LMC6032IM/NOPB

LMC6032 TI1 | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 25

Technical content

www.ti.com SNOS609C –NOVEMBER 1994–REVISED MARCH 2013 LMC6032CMOS DualOperationalAmplifier Check forSamples: LMC6032 1FEATURES • Long-Term Integrator

• Sample-and-Hold Circuit 2• Specifiedfor2 kΩ and 600 Ω Loads
• MedicalInstrumentation• High VoltageGain:12 dB
• Low OffsetVoltageDrift:2.3μV/°C DESCRIPTION• UltraLow InputBias Current: 40 fA The LMC6032 isa CMOS dualoperationalamplifier• InputCommon-mode Range IncludesV− whichcan operatefromeithera singlesupplyordual
• OperatingRange From +5V to+15V Supply supplies.Itsperformancefeaturesincludean input common-mode range thatreachesground,low input• ISS = 400 μA/Amplifier;IndependentofV+ biascurrent,and highvoltagegainintorealisticloads,• Low Distortion:0.01% at10 kHz such as 2 kΩ and 600 Ω.
• Slew Rate:1.1V/μs This chip is builtwith TI's advanced Double-Poly• Improved Performance Over TLC272 Silicon-GateCMOS process. See the LMC6034 datasheetfor a CMOS quadAPPLICATIONS operationalamplifierwiththese same features.For
• High-Impedance Bufferor Preamplifier higher performance characteristicsrefer to the LMC662.• Current-to-VoltageConverter CONNECTION DIAGRAMS 8-PinPDIP/SOIC Top View Figure1. 10 Hz High-Pass Filter Pleasebe aware thatan importantnoticeconcerningavailability,standardwarranty,and use incriticalapplicationsof Texas Instrumentssemiconductorproductsand disclaimerstheretoappearsattheend ofthisdatasheet. 2Alltrademarksarethepropertyoftheirrespectiveowners. PRODUCTION DATA informationiscurrentas ofpublicationdate. Copyright© 1994–2013,Texas InstrumentsIncorporatedProductsconform to specificationsper the terms of the Texas Instrumentsstandardwarranty.Productionprocessingdoes not necessarilyincludetestingofallparameters.

SNOS609C –NOVEMBER 1994–REVISED MARCH 2013 www.ti.com These deviceshave limitedbuilt-inESD protection.The leadsshouldbe shortedtogetherorthedeviceplacedinconductivefoam duringstorageorhandlingtopreventelectrostaticdamage totheMOS gates. AbsoluteMaximum Ratings(1) DifferentialInputVoltage ±SupplyVoltage SupplyVoltage(V+ − V−) 16V OutputShortCircuittoV+ See (2) OutputShortCircuittoV− See (3) Lead Temperature(Soldering,10 sec.) 260°C StorageTemperatureRange −65°C to+150°C JunctionTemperature 150°C ESD Tolerance(4) 1000V Power Dissipation See (5) (V+)+ 0.3V VoltageatOutput/InputPin (V−)− 0.3V CurrentatOutputPin ±18 mA CurrentatInputPin ±5 mA CurrentatPower SupplyPin 35 mA (1) AbsoluteMaximum Ratingsindicatelimitsbeyond whichdamage tocomponent may occur.OperatingRatingsindicateconditionsfor whichthedeviceisintendedtobe functional,butdo notensurespecificperformancelimits.Forensuredspecificationsand test conditions,see theElectricalCharacteristics.The ensuredspecificationsapplyonlyforthetestconditionslisted. (2) Do notconnectoutputtoV+,when V+ isgreaterthan13V orreliabilitymay be adverselyaffected. (3) Appliestobothsingle-supplyand split-supplyoperation.Continuousshortcircuitoperationatelevatedambienttemperatureand/or multipleOp Amp shortscan resultinexceedingthemaximum allowedjunctiontemperatureof150°C. Outputcurrentsinexcessof±30 mA overlongtermmay adverselyaffectreliability. (4) Human body model,100 pF dischargedthrougha 1.5kΩ resistor. (5) The maximum power dissipationisa functionofTJ(max),θJA,and TA.The maximum allowablepower dissipationatany ambient temperatureisPD = (TJ(max)– TA)/θJA. OperatingRatings(1) TemperatureRange −40°C ≤ TJ ≤ +85°C SupplyVoltageRange 4.75Vto15.5V Power Dissipation (2) 8-PinPDIP 101°C/W ThermalResistance(θJA)(3) 8-PinSOIC 165°C/W (1) AbsoluteMaximum Ratingsindicatelimitsbeyond whichdamage tocomponent may occur.OperatingRatingsindicateconditionsfor whichthedeviceisintendedtobe functional,butdo notensurespecificperformancelimits.Forensuredspecificationsand test conditions,see theElectricalCharacteristics.The ensuredspecificationsapplyonlyforthetestconditionslisted. (2) Foroperatingatelevatedtemperaturesthedevicemust be deratedbased on thethermalresistanceθJA withPD = (TJ − TA)/θJA. (3) Allnumbers applyforpackagessoldereddirectlyintoa PC board.

2 SubmitDocumentationFeedback Copyright© 1994–2013,Texas InstrumentsIncorporated

ProductFolderLinks:LMC6032

www.ti.com SNOS609C –NOVEMBER 1994–REVISED MARCH 2013 DC ElectricalCharacteristics Unlessotherwisespecified,alllimitsensuredforTJ = 25°C. Boldfacelimitsapplyatthetemperatureextremes.V+ = 5V,V− = GND = 0V,VCM = 1.5V,VOUT = 2.5Vand R L > 1M unlessotherwisespecified. Symbol Parameter Conditions Typical LMC6032I Units (1) Limit (2) VOS InputOffsetVoltage 1 9 mV 11 max ΔVOS /ΔT InputOffsetVoltage 2.3 μV/°CAverageDrift IB InputBiasCurrent 0.04 pA 200 max IOS InputOffsetCurrent 0.01 pA 100 max R IN InputResistance >1 TeraΩ CMRR Common Mode Rejection 0V ≤ VCM ≤ 12V 83 63 dB Ratio V+ = 15V 60 min +PSRR PositivePower Supply 5V ≤ V+ ≤ 15V 83 63 dB RejectionRatio VO = 2.5V 60 min −PSRR NegativePower Supply 0V ≤ V− ≤ −10V 94 74 dB RejectionRatio 70 min VCM InputCommon-Mode V+ = 5V & 15V −0.4 −0.1 V VoltageRange ForCMRR ≥ 50 dB 0 max V+ − 2.6 min AV LargeSignalVoltageGain R L = 2 kΩ(3) Sourcing 2000 200 V/mV 100 min Sinking 500 90 V/mV 40 min R L = 600Ω(3) Sourcing 1000 100 V/mV 75 min Sinking 250 50 V/mV 20 min (1) Typicalvaluesrepresentthemost likelyparametricnormal. (2) Alllimitsarespecifiedatroom temperature(standardtypeface)oratoperatingtemperatureextremes(boldtypeface). Copyright© 1994–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 3 ProductFolderLinks:LMC6032

SNOS609C –NOVEMBER 1994–REVISED MARCH 2013 www.ti.com DC ElectricalCharacteristics(continued) Unlessotherwisespecified,alllimitsensuredforTJ = 25°C. Boldfacelimitsapplyatthetemperatureextremes.V+ = 5V,V− = GND = 0V,VCM = 1.5V,VOUT = 2.5Vand R L > 1M unlessotherwisespecified. Symbol Parameter Conditions Typical LMC6032I Units (1) Limit (2) VO OutputVoltageSwing V+ = 5V 4.87 4.20 V R L = 2 kΩ to2.5V 4.00 min 0.10 0.25 V 0.35 max V+ = 5V 4.61 4.00 V R L = 600Ω to2.5V 3.80 min 0.30 0.63 V 0.75 max V+ = 15V 14.63 13.50 V R L = 2 kΩ to7.5V 13.00 min 0.26 0.45 V 0.55 max V+ = 15V 13.90 12.50 V R L = 600Ω to7.5V 12.00 min 0.79 1.45 V 1.75 max IO OutputCurrent V+ = 5V 22 13 mA Sourcing,VO = 0V 9 minSinking,VO = 5V 21 13 mA 9 min V+ = 15V 40 23 mA Sourcing,VO = 0V 15 minSinking,VO = 13V (4) 39 23 mA 15 min IS SupplyCurrent BothAmplifiers 0.75 1.6 mA VO = 1.5V 1.9 max (4) Do notconnectoutputtoV+,when V+ isgreaterthan13V orreliabilitymay be adverselyaffected.

4 SubmitDocumentationFeedback Copyright© 1994–2013,Texas InstrumentsIncorporated

ProductFolderLinks:LMC6032

www.ti.com SNOS609C –NOVEMBER 1994–REVISED MARCH 2013 AC ElectricalCharacteristics Unlessotherwisespecified,alllimitsensuredforTJ = 25°C. Boldfacelimitsapplyatthetemperatureextremes.V+ = 5V,V− = GND = 0V,VCM = 1.5V,VOUT = 2.5Vand R L > 1M unlessotherwisespecified. Symbol Parameter Conditions Typical LMC6032I Units (1) Limit (2) SR Slew Rate See (3) 1.1 0.8 V/μs 0.4 min GBW Gain-BandwidthProduct 1.4 MHz φM Phase Margin 50 Deg G M Gain Margin 17 dB Amp-to-Amp Isolation See (4) 130 dB en Input-ReferredVoltageNoise F = 1 kHz 22 nV/√Hz in Input-ReferredCurrentNoise F = 1 kHz 0.0002 pA/√Hz F = 10 kHz,AV = −10 THD TotalHarmonicDistortion R L = 2 kΩ,VO = 8 VPP 0.01 % ±5V Supply (1) Typicalvaluesrepresentthemost likelyparametricnormal. (2) Alllimitsarespecifiedatroom temperature(standardtypeface)oratoperatingtemperatureextremes(boldtypeface). (3) V+ = 15V.Connectedas VoltageFollowerwith10V stepinput.Number specifiedistheslowerofthepositiveand negativeslewrates. (4) Inputreferred.V+ = 15V and R L = 10 kΩ connectedtoV+/2.Each amp excitedinturnwith1 kHz toproduceVO = 13 VPP . Copyright© 1994–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 5 ProductFolderLinks:LMC6032

SNOS609C –NOVEMBER 1994–REVISED MARCH 2013 www.ti.com TYPICAL PERFORMANCE CHARACTERISTICS VS = ±7.5V,TA = 25°C unlessotherwisespecified Supply Current vs Supply Voltage InputBias Current Figure2. Figure3. Output Characteristics Output Characteristics CurrentSinking CurrentSourcing Figure4. Figure5. CMRR InputVoltageNoise vs vs Frequency Frequency Figure6. Figure7.

6 SubmitDocumentationFeedback Copyright© 1994–2013,Texas InstrumentsIncorporated

ProductFolderLinks:LMC6032

www.ti.com SNOS609C –NOVEMBER 1994–REVISED MARCH 2013 TYPICAL PERFORMANCE CHARACTERISTICS (continued) VS = ±7.5V,TA = 25°C unlessotherwisespecified Open-Loop Frequency Frequency Response Response vs CapacitiveLoad Figure8. Figure9. Non-InvertingLarge Signal Stabilityvs Pulse Response CapacitiveLoad Figure10. Figure11. Stabilityvs Stabilityvs CapacitiveLoad CapacitiveLoad Figure12. Figure13. Copyright© 1994–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 7 ProductFolderLinks:LMC6032

SNOS609C –NOVEMBER 1994–REVISED MARCH 2013 www.ti.com TYPICAL PERFORMANCE CHARACTERISTICS (continued) VS = ±7.5V,TA = 25°C unlessotherwisespecified Stabilityvs CapacitiveLoad Avoidresistiveloadsoflessthan500Ω,as theymay cause instability. Figure14.

8 SubmitDocumentationFeedback Copyright© 1994–2013,Texas InstrumentsIncorporated

ProductFolderLinks:LMC6032

www.ti.com SNOS609C –NOVEMBER 1994–REVISED MARCH 2013 APPLICATION HINTS AMPLIFIER TOPOLOGY The topologychosen fortheLMC6032, shown inFigure15,isunconventional(comparedtogeneral-purposeop amps) inthatthetraditionalunity-gainbufferoutputstageisnotused;instead,theoutputistakendirectlyfrom theoutputoftheintegrator,toallowa largeroutputswing.Sincethebuffertraditionallydeliversthepower tothe load,whilemaintaininghighop amp gainand stability,and must withstandshortstoeitherrail,thesetasksnow falltotheintegrator. As a resultofthesedemands, theintegratorisa compound affairwithan embedded gainstagethatisdoublyfed forward(viaC f and C ff) by a dedicatedunity-gaincompensationdriver.In addition,the outputportionof the integratorisa push-pullconfigurationfordeliveringheavy loads.Whilesinkingcurrentthewhole amplifierpath consistsof threegainstageswithone stagefed forward,whereas whilesourcingthe path containsfourgain stageswithtwo fedforward. Figure15. LMC6032 CircuitTopology (Each Amplifier) The largesignalvoltagegainwhilesourcingiscomparabletotraditionalbipolarop amps, even witha 600Ω load. The gainwhilesinkingishigherthanmost CMOS op amps, due totheadditionalgainstage;however,under heavy load(600Ω)thegainwillbe reducedas indicatedintheElectricalCharacteristics. COMPENSATING INPUT CAPACITANCE The highinputresistanceoftheLMC6032 op amps allowstheuse oflargefeedbackand sourceresistorvalues withoutlosinggainaccuracydue toloading.However, thecircuitwillbe especiallysensitivetoitslayoutwhen theselarge-valueresistorsareused. Every amplifierhas some capacitancebetween each inputand AC ground, and also some differential capacitancebetween the inputs.When the feedback network around an amplifieris resistive,thisinput capacitance(alongwithany additionalcapacitancedue tocircuitboardtraces,thesocket,etc.)and thefeedback resistorscreatea poleinthefeedbackpath.InthefollowingGeneralOperationalAmplifierCircuit,Figure16,the frequencyofthispoleis where C S isthe totalcapacitanceat the invertinginput,includingamplifierinputcapacitanceand any stray capacitancefromtheIC socket(ifone isused),circuitboardtraces,etc.,and R PistheparallelcombinationofR F and R IN. This formula,as wellas allformulaederivedbelow,apply to invertingand non-invertingop-amp configurations. When thefeedbackresistorsare smallerthana few kΩ,thefrequencyofthefeedbackpolewillbe quitehigh, sinceC Sisgenerallylessthan10 pF.Ifthefrequencyofthefeedbackpoleismuch higherthanthe“ideal”closed- loopbandwidth(thenominalclosed-loopbandwidthintheabsence ofC S),thepolewillhave a negligibleeffect on stability,as itwilladd onlya smallamount ofphase shift. However,ifthefeedbackpoleislessthanapproximately6 to10 timesthe“ideal” −3 dB frequency,a feedback capacitor,C F,shouldbe connectedbetween theoutputand theinvertinginputoftheop amp. Thisconditioncan alsobe statedintermsoftheamplifier'slow-frequencynoisegain:To maintainstability,a feedbackcapacitorwill probablybe needed if Copyright© 1994–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 9 ProductFolderLinks:LMC6032

SNOS609C –NOVEMBER 1994–REVISED MARCH 2013 www.ti.com where istheamplifier'slow-frequencynoisegainand GBW istheamplifier'sgainbandwidthproduct.An amplifier'slow- frequencynoisegainisrepresentedby theformula regardlessof whetherthe amplifierisbeingused inan invertingor non-invertingmode. Note thata feedback capacitorismore likelytobe needed when thenoisegainislowand/orthefeedbackresistorislarge. Ifthe above conditionismet (indicatinga feedbackcapacitorwillprobablybe needed),and the noisegainis largeenough that: thefollowingvalueoffeedbackcapacitorisrecommended: If thefeedbackcapacitorshouldbe: Note thatthese capacitorvalues are usuallysignificantlysmallerthan those given by the older,more conservativeformula: C S consistsoftheamplifier's inputcapacitanceplusany straycapacitancefromthecircuitboardand socket.C F compensatesforthepolecaused by C S and thefeedbackresistor. Figure16. GeneralOperationalAmplifierCircuit Usingthesmallercapacitorswillgivemuch higherbandwidthwithlittledegradationoftransientresponse.Itmay be necessaryinany oftheabove cases touse a somewhat largerfeedbackcapacitortoallowforunexpected straycapacitance,ortotolerateadditionalphase shiftsintheloop,orexcessivecapacitiveload,ortodecrease the noise or bandwidth,or simply because the particularcircuitimplementationneeds more feedback capacitancetobe sufficientlystable.For example,a printedcircuitboard'sstraycapacitancemay be largeror smallerthanthebreadboard's,so theactualoptimum valueforC F may be differentfromtheone estimatedusing the breadboard.In most cases,the value of C F should be checked on the actualcircuit,startingwiththe computed value.

10 SubmitDocumentationFeedback Copyright© 1994–2013,Texas InstrumentsIncorporated

ProductFolderLinks:LMC6032

www.ti.com SNOS609C –NOVEMBER 1994–REVISED MARCH 2013 CAPACITIVE LOAD TOLERANCE Likemany otherop amps, theLMC6032 may oscillatewhen itsappliedloadappearscapacitive.The thresholdof oscillationvariesboth withloadand circuitgain.The configurationmost sensitiveto oscillationisa unity-gain follower.See theTypicalPerformanceCharacteristics. The load capacitanceinteractswiththe op amp's outputresistanceto createan additionalpole.Ifthispole frequencyissufficientlylow,itwilldegradetheop amp's phase marginso thattheamplifierisno longerstableat low gains.As shown inFigure17, the additionof a smallresistor(50Ω to 100Ω) inserieswiththe op amp's output,and a capacitor(5 pF to10 pF) from invertinginputtooutputpins,returnsthephase margintoa safe value withoutinterferingwithlower-frequencycircuitoperation.Thus, largervaluesof capacitancecan be toleratedwithoutoscillation.Note thatinallcases,theoutputwillringheavilywhen theloadcapacitanceisnear thethresholdforoscillation. Figure17. Rx, Cx Improve CapacitiveLoad Tolerance Capacitiveloaddrivingcapabilityisenhanced by usinga pullup resistortoV+ (Figure18).Typicallya pullup resistorconducting500 μA ormore willsignificantlyimprovecapacitiveloadresponses.The valueofthepullup resistormust be determinedbased on thecurrentsinkingcapabilityoftheamplifierwithrespecttothedesired outputswing.Open loopgainof the amplifiercan alsobe affectedby the pullup resistor(see DC Electrical Characteristics). Figure18. Compensating forLarge Capacitive Loads witha PullUp Resistor PRINTED-CIRCUIT-BOARD LAYOUT FOR HIGH-IMPEDANCE WORK Itisgenerallyrecognizedthatany circuitwhichmust operatewithlessthan1000 pA ofleakagecurrentrequires speciallayoutof the PC board.When one wishes to take advantage of the ultra-lowbias currentof the LMC6032, typicallylessthan0.04pA, itisessentialtohave an excellentlayout.Fortunately,thetechniquesfor obtaininglow leakagesare quitesimple.First,theusermust notignorethesurfaceleakageofthePC board, even though itmay sometimes appear acceptablylow,because under conditionsof highhumidityor dustor contamination,thesurfaceleakagewillbe appreciable. To minimizetheeffectofany surfaceleakage,layouta ringoffoilcompletelysurroundingtheLMC6032's inputs and the terminalsof capacitors,diodes,conductors,resistors,relayterminals,etc.connectedto the op-amp's inputs.See Figure19.To have a significanteffect,guardringsshouldbe placedon boththetopand bottomof thePC board.ThisPC foilmust thenbe connectedtoa voltagewhich isatthesame voltageas theamplifier inputs,sinceno leakagecurrentcan flowbetween two pointsatthesame potential.For example,a PC board trace-to-padresistanceof 1012Ω, which isnormallyconsidereda verylargeresistance,couldleak5 pA ifthe tracewere a 5V bus adjacentto the pad of an input.This would cause a 100 timesdegradationfrom the LMC6032's actualperformance.However, ifa guard ringis held within5 mV of the inputs,then even a resistanceof1011Ω would cause only0.05pA ofleakagecurrent,or perhapsa minor(2:1)degradationofthe amplifier'sperformance.See Figure20,Figure21,Figure22 fortypicalconnectionsofguardringsforstandard op-amp configurations.Ifbothinputsareactiveand athighimpedance,theguardcan be tiedtogroundand still providesome protection;see Figure23. Copyright© 1994–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 11 ProductFolderLinks:LMC6032

SNOS609C –NOVEMBER 1994–REVISED MARCH 2013 www.ti.com Figure19. Example ofGuard Ring in P.C.Board Layout Figure20. InvertingAmplifierGuard Ring Connections Figure21. Non-InvertingAmplifierGuard Ring Connections Figure22. FollowerGuard Ring Connections

12 SubmitDocumentationFeedback Copyright© 1994–2013,Texas InstrumentsIncorporated

ProductFolderLinks:LMC6032

www.ti.com SNOS609C –NOVEMBER 1994–REVISED MARCH 2013 Figure23. Howland CurrentPump Guard Ring Connections The designershouldbe aware thatwhen itisinappropriateto layout a PC board forthe sake of justa few circuits,thereisanothertechniquewhich iseven betterthan a guard ringon a PC board:Don'tinsertthe amplifier'sinputpinintothe board at all,but bend itup inthe airand use onlyairas an insulator.Airisan excellentinsulator.Inthiscase you may have toforegosome oftheadvantagesofPC board construction,but theadvantagesaresometimeswellworththeeffortofusingpoint-to-pointup-in-the-airwiring.See Figure24. InputpinsareliftedoutofPC boardand soldereddirectlytocomponents.AllotherpinsconnectedtoPC board. Figure24. AirWiring Copyright© 1994–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 13 ProductFolderLinks:LMC6032

SNOS609C –NOVEMBER 1994–REVISED MARCH 2013 www.ti.com BIAS CURRENT TESTING The testmethod of Figure25 is appropriateforbench-testingbias currentwith reasonableaccuracy.To understanditsoperation,firstcloseswitchS2 momentarily.When S2 isopened,then Figure25. Simple InputBias CurrentTestCircuit A suitablecapacitorforC2 would be a 5 pF or 10 pF silvermica, NPO ceramic,or air-dielectric.When determiningthemagnitudeofIb−,theleakageofthecapacitorand socketmust be takenintoaccount.SwitchS2 shouldbe leftshortedmost ofthetime,orelsethedielectricabsorptionofthecapacitorC2 couldcause errors. Similarly,ifS1 isshortedmomentarily(whileleavingS2 shorted) where C x isthestraycapacitanceatthe+ input.

14 SubmitDocumentationFeedback Copyright© 1994–2013,Texas InstrumentsIncorporated

ProductFolderLinks:LMC6032

www.ti.com SNOS609C –NOVEMBER 1994–REVISED MARCH 2013 TYPICAL SINGLE-SUPPLY APPLICATIONS (V+ = 5.0VDC ) Additionalsingle-supplyapplicationsideascan be found inthe LM358 datasheet.The LMC6032 ispin-for-pin compatiblewiththeLM358 and offersgreaterbandwidthand inputresistanceovertheLM358. These features willimprovetheperformanceofmany existingsingle-supplyapplications.Note,however,thatthesupplyvoltage rangeoftheLMC6032 issmallerthanthatoftheLM358. Figure26. InstrumentationAmplifier ifR1 = R5; R3 = R6, and R4 = R7. = 100 forcircuitshown. For good CMRR overtemperature,low driftresistorsshouldbe used.MatchingofR3 toR6 and R4 toR7 affects CMRR. Gain may be adjustedthroughR2. CMRR may be adjustedthroughR7. Oscillatorfrequencyisdeterminedby R1, R2, C1, and C2: fOSC = 1/2πRC where R = R1 = R2 and C = C1 = C2. Figure27. Sine-Wave Oscillator Thiscircuit,as shown,oscillatesat2.0kHz witha peak-to-peakoutputswingof4.0V. Copyright© 1994–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 15 ProductFolderLinks:LMC6032

SNOS609C –NOVEMBER 1994–REVISED MARCH 2013 www.ti.com TYPICAL SINGLE-SUPPLY APPLICATIONS (continued) (V+ = 5.0VDC ) Figure28. Low-Leakage Sample-and-Hold Figure29. 1 Hz Square-Wave Oscillator Figure30. Power Amplifier fO = 10 Hz Q = 2.1 Gain = −8.8 Figure31. 10 Hz Bandpass Filter

16 SubmitDocumentationFeedback Copyright© 1994–2013,Texas InstrumentsIncorporated

ProductFolderLinks:LMC6032

www.ti.com SNOS609C –NOVEMBER 1994–REVISED MARCH 2013 TYPICAL SINGLE-SUPPLY APPLICATIONS (continued) (V+ = 5.0VDC ) Figure32. 1 Hz Low-Pass Filter (MaximallyFlat,Dual Supply Only) fc = 10 Hz d = 0.895 Gain = 1 2 dB passband ripple Figure33. 10 Hz High-Pass Filter Gain = −46.8 Outputoffsetvoltagereducedtotheleveloftheinputoffsetvoltageofthebottomamplifier(typically1 mV). Figure34. High Gain AmplifierwithOffsetVoltageReduction Copyright© 1994–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 17 ProductFolderLinks:LMC6032

SNOS609C –NOVEMBER 1994–REVISED MARCH 2013 www.ti.com

REVISION HISTORY

Changes from RevisionB (March 2013)toRevisionC Page

18 SubmitDocumentationFeedback Copyright© 1994–2013,Texas InstrumentsIncorporated

ProductFolderLinks:LMC6032

www.ti.com 19-Mar-2015 Addendum-Page 1 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Drawing Pins Package Qty Eco Plan (2) Lead/Ball Finish (6) MSL Peak Temp (3) Op Temp (°C) Device Marking (4/5) Samples LMC6032IM NRND SOIC D 8 95 TBD Call TI Call TI -40 to 85 LMC60 32IM LMC6032IM/NOPB ACTIVE SOIC D 8 95 Green (RoHS & no Sb/Br) CU SN Level-1-260C-UNLIM -40 to 85 LMC60 32IM LMC6032IMX NRND SOIC D 8 2500 TBD Call TI Call TI -40 to 85 LMC60 32IM LMC6032IMX/NOPB ACTIVE SOIC D 8 2500 Green (RoHS & no Sb/Br) CU SN Level-1-260C-UNLIM -40 to 85 LMC60 32IM LMC6032IN/NOPB ACTIVE PDIP P 8 40 Green (RoHS & no Sb/Br) CU SN Level-1-NA-UNLIM -40 to 85 LMC 6032IN (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability information and additional product content details. TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above. Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material) (3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. (4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device. (5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation of the previous line and the two combined represent the entire Device Marking for that device.

www.ti.com 19-Mar-2015 Addendum-Page 2 (6) Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish value exceeds the maximum column width. Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release. In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.

*All dimensions are nominal Device Package Type Package Drawing Pins SPQ Reel Diameter (mm) Reel Width W1 (mm) (mm) (mm) (mm) (mm) W (mm) Pin1 Quadrant PACKAGE MATERIALS INFORMATION www.ti.com 26-Mar-2013 Pack Materials-Page 1

*All dimensions are nominal Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) LMC6032IMX SOIC D 8 2500 367.0 367.0 35.0 LMC6032IMX/NOPB SOIC D 8 2500 367.0 367.0 35.0 PACKAGE MATERIALS INFORMATION www.ti.com 26-Mar-2013 Pack Materials-Page 2

Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, enhancements, improvements and other changes to its semiconductor products and services per JESD46, latest issue, and to discontinue any product or service per JESD48, latest issue. Buyers should obtain the latest relevant information before placing orders and should verify that such information is current and complete. All semiconductor products (also referred to herein as “components”) are sold subject to TI’s terms and conditions of sale supplied at the time of order acknowledgment. TI warrants performance of its components to the specifications applicable at the time of sale, in accordance with the warranty in TI’s terms and conditions of sale of semiconductor products. Testing and other quality control techniques are used to the extent TI deems necessary to support this warranty. Except where mandated by applicable law, testing of all parameters of each component is not necessarily performed. TI assumes no liability for applications assistance or the design of Buyers’products. Buyers are responsible for their products and applications using TI components. To minimize the risks associated with Buyers’products and applications, Buyers should provide adequate design and operating safeguards. TI does not warrant or represent that any license, either express or implied, is granted under any patent right, copyright, mask work right, or other intellectual property right relating to any combination, machine, or process in which TI components or services are used. Information published by TI regarding third-party products or services does not constitute a license to use such products or services or a warranty or endorsement thereof. Use of such information may require a license from a third party under the patents or other intellectual property of the third party, or a license from TI under the patents or other intellectual property of TI. Reproduction of significant portions of TI information in TI data books or data sheets is permissible only if reproduction is without alteration and is accompanied by all associated warranties, conditions, limitations, and notices. TI is not responsible or liable for such altered documentation. Information of third parties may be subject to additional restrictions. Resale of TI components or services with statements different from or beyond the parameters stated by TI for that component or service voids all express and any implied warranties for the associated TI component or service and is an unfair and deceptive business practice. TI is not responsible or liable for any such statements. Buyer acknowledges and agrees that it is solely responsible for compliance with all legal, regulatory and safety-related requirements concerning its products, and any use of TI components in its applications, notwithstanding any applications-related information or support that may be provided by TI. Buyer represents and agrees that it has all the necessary expertise to create and implement safeguards which anticipate dangerous consequences of failures, monitor failures and their consequences, lessen the likelihood of failures that might cause harm and take appropriate remedial actions. Buyer will fully indemnify TI and its representatives against any damages arising out of the use of any TI components in safety-critical applications. In some cases, TI components may be promoted specifically to facilitate safety-related applications. With such components, TI’s goal is to help enable customers to design and create their own end-product solutions that meet applicable functional safety standards and requirements. Nonetheless, such components are subject to these terms. No TI components are authorized for use in FDA Class III (or similar life-critical medical equipment) unless authorized officers of the parties have executed a special agreement specifically governing such use. Only those TI components which TI has specifically designated as military grade or “enhanced plastic”are designed and intended for use in military/aerospace applications or environments. Buyer acknowledges and agrees that any military or aerospace use of TI components which have not been so designated is solely at the Buyer's risk, and that Buyer is solely responsible for compliance with all legal and regulatory requirements in connection with such use. TI has specifically designated certain components as meeting ISO/TS16949 requirements, mainly for automotive use. In any case of use of non-designated products, TI will not be responsible for any failure to meet ISO/TS16949. Products Applications Audio www.ti.com/audio Automotive and Transportation www.ti.com/automotive Amplifiers amplifier.ti.com Communications and Telecom www.ti.com/communications Data Converters dataconverter.ti.com Computers and Peripherals www.ti.com/computers DLP® Products www.dlp.com Consumer Electronics www.ti.com/consumer-apps DSP dsp.ti.com Energy and Lighting www.ti.com/energy Clocks and Timers www.ti.com/clocks Industrial www.ti.com/industrial Interface interface.ti.com Medical www.ti.com/medical Logic logic.ti.com Security www.ti.com/security Power Mgmt power.ti.com Space, Avionics and Defense www.ti.com/space-avionics-defense Microcontrollers microcontroller.ti.com Video and Imaging www.ti.com/video RFID www.ti-rfid.com OMAP Applications Processors www.ti.com/omap TI E2E Community e2e.ti.com Wireless Connectivity www.ti.com/wirelessconnectivity Mailing Address: Texas Instruments, Post Office Box 655303, Dallas, Texas 75265 Copyright © 2015, Texas Instruments Incorporated