LM833-N_13 TI1 | Alldatasheet
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www.ti.com SNOSBD8E –MAY 2004–REVISED MAY 2012 LM833-NDualAudioOperationalAmplifier Check forSamples: LM833-N 1FEATURES DESCRIPTION The LM833-N isa dualgeneralpurpose operational 2• Wide Dynamic Range: >140dB amplifierdesigned with particularemphasis on• Low InputNoise Voltage:4.5nV/√Hz performanceinaudiosystems.
- High Slew Rate:7 V/μs (typ);5V/μs (Min) This dual amplifierIC utilizesnew circuitand• High Gain Bandwidth: 15MHz (typ);10MHz processingtechniquesto deliverlow noise,high(Min) speed and wide bandwidth without increasing externalcomponents or decreasingstability.The• Wide Power Bandwidth: 120KHz LM833-N isinternallycompensated forallclosedloop• Low Distortion:0.002% gainsand isthereforeoptimizedforallpreamp and• Low OffsetVoltage:0.3mV highlevelstagesinPCM and HiFisystems.
- Large Phase Margin:60° The LM833-N ispin-for-pincompatiblewithindustry• Availablein8 Pin VSSOP Package standarddualoperationalamplifiers. Schematic Diagram (1/2LM833-N) Pleasebe aware thatan importantnoticeconcerningavailability,standardwarranty,and use incriticalapplicationsof Texas Instrumentssemiconductorproductsand disclaimerstheretoappearsattheend ofthisdatasheet. 2Alltrademarksarethepropertyoftheirrespectiveowners. PRODUCTION DATA informationiscurrentas ofpublicationdate. Copyright© 2004–2012,Texas InstrumentsIncorporatedProductsconform to specificationsper the terms of the Texas Instrumentsstandardwarranty.Productionprocessingdoes not necessarilyincludetestingofallparameters.
SNOSBD8E –MAY 2004–REVISED MAY 2012 www.ti.com Connection Diagram Figure1. See Package Number D0008A, P0008E or DGK0008A These deviceshave limitedbuilt-inESD protection.The leadsshouldbe shortedtogetherorthedeviceplacedinconductivefoam duringstorageorhandlingtopreventelectrostaticdamage totheMOS gates. ABSOLUTE MAXIMUM RATINGS (1)(2) SupplyVoltageVCC –VEE 36V DifferentialInputVoltage(3)VI ±30V InputVoltageRange (3)VIC ±15V Power Dissipation(4)PD 500 mW OperatingTemperatureRange TOPR −40 ∼ 85°C StorageTemperatureRange TSTG −60 ∼ 150°C SolderingInformation PDIP Package Soldering(10seconds) 260°C SmallOutlinePackage (SOIC and VSSOP) Vapor Phase (60seconds) 215°C Infrared(15seconds) 220°C ESD tolerance(5) 1600V (1) AbsoluteMaximum Ratingsindicatelimitsbeyond whichdamage tothedevicemay occur.OperatingRatingsindicateconditionsfor whichthedeviceisfunctional,butdo notensurespecificperformancelimits.ElectricalCharacteristicsstateDC and AC electrical specificationsunderparticulartestconditionswhichensurespecificperformancelimits.Thisassumes thatthedeviceiswithinthe OperatingRatings.Specificationsarenotensuredforparameterswhere no limitisgiven,however,thetypicalvalueisa good indication ofdeviceperformance. (2) IfMilitary/Aerospacespecifieddevicesarerequired,pleasecontacttheTexas InstrumentsSalesOffice/Distributorsforavailabilityand specifications. (3) Ifsupplyvoltageislessthan±15V,itisequaltosupplyvoltage. (4) ThisisthepermissiblevalueatTA ≤ 85°C. (5) Human body model,1.5kΩ inserieswith100 pF.
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www.ti.com SNOSBD8E –MAY 2004–REVISED MAY 2012 DC ELECTRICAL CHARACTERISTICS (1)(2) (TA = 25°C, VS = ±15V) Symbol Parameter Conditions Min Typ Max Units VOS InputOffsetVoltage R S = 10Ω 0.3 5 mV IOS InputOffsetCurrent 10 200 nA IB InputBiasCurrent 500 1000 nA AV VoltageGain R L = 2 kΩ,VO = ±10V 90 110 dB R L = 10 kΩ ±12 ±13.5 V VOM OutputVoltageSwing R L = 2 kΩ ±12 ±13.4 V VCM InputCommon-Mode Range ±12 ±14.0 V CMRR Common-Mode RejectionRatio VIN = ±12V 80 100 dB PSRR Power SupplyRejectionRatio VS = 15 ∼ 5V,−15 ∼ −5V 80 100 dB IQ SupplyCurrent VO = 0V,BothAmps 5 8 mA (1) AbsoluteMaximum Ratingsindicatelimitsbeyond whichdamage tothedevicemay occur.OperatingRatingsindicateconditionsfor whichthedeviceisfunctional,butdo notensurespecificperformancelimits.ElectricalCharacteristicsstateDC and AC electrical specificationsunderparticulartestconditionswhichensurespecificperformancelimits.Thisassumes thatthedeviceiswithinthe OperatingRatings.Specificationsarenotensuredforparameterswhere no limitisgiven,however,thetypicalvalueisa good indication ofdeviceperformance. (2) Allvoltagesaremeasured withrespecttothegroundpin,unlessotherwisespecified. AC ELECTRICAL CHARACTERISTICS (TA = 25°C, VS = ±15V,R L = 2 kΩ) Symbol Parameter Conditions Min Typ Max Units SR Slew Rate R L = 2 kΩ 5 7 V/μs GBW Gain BandwidthProduct f= 100 kHz 10 15 MHz EquivalentInputNoiseVoltageVNI RIAA,R S = 2.2kΩ(1) 1.4 μV(LM833AM, LM833AMX) (1) RIAA NoiseVoltageMeasurement Circuit DESIGN ELECTRICAL CHARACTERISTICS (TA = 25°C, VS = ±15V) The followingparametersarenottestedorensured. Symbol Parameter Conditions Typ Units ΔVOS /ΔT AverageTemperatureCoefficient 2 μV/°C ofInputOffsetVoltage THD Distortion R L = 2 kΩ,f= 20∼20 kHz 0.002 % VOUT = 3 Vrms,AV = 1 en InputReferredNoiseVoltage R S = 100Ω,f= 1 kHz 4.5 nV /√Hz in InputReferredNoiseCurrent f= 1 kHz 0.7 pA /√Hz PBW Power Bandwidth VO = 27 Vpp,R L = 2 kΩ,THD ≤ 1% 120 kHz fU UnityGain Frequency Open Loop 9 MHz φM Phase Margin Open Loop 60 deg InputReferredCrossTalk f= 20∼20 kHz −120 dB Copyright© 2004–2012,Texas InstrumentsIncorporated SubmitDocumentationFeedback 3 ProductFolderLinks:LM833-N
SNOSBD8E –MAY 2004–REVISED MAY 2012 www.ti.com TYPICAL PERFORMANCE CHARACTERISTICS Maximum Power InputBias Currentvs Dissipation Ambient Temperature vs Ambient Temperature Figure2. Figure3. InputBias Currentvs Supply Voltage Supply Currentvs Supply Voltage Figure4. Figure5. DC VoltageGain DC VoltageGain vs Ambient Temperature vs Supply Voltage Figure6. Figure7.
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www.ti.com SNOSBD8E –MAY 2004–REVISED MAY 2012 TYPICAL PERFORMANCE CHARACTERISTICS (continued) VoltageGain & Phase Gain Bandwidth Product vs Frequency vs Ambient Temperature Figure8. Figure9. Gain Bandwidth Slew Rate vs vs Supply Voltage Ambient Temperature Figure10. Figure11. Slew Rate vs Power Bandwidth Supply Voltage Figure12. Figure13. Copyright© 2004–2012,Texas InstrumentsIncorporated SubmitDocumentationFeedback 5 ProductFolderLinks:LM833-N
SNOSBD8E –MAY 2004–REVISED MAY 2012 www.ti.com TYPICAL PERFORMANCE CHARACTERISTICS (continued) CMR vs Frequency Distortionvs Frequency Figure14. Figure15. Maximum Output Voltagevs PSRR vs Frequency Supply Voltage Figure16. Figure17. Maximum Output Voltagevs Spot Noise Voltage Ambient Temperature vs Frequency Figure18. Figure19.
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www.ti.com SNOSBD8E –MAY 2004–REVISED MAY 2012 TYPICAL PERFORMANCE CHARACTERISTICS (continued) Spot Noise Current InputReferredNoise Voltage vs Frequency vs Source Resistance Figure20. Figure21. NoninvertingAmp NoninvertingAmp Figure22. Figure23. InvertingAmp Figure24. Copyright© 2004–2012,Texas InstrumentsIncorporated SubmitDocumentationFeedback 7 ProductFolderLinks:LM833-N
SNOSBD8E –MAY 2004–REVISED MAY 2012 www.ti.com APPLICATION HINTS The LM833-N isa highspeed op amp withexcellentphase marginand stability.Capacitiveloadsup to50 pF will cause littlechange inthephase characteristicsoftheamplifiersand arethereforeallowable. Capacitiveloadsgreaterthan50 pF must be isolatedfromtheoutput.The most straightforwardway todo thisis toputa resistorinserieswiththeoutput.Thisresistorwillalsopreventexcesspower dissipationiftheoutputis accidentallyshorted. Noise Measurement Circuit Completeshieldingisrequiredtopreventinducedpickup fromexternalsources.Alwayscheckwithoscilloscopefor power linenoise. Figure25. TotalGain:115 dB @f = 1 kHz InputReferredNoise Voltage:en = V0/560,000(V)
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www.ti.com SNOSBD8E –MAY 2004–REVISED MAY 2012 RIAA Noise VoltageMeasurement Circuit RIAA Preamp VoltageGain,RIAA FlatAmp VoltageGain vs Deviationvs Frequency Frequency Figure26. Figure27. Copyright© 2004–2012,Texas InstrumentsIncorporated SubmitDocumentationFeedback 9 ProductFolderLinks:LM833-N
SNOSBD8E –MAY 2004–REVISED MAY 2012 www.ti.com TypicalApplications AV = 34.5 F = 1 kHz En = 0.38μV A Weighted Figure28. NAB Preamp Figure29. NAB Preamp VoltageGain vs Frequency VO = V1–V2 Figure30. Balanced toSingleEnded Converter
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www.ti.com SNOSBD8E –MAY 2004–REVISED MAY 2012 VO = V1 + V2 − V3 − V4 Figure31. Adder/Subtracter Figure32. Sine Wave Oscillator Illustrationisf0 = 1 kHz Figure33. Second Order High Pass Filter(Butterworth) Copyright© 2004–2012,Texas InstrumentsIncorporated SubmitDocumentationFeedback 11 ProductFolderLinks:LM833-N
SNOSBD8E –MAY 2004–REVISED MAY 2012 www.ti.com Illustrationisf0 = 1 kHz Figure34. Second Order Low Pass Filter(Butterworth) Illustrationisf0 = 1 kHz,Q = 10,ABP = 1 Figure35. StateVariableFilter Figure36. AC/DC Converter
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www.ti.com SNOSBD8E –MAY 2004–REVISED MAY 2012 Figure37. 2 Channel Panning Circuit(Pan Pot) Figure38. LineDriver Copyright© 2004–2012,Texas InstrumentsIncorporated SubmitDocumentationFeedback 13 ProductFolderLinks:LM833-N
SNOSBD8E –MAY 2004–REVISED MAY 2012 www.ti.com Illustrationis: fL = 32 Hz,fLB = 320 Hz fH =11 kHz,fHB = 1.1kHz Figure39. Tone Control Av = 35 dB En = 0.33μV S/N = 90 dB f= 1 kHz A Weighted A Weighted,VIN = 10 mV @f = 1 kHz Figure40. RIAA Preamp
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www.ti.com SNOSBD8E –MAY 2004–REVISED MAY 2012 Illustrationis: V0 = 101(V2 − V1) Figure41. Balanced InputMic Amp Copyright© 2004–2012,Texas InstrumentsIncorporated SubmitDocumentationFeedback 15 ProductFolderLinks:LM833-N
SNOSBD8E –MAY 2004–REVISED MAY 2012 www.ti.com Figure42. 10 Band Graphic Equalizer fo(Hz) C 1 C 2 R 1 R 2 32 0.12μF 4.7μF 75kΩ 500Ω 64 0.056μF 3.3μF 68kΩ 510Ω 125 0.033μF 1.5μF 62kΩ 510Ω 250 0.015μF 0.82μF 68kΩ 470Ω 500 8200pF 0.39μF 62kΩ 470Ω 1k 3900pF 0.22μF 68kΩ 470Ω 2k 2000pF 0.1μF 68kΩ 470Ω 4k 1100pF 0.056μF 62kΩ 470Ω 8k 510pF 0.022μF 68kΩ 510Ω 16k 330pF 0.012μF 51kΩ 510Ω Note:Atvolume ofchange = ±12 dB Q = 1. LM833-N MDC MWC DUAL AUDIO OPERATIONAL AMPLIFIER Figure43. Die Layout (A -Step)
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www.ti.com 11-Apr-2013 Addendum-Page 1 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Drawing Pins Package Qty Eco Plan (2) Lead/Ball Finish MSL Peak Temp (3) Op Temp (°C) Top-Side Markings (4) Samples LM833M ACTIVE SOIC D 8 95 TBD Call TI Call TI -40 to 85 LM833 M LM833M/NOPB ACTIVE SOIC D 8 95 Green (RoHS & no Sb/Br) CU SN Level-1-260C-UNLIM -40 to 85 LM833 M LM833MM ACTIVE VSSOP DGK 8 1000 TBD Call TI Call TI -40 to 85 Z83 LM833MM/NOPB ACTIVE VSSOP DGK 8 1000 Green (RoHS & no Sb/Br) CU SN Level-1-260C-UNLIM -40 to 85 Z83 LM833MMX/NOPB ACTIVE VSSOP DGK 8 3500 Green (RoHS & no Sb/Br) CU SN Level-1-260C-UNLIM -40 to 85 Z83 LM833MX ACTIVE SOIC D 8 2500 TBD Call TI Call TI -40 to 85 LM833 M LM833MX/NOPB ACTIVE SOIC D 8 2500 Green (RoHS & no Sb/Br) CU SN Level-1-260C-UNLIM -40 to 85 LM833 M LM833N ACTIVE PDIP P 8 40 TBD Call TI Call TI -40 to 85 LM 833N LM833N/NOPB ACTIVE PDIP P 8 40 Green (RoHS & no Sb/Br) Call TI Level-1-NA-UNLIM -40 to 85 LM 833N (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability information and additional product content details. TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above. Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material) (3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
www.ti.com 11-Apr-2013 Addendum-Page 2 (4) Multiple Top-Side Markings will be inside parentheses. Only one Top-Side Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation of the previous line and the two combined represent the entire Top-Side Marking for that device. Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release. In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
*All dimensions are nominal Device Package Type Package Drawing Pins SPQ Reel Diameter (mm) Reel Width W1 (mm) (mm) (mm) (mm) (mm) W (mm) Pin1 Quadrant PACKAGE MATERIALS INFORMATION www.ti.com 21-Mar-2013 Pack Materials-Page 1
*All dimensions are nominal Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) LM833MM VSSOP DGK 8 1000 210.0 185.0 35.0 LM833MM/NOPB VSSOP DGK 8 1000 210.0 185.0 35.0 LM833MMX/NOPB VSSOP DGK 8 3500 367.0 367.0 35.0 LM833MX SOIC D 8 2500 367.0 367.0 35.0 LM833MX/NOPB SOIC D 8 2500 367.0 367.0 35.0 PACKAGE MATERIALS INFORMATION www.ti.com 21-Mar-2013 Pack Materials-Page 2
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