LM66100DCKT | DigiCamel IC Datasheet

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ADVANCE□INFORMATION Product Folder Order Now T echnical Documents Tools & Software Support & Community An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. ADVANCE INFORMATION for pre-production products; subject to change without notice. LM66100 SLVSEZ8 –MARCH 2019 LM661005.5-V,1.5-A,79-mΩ,LowIQidealdiodewithinputpolarityprotection

1 Features

1• Wide operating voltage range: 1.5 V – 5.5 V

Reverse voltage standoff on VIN: –6-V absolute maximum
Maximum continuous current (IMAX): 1.5 A
On-Resistance (RON): – 5-V VIN = 79-mΩ (typical) – 3.3-V VIN = 91-mΩ (typical) – 1.8-V VIN = 159-mΩ (typical)
Comparator chip enable (CE)
Channel status indication (ST)
Low current consumption: – Shutdown current (ISD,VIN): 120-nA (typical) – Quiescent current (IQ, VIN): 150-nA (typical)

2 Applications

Smart meters
Building automation
GPS and tracking
Primary and backup batteries

3 Description

The LM66100 is a Single-Input, Single-Output (SISO) integrated ideal diode that is well suited for a variety of applications. The device contains a P-channel MOSFET that can operate over an input voltage range of 1.5 V to 5.5 V and can support a maximum continuous current of 1.5 A. The chip enable works by comparing the CE pin voltage to the input voltage. When the CE pin voltage is higher than VIN, the device is disabled and the MOSFET is off. When the CE pin voltage is lower, the MOSFET is on. The LM66100 also comes with reverse voltage protection (RVP) that can protect the device from a miswired input, such as a reversed battery. Two LM66100 devices can be used in an ORing configuration similar to a dual diode ORing implementation. These devices can compare input and output voltages to make sure that reverse current is blocked through an internal voltage comparator. The LM66100 is available in a standard SC-70 package characterized for operation over a temperature range of –40°C to 125°C. Device Information(1) PART NUMBER PACKAGE BODY SIZE (NOM) LM66100DCK SC-70 (6) 2.1 mm x 2.0 mm (1) For all available packages, see the orderable addendum at the end of the data sheet. Typical Application

12.1 Receiving Notification of Documentation Updates 13

13 Mechanical, Packaging, and Orderable

4 Revision History

March 2019 * Initial release.

5 Pin Configuration and Functions

6 Pin SC-70

NO. NAME

1 VIN I Device input

2 GND - Device ground

3 CE I Active-low chip enable. Can be connected to VOUT for reverse current protection. Do not leave floating. 4 N/C - Not internally connected, can be tied to GND or left floating. 5 ST O Active-low open-drain output, pulled low when the chip is disabled. Hi-Z when the chip is enabled. Connect to GND if not required.

6 VOUT O Device output

ADVANCE□INFORMATION LM66100 SLVSEZ8 –MARCH 2019 www.ti.com Product Folder Links: LM66100 Submit Documentation Feedback Copyright © 2019, Texas Instruments Incorporated (1) Stresses beyond those listed under Absolute Maximum Rating may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Condition. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1) MIN MAX UNIT VIN Maximum Input Voltage Range –6 6 V VOUT Maximum Output Voltage Range –0.3 6 V ISW, MAX Maximum Continuous Switch Current 1.5 A ISW, PLS Maximum Pulsed Switch Current (≤1 ms, 2% Duty Cycle) 2.5 A ID, PLS Maximum Pulsed Body Diode Current (≤0.1 ms, 0.2% Duty Cycle) 2.5 A ICE Maximum CE Pin Current –1 mA IST Maximum ST Pin Current –1 1 mA TJ Junction temperature –40 125 °C TSTG Storage temperature –65 150 °C TLEAD Maximum Lead Temperature (10 s soldering time) 300 °C (1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. (2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. Manufacturing with less is possible with the necessary precautions. Pins listed may actually have higher performance.

6.2 ESD Ratings

V(ESD) Electrostatic discharge Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, allpins(1) ±2000 V Charged device model (CDM), per JEDEC specificationJESD22-C101, all pins(2) ±500

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted) MIN TYP MAX UNIT VIN Input Voltage Range 1.5 5.5 V VOUT Output Voltage Range 1 5.5 V VCE CE Pin Voltage Range 0 5.5 V VST ST Pin Voltage Range 0 5.5 V (1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report. (2) Preliminary Estimates Subject to Change

6.4 Thermal Information

THERMAL METRIC(1)(2) LM66100 UNITDCK (SC-70)

6 PINS

RθJA Junction-to-ambient thermal resistance 200 °C/W RθJC(top) Junction-to-case (top) thermal resistance TBD °C/W RθJB Junction-to-board thermal resistance TBD °C/W ΨJT Junction-to-top characterization parameter TBD °C/W ΨJB Junction-to-board characterization parameter TBD °C/W RθJC(bot) Junction-to-case (bottom) thermal resistance TBD °C/W

6.5 Electrical Characteristics

over operating free-air temperature range (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT Input Supply (VIN) ISD,VIN VIN Shutdown Current VOUT = VIN VCE > VIN + 80mV IOUT = 0 A (VOUT = open) 25°C 0.12 0.3 µA -40°C to 105°C 0.3 µA IQ,VIN VIN Quiescent Current VOUT = VIN VCE < VIN - 250mV IOUT = 0 A (VOUT = open) 25°C 0.15 0.5 µA -40°C to 105°C 0.5 µA IOUT, OFF OUT to IN Leakage Current (Current out of VIN) VOUT - VIN ≤ 5.5 V VCE > VIN + 80mV 25°C 0.2 0.5 µA -40°C to 85°C 2.7 µA -40°C to 105°C 8 µA VOUT - VIN ≤ 4.5 V VCE > VIN + 80mV -40°C to 85°C 1.7 µA -40°C to 105°C 5.1 µA VOUT - VIN ≤ 1.0 V VCE > VIN + 80mV -40°C to 85°C 0.7 µA -40°C to 105°C 2.1 µA ON-Resistance (RON) RON ON-State Resistance IOUT = -200 mA VIN = 5 V 25°C 79 125 mΩ-40°C to 85°C 150 -40°C to 125°C 200 RON ON-State Resistance IOUT = -200 mA VIN = 3.6 V 25°C 91 150 mΩ-40°C to 85°C 200 -40°C to 125°C 250 RON ON-State Resistance IOUT = -200 mA VIN = 1.8 V 25°C 159 200 mΩ-40°C to 85°C 250 -40°C to 125°C 300 Comparator Chip Enable (CE) VON Turn ON Threshold VCE - VIN -40°C to 125°C –250 –150 –80 mV VOFF Turn OFF Threshold VCE - VIN -40°C to 125°C 0 35 80 mV ICE CE Pin Leakage Current VCE > VIN + 80mV -40°C to 125°C 0 400 650 nA Reverse Current Blocking (RCB) and Body Diode Characteristics IRCB Reverse Activation Current VCE = VOUT -40°C to 125°C 0.5 1 A VFWD Body Diode Forward Voltage IOUT = 10 mA VCE > VIN + 80mV -40°C to 125°C 0.1 0.5 1.1 V Status Indication (ST) VOL, ST Output Low Voltage IST = 1 mA -40°C to 125°C 0.2 V tST Status Delay Time VCE transitions from low to high -40°C to 125°C 1 µs IST ST Pin Leakage Current VCE < VIN - 250mV -40°C to 125°C –100 100 nA

6.6 Switching Characteristics

Unless otherwise noted, the typical characteristics in the following table applies over the entire recommended operating voltage at an ambient temperature of 25°C and a load of CL = 1 µF and RL = 1kΩ PARAMETER TEST CONDITIONS MIN TYP MAX UNIT tON Turn ON Time VIN = 1.5 V 120 µs VIN = 3.3 V 50 µs VIN = 5 V 30 µs tOFF Turn OFF Time VIN = 1.5 V 7 µs VIN = 3.3 V 9 µs VIN = 5 V 5 µs

(1) See the Timing Application section for information on how RL and L affect Fall Time.

7 Parameter Measurement Information

Figure 2. Timing Diagram

8 Detailed Description

8.1 Overview

5.5 V and can support a maximum continuous current of 1.5 A. than VIN, the device is disabled and the MOSFET is off. When the CE pin voltage is lower, the MOSFET is on. input, such as a reversed battery.

8.2 Functional Block Diagram

Figure 3. LM66100 Block Diagram

8.3 Feature Description

8.3.1 Reverse Polarity Protection (RPP)

respect to GND see Figure 4. Figure 4. RPP Protection Circuit

8.3.2 Always-ON Reverse Current Blocking (RCB)

By connecting the CE pin to VOUT, this allows the comparator to detect reverse current flow through the switch. IRCB within tOFF. Once the output falls to below VIN by VON, the device will quickly turn back on. Figure 5. RCB Circuit Figure 6. RCB Waveforms

8.4 Device Functional Modes

Table 1. Device Functional Modes

9 Application and Implementation

validate and test their design implementation to confirm system functionality.

9.1 Application Information

The LM66100 Ideal Diode can be used in a variety of stand-alone and multi-channel applications.

9.2 Typical Applications

9.2.1 Dual Ideal Diode ORing

Two LM66100 Ideal Diodes can be used together for ORing between two power supplies. Figure 7. Dual Ideal Diode ORing

9.2.1.1 Design Requirements

9.2.1.2 Detailed Design Procedure

9.2.1.3 Application Curves

powers VOUT because it is a higher voltage. When VIN2 is removed, VOUT is once again powered by VIN1. Figure 8. Dual Ideal Diode ORing Behavior

9.2.2 Dual Ideal Diode ORing for Continuous Output Power

Figure 9. Dual Ideal Diode ORing for Continuous Output Power

9.2.2.1 Design Requirements

current into the CE pin during a negative voltage event. Figure 10 shows the expected behavior of the above circuit.

Figure 10. Dual Ideal Diode ORing for Continuous Output Power Behavior

10 Power Supply Recommendations

11 Layout

11.1 Layout Guidelines

on normal operation. Using wide traces for VIN, VOUT and GND helps minimizr the parasitic electrical effects.

11.2 Layout Example

Figure 11. LM66100 Layout Example

12 Device and Documentation Support

12.1 Receiving Notification of Documentation Updates

To receive notification of documentation updates, navigate to the device product folder on ti.com. In the upper right corner, click on Alert me to register and receive a weekly digest of any product information that has changed. For change details, review the revision history included in any revised document.

12.2 Community Resources

The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of Use. TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help solve problems with fellow engineers. Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and contact information for technical support.

12.3 Trademarks

E2E is a trademark of Texas Instruments.

12.4 Electrostatic Discharge Caution

This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.

12.5 Glossary

SLYZ022 — TI Glossary. This glossary lists and explains terms, acronyms, and definitions.

13 Mechanical, Packaging, and Orderable Information

The following pages include mechanical, packaging, and orderable information. This information is the most current data available for the designated devices. This data is subject to change without notice and revision of this document. For browser-based versions of this data sheet, refer to the left-hand navigation.

www.ti.com 30-Mar-2019 Addendum-Page 1 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Drawing Pins Package Qty Eco Plan (2) Lead/Ball Finish (6) MSL Peak Temp (3) Op Temp (°C) Device Marking (4/5) Samples LM66100DCKR PREVIEW SC70 DCK 6 3000 TBD Call TI Call TI -40 to 105 LM66100DCKT PREVIEW SC70 DCK 6 250 TBD Call TI Call TI -40 to 105 PLM66100DCKR ACTIVE SC70 DCK 6 3000 TBD Call TI Call TI -40 to 105 (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may reference these types of products as "Pb-Free". RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption. Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based flame retardants must also meet the <=1000ppm threshold requirement. (3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. (4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device. (5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation of the previous line and the two combined represent the entire Device Marking for that device. (6) Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish value exceeds the maximum column width. Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release. In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.

IMPORTANT NOTICE AND DISCLAIMER TI PROVIDES TECHNICAL AND RELIABILITY DATA (INCLUDING DATASHEETS), DESIGN RESOURCES (INCLUDING REFERENCE DESIGNS), APPLICATION OR OTHER DESIGN ADVICE, WEB TOOLS, SAFETY INFORMATION, AND OTHER RESOURCES “AS IS” AND WITH ALL FAULTS, AND DISCLAIMS ALL WARRANTIES, EXPRESS AND IMPLIED, INCLUDING WITHOUT LIMITATION ANY IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE OR NON-INFRINGEMENT OF THIRD PARTY INTELLECTUAL PROPERTY RIGHTS. These resources are intended for skilled developers designing with TI products. You are solely responsible for (1) selecting the appropriate TI products for your application, (2) designing, validating and testing your application, and (3) ensuring your application meets applicable standards, and any other safety, security, or other requirements. These resources are subject to change without notice. TI grants you permission to use these resources only for development of an application that uses the TI products described in the resource. Other reproduction and display of these resources is prohibited. No license is granted to any other TI intellectual property right or to any third party intellectual property right. TI disclaims responsibility for, and you will fully indemnify TI and its representatives against, any claims, damages, costs, losses, and liabilities arising out of your use of these resources. TI’s products are provided subject to TI’s Terms of Sale (www.ti.com/legal/termsofsale.html) or other applicable terms available either on ti.com or provided in conjunction with such TI products. TI’s provision of these resources does not expand or otherwise alter TI’s applicable warranties or warranty disclaimers for TI products. Mailing Address: Texas Instruments, Post Office Box 655303, Dallas, Texas 75265 Copyright © 2019, Texas Instruments Incorporated

Product Information

LM66100DCKT specifications and overview.

Summary

5.5-V, 1.5-A, 79-m(ohm), Low IQ ideal diode with input polarity protection

Description

5.5-V, 1.5-A, 79-m(ohm), Low IQ ideal diode with input polarity protection

Source title LM66100DCKT Datasheet(PDF) - Texas Instruments

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