LM8261M5X/NOPB

LM8261M5 TI1 | Alldatasheet

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www.ti.com SNOS469I –APRIL 2000–REVISED MARCH 2013 LM8261SingleRRIO,HighOutputCurrent& UnlimitedCapLoadOpAmp inSOT-23-5 Check forSamples: LM8261 1FEATURES DESCRIPTION The LM8261 is a Rail-to-Railinputand outputOp2(VS = 5V, TA = 25°C, Typical Values Unless Amp which can operatewitha wide supplyvoltageSpecified). range. This device has high outputcurrentdrive,• GBWP 21MHz greaterthanRail-to-Railinputcommon mode voltage

• Wide Supply VoltageRange 2.5Vto30V range,unlimitedcapacitiveloaddrivecapability,and providestestedand guaranteedhighspeed and slew• Slew Rate 12V/µs ratewhilerequiringonly0.97mA supplycurrent.Itis• Supply Current0.97mA specificallydesigned to handle the requirementsof
• Cap Load LimitUnlimited flatpanelTFT panelVCOM driverapplicationsas well as being suitableforotherlow power, and medium• Output ShortCircuitCurrent+53mA/ −75mA speed applicationswhich requireease of use and• ±5% SettlingTime 400ns (500pF,100mV PP enhanced performanceoverexistingdevices.step) GreaterthanRail-to-Railinputcommon mode voltage• Inputcommon mode voltage0.3Vbeyond rails range with50dB ofCommon Mode Rejection,allows• Inputvoltagenoise15nV/√Hz high side and low side sensing,among many
• Inputcurrentnoise1pA/√Hz applications,without having any concerns over exceedingtherangeand no compromise inaccuracy.• THD+N < 0.05% Exceptionallywide operatingsupplyvoltagerange of 2.5V to30V alleviatesany concernsoverfunctionalityAPPLICATIONS under extremeconditionsand offersflexibilityofuse
• TFT-LCD flatpanelVCOM driver inmultitudeof applications.In addition,most device parametersareinsensitivetopower supplyvariations;• A/D converterbuffer thisdesign enhancement is yet another step in• High side/lowsidesensing simplifyingitsusage. The output stage has low
• Headphone amplifier distortion(0.05% THD+N) and can supply a respectableamount of current(15mA) withminimal headroom fromeitherrail(300mV). The LM8261 isofferedinthespace savingSOT-23-5 package. Figure1.Output Response with Figure2.SOT-23-5 Heavy CapacitiveLoad Top View These deviceshave limitedbuilt-inESD protection.The leadsshouldbe shortedtogetherorthedeviceplacedinconductivefoam duringstorageorhandlingtopreventelectrostaticdamage totheMOS gates. Pleasebe aware thatan importantnoticeconcerningavailability,standardwarranty,and use incriticalapplicationsof Texas Instrumentssemiconductorproductsand disclaimerstheretoappearsattheend ofthisdatasheet. 2Alltrademarksarethepropertyoftheirrespectiveowners. PRODUCTION DATA informationiscurrentas ofpublicationdate. Copyright© 2000–2013,Texas InstrumentsIncorporatedProductsconform to specificationsper the terms of the Texas Instrumentsstandardwarranty.Productionprocessingdoes not necessarilyincludetestingofallparameters.

SNOS469I –APRIL 2000–REVISED MARCH 2013 www.ti.com ABSOLUTE MAXIMUM RATINGS (1) Human Body Model(2) 2KV ESD Tolerance Machine Model(3) 200V VIN Differential +/−10V OutputShortCircuitDuration See (4)(5) SupplyVoltage(V+ -V−) 32V VoltageatInput/Outputpins V+ +0.8V,V− −0.1V StorageTemperatureRange −65°C to+150°C JunctionTemperature(6) +150°C SolderingInformation: InfraredorConvection(20sec.) 235°C Wave Soldering(10sec.) 260°C (1) AbsoluteMaximum Ratingsindicatelimitsbeyond whichdamage tothedevicemay occur.OperatingRatingindicateconditionsfor whichthedeviceisintendedtobe functional,butspecificperformanceisnotguaranteed.Forguaranteedspecificationsand thetest conditions,see 2.7VElectricalCharacteristics. (2) Human Body Model is1.5kΩ inserieswith100pF. (3) Machine Model,0Ω isserieswith200pF. (4) Appliestobothsingle-supplyand split-supplyoperation.Continuousshortcircuitoperationatelevatedambienttemperaturecan resultin exceedingthemaximum allowedjunctiontemperatureof150°C. (5) AllowableOutputShortCircuitdurationisinfiniteforVS ≤ 6V atroom temperatureand below.ForVS > 6V,allowableshortcircuit durationis1.5ms. (6) The maximum power dissipationisa functionofTJ(max),θJA,and TA.The maximum allowablepower dissipationatany ambient temperatureisPD = (TJ(MAX) -TA)/θJA.Allnumbers applyforpackagessoldereddirectlyontoa PC board. OPERATING RATINGS SupplyVoltage(V+ -V−) 2.5Vto30V TemperatureRange (1) −40°C to+85°C Package ThermalResistance,θJA,(1) SOT-23-5 325°C/W (1) The maximum power dissipationisa functionofTJ(max),θJA,and TA.The maximum allowablepower dissipationatany ambient temperatureisPD = (TJ(MAX) -TA)/θJA.Allnumbers applyforpackagessoldereddirectlyontoa PC board.

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www.ti.com SNOS469I –APRIL 2000–REVISED MARCH 2013 2.7VELECTRICAL CHARACTERISTICS Unlessotherwisespecified,alllimitsguaranteedforTA = 25°C, V+ = 2.7V,V− = 0V,VCM = 0.5V,VO = V+/2,and R L > 1M Ω to V−.Boldfacelimitsapplyatthetemperatureextremes.(1) Symbol Parameter Condition Typ (2) Limit(3) Units VOS InputOffsetVoltage VCM = 0.5V& VCM = 2.2V +/−0.7 +/−5 mV +/−7 max TC VOS InputOffsetAverageDrift VCM = 0.5V& VCM = 2.2V(4) +/−2 – µV/C IB InputBiasCurrent VCM = 0.5V(5) −1.20 −2.00 −2.70 µA maxVCM = 2.2V(5) +0.49 +1.00 +1.60 IOS InputOffsetCurrent VCM = 0.5V& VCM = 2.2V 20 250 nA 400 max CMRR Common Mode RejectionRatio VCM steppedfrom0V to1.0V 100 76 dBVCM steppedfrom1.7Vto2.7V 100 min VCM steppedfrom0V to2.7V 70 58 +PSRR PositivePower SupplyRejection V+ = 2.7Vto5V 104 78 dB Ratio 74 min CMVR InputCommon-Mode Voltage CMRR > 50dB −0.3 −0.1 V Range 0.0 max 3.0 2.8 V 2.7 min AVOL LargeSignalVoltageGain VO = 0.5to2.2V, 78 70 dB R L = 10K toV− 67 min VO = 0.5to2.2V, 73 67 dB R L = 2K toV− 63 min VO OutputSwing R L = 10K toV− 2.59 2.49 High 2.46 V minR L = 2K toV− 2.53 2.45 2.41 OutputSwing R L = 10K toV− 90 100 mV Low 120 max ISC OutputShortCircuitCurrent SourcingtoV− 48 30 mA VID = 200mV (6)(7) 20 min SinkingtoV+ 65 50 mA VID = −200mV (6)(7) 30 min IS SupplyCurrent No load,VCM = 0.5V 0.95 1.20 mA 1.50 max SR Slew Rate(8) AV = +1,VI= 2VPP 9 – V/µs fu UnityGain-Frequency VI= 10mV, R L = 2KΩ toV+/2 10 – MHz GBWP Gain BandwidthProduct f= 50KHz 21 15.5 MHz 14 min Phim Phase Margin VI= 10mV 50 – Deg en Input-ReferredVoltageNoise f= 2KHz, R S = 50Ω 15 – nV/√Hz in Input-ReferredCurrentNoise f= 2KHz 1 pA/√Hz (1) ElectricalTablevaluesapplyonlyforfactorytestingconditionsatthetemperatureindicated.Factorytestingconditionsresultinvery limitedself-heatingofthedevicesuch thatTJ = TA. No guaranteeofparametricperformanceisindicatedintheelectricaltablesunder conditionsofinternalselfheatingwhere TJ > TA. (2) TypicalValuesrepresentthemost likelyparametricnorm. (3) Alllimitsareguaranteedby testingorstatisticalanalysis. (4) Offsetvoltageaveragedriftdeterminedby dividingthechange inVOS attemperatureextremesintothetotaltemperaturechange. (5) Positivecurrentcorrespondstocurrentflowingintothedevice. (6) ProductionShortCircuittestisa momentary test.See Note 7. (7) AllowableOutputShortCircuitdurationisinfiniteforVS ≤ 6V atroom temperatureand below.ForVS > 6V,allowableshortcircuit durationis1.5ms. (8) Slew rateisthesloweroftherisingand fallingslewrates.Connectedas a VoltageFollower. Copyright© 2000–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 3 ProductFolderLinks:LM8261

SNOS469I –APRIL 2000–REVISED MARCH 2013 www.ti.com 2.7VELECTRICAL CHARACTERISTICS (continued) Unlessotherwisespecified,alllimitsguaranteedforTA = 25°C, V+ = 2.7V,V− = 0V,VCM = 0.5V,VO = V+/2,and R L > 1M Ω to V−.Boldfacelimitsapplyatthetemperatureextremes.(1) Symbol Parameter Condition Typ (2) Limit(3) Units fMAX FullPower Bandwidth ZL = (20pF||10KΩ)toV+/2 1 – MHz 5V ELECTRICAL CHARACTERISTICS (1) Unlessotherwisespecified,alllimitedguaranteedforTA = 25°C, V+ = 5V,V− = 0V,VCM = 1V,VO = V+/2,and R L > 1M Ω toV−. Boldfacelimitsapplyatthetemperatureextremes. Symbol Parameter Condition Typ (2) Limit(3) Units VOS InputOffsetVoltage VCM = 1V & VCM = 4.5V +/−0.7 +/−5 mV +/− 7 max TC VOS InputOffsetAverageDrift VCM = 1V & VCM = 4.5V(4) +/−2 – µV/°C IB InputBiasCurrent VCM = 1V (5) −1.18 −2.00 −2.70 µA maxVCM = 4.5V(5) +0.49 +1.00 +1.60 IOS InputOffsetCurrent VCM = 1V & VCM = 4.5V 20 250 nA 400 max CMRR Common Mode RejectionRatio VCM steppedfrom0V to3.3V 110 84 dBVCM steppedfrom4V to5V 100 – min VCM steppedfrom0V to5V 80 64 +PSRR PositivePower SupplyRejectionRatio V+ = 2.7Vto5V,VCM = 0.5V 104 78 dB 74 min CMVR InputCommon-Mode VoltageRange CMRR > 50dB −0.3 −0.1 V 0.0 max 5.3 5.1 V 5.0 min AVOL LargeSignalVoltageGain VO = 0.5to4.5V, 84 74 R L = 10K toV− 70 dB minVO = 0.5to4.5V, 80 70 R L = 2K toV− 66 VO OutputSwing R L = 10K toV− 4.87 4.75 High 4.72 V minR L = 2K toV− 4.81 4.70 4.66 OutputSwing R L = 10K toV− 86 125 mV Low 135 max ISC OutputShortCircuitCurrent SourcingtoV− 53 35 VID = 200mV (6)(7) 20 mA minSinkingtoV+ 75 60 IS SupplyCurrent No load,VCM = 1V 0.97 1.25 mA 1.75 max (1) ElectricalTablevaluesapplyonlyforfactorytestingconditionsatthetemperatureindicated.Factorytestingconditionsresultinvery limitedself-heatingofthedevicesuch thatTJ = TA. No guaranteeofparametricperformanceisindicatedintheelectricaltablesunder conditionsofinternalselfheatingwhere TJ > TA. (2) TypicalValuesrepresentthemost likelyparametricnorm. (3) Alllimitsareguaranteedby testingorstatisticalanalysis. (4) Offsetvoltageaveragedriftdeterminedby dividingthechange inVOS attemperatureextremesintothetotaltemperaturechange. (5) Positivecurrentcorrespondstocurrentflowingintothedevice. (6) ProductionShortCircuittestisa momentary test.See Note 7. (7) AllowableOutputShortCircuitdurationisinfiniteforVS ≤ 6V atroom temperatureand below.ForVS > 6V,allowableshortcircuit durationis1.5ms.

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www.ti.com SNOS469I –APRIL 2000–REVISED MARCH 2013 5V ELECTRICAL CHARACTERISTICS (1)(continued) Unlessotherwisespecified,alllimitedguaranteedforTA = 25°C, V+ = 5V,V− = 0V,VCM = 1V,VO = V+/2,and R L > 1M Ω toV−. Boldfacelimitsapplyatthetemperatureextremes. Symbol Parameter Condition Typ (2) Limit(3) Units SR Slew Rate(8) AV = +1,VI= 5VPP 12 10 V/µs 7 min fu UnityGain Frequency VI= 10mV, 10.5 – MHz R L = 2KΩ toV+/2 GBWP Gain-BandwidthProduct f= 50KHz 21 16 MHz 15 min Phim Phase Margin VI= 10mV 53 – Deg en Input-ReferredVoltageNoise f= 2KHz, R S = 50Ω 15 – nV/√hZ in Input-ReferredCurrentNoise f= 2KHz 1 – pA/√hZ fMAX FullPower Bandwidth ZL = (20pF||10kΩ)toV+/2 900 – KHz tS SettlingTime (±5%) 100mV PP Step,500pF load 400 – ns THD+N TotalHarmonicDistortion+ Noise R L = 1KΩ toV+/2 0.05 – % f= 10KHz toAV= +2,4VPP swing (8) Slew rateisthesloweroftherisingand fallingslewrates.Connectedas a VoltageFollower. ±15V ELECTRICAL CHARACTERISTICS (1) Unlessotherwisespecified,alllimitedguaranteedforTA = 25°C, V+ = 15V,V− = −15V,VCM = 0V,VO = 0V,and R L > 1M Ω to 0V.Boldfacelimitsapplyatthetemperatureextremes. Symbol Parameter Condition Typ (2) Limit(3) Units VOS InputOffsetVoltage VCM = −14.5V& VCM = 14.5V +/−0.7 +/−7 mV +/− 9 max TC VOS InputOffsetAverageDrift VCM = −14.5V& VCM = 14.5V(4) +/−2 – µV/°C IB InputBiasCurrent VCM = −14.5V(5) −1.05 −2.00 −2.80 µA +1.50 IOS InputOffsetCurrent VCM = −14.5V& VCM = 14.5V 30 275 nA 550 max CMRR Common Mode RejectionRatio VCM steppedfrom−15V to13V 100 84 dBVCM steppedfrom14V to15V 100 – min VCM steppedfrom−15V to15V 88 74 +PSRR PositivePower SupplyRejectionRatio V+ = 12V to15V 100 70 dB 66 min −PSRR NegativePower SupplyRejectionRatio V− = −12V to−15V 100 70 dB 66 min CMVR InputCommon-Mode VoltageRange CMRR > 50dB −15.3 −15.1 V −15.0 max 15.3 15.1 V 15.0 min AVOL LargeSignalVoltageGain VO = 0V to±13V, 85 78 R L = 10KΩ 74 dB minVO = 0V to±13V, 79 72 R L = 2KΩ 66 (1) ElectricalTablevaluesapplyonlyforfactorytestingconditionsatthetemperatureindicated.Factorytestingconditionsresultinvery limitedself-heatingofthedevicesuch thatTJ = TA.No guaranteeofparametricperformanceisindicatedintheelectricaltablesunder conditionsofinternalselfheatingwhere TJ > TA. (2) TypicalValuesrepresentthemost likelyparametricnorm. (3) Alllimitsareguaranteedby testingorstatisticalanalysis. (4) Offsetvoltageaveragedriftdeterminedby dividingthechange inVOS attemperatureextremesintothetotaltemperaturechange. (5) Positivecurrentcorrespondstocurrentflowingintothedevice. Copyright© 2000–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 5 ProductFolderLinks:LM8261

SNOS469I –APRIL 2000–REVISED MARCH 2013 www.ti.com ±15V ELECTRICAL CHARACTERISTICS (1)(continued) Unlessotherwisespecified,alllimitedguaranteedforTA = 25°C, V+ = 15V,V− = −15V,VCM = 0V,VO = 0V,and R L > 1M Ω to 0V.Boldfacelimitsapplyatthetemperatureextremes. Symbol Parameter Condition Typ (2) Limit(3) Units VO OutputSwing R L = 10KΩ 14.83 14.65 High 14.61 V minR L = 2KΩ 14.73 14.60 14.55 OutputSwing R L = 10KΩ −14.91 −14.75 Low −14.65 V maxR L = 2KΩ −14.83 −14.65 −14.60 ISC OutputShortCircuitCurrent Sourcingtoground 60 40 VID = 200mV (6)(7) 25 mA minSinkingtoground 100 70 VID = 200mV (6)(7) 60 IS SupplyCurrent No load,VCM = 0V 1.30 1.50 mA 1.90 max SR Slew Rate(8) AV = +1,VI= 24VPP 15 10 V/µs 8 min fu UnityGain Frequency VI= 10mV, R L = 2KΩ 14 – MHz GBWP Gain-BandwidthProduct f= 50KHz 24 18 MHz 16 min Phim Phase Margin VI= 10mV 58 – Deg en Input-ReferredVoltageNoise f= 2KHz, R S = 50Ω 15 – nV/√hZ in Input-ReferredCurrentNoise f= 2KHz 1 – pA/√hZ fMAX FullPower Bandwidth ZL = 20pF ||10KΩ 160 – KHz ts SettlingTime (±1%, AV = +1) PositiveStep,5VPP 320 – ns NegativeStep,5VPP 600 – THD+N TotalHarmonicDistortion+Noise R L = 1KΩ,f= 10KHz, 0.01 – % AV = +2,28VPP swing (6) ProductionShortCircuittestisa momentary test.See Note 7. (7) AllowableOutputShortCircuitdurationisinfiniteforVS ≤ 6V atroom temperatureand below.ForVS > 6V,allowableshortcircuit durationis1.5ms. (8) Slew rateisthesloweroftherisingand fallingslewrates.Connectedas a VoltageFollower.

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www.ti.com SNOS469I –APRIL 2000–REVISED MARCH 2013 TYPICAL PERFORMANCE CHARACTERISTICS TA = 25°C, UnlessOtherwiseNoted VOS vs.VCM for3 RepresentativeUnits VOS vs.VCM for3 RepresentativeUnits Figure3. Figure4. VOS vs.VCM for3 RepresentativeUnits VOS vs.VS for3 RepresentativeUnits Figure5. Figure6. VOS vs.VS for3 RepresentativeUnits VOS vs.VS for3 RepresentativeUnits Figure7. Figure8. Copyright© 2000–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 7 ProductFolderLinks:LM8261

SNOS469I –APRIL 2000–REVISED MARCH 2013 www.ti.com TYPICAL PERFORMANCE CHARACTERISTICS (continued) TA = 25°C, UnlessOtherwiseNoted IB vs.VCM IB vs.VS Figure9. Figure10. IS vs.VCM IS vs.VCM Figure11. Figure12. IS vs.VCM IS vs.VS (PNP side) Figure13. Figure14.

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www.ti.com SNOS469I –APRIL 2000–REVISED MARCH 2013 TYPICAL PERFORMANCE CHARACTERISTICS (continued) TA = 25°C, UnlessOtherwiseNoted IS vs.VS (NPN side) Gain/Phase vs.Frequency Figure15. Figure16. UnityGain Frequency vs.VS Phase Margin vs.VS Figure17. Figure18. UnityGain Freq.and Phase Margin vs.VS UnityGain Frequency vs.Load Figure19. Figure20. Copyright© 2000–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 9 ProductFolderLinks:LM8261

SNOS469I –APRIL 2000–REVISED MARCH 2013 www.ti.com TYPICAL PERFORMANCE CHARACTERISTICS (continued) TA = 25°C, UnlessOtherwiseNoted Phase Margin vs.Load UnityGain Freq.and Phase Margin vs.C L Figure21. Figure22. CMRR vs.Frequency +PSRR vs.Frequency Figure23. Figure24. −PSRR vs.Frequency Output Voltagevs.Output Sourcing Current Figure25. Figure26.

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www.ti.com SNOS469I –APRIL 2000–REVISED MARCH 2013 TYPICAL PERFORMANCE CHARACTERISTICS (continued) TA = 25°C, UnlessOtherwiseNoted Output Voltagevs.Output Sourcing Current Output Voltagevs.Output SinkingCurrent Figure27. Figure28. Max Output Swing vs.Load Max Output Swing vs.Frequency Figure29. Figure30. % Overshoot vs.Cap Load ±5% SettlingTime vs.Cap Load Figure31. Figure32. Copyright© 2000–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 11 ProductFolderLinks:LM8261

SNOS469I –APRIL 2000–REVISED MARCH 2013 www.ti.com TYPICAL PERFORMANCE CHARACTERISTICS (continued) TA = 25°C, UnlessOtherwiseNoted +SR vs.Cap Load −SR vs.Cap Load Figure33. Figure34. +SR vs.Cap Load −SR vs.Cap Load Figure35. Figure36. SettlingTime vs.ErrorVoltage SettlingTime vs.ErrorVoltage Figure37. Figure38.

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www.ti.com SNOS469I –APRIL 2000–REVISED MARCH 2013 TYPICAL PERFORMANCE CHARACTERISTICS (continued) TA = 25°C, UnlessOtherwiseNoted InputNoise Voltage/Currentvs.Frequency InputNoise VoltageforVariousVCM Figure39. Figure40. InputNoise CurrentforVariousVCM InputNoise Voltagevs.VCM Figure41. Figure42. InputNoise Currentvs.VCM THD+N vs.Frequency Figure43. Figure44. Copyright© 2000–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 13 ProductFolderLinks:LM8261

SNOS469I –APRIL 2000–REVISED MARCH 2013 www.ti.com TYPICAL PERFORMANCE CHARACTERISTICS (continued) TA = 25°C, UnlessOtherwiseNoted THD+N vs.Frequency THD+N vs.Frequency Figure45. Figure46. THD+N vs.Amplitude THD+N vs.Amplitude Figure47. Figure48. Small SignalStep Response Large SignalStep Response Figure49. Figure50.

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www.ti.com SNOS469I –APRIL 2000–REVISED MARCH 2013 APPLICATION HINTS BLOCK DIAGRAM AND OPERATIONAL DESCRIPTION A) InputStage Figure51. SimplifiedSchematic Diagram As can be seen from thesimplifiedschematicinFigure51,theinputstageconsistsoftwo distinctdifferential pairs(Q1-Q2 and Q3-Q4) inordertoaccommodate thefullRail-to-Railinputcommon mode voltagerange.The voltagedrop acrossR5, R6, R7, and R8 iskepttolessthan200mV inordertoallowtheinputtoexceed the supplyrails.Q13 actsas a switchto steercurrentaway from Q3-Q4 and intoQ1-Q2, as the inputincreases beyond 1.4V ofV+.Thisinturnshiftsthesignalpathfrom thebottomstagedifferentialpairtothetopone and causesa subsequentincreaseinthesupplycurrent. Intransitioningfromone stagetoanother,certaininputstageparameters(VOS ,Ib,IOS ,en,and in)aredetermined based on whichdifferentialpairis"on"atthetime.InputBiascurrent,IB,willchange invalueand polarityas the inputcrossesthe transitionregion.In addition,parameterssuch as PSRR and CMRR which involvethe input offsetvoltagewillalsobe effectedby changes inVCM acrossthedifferentialpairtransitionregion. The inputstageisprotectedwiththecombinationofR9-R10 and D1, D2, D3, and D4 againstdifferentialinput over-voltages.Thisfaultconditioncouldotherwiseharm thedifferentialpairsorcause offsetvoltageshiftincase of prolongedover voltage.As shown in Figure52, ifthisvoltagereaches approximately±1.4V at 25°C, the diodesturnon and currentflowislimitedby theinternalseriesresistors(R9 and R10).The AbsoluteMaximum Ratingof ±10V differentialon VIN stillneeds to be observed.With temperaturevariation,the pointwere the diodesturnon willchange attherateof5mV/°C. Copyright© 2000–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 15 ProductFolderLinks:LM8261

SNOS469I –APRIL 2000–REVISED MARCH 2013 www.ti.com Figure52. InputStage Currentvs.DifferentialInputVoltage B) Output Stage The outputstageFigure51 iscomprisedof complementaryNPN and PNP common-emitterstagesto permit voltageswing towithina VCE(SAT) ofeithersupplyrail.Q9 suppliesthesourcingand Q10 suppliesthesinking currentload.Outputcurrentlimitingisachievedby limitingtheVCE ofQ9 and Q10; usingthisapproachtocurrent limiting,alleviatesthedraw back totheconventionalscheme whichrequiresone VBE reductioninoutputswing. The frequencycompensationcircuitincludesMillercapacitorsfrom collectorto base of each outputtransistor (seeFigure51,C comp9 and C comp10 ).At lightcapacitiveloads,thehighfrequencygainoftheoutputtransistorsis high,and theMillereffectincreasestheeffectivevalueofthecapacitorstherebystabilizingtheOp Amp. Large capacitiveloadsgreatlydecreasethe highfrequencygainof the outputtransistorsthusloweringthe effective internalMillercapacitance- the internalpole frequencyincreasesat the same time a low frequencypole is createdat the Op Amp outputdue to the largeload capacitor.In thisfashion,the internaldominant pole compensation,whichworksby reducingtheloopgaintolessthan0dB when thephase shiftaroundthefeedback loopismore than180°C, varieswiththeamount ofcapacitiveloadand becomes lessdominantwhen theload capacitorhas increasedenough. Hence the Op Amp isverystableeven at highvaluesof loadcapacitance resultingintheuncharacteristicfeatureofstabilityunderallcapacitiveloads. DRIVING CAPACITIVE LOADS The LM8261 isspecificallydesignedto driveunlimitedcapacitiveloadswithoutoscillations(See SettlingTime and PercentOvershootvs.Cap Load plot,Figure32).Inaddition,theoutputcurrenthandlingcapabilityofthe deviceallowsforgood slewingcharacteristicseven withlargecapacitiveloads(see Slew Rate vs.Cap Load plots).The combinationofthesefeaturesisidealforapplicationssuch as TFT flatpanelbuffers,A/D converter inputamplifiers,etc. However, as inmost Op Amps, additionofa seriesisolationresistorbetween theOp Amp and thecapacitive loadimprovesthesettlingand overshootperformance. Outputcurrentdriveisan importantparameterwhen drivingcapacitiveloads.Thisparameterwilldeterminehow fastthe outputvoltagecan change. Referringto the Slew Rate vs.Cap Load Plots(Figure33, Figure34, Figure35,and Figure36),two distinctregionscan be identified.Below about10,000pF,theoutputSlew Rate is solelydeterminedby the Op Amp's compensationcapacitorvalueand availablecurrentintothatcapacitor. Beyond 10nF,theSlew Rate isdeterminedby theOp Amp's availableoutputcurrent.Note thatbecause ofthe loweroutputsourcingcurrentcompared tothesinkingone,theSlew Rate limitunderheavy capacitiveloadingis determinedby the positivetransitions.An estimateof positiveand negativeslew ratesforloadslargerthan 100nF can be made by dividingtheshortcircuitcurrentvalueby thecapacitor.

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www.ti.com SNOS469I –APRIL 2000–REVISED MARCH 2013 For the LM8261, the availableoutputcurrentincreaseswiththe inputoverdrive.Referringto Figure53 and Figure54,OutputShortCircuitCurrentvs.InputOverdrive,itcan be seen thatbothsourcingand sinkingshort circuitcurrentincreaseas inputoverdriveincreases.In a closedloopamplifierconfiguration,duringtransient conditionswhilethefedback outputhas notquitecaughtup withtheinput,therewillbe an overdriveimposed on theinputallowingmore outputcurrentthanwould normallybe availableundersteadystatecondition.Because of thisfeature,theOp Amp's outputstagequiescentcurrentcan be kepttoa minimum, therebyreducingpower consumption,whileenablingthe deviceto deliverlargeoutputcurrentwhen the need arises(suchas during transients). Figure53. Output ShortCircuitSourcing Currentvs.InputOverdrive Figure54. Output ShortCircuitSinkingCurrentvs.InputOverdrive Figure55 shows theoutputvoltage,outputcurrent,and theresultinginputoverdrivewiththedevicesetforAV = +1 and the inputtiedto a 1VPP step functiondrivinga 47nF capacitor.As can be seen, duringthe output transition,theinputoverdrivereaches1V peak and ismore thanenough tocause theoutputcurrenttoincrease toitsmaximum value(seeFigure53 and Figure54 plots).Note thatbecause ofthelargeroutputsinkingcurrent compared tothesourcingone,theoutputnegativetransitionisfasterthanthepositiveone. Copyright© 2000–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 17 ProductFolderLinks:LM8261

SNOS469I –APRIL 2000–REVISED MARCH 2013 www.ti.com Figure55. BufferAmplifierscope photo ESTIMATING THE OUTPUT VOLTAGE SWING Itisimportanttokeep inmind thatthesteadystateoutputcurrentwillbe lessthanthecurrentavailablewhen thereisan inputoverdrivepresent.For steadystateconditions,the OutputVoltagevs.OutputCurrentplot( TYPICAL PERFORMANCE CHARACTERISTICS section)can be used to predictthe outputswing.Figure56 and Figure57 show thisperformancealongwithseveralloadlinescorrespondingto loadstiedbetween the outputand ground.Ineach cases,theintersectionofthedeviceplotattheappropriatetemperaturewiththeload linewould be the typicaloutputswing possibleforthatload.For example,a 1KΩ loadcan accommodate an outputswing to within250mV of V− and to 330mV of V+ (VS = ±15V) correspondingto a typical29.3VPP unclippedswing. Figure56. Output Sourcing CharacteristicswithLoad Lines

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www.ti.com SNOS469I –APRIL 2000–REVISED MARCH 2013 Figure57. Output SinkingCharacteristicswithLoad Lines TFT APPLICATIONS Figure58 below,shows a typicalapplicationwhere theLM8261 isused as a bufferamplifierfortheVCOM signal employed ina TFT LCD flatpanel: Figure58. VCOM DriverApplicationSchematic Figure59 shows the timedomain responseof the amplifierwhen used as a VCOM buffer/driverwithVREF at ground.Inthisapplication,theOp Amp loopwilltryand maintainitsoutputvoltagebased on thevoltageon its non-invertinginput(VREF )despitethecurrentinjectedintotheTFT simulatedload.As longas thisloadcurrentis withintherange tolerableby theLM8261 (45mA sourcingand 65mA sinkingfor±5V supplies),theoutputwill settletoitsfinalvaluewithinlessthan2µs. Copyright© 2000–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 19 ProductFolderLinks:LM8261

SNOS469I –APRIL 2000–REVISED MARCH 2013 www.ti.com Figure59. VCOM driverperformance scope photo OUTPUT SHORT CIRCUIT CURRENT AND DISSIPATION ISSUES The LM8261 outputstageisdesignedformaximum outputcurrentcapability.Even though momentary output shortstogroundand eithersupplycan be toleratedatalloperatingvoltages,longerlastingshortconditionscan cause thejunctiontemperaturetorisebeyond theabsolutemaximum ratingofthedevice,especiallyathigher supplyvoltageconditions.Below supplyvoltageof6V,outputshortcircuitconditioncan be toleratedindefinitely. WiththeOp Amp tiedtoa load,thedevicepower dissipationconsistsofthequiescentpower due tothesupply currentflowintothe device,inadditionto power dissipationdue to the loadcurrent.The loadportionof the power itselfcouldincludean averagevalue(duetoa DC loadcurrent)and an AC component.DC loadcurrent would flowifthereisan outputvoltageoffset,or theoutputAC averagecurrentisnon-zero,or iftheOp Amp operatesin a singlesupplyapplicationwhere the outputis maintainedsomewhere in the range of linear operation.Therefore: PTOTAL = PQ + PDC + PAC PQ = IS ·VS Op Amp QuiescentPower Dissipation PDC = IO ·(VR -VO ) DC Load Power PAC = See Table1 below AC Load Power where: IS:SupplyCurrent VS:TotalSupplyVoltage(V+ -V−) IO :Averageloadcurrent VO :AverageOutputVoltage VR :V+ forsourcingand V− forsinkingcurrent Table 1 below shows the maximum AC component of the loadpower dissipatedby the Op Amp forstandard Sinusoidal,Triangular,and Square Waveforms: Table1.NormalizedAC Power DissipatedintheOutput Stage forStandard Waveforms PAC (W.Ω/V2) Sinusoidal Triangular Square 50.7x 10−3 46.9x 10−3 62.5x 10−3

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www.ti.com SNOS469I –APRIL 2000–REVISED MARCH 2013 The tableentriesare normalizedtoVS 2/R L.To figureouttheAC loadcurrentcomponent ofpower dissipation, simplymultiplythe tableentrycorrespondingto the outputwaveform by the factorVS 2/ R L. For example,with ±15V supplies,a 600Ω load,and triangularwaveform power dissipationintheoutputstageiscalculatedas: Other ApplicationHints The use ofsupplydecouplingismandatoryinmost applications.As withmost relativelyhighspeed/highoutput currentOp Amps, bestresultsare achievedwhen each supplylineisdecoupledwithtwo capacitors;a small valueceramiccapacitor(∼0.01µF) placedveryclosetothesupplyleadinadditiontoa largevalueTantalumor Aluminum (> 4.7µF).The largecapacitorcan be shared by more than one deviceifnecessary.The small ceramiccapacitormaintainslow supplyimpedance athighfrequencieswhilethelargecapacitorwillactas the charge "bucket"forfastloadcurrentspikesat the Op Amp output.The combinationof thesecapacitorswill providesupplydecouplingand willhelpkeep theOp Amp oscillationfreeunderany load. LM8261 ADVANTAGES Compared tootherRail-to-RailInput/Outputdevices,theLM8261 offersseveraladvantagessuch as:

• Improvedcrossoverdistortion.
• Nearlyconstantsupplycurrentthroughouttheoutputvoltageswingrangeand closetoeitherrail.
• Consistentstabilityperformanceforallinput/outputvoltageand currentconditions.
• NearlyconstantUnitygain frequency(fu) and Phase Margin (Phim ) foralloperatingsuppliesand load conditions.
• No outputphase reversalunderinputoverloadcondition. Copyright© 2000–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 21 ProductFolderLinks:LM8261

SNOS469I –APRIL 2000–REVISED MARCH 2013 www.ti.com

REVISION HISTORY

Changes from RevisionH (March 2013)toRevisionI Page

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www.ti.com 1-Nov-2013 Addendum-Page 1 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Drawing Pins Package Qty Eco Plan (2) Lead/Ball Finish (6) MSL Peak Temp (3) Op Temp (°C) Device Marking (4/5) Samples LM8261M5 NRND SOT-23 DBV 5 1000 TBD Call TI Call TI -40 to 85 A45A LM8261M5/NOPB ACTIVE SOT-23 DBV 5 1000 Green (RoHS & no Sb/Br) CU SN Level-1-260C-UNLIM -40 to 85 A45A LM8261M5X NRND SOT-23 DBV 5 3000 TBD Call TI Call TI -40 to 85 A45A LM8261M5X/NOPB ACTIVE SOT-23 DBV 5 3000 Green (RoHS & no Sb/Br) CU SN Level-1-260C-UNLIM -40 to 85 A45A (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability information and additional product content details. TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above. Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material) (3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. (4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device. (5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation of the previous line and the two combined represent the entire Device Marking for that device. (6) Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish value exceeds the maximum column width. Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and

www.ti.com 1-Nov-2013 Addendum-Page 2 continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release. In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.

*All dimensions are nominal Device Package Type Package Drawing Pins SPQ Reel Diameter (mm) Reel Width W1 (mm) (mm) (mm) (mm) (mm) W (mm) Pin1 Quadrant PACKAGE MATERIALS INFORMATION www.ti.com 24-Sep-2013 Pack Materials-Page 1

*All dimensions are nominal Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) LM8261M5 SOT-23 DBV 5 1000 210.0 185.0 35.0 LM8261M5X SOT-23 DBV 5 3000 210.0 185.0 35.0 PACKAGE MATERIALS INFORMATION www.ti.com 24-Sep-2013 Pack Materials-Page 2

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