LMN200B01
Document overview
- Manufacturer or author: Diodes Incorporated
- PDF pages: 11
Technical content
Features
Voltage Controlled Small Signal Switch N-MOSFET with Gate Pull-Down Resistor Fig. 1: SOT-26 Surface Mount Package Ideally Suited for Automated Assembly Processes Lead Free By Design/ROHS Compliant (Note 1) "Green" Device (Note 2) C_Q1 C B_Q1 DDTB142JU_DIE S_Q2 Mechanical Data Case: SOT-26 Case Material: Molded Plastic, “Green” Molding PNP E B R1 10K 470 37K G S NMOS Compound. UL Flammability Classification Rating 94V-0 Moisture sensitivity: Level 1 per J-STD-020C Terminal Connections: See Diagram Terminals: Finish - Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Marking & Type Code Information: See Last Page Ordering Information: See Last Page Weight: 0.016 grams (approximate) DSNM6047_DIE D 1 2 3 E_Q1 G_Q2 D_Q2 Fig. 2 Schematic and Pin Configuration Sub-Components Reference Device Type R1 (NOM) R2 (NOM) R3 (NOM) Figure DDTB142JU_DIE Q1 PNP Transistor 10K 470 2 DSNM6047_DIE Q2 N-MOSFET 37K 2 Maximum Ratings, Total Device @ TA = 25C unless otherwise specified Characteristic Symbol Value Unit Power Dissipation (Note 3) Pd 300 mW Power Derating Factor above 125C Pder 2.4 mW/C Output Current Iout 200 mA Thermal Characteristics Characteristic Symbol Value Unit Junction Operation and Storage Temperature Range Tj,Tstg -55 to +150 °C Thermal Resistance, Junction to Ambient Air (Note3) (Equivalent to one heated junction of PNP transistor) RJA 417 °C/W Notes: 1. No purposefully added lead. 3. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. PART OBSOLETE - CONTACT US
Document number: DS30651 Rev. 8 - 4 2 of 11 www.diodes.com October 2021 © Diodes Incorporated OBSOLETE – PART DISCONTINUED Maximum Ratings: Sub-Component Device: Pre-Biased PNP Transistor (Q1) @ TA = 25C unless otherwise specified Characteristic Symbol Value Unit Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage VCEO -50 V Supply Voltage Vcc -50 V Input Voltage Vin +5 to -6 V Output Current IC -200 mA Sub-Component Device: N-MOSFET with Gate Pull-Down Resistor (Q2) @ TA = 25C unless otherwise specified Characteristic Symbol Value Unit Drain-Source Voltage VDSS 60 V Drain Gate Voltage (RGS 1M) VDGR 60 V Gate-Source Voltage Continuous VGSS +/-20 V Pulsed (tp<50 uS) +/-40 Drain Current (Page 1: Note 3) Continuous (Vgs = 10V) ID 115 mA Pulsed (tp <10 uS, Duty Cycle <1%) 800 Continuous Source Current IS 115 mA
Document number: DS30651 Rev. 8 - 4 3 of 11 www.diodes.com October 2021 © Diodes Incorporated OBSOLETE – PART DISCONTINUED Electrical Characteristics: Pre-Biased PNP Transistor (Q1) @ TA = 25C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS Collector-Base Cut Off Current ICBO -100 nA VCB = -50V, IE = 0 Collector-Emitter Cut Off Current ICEO -500 nA VCE = -50V, IB = 0 Emitter-Base Cut Off Current IEBO -0.5 -1 mA VEB = -5V, IC = 0 Emitter-Base Cut Off Current V(BR)CBO -50 V IC = -10A, IE = 0 Collector-Base Breakdown Voltage V(BR)CEO -50 V IC = -2 mA, IB = 0 Collector-Emitter Breakdown Voltage VI(OFF) -0.55 -0.3 V VCE = -5V, IC = -100A Output Voltage VOH -4.9 V VCC = -5V, VB = -0.05V, RL = 1K Output Current (leakage current same as ICEO) IO(OFF) -500 nA VCC = -50V, VI = 0V ON CHARACTERISTICS Collector-Emitter Saturation Voltage VCE(SAT) -0.2 V IC = -50mA, IB = -5mA -0.2 V IC = -20mA, IB = -1mA -0.25 V IC = -100mA, IB= -10mA -0.25 V IC = -200mA, IB= -10mA -0.3 V IC = -200mA, IB = -20mA Equivalent on-resistance* RCE(SAT) 1.5 IC = -200mA, IB = -10mA DC Current Gain hFE 60 245 VCE = -5V, IC = -100 mA 60 250 VCE = -5V, IC = -200 mA Input On Voltage VI(ON) -2.45 -0.7 V VO = -0.3V, IC = -2 mA Output Voltage (equivalent to VCE(SAT) or VO(on)) VOL -0.065 -0.15 V VCC = -5V, VB = -2.5V, Io/II = -50mA /-2.5mA Input Current Ii -9.2 -13 mA VI = -5V Base-Emitter Turn-on Voltage VBE(ON) -1.125 -1.3 V VCE = -5V, IC = -200mA Base-Emitter Saturation Voltage VBE(SAT) -3.2 -3.6 V IC = -50mA, IB = -5mA Input Resistor (Base), +/- 30% R2 0.47 K Pull-up Resistor (Base to Vcc supply), +/- 30% R1 10 K Resistor Ratio (Input Resistor/Pullup resistor), +/ -20% R1/R2 21 SMALL SIGNAL CHARACTERISTICS Transition Frequency (gain bandwidth product) fT 200 MHz VCE = -10V, IE = -5mA, f = 100MHz Collector capacitance, (Ccbo-Output Capacitance) CC 20 pF VCB = -10V, IE = 0A, f = 1MHz * Pulse Test: Pulse width, tp<300 S, Duty Cycle, d<=0.02.
Electrical Characteristics: LMN200B01 Document number: DS30651 Rev. 8 - 4 4 of 11 www.diodes.com October 2021 © Diodes Incorporated OBSOLETE – PART DISCONTINUED N-MOSFET with Gate Pull-Down Resistor (Q2) @ TA = 25C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 4) Drain-Source Breakdown Voltage, BVDSS V(BR)DSS 60 V VGS = 0V, ID = 10A Zero Gate Voltage Drain Current (Drain Leakage Current) IDSS 1 A VGS =0V, VDS = 60V Gate-Body Leakage Current, Forward IGSSF 0.95 mA VGS = 20V, VDS = 0V Gate-Body Leakage Current, Reverse IGSSR -0.95 mA VGS = -20V, VDS = 0V ON CHARACTERISTICS (Note 4) Gate Source Threshold Voltage (Control Supply Voltage) VGS(th) 1 1.86 2.2 V VDS = VGS, ID = 0.25mA Static Drain-Source On-State Voltage VDS(on) 0.08 1.5 V VGS = 5V, ID = 50mA 0.15 3.75 VGS = 10V, ID = 115mA On-State Drain Current ID(on) 500 mA VGS = 10V, VDS 2 VDS(ON) Static Drain-Source On Resistance RDS(on) 1.55 3 VGS = 5V, ID = 50mA 1.4 2 VGS = 10V, ID = 500mA Forward Transconductance gFS 80 240 mS VDS 2 VDS(ON), ID = 115 mA 80 350 VDS 2 VDS(ON), ID = 200 mA Gate Pull-Down Resistor, +/- 30% R3 37 K DYNAMIC CHARACTERISTICS Input Capacitance Ciss 50 pF VDS = -25V, VGS = 0V, = 1MHz Output Capacitance Coss 25 pF Reverse Transfer Capacitance Crss 5 pF SWITCHING CHARACTERISTICS* Turn-On Delay Time td(on) 20 ns VDD = 30V, VGS =10V, ID = 200mA, RG = 25, RL = 150Turn-Off Delay Time td(off) 40 ns SOURCE-DRAIN (BODY) DIODE CHARACTERISTICS AND MAXIMUM RATINGS Drain-Source Diode Forward On-Voltage VSD 0.88 1.5 V VGS = 0V, IS = 115 mA* Maximum Continuous Drain-Source Diode Forward Current (Reverse Drain Current) IS 115 mA Maximum Pulsed Drain-Source Diode Forward * Pulse Test: Pulse width, tp<300 S, Duty Cycle, d<=0.02. Notes: 4. Short duration test pulse used to minimize self-heating effect. Typical Characteristics 350 300 250 200 150 100 0 25 50 75 100 125 150 175 TA, AMBIENT TEMPERATURE (°C) Fig. 3, Max Power Dissipation vs Ambient Temperature PD, POWER DISSIPATION (mW)
Document number: DS30651 Rev. 8 - 4 5 of 11 www.diodes.com October 2021 © Diodes Incorporated OBSOLETE – PART DISCONTINUED IC/IB = 10 A TA = 150°C TA = °C TA = 85°C TA = 25°C 5°C = 12 T VCE(SAT), COLLECTOR VOLTAGE (V) Typical Pre-Biased PNP Transistor (Q1) Characteristics 0.4 0.6 0.5 0.3 0.4 0.2 0.3 0.2 0.1 0.1 0.01 0.1 1 IC, COLLECTOR CURRENT (A) Fig. 4 VCE(SAT) vs. IC 0.01 0.1 1 IC, COLLECTOR CURRENT (A) Fig. 5 VCE(SAT) vs. IC 2.5 1.5 1 10 100 1000 0.5 10 100 1000 IC, COLLECTOR CURRENT (mA) Fig. 6 VBE(SAT) vs. IC 400 300 200 100 IC, COLLECTOR CURRENT (mA) Fig. 7 VBE(ON) vs. IC 1 10 100 1000 IC, COLLECTOR CURRENT (mA) Fig. 8 hFE vs. IC IC/IB = 20 TA = 125°C TA = 150°C TA = -55°C TA = 25°C TA = 85°C IC/IB = 10 VCE = 5V TA = -55°C TA = 25°C TA = 150°C TA = 85°C TA = 125°C IC/IB = 10 TA = 85°C TA = 25°C TA = 150°C TA = 125°C TA = -55°C VCE = 5V TA = 150°C TA = 125°C TA = 85°C TA = 25°C TA = -55°C VBE(SAT), BASE EMITTER VOLTAGE (V) VCE(SAT), COLLECTOR VOLTAGE (V) hFE, DC CURRENT GAIN VBE(ON), BASE EMITTER VOLTAGE (V)
Document number: DS30651 Rev. 8 - 4 6 of 11 www.diodes.com October 2021 © Diodes Incorporated OBSOLETE – PART DISCONTINUED VDS = 10V VDS = VGS ID = 0.25mA Pulsed VGS = 10V Pulsed TA = 125°C TA = 150°C TA = 85°C TA = 25°C TA = -55°C TA = 25°C VGS = 10V VGS = 8V VGS = 6V VGS = 5V VGS = 3V VGS = 4V Typical N-Channel MOSFET (Q2) Characteristics 1.8 1.4 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 1.2 0.8 0.6 0.4 0.2 0 1 2 3 4 5 6 7 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 9 Output Characteristics 0 1 2 3 4 5 VGS, GATE-SOURCE VOLTAGE (V) Fig. 10 Transfer Characteristics 2.2 1.8 1.6 1.4 2 1.2 1 -75 -50 -25 0 25 50 75 100 125 150 0.001 0.01 0.1 1 TJ, JUNCTION TEMPERATURE (°C) Fig. 11 Gate Threshold Voltage vs. Junction Temperature ID, DRAIN CURRENT (A) Fig. 12 Static Drain-Source On-Resistance vs. Drain Current 4 7 3 5 0.001 0.01 0.1 1 0 2 4 6 8 10 12 14 16 18 20 ID, DRAIN CURRENT (A) Fig. 13 Static Drain-Source On-Resistance vs. Drain Current VGS, GATE SOURCE VOLTAGE (V) Fig. 14 Static Drain-Source On-Resistance vs. Gate-Source Voltage VDS = 10V TA = -55°C TA = 25°C TA = 125°C TA = 150°C TA = 85°C VGS = 5V Pulsed TA = 125°C T = 150°C A TA = 85°C TA = 25°C TA = -55°C TA = 25°C Pulsed ID = 115mA ID = 50mA VGS(th), GATE THRESHOLD VOLTAGE (V) ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A)
Document number: DS30651 Rev. 8 - 4 7 of 11 www.diodes.com October 2021 © Diodes Incorporated OBSOLETE – PART DISCONTINUED 25VC 2.5 1.5 0.1 0.01 0.5 -75 -50 -25 0 25 50 75 100 125 150 0.001 0.5 1 1.5 0.1 0.01 Tj, JUNCTION TEMPERATURE (°C) Fig. 15 Static Drain-Source On-State Resistance vs. Junction Temperature 900 800 700 600 500 400 300 200 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 16 Reverse Drain Current vs. Source-Drain Voltage 0.001 0.5 1 1.5 2 2.5 100 0 0.2 0.4 0.6 0.8 VSD, BODY DIODE FORWARD VOLTAGE (V) Fig. 17 Reverse Drain Current vs. Body Diode Forward Voltage ID, DRAIN CURRENT (A) Fig. 18 Forward Transconductance vs. Drain Current (VDS > ID RDS(ON) ) VGS = 10V Pulsed ID = 115mA ID = 50mA TA = 125°C TA = 25°C TA = -55°C TA = 150°C TA = 85°C VGS = 5V Pulsed VGS = 10V T = 25°C VGS = 5V A = Pulsed • TA = -55°C TA = 25°C TA = 85°C TA = 150°C TA = 125°C IS, REVERSE DRAIN CURRENT (A) IS, REVERSE DRAIN CURRENT (A) gFS, FORWARD TRANSCONDUCTANCE (mS)
Document number: DS30651 Rev. 8 - 4 8 of 11 www.diodes.com October 2021 © Diodes Incorporated OBSOLETE – PART DISCONTINUED E C Q1 PNP 10K B R2 470 DSNM6047 D S Q2 NMOS Control G R3 37K Load Switch Vin 1 Control 2
6 Vout
4 Gnd
Diodes Inc. Voltage Regulator E_Q1 C_Q1 G_Q2 B_Q1 D_Q2 S_Q2 OUT IN GND OUT1 Control Logic Circuit (PIC, Comparator etc) Vin Application Details PNP Transistor (DDTB142JU) and N-MOSFET (DSNM6047) with gate pull-down resistor integrated as one in LMN200B01 can be used as a discrete entity for general purpose applications or as an integrated circuit to function as a Load Switch. When it is used as the latter as shown in Fig 19, various input voltage sources can be used as long as it does not exceed the maximum ratings of the device. These devices are designed to deliver continuous output load current up to a maximum of 200 mA. The MOSFET Switch draws no current, hence loading of control circuit is prevented. Care must be taken for higher levels of dissipation while designing for higher load conditions. These devices provide high power and also consume less space. The product mainly helps in optimizing power usage, thereby conserving battery life in a controlled load system like portable battery powered applications. (Please see Fig. 20 for one example of a typical application circuit used in conjunction with voltage regulator as a part of a power management system) Vin DDTB142JU Fig. 19 Circuit Diagram Vout LOAD Typical Application Circuit 5v Supply Fig. 20
Document number: DS30651 Rev. 8 - 4 9 of 11 www.diodes.com October 2021 © Diodes Incorporated OBSOLETE – PART DISCONTINUED
Ordering Information
Device Marking Code Packaging Shipping LMN200B01-7 PM1 SOT-26 3000/Tape & Reel Marking Information PM1 = Product Type Marking Code, YM = Date Code Marking Y = Year ex: T = 2006 M = Month ex: 9 = September Fig. 21 Date Code Key Year 2006 2007 2008 2009 Code T U V W Month Jan Feb March Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D
Document number: DS30651 Rev. 8 - 4 10 of 11 www.diodes.com October 2021 © Diodes Incorporated OBSOLETE – PART DISCONTINUED Mechanical Details Fig. 22 Suggested Pad Layout: (Based on IPC-SM-782) E E C Fig. 23 H K J D F M L A B C Z G Y X SOT-26 Dim Min Max Typ A 0.35 0.5 0.38 B 1.5 1.7 1.6 C 2.7 3 2.8 D - - 0.95 F - - 0.55 H 2.9 3.1 3 J 0.013 0.1 0.05 K 1 1.3 1.1 L 0.35 0.55 0.4 M 0.1 0.2 0.15 0 8° - All Dimensions in mm Figure 23 Dimensions SOT-26* Z 3.2 G 1.6 X 0.55 Y 0.8 C 2.4 E 0.95
Document number: DS30651 Rev. 8 - 4 11 of 11 www.diodes.com October 2021 © Diodes Incorporated OBSOLETE – PART DISCONTINUED IMPORTANT NOTICE 1. DIODES INCORPORATED AND ITS SUBSIDIARIES (“DIODES”) MAKE NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO ANY INFORMATION CONTAINED IN THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTIC ULAR PURPOSE OR NON -INFRINGEMENT OF THIRD PARTY INTELLECTUAL PROPERTY RIGHTS (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 2. The Information contained herein is for informational purpose only and is provided only to illustrate the operati on of Diodes products described herein and application examples. Diodes does not assume any liability arising out of the application or use of this document or any product described herein. This document is intended for skilled and technically trained engi neering customers and users who design with Diodes products. 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