LM675 TI1 | Alldatasheet
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www.ti.com SNOSBP3E –MAY 1999–REVISED MARCH 2013 LM675PowerOperationalAmplifier Check forSamples: LM675 1FEATURES Connection Diagram 2• 3A CurrentCapability
- A VO Typically90 dB
- 5.5MHz Gain Bandwidth Product
- 8 V/μs Slew Rate
- Wide Power Bandwidth 70 kHz
- 1 mV TypicalOffsetVoltage *The tabisinternallyconnectedtopin3
- ShortCircuitProtection (−VEE )
- Thermal ProtectionwithParoleCircuit(100% Figure1. FrontView Tested) TO-220 Power Package (NDH) See Package Number NDH0005D• 16V–60V Supply Range
- Wide Common Mode Range
- InternalOutput ProtectionDiodes TypicalApplications
- 90 dB RippleRejection
- PlasticPower Package TO-220
APPLICATIONS
- High Performance Power Op Amp
- BridgeAmplifiers
- Motor Speed Controls
- Servo Amplifiers
- InstrumentSystems
DESCRIPTION
The LM675 is a monolithicpower operational amplifierfeaturingwide bandwidth and low input offsetvoltage,making itequallysuitableforAC and DC applications. The LM675 iscapableofdeliveringoutputcurrentsin excessof3 amps, operatingatsupplyvoltagesofup to 60V. The deviceoverloadprotectionconsistsof both internalcurrentlimitingand thermalshutdown. Figure2. Non-InvertingAmplifierThe amplifierisalsointernallycompensated forgains of10 orgreater. Pleasebe aware thatan importantnoticeconcerningavailability,standardwarranty,and use incriticalapplicationsof Texas Instrumentssemiconductorproductsand disclaimerstheretoappearsattheend ofthisdatasheet. 2Alltrademarksarethepropertyoftheirrespectiveowners. PRODUCTION DATA informationiscurrentas ofpublicationdate. Copyright© 1999–2013,Texas InstrumentsIncorporatedProductsconform to specificationsper the terms of the Texas Instrumentsstandardwarranty.Productionprocessingdoes not necessarilyincludetestingofallparameters.
SNOSBP3E –MAY 1999–REVISED MARCH 2013 www.ti.com These deviceshave limitedbuilt-inESD protection.The leadsshouldbe shortedtogetherorthedeviceplacedinconductivefoam duringstorageorhandlingtopreventelectrostaticdamage totheMOS gates. ABSOLUTE MAXIMUM RATINGS (1)(2) SupplyVoltage ±30V InputVoltage −VEE toVCC OperatingTemperature 0°C to+70°C StorageTemperature −65°C to+150°C JunctionTemperature 150°C Power Dissipation(3) 30W Lead Temperature (Soldering,10 seconds) 260°C ESD ratingtobe determined. (1) AbsoluteMaximum Ratingsindicatelimitsbeyond whichdamage tothedevicemay occur.OperatingRatingsindicateconditionsfor whichthedeviceisfunctional,butdo notensurespecificperformancelimits.ElectricalCharacteristicsstateDC and AC electrical specificationsunderparticulartestconditionswhichensurespecificperformancelimits.Thisassumes thatthedeviceiswithinthe OperatingRatings.Specificationsarenotensuredforparameterswhere no limitisgiven,however,thetypicalvalueisa good indication ofdeviceperformance. (2) IfMilitary/Aerospacespecifieddevicesarerequired,pleasecontacttheTexas InstrumentsSalesOffice/Distributorsforavailabilityand specifications. (3) Assumes TA equalto70°C. Foroperationathighertabtemperatures,theLM675 must be deratedbased on a maximum junction temperatureof150°C.
ELECTRICAL CHARACTERISTICS
VS=±25V,TA=25°C unlessotherwisespecified. Parameter Conditions Typical Tested Limit Units SupplyCurrent POUT = 0W 18 50 (max) mA InputOffsetVoltage VCM = 0V 1 10 (max) mV InputBiasCurrent VCM = 0V 0.2 2 (max) μA InputOffsetCurrent VCM = 0V 50 500 (max) nA Open Loop Gain R L = ∞Ω 90 70 (min) dB PSRR ΔVS = ±5V 90 70 (min) dB CMRR VIN = ±20V 90 70 (min) dB OutputVoltageSwing R L = 8Ω ±21 ±18 (min) V OffsetVoltageDriftVersusTemperature R S < 100 kΩ 25 μV/°C OffsetVoltageDriftVersusOutputPower 25 μV/W OutputPower THD = 1%, fO = 1 kHz,R L = 8Ω 25 20 W Gain BandwidthProduct fO = 20 kHz,AVCL = 1000 5.5 MHz Max Slew Rate 8 V/μs InputCommon Mode Range ±22 ±20 (min) V
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www.ti.com SNOSBP3E –MAY 1999–REVISED MARCH 2013 TYPICAL APPLICATIONS VS = ±8V → ±30V Figure3. Generatinga SplitSupply From a SingleSupply Copyright© 1999–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 3 ProductFolderLinks:LM675
SNOSBP3E –MAY 1999–REVISED MARCH 2013 www.ti.com TYPICAL PERFORMANCE CHARACTERISTICS THD vs Power Output InputCommon Mode Range vs Supply Voltage Figure4. Figure5. Supply Currentvs Supply Voltage PSRR vs Frequency Figure6. Figure7. Device Dissipationvs Ambient Temperature† CurrentLimitvs Output Voltage* †θ INTERFACE = 1° C/W *VS = ±25V See APPLICATION HINTS . Figure8. Figure9.
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www.ti.com SNOSBP3E –MAY 1999–REVISED MARCH 2013 TYPICAL PERFORMANCE CHARACTERISTICS (continued) IB vs Supply Voltage Output VoltageSwing vs Supply Voltage Figure10. Figure11. Copyright© 1999–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 5 ProductFolderLinks:LM675
SNOSBP3E –MAY 1999–REVISED MARCH 2013 www.ti.com SCHEMATIC DIAGRAM
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www.ti.com SNOSBP3E –MAY 1999–REVISED MARCH 2013 APPLICATION HINTS STABILITY The LM675 isdesignedtobe stablewhen operatedata closed-loopgainof10 orgreater,but,as withany other high-currentamplifier,the LM675 can be made to oscillateunder certainconditions.These usuallyinvolve printedcircuitboardlayoutoroutput/inputcoupling. When designinga printedcircuitboardlayout,itisimportanttoreturntheloadground,theoutputcompensation ground,and thelow level(feedbackand input)groundstothecircuitboardgroundpointthroughseparatepaths. Otherwise,largecurrentsflowingalonga ground conductorwillgeneratevoltageson theconductorwhich can effectivelyactas signalsattheinput,resultinginhighfrequencyoscillationorexcessivedistortion.Itisadvisable tokeep theoutputcompensationcomponents and the0.1μF supplydecouplingcapacitorsas closeas possible totheLM675 toreducetheeffectsofPCB traceresistanceand inductance.For thesame reason,theground returnpathsforthesecomponents shouldbe as shortas possible. Occasionally,currentinthe outputleads(whichfunctionas antennas)can be coupledthroughthe airto the amplifierinput,resultinginhigh-frequencyoscillation.Thisnormallyhappens when thesourceimpedance ishigh ortheinputleadsarelong.The problemcan be eliminatedby placinga smallcapacitor(ontheorderof50 pF to 500 pF)acrossthecircuitinput. Most power amplifiersdo notdrivehighlycapacitiveloadswell,and theLM675 isno exception.Iftheoutputof theLM675 isconnecteddirectlytoa capacitorwithno seriesresistance,thesquarewave responsewillexhibit ringingifthecapacitanceisgreaterthanabout0.1μF.The amplifiercan typicallydriveloadcapacitancesup to2 μF or so withoutoscillating,butthisisnotrecommended. Ifhighlycapacitiveloadsare expected,a resistor(at least1Ω) shouldbe placedinserieswiththe outputof the LM675. A method commonly employed to protect amplifiersfromlowimpedancesathighfrequenciesistocoupletotheloadthrougha 10Ω resistorinparallelwith a 5 μH inductor. CURRENT LIMITAND SAFE OPERATING AREA (SOA) PROTECTION A power amplifier'soutputtransistorscan be damaged by excessiveappliedvoltage,currentflow,or power dissipation.The voltageappliedtotheamplifierislimitedby thedesignoftheexternalpower supply,whilethe maximum currentpassed by theoutputdevicesisusuallylimitedby internalcircuitrytosome fixedvalue.Short- termpower dissipationisusuallynotlimitedinmonolithicoperationalpower amplifiers,and thiscan be a problem when drivingreactiveloads,whichmay draw largecurrentswhilehighvoltagesappearon theoutputtransistors. The LM675 notonlylimitscurrenttoaround 4A, butalsoreducesthevalueofthelimitcurrentwhen an output transistorhas a highvoltageacrossit. When drivingnonlinearreactiveloadssuch as motorsor loudspeakerswithbuilt-inprotectionrelays,thereisa possibilitythatan amplifieroutputwillbe connectedto a loadwhose terminalvoltagemay attemptto swing beyond thepower supplyvoltagesappliedtotheamplifier.Thiscan cause degradationoftheoutputtransistors orcatastrophicfailureofthewhole circuit.The standardprotectionforthistypeoffailuremechanism isa pairof diodesconnectedbetween theoutputoftheamplifierand thesupplyrails.These arepartoftheinternalcircuitry oftheLM675, and needn'tbe added externallywhen standardreactiveloadsaredriven. THERMAL PROTECTION The LM675 has a sophisticatedthermalprotectionscheme to preventlong-termthermalstressto the device. When thetemperatureon thediereaches170°C, theLM675 shutsdown. Itstartsoperatingagainwhen thedie temperaturedropstoabout145°C, butifthetemperatureagainbeginstorise,shutdownwilloccuratonly150°C. Therefore,thedeviceisallowedtoheatup toa relativelyhightemperatureifthefaultconditionistemporary,but a sustainedfaultwilllimitthe maximum dietemperatureto a lowervalue.Thisgreatlyreducesthe stresses imposed on theIC by thermalcycling,whichinturnimprovesitsreliabilityundersustainedfaultconditions.This circuitryis100% testedwithouta heatsink. Sincethedietemperatureisdirectlydependentupon theheatsink,theheatsinkshouldbe chosen forthermal resistancelow enough thatthermalshutdown willnotbe reachedduringnormaloperaton.Using thebestheat sinkpossiblewithinthe costand space constraintsof the system willimprovethe long-termreliabilityof any power semiconductor. Copyright© 1999–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 7 ProductFolderLinks:LM675
SNOSBP3E –MAY 1999–REVISED MARCH 2013 www.ti.com POWER DISSIPATION AND HEAT SINKING The LM675 shouldalwaysbe operatedwitha heatsink,even thoughatidleworstcase power dissipationwillbe only1.8W (30mA × 60V) whichcorrespondstoa riseindietemperatureof97°C above ambientassuming θjA = 54°C/W fora TO-220 package.Thisinitselfwillnot cause the thermalprotectioncircuitryto shutdown the amplifierwhen operatingat room temperature,but a mere 0.9W of additionalpower dissipationwillshutthe amplifierdown sinceTJ willthenincreasefrom122°C (97°C + 25°C) to170°C. Inordertodeterminetheappropriateheatsinkfora givenapplication,thepower dissipationoftheLM675 inthat applicationmust be known. When theloadisresistive,themaximum averagepower thattheIC willbe required todissipateisapproximately: where
- VS isthetotalpower supplyvoltageacrosstheLM675
- R L istheloadresistance
- PQ isthequiescentpower dissipationoftheamplifier The above equationisonlyan approximationwhichassumes an “ideal”classB outputstageand constantpower dissipationinallotherpartsofthecircuit.As an example,iftheLM675 isoperatedon a 50V power supplywitha resistiveloadof8Ω,itcan developup to19W ofinternalpower dissipation.Ifthedietemperatureistoremain below 150°C forambienttemperaturesup to70°C, thetotaljunction-to-ambientthermalresistancemust be less than Using θJC = 2°C/W, thesum ofthecase-to-heatsinkinterfacethermalresistanceand theheat-sink-to-ambient thermalresistancemust be lessthan2.2°C/W. The case-to-heat-sinkthermalresistanceoftheTO-220 package varieswiththemountingmethod used.A metal-to-metalinterfacewillbe about1°C/W iflubricated,and about 1.2°C/W ifdry.Ifa mica insulatorisused,thethermalresistancewillbe about1.6°C/W lubricatedand 3.4°C/W dry.For thisexample,we assume a lubricatedmica insulatorbetween theLM675 and theheatsink.The heat sinkthermalresistancemust thenbe lessthan Thisisa ratherlargeheatsinkand may notbe practicalinsome applications.Ifa smallerheatsinkisrequired forreasonsof sizeor cost,thereare two alternatives.The maximum ambientoperatingtemperaturecan be restrictedto50°C (122°F),resultingina 1.6°C/W heatsink,ortheheatsinkcan be isolatedfromthechassisso themica washer isnotneeded.Thiswillchange therequiredheatsinktoa 1.2°C/W unitifthecase-to-heat-sink interfaceislubricated. The thermalrequirementscan become more difficultwhen an amplifierisdrivinga reactiveload.For a given magnitudeofloadimpedance,a higherdegreeofreactancewillcause a higherlevelofpower dissipationwithin theamplifier.As a generalrule,thepower dissipationofan amplifierdrivinga 60° reactiveloadwillbe roughly thatofthesame amplifierdrivingtheresistivepartofthatload.For example,some reactiveloadsmay atsome frequencyhave an impedance witha magnitudeof8Ω and a phase angleof60°.The realpartofthisloadwill thenbe 8Ω × cos 60° or4Ω,and theamplifierpower dissipationwillroughlyfollowthecurveofpower dissipation witha 4Ω load.
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www.ti.com SNOSBP3E –MAY 1999–REVISED MARCH 2013 TypicalApplications Figure12. Non-InvertingUnityGain Operation Figure13. InvertingUnityGain Operation Copyright© 1999–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 9 ProductFolderLinks:LM675
SNOSBP3E –MAY 1999–REVISED MARCH 2013 www.ti.com Figure14. Servo Motor Control IOUT = VIN × 2.5amps/volt i.e.IOUT = 1A when VIN = 400 mV Trimpotformax R OUT Figure15. High CurrentSource/Sink
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REVISION HISTORY
Changes from RevisionD (March 2013)toRevisionE Page Copyright© 1999–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 11 ProductFolderLinks:LM675
www.ti.com 11-Apr-2013 Addendum-Page 1 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Drawing Pins Package Qty Eco Plan (2) Lead/Ball Finish MSL Peak Temp (3) Op Temp (°C) Top-Side Markings (4) Samples LM675T ACTIVE TO-220 NDH 5 45 TBD Call TI Call TI 0 to 70 LM675T LM675T/LF02 ACTIVE TO-220 NEB 5 45 Green (RoHS & no Sb/Br) CU SN Level-1-NA-UNLIM LM675T LM675T/LF05 ACTIVE TO-220 NEB 5 45 Green (RoHS & no Sb/Br) CU SN Level-1-NA-UNLIM LM675T LM675T/NOPB ACTIVE TO-220 NDH 5 45 Green (RoHS & no Sb/Br) CU SN Level-1-NA-UNLIM 0 to 70 LM675T (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability information and additional product content details. TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above. Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material) (3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. (4) Multiple Top-Side Markings will be inside parentheses. Only one Top-Side Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation of the previous line and the two combined represent the entire Top-Side Marking for that device. Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release. In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
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