

Document overview

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Technical content

Features

(Typical LMV1015-15, 2.2V supply, RL = 2.2 kΩ, C = 2.2 µF, VIN =1 8m VPP, unless otherwise specified) n Supply voltage 2V - 5V n Supply current <180 µA n Signal to noise ratio (A-weighted) 60 dB n Output voltage noise (A-weighted) −89 dBV n Total harmonic distortion 0.09% n Voltage gain — LMV1015-15 15.6 dB — LMV1015-25 23.8 dB n Temperature range −40˚C to 85˚C n Large Dome 4-Bump micro SMD package with improved adhesion technology.

Applications

n Accessory microphone products Schematic Diagram 20128901 Built-In Gain Electret Microphone 20128902 May 2005 LMV1015 Analog Series Built-in Gain IC’s for High Sensitivity 2-Wire Microphones © 2005 National Semiconductor Corporation DS201289 www.national.com

Absolute Maximum Ratings(Note 1) If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/ Distributors for availability and specifications. ESD Tolerance (Note 2) Human Body Model 2500V Machine Model 250V Supply Voltage V DD - GND 5.5V Storage Temperature Range −65˚C to 150˚C Junction Temperature (Note 6) 150˚C max Mounting Temperature Infrared or Convection (20 sec.) 235˚C Operating Ratings(Note 1) Supply Voltage 2V to 5V Operating Temperature Range −40˚C to 85˚C Thermal Resistance (θ JA) 368˚C/W 2.2V Electrical Characteristics(Note 3) Unless otherwise specified, all limits guaranteed for T J = 25˚C, VDD = 2.2V, VIN =1 8m VPP,R L = 2.2 kΩ and C = 2.2 µF. Boldface limits apply at the temperature extremes. Symbol Parameter Conditions Min (Note 4) Typ (Note 5) Max (Note 4) Units IDD Supply Current V IN = GND LMV1015-15 180 300 325 µALMV1015-25 141 250 300 SNR Signal to Noise Ratio f = 1 kHz, VIN =1 8m VPP, A-Weighted LMV1015-15 60 dBLMV1015-25 61 VIN Max Input Signal f = 1 kHz and THD+N < 1% LMV1015-15 100 mVPP LMV1015-25 28 VOUT Output Voltage V IN = GND LMV1015-15 1.54 1.48 1.81 1.94 2.00 VLMV1015-25 1.65 1.49 1.90 2.02 2.18 fLOW Lower −3dB Roll Off Frequency R SOURCE =5 0Ω 65 Hz fHIGH Upper −3dB Roll Off Frequency R SOURCE =5 0Ω 95 kHz en Output Noise A-Weighted LMV1015-15 −89 dBVLMV1015-25 −82 THD Total Harmonic Distortion f = 1 kHz, VIN =1 8m VPP LMV1015-15 0.09 %LMV1015-25 0.15 CIN Input Capacitance 2p F ZIN Input Impedance >1000 G Ω AV Gain f = 1 kHz, RSOURCE =5 0Ω LMV1015-15 14.0 13.1 15.6 16.9 17.5 dBLMV1015-25 22.5 21.4 23.8 25.0 25.7 Unless otherwise specified, all limits guaranteed for T J = 25˚C, VDD = 5V, VIN =1 8m VPP,R L = 2.2 kΩ and C = 2.2 µF. Boldface limits apply at the temperature extremes. Symbol Parameter Conditions Min (Note 4) Typ (Note 5) Max (Note 4) Units IDD Supply Current V IN = GND LMV1015-15 200 300 325 µALMV1015-25 160 250 300 LMV1015 Analog Series www.national.com 2

Unless otherwise specified, all limits guaranteed for T J = 25˚C, VDD = 5V, VIN =1 8m VPP,R L = 2.2 kΩ and C = 2.2 µF. Boldface limits apply at the temperature extremes. Symbol Parameter Conditions Min (Note 4) Typ (Note 5) Max (Note 4) Units SNR Signal to Noise Ratio f = 1 kHz, VIN =1 8m VPP, A-Weighted LMV1015-15 60 dBLMV1015-25 61 VIN Max Input Signal f = 1 kHz and THD+N < 1% LMV1015-15 100 mVPP LMV1015-25 28 VOUT Output Voltage V IN = GND LMV1015-15 4.34 4.28 4.56 4.74 4.80 VLMV1015-25 4.45 4.39 4.65 4.83 4.86 fLOW Lower −3dB Roll Off Frequency R SOURCE =5 0Ω 67 Hz fHIGH Upper −3dB Roll Off Frequency R SOURCE =5 0Ω 150 kHz en Output Noise A-Weighted LMV1015-15 −89 dBVLMV1015-25 −82 THD Total Harmonic Distortion f = 1 kHz, VIN =1 8m VPP LMV1015-15 0.13 %LMV1015-25 0.21 CIN Input Capacitance 2p F ZIN Input Impedance >1000 G Ω AV Gain f = 1 kHz, RSOURCE =5 0Ω LMV1015-15 14.0 13.1 15.6 16.9 17.5 dBLMV1015-25 22.5 21.2 23.9 25.1 25.9 Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is intended to be functional, but specific performance is not guaranteed. For guaranteed specifications and the test conditions, see the Electrical Ch aracteristics. Note 2: Human Body Model (HBM) is 1.5 k Ω in series with 100 pF. Note 3: Electrical Table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very limited s elf-heating of the device such that TJ =T A. No guarantee of parametric performance is indicated in the electrical tables under conditions of internal self-heating where T J > TA. Note 4: All limits are guaranteed by design or statistical analysis. Note 5: Typical values represent the most likely parametric norm. Note 6: The maximum power dissipation is a function of T J(MAX), θJA and T A. The maximum allowable power dissipation at any ambient temperature is PD =( TJ(MAX) -T A)/θJA. All numbers apply for packages soldered directly into a PC board. LMV1015 Analog Series www.national.com3

Large Dome 4-Bump micro SMD 20128903 Top View Note: - Pin numbers are referenced to package marking text orientation. - The actual physical placement of the package marking will vary slightly from part to part. The package will designate the date code and will vary considerably. Package marking does not correlate to device type in any way.

Ordering Information

Package Part Number Package Marking Transport Media NSC Drawing 4-Bump Extreme Thin micro SMD (0.3 mm max height) lead free only LMV1015XR-15 Date Code

250 Units Tape and Reel

XRA04ADALMV1015XRX-15 3k Units Tape and Reel LMV1015XR-25 250 Units Tape and Reel LMV1015XRX-25 3k Units Tape and Reel 4-Bump Ultra-Thin micro SMD (0.4 mm max height) lead free only LMV1015UR-15 Date Code URA04ADALMV1015URX-15 3k Units Tape and Reel LMV1015UR-25 250 Units Tape and Reel LMV1015URX-25 3k Units Tape and Reel Note: All packages are supplied with large dome bump technology for 1kg adhesion criteria. LMV1015 Analog Series www.national.com 4

Typical Performance CharacteristicsUnless otherwise specified, V S = 2.2V, R L = 2.2 k Ω, C = 2.2 µF, single supply, T A = 25˚C Supply Current vs. Supply Voltage (LMV1015-15) Supply Current vs. Supply Voltage (LMV1015-25) 20128904 20128919 Gain and Phase vs. Frequency (LMV1015-15) Gain and Phase vs. Frequency (LMV1015-25) 20128905 20128913 Total Harmonic Distortion vs. Frequency (LMV1015-15) Total Harmonic Distortion vs. Frequency (LMV1015-25) 20128906 20128921 LMV1015 Analog Series www.national.com5

Typical Performance CharacteristicsUnless otherwise specified, V S = 2.2V, R L = 2.2 k Ω, C = 2.2 µF, single supply, T A = 25˚C (Continued) Total Harmonic Distortion vs. Input Voltage (LMV1015-15) Total Harmonic Distortion vs. Input Voltage (LMV1015-25) 20128907 20128923 Output Noise vs. Frequency (LMV1015-15) Output Noise vs. Frequency (LMV1015-25) 20128915 20128916 LMV1015 Analog Series www.national.com 6

FIGURE 6. RF Noise Reduction

Physical Dimensions inches (millimeters) unless otherwise noted NOTE: UNLESS OTHERWISE SPECIFIED. 1. FOR SOLDER BUMP COMPOSITION, SEE "SOLDER INFORMATION" IN THE PACKAGING SECTION OF THE NATIONAL SEMICONDUCTOR WEB PAGE (www.national.com). 2. RECOMMEND NON-SOLDER MASK DEFINED LANDING PAD. 3. PIN A1 IS ESTABLISHED BY LOWER LEFT CORNER WITH RESPECT TO TEXT ORIENTATION. 4. XXX IN DRAWING NUMBER REPRESENTS PACKAGE SIZE VARIATION WHERE X1 IS PACKAGE WIDTH, X2 IS PACKAGE LENGTH AND X3 IS PACKAGE HEIGHT. 5. REFERENCE JEDEC REGISTRATION MO-211. VARIATION CA. 4-Bump Extreme Thin micro SMD with Large Dome Bump Technology X1 = 0.975 mm X2 = 1.051 mm X3 = 0.300 mm NOTE: UNLESS OTHERWISE SPECIFIED. 1. FOR SOLDER BUMP COMPOSITION, SEE "SOLDER INFORMATION" IN THE PACKAGING SECTION OF THE NATIONAL SEMICONDUCTOR WEB PAGE (www.national.com). 2. RECOMMEND NON-SOLDER MASK DEFINED LANDING PAD. 3. PIN A1 IS ESTABLISHED BY LOWER LEFT CORNER WITH RESPECT TO TEXT ORIENTATION. 4. XXX IN DRAWING NUMBER REPRESENTS PACKAGE SIZE VARIATION WHERE X1 IS PACKAGE WIDTH, X2 IS PACKAGE LENGTH AND X3 IS PACKAGE HEIGHT. 5. NO JEDEC REGISTRATION AS OF March 2005. 4-Bump ULTRA-Thin micro SMD with Large Dome Bump Technology X1 = 0.975 mm X2 = 1.051 mm X3 = 0.400 mm LMV1015 Analog Series www.national.com 10

National does not assume any responsibility for use of any circuitry described, no circuit patent licenses are implied and National reserves the right at any time without notice to change said circuitry and specifications. For the most current product information visit us at www.national.com. LIFE SUPPORT POLICY NATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT AND GENERAL COUNSEL OF NATIONAL SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. BANNED SUBSTANCE COMPLIANCE National Semiconductor manufactures products and uses packing materials that meet the provisions of the Customer Products Stewardship Specification (CSP-9-111C2) and the Banned Substances and Materials of Interest Specification (CSP-9-111S2) and contain no ‘‘Banned Substances’’ as defined in CSP-9-111S2. Leadfree products are RoHS compliant. National Semiconductor Americas Customer Support Center Email: new.feedback@nsc.com Tel: 1-800-272-9959 National Semiconductor Europe Customer Support Center Fax: +49 (0) 180-530 85 86 Email: europe.support@nsc.com Deutsch Tel: +49 (0) 69 9508 6208 English Tel: +44 (0) 870 24 0 2171 Français Tel: +33 (0) 1 41 91 8790 National Semiconductor Asia Pacific Customer Support Center Email: ap.support@nsc.com National Semiconductor Japan Customer Support Center Fax: 81-3-5639-7507 Email: jpn.feedback@nsc.com Tel: 81-3-5639-7560 www.national.com LMV1015 Analog Series Built-in Gain IC’s for High Sensitivity 2-Wire Microphones