LM709

LM709 NSC | Alldatasheet

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LM709 Operational Amplifier February 1995 LM709 Operational Amplifier General Description The LM709 series is a monolithic operational amplifier in- tended for general-purpose applications. Operation is com- pletely specified over the range of voltages commonly used for these devices. The design, in addition to providing high gain, minimizes both offset voltage and bias currents. Fur- ther, the class-B output stage gives a large output capability with minimum power drain. External components are used to frequency compensate the amplifier. Although the unity-gain compensation network specified will make the amplifier unconditionally stable in all feedback configurations, compensation can be tailored to optimize high-frequency performance for any gain setting. The LM709C is the commercial-industrial version of the LM709. It is identical to the LM709 except that it is specified for operation from 0 §Ct o a70§C. Connection Diagrams Metal Can Package TL/H/11477–4 Order Number LM709AH, LM709H or LM709CH See NS Package Number H08C Dual-In-Line Package TL/H/11477–6 Order Number LM709CN-8 See NS Package Number N08E Dual-In-Line Package TL/H/11477–5 Order Number LM709CN See NS Package Number N14A C1995 National Semiconductor Corporation RRD-B30M115/Printed in U. S. A.

Absolute Maximum Ratings (Note 3) If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/Distributors for availability and specifications. Supply Voltage LM709/LM709A/LM709C g18V Power Dissipation (Note 1) LM709/LM709A 300 mW LM709C 250 mW Differential Input Voltage LM709/LM709A/LM709C g5V Input Voltage LM709/LM709A/LM709C g10V Output Short-Circuit Duration (T A ea 25§C) LM709/LM709A/LM709C 5 seconds Storage Temperature Range LM709/LM709A/LM709C b65§Ct o a150§C Lead Temperature (Soldering, 10 sec.) LM709/LM709A/LM709C 300 §C Operating Ratings (Note 3) Junction Temperature Range (Note 1) LM709/LM709A b55§Ct o a150§C LM709C 0 §Ct o a100§C Thermal Resistance ( iJA) H Package 150 §C/W, ( iJC)4 5 §C/W 8-Pin N Package 134 §C/W 14-Pin N Package 109 §C/W Electrical Characteristics (Note 2) Parameter Conditions LM709A LM709 LM709C Units Min Typ Max Min Typ Max Min Typ Max Input Bias Current T A e 25§C 100 200 200 500 300 1500 nA Input Offset Current T A e 25§C 10 50 50 200 100 500 nA Input Resistance T A e 25§C 350 700 150 400 50 250 k X Output Resistance T A e 25§C 150 150 150 X Transient Response V IN e 20 mV, C L s 100 pF Overshoot 30 10 30 10 30 % Slew Rate T A e 25§C 0.25 0.25 0.25 V/ ms Input Offset Voltage R S s 10 k X 3.0 6.0 10 mV Average Temperature R S e 50X TA e 25§Ct oT MAX 1.8 10 3.0 6.0 Coefficient of T A e 25§Ct oT MIN 1.8 10 6.0 12 mV/§CInput Offset Voltage R S e 10 k X TA e 25§Ct oT MAX 2.0 15 TA e 25§Ct oT MIN 4.8 25 Large Signal V S e g15V, R L t 2k X 25 70 25 45 70 15 45 V/mVVoltage Gain V OUT e g10V Output Voltage Swing V S e g15V, R L e 10 k X g12 g14 g12 g14 g12 g14 VVS e g15V, R L e 2k X g10 g13 g10 g13 g10 g13 Input Voltage Range V S e g15V g8 g8 g10 g8 g10 V Common-Mode R S s 10 k X 80 110 70 90 65 90 dBRejection Ratio Supply Voltage R S s 10 k X 40 100 25 150 25 200 mV/VRejection Ratio Input Offset Current T A e TMAX 3.5 50 20 200 75 400 nATA e TMIN 40 250 100 500 125 750 Input Resistance T A e TMIN 85 170 40 100 50 250 k X Note 1: For operating at elevated temperatures, the device must be derated based on a 150 §C maximum junction temperature for LM709/LM709A and 100 §C maximum for L709C. For operating at elevated temperatures, the device must be derated based on thermal resistance iJA,T J(MAX) and T A. Note 2: These specifications apply for b55§C s TA s a125§C for the LM709/LM709A and 0 §C s TA s a70§C for the LM709C with the following conditions: g9V s VS s g15V, C1 e 5000 pF, R1 e 1.5 k X,C 2 e 200 pF and R2 e 51X. Note 3: Absolute Maximum Ratings indicate limits which if exceeded may result in damage. Operating Ratings are conditions where the device is expected to be functional but not necessarily within the guaranteed performance limits. For guaranteed specifications and test conditions, see the Electrical Characteristics.

Schematic Diagram TL/H/11477–1 Typical Applications Unity Gain Inverting Amplifier TL/H/11477–2 FET Operational Amplifier TL/H/11477–3 Voltage Follower TL/H/11477–7 *To be used with any capacitive loading on output. **Pin connections shown are for metal can package. ²Should be equal to DC source resistance on input. Offset Balancing Circuit TL/H/11477–8

Guaranteed Performance Characteristics Output Voltage Swing Voltage Range Input Common-Mode Voltage Gain Supply Current TL/H/11477–9

Typical Performance Characteristics Input Offset Current Input Bias Current Supply Current Slew Rate as a Function of Closed-Loop Gain Using Recommended Compensation Networks Various Closed-Loop Gains Frequency Response for as a Function of Frequency Output Voltage Swing Output Voltage Swing Supply Voltage as a Function of Input Bias Current TL/H/11477–10

Physical Dimensions inches (millimeters) Metal Can Package (H) Order Number LM709AH, LM709H or LM709CH 8-Lead Molded Dual-In-Line Package (N) Order Number LM709CN-8

LM709 Operational Amplifier Physical Dimensions inches (millimeters) (Continued) 14-Lead Molded Dual-In-Line Package (N) Order Number LM709CN LIFE SUPPORT POLICY NATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF NATIONAL SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life systems which, (a) are intended for surgical implant support device or system whose failure to perform can into the body, or (b) support or sustain life, and whose be reasonably expected to cause the failure of the life failure to perform, when properly used in accordance support device or system, or to affect its safety or with instructions for use provided in the labeling, can effectiveness. be reasonably expected to result in a significant injury to the user. National Semiconductor National Semiconductor National Semiconductor National Semiconductor Corporation Europe Hong Kong Ltd. Japan Ltd.

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