LM6313

LM6313 NSC | Alldatasheet

Document overview

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Technical content

Features

Y High slew rate 250 V/ ms Y Wide bandwidth 35 MHz Y Peak output current g300 mA Y Input and output stages pinned out separately Y Single or dual supply operation Y Thermal protection Y Error flag warns of faults Y Wide supply voltage range g5V to g15V

Applications

Y High speed ATE pin driver Y Data acquisition Y Driving capacitive loads Y Flash A-D input driver Y Precision 50 X –75 X video line driver Y Laser diode driver Connection Diagram Dual-In-Line Package TL/H/10521–1 Top View Order Number LM6313N See NS Package Number N16A *Heat sink pins See Note 5 and Applications. **Do not ground or otherwise connect to this pin. Typical Application TL/H/10521–2 VIPTM is a trademark of National Semiconductor Corporation. C1995 National Semiconductor Corporation RRD-B30M75/Printed in U. S. A.

Absolute Maximum Ratings (Note 1) Total Supply Voltage ( aVS to bVS) 36V ( g18) A1 Differential Input Voltage (Note 2) g7V A1 Input Voltage (V a b0.7) to (V b b7V) A2 Input to Output Voltage g7V A2 Input Voltage gVS Flag Output Voltage GND to aVS Short-Circuit to Ground (Note 3) Storage Temperature Range b65§C s T s a150§C Lead Temperature (Soldering, 5 seconds) 260 §C ESD Tolerance (Note 4) Pins 10 and 11 g600V All Other Pins g1500V Operating Temperature Range LM6313N 0 §Ct o7 0 §C Thermal Derating Information (Note 5) iJA 40§C/W TJ (Max) 125 §C Operational Amplifier DC Electrical Characteristics Unless otherwise specified, all limits guaranteed for T A e 25§C, and Supply Voltage V S e g15V. Boldface limits apply at temperature extremes. V CM e 0V, RS e 50X, the circuit configured as in Figure 1 . Symbol Parameter Conditions Typical 25§C0 §Ct o7 0 §C UnitsLimit Limit VOS Input Offset Voltage 5 20 22 mV (Max) DVOS/DT Average Input Offset 10 mV/§CVoltage Drift Ib Input Bias Current 2 5 7 mA (Max) IOS Input Offset Current 0.15 1.5 1.9 mA (Max) DIOS/DT Average Input Offset 0.4 nA/ §CCurrent Drift RIN Input Resistance Differential 325 k X CIN Input Capacitance A V ea 1, f e 10 MHz 2.2 pF AV1 Voltage Gain 1 R L e 1k X,V O e g10V 6000 2500 2000 V/V (Min)AV2 Voltage Gain 2 R L e 50X,V O e g8V 5000 2000 1500 CMRR Common-Mode b10V s VCM s a10V 90 72 70 dB (Min)Rejection Ratio PSRR Power Supply g5V s VS s g16V 90 72 70 dB (Min)Rejection Ratio VO1 Output Voltage Swing 1 R L e 1k X 13.1 11.8 11.2 VO2 Output Voltage Swing 2 R L e 100X 12.0 10.5 10.0 gV (Min) VO3 Output Voltage Swing 3 R L e 50X 11.0 9.0 8.5 IS Supply Current T J e 0§C 24 TJ e 25§C 18 23 mA (Max) TJ e 125§C 21 ISC Peak Short-Circuit Output (See Figure 3 ) 300 mA TL/H/10521–3 FIGURE 1

Electrical Characteristics (Continued) Operational Amplifier AC Electrical Characteristics Unless otherwise specified, all limits guaranteed for T A e 25§C, and Supply Voltage V S e g15V. Boldface limits apply at temperature extremes. V CM e 0V, RS e 50X, the circuit configured as in Figure 1 . Symbol Parameter Conditions Typical Units GBW Gain-Bandwidth Product @ f e 30 MHz 35 MHz SR Slew Rate A V eb 1, R L e 50X (Note 6) 250 V/ ms PBW Power Bandwidth V OUT e 20 V PP 3.0 MHz tS Settling Time 10V Step to 0.1% (See Figure 2 ) 200 ns Phase Margin A V eb 1, R L e 1k X,C L e 50 pF 53 Deg Differential Gain 0.1 % Differential Phase 0.1 Deg en Input Noise Voltage f e 10 kHz 14 nV/ SHz in Input Noise Current f e 10 kHz 1.8 pA/ SHz Supply Voltage V S e g15V. Boldface limits apply at temperature extremes. V CM e 0V, R S e 50X. Symbol Parameter Conditions Typical 25§C0 §Ct o7 0 §C UnitsLimit Limit AVOL Large Signal Voltage Gain V OUT e g10V, R L e 2k X 650 300 250 V/V (Min)VOUT e g10V, R L e % 6000 2500 2000 CMRR Common-Mode b10V s VCM s a10V 90 72 70 dB (Min)Rejection Ratio PSRR Power Supply g5V s gVS s a16V 90 72 70 dB (Min)Rejection Ratio ISC Output Short g60 g30 g25 mA (Min)Circuit Current Supply Voltage V S e g15V. Boldface limits apply at temperature extremes. R S e 50X. Symbol Parameter Conditions Typical 25§C Units Limit GBW Gain-Bandwidth f e 30 MHz 37 25 MHz (Min) SR Slew Rate A V ea 1, R L e 100 k X, g4V IN, 250 150 V/ ms (Min)g2V OUT Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. For guaranteed specifications and test conditions, see the Electrical Characteristics. The guaranteed specifications apply only for the test condition listed. Some performance characteristics may degrade when the device is not operated under the listed test conditions. Note 2: In order to achieve optimum AC performance, the input stage was designed without protective clamps. Exceeding the maximum differential input voltage results in reverse breakdown of the base-emitter junction of one of the input transistors. Degradation of the input parameters (especially V OS,I OS, and Noise) is proportional to the level of the externally limited breakdown current and the accumulated duration of the breakdown condition. Note 3: Continuous short-circuit operation of A1 at elevated temperature can result in exceeding the maximum allowed junction temperature of 125 §C. A2 contains current limit and thermal shutdown to protect against fault conditions. The device may be damaged by shorts to the supplies. Note 4: Human body model, C e 100 pF, R S e 1500X.

Electrical Characteristics (Continued) Supply Voltage V S e g15V. Boldface limits apply at temperature extremes. R S e 50X. Symbol Parameter Conditions Typical 25§C0 §Ct o7 0 §C UnitsLimit Limit AV1 Voltage Gain 1 R L e 1k X,V IN e g10V 0.99 0.97 0.95 V/mV (Min) AV2 Voltage Gain 2 R L e 50X,V IN e g10V 0.9 0.85 0.82 V/V (Min) VOS Offset Voltage R L e 1k X 15 70 100 mV (Max) Ib Input Bias Current R L e 1k X,R S e 10 k X 16 8 mA (Max) RIN Input Resistance R L e 50X 5M X CIN Input Capacitance 3.5 pF RO Output Resistance I OUT e g10 mA 3.5 5.0 8.0 X (Min) VO Voltage Output Swing R L e 1k X 13.7 13.0 12.7 RL e 100X 12.5 10.5 10.0 V (Min) RL e 50X 11.0 9.0 8.5 PSRR Power Supply V S e g5V to g16V 70 60 50 dB (Min)Rejection Ratio Supply Voltage V S e g15V. Boldface limits apply at temperature extremes. R S e 50X. Symbol Parameter Conditions Typical 25§C UnitsLimit SR 1 Slew Rate 1 V IN e g11V, R L e 1k X 1200 V/ms (Min)SR 2 Slew Rate 2 V IN e g11V, R L e 50X (Note 7) 750 550 BW b3 dB Bandwidth V IN e g100 mVpp 65 30 MHz (Min)RL e 50X,C L s 10 pF tr, Rise Time R L e 1k X,C L s 10 pF 8n stf Fall Time V O e 100 mVpp PD Propagation Delay R L e 50X,C L s 10 pF 4n sVO e 100 mVpp Overshoot R L e 1k X,C L e 100 pF 13 %RL e 50X,C L e 1000 pF 21 Additional (A2) Electrical Characteristics Unless otherwise specified, all limits guaranteed for TA e 25§C, and Supply Voltage V S e g15V. Boldface limits apply at temperature extremes. Symbol Parameter Conditions Typical 25§C0 §Ct o7 0 §C UnitsLimit Limit VOL Flag Pin Output I SINK Flag Pin e 500 mA 220 340 400 mV (Max)Low Voltage IOH Flag Pin Output V OH Flag Pin e 15V (Note 8) 0.01 10 20 mA (Max)High Current Note 5: For operation at elevated temperature, these devices must be derated to insure T J s 125§C. T J e TA a (PD c iJA). iJA for the N package mounted flush to the PCB, is 40 §C/W when pins 4, 5, 12 and 13 are soldered to a total of 2 in 2 of copper trace. Note 6: Measured between g5V. Note 7: VIN e g9V step input, measured between g5V out. Note 8: The error flag is set during current limit or thermal shut-down. The flag is an open collector, low on fault.

Typical Performance Characteristics Op Amp (Unless otherwise specified, T A e 25§C, V S e g15V, and R L e 10 k X.) Capacitive Load Slew Rate vs Bode Plot (Open Loop) Output Resistance Common-Mode Voltage Bias Current vs Supply Voltage Supply Current vs Power Supply Rejection Input Noise Voltage Input Noise Current Compensation Slew Rate vs and Load Cap Margin vs Comp Cap Gain-Bandwidth, Phase CMR vs Frequency vs Comp Cap GBW and Phase Margin TL/H/10521–8

Typical Performance Characteristics A1 Only (Unless otherwise specified, T A e 25§C, V S e g15V, and R L e 10 k X.) Gain vs Supply Voltage Bode Plot Load Capacity Phase Margin vs Gain-Bandwidth and Output Saturation Voltage Saturation Voltage Common-Mode Input (Open Loop) Output Resistance TL/H/10521–9 Typical Performance Characteristics A2 Only (Unless otherwise specified, T A e 25§C and V S e g15V.) Supply Voltage Slew Rate vs Input Amplitude Slew Rate vs Temperature Slew Rate vs Supply Voltage Bandwidth vs Capacitive Load Overshoot vs Shift (R L e 50X) Gain and Phase TL/H/10521–10

LM6313 High Speed, High Power Operational Amplifier Physical Dimensions inches (millimeters) Lit. Ý 108290 16-Lead Molded Dual-In-Line Package (N) Order Number LM6313N LIFE SUPPORT POLICY NATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF NATIONAL SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life systems which, (a) are intended for surgical implant support device or system whose failure to perform can into the body, or (b) support or sustain life, and whose be reasonably expected to cause the failure of the life failure to perform, when properly used in accordance support device or system, or to affect its safety or with instructions for use provided in the labeling, can effectiveness. be reasonably expected to result in a significant injury to the user. National Semiconductor National Semiconductor National Semiconductor National Semiconductor National Semiconductores National Semiconductor Corporation GmbH Japan Ltd. Hong Kong Ltd. Do Brazil Ltda. (Australia) Pty, Ltd. 2900 Semiconductor Drive Livry-Gargan-Str. 10 Sumitomo Chemical 13th Floor, Straight Block, Rue Deputado Lacorda Franco Building 16 P.O. Box 58090 D-82256 F 4urstenfeldbruck Engineering Center Ocean Centre, 5 Canton Rd. 120-3A Business Park Drive Santa Clara, CA 95052-8090 Germany Bldg. 7F Tsimshatsui, Kowloon Sao Paulo-SP Monash Business Park Tel: 1(800) 272-9959 Tel: (81-41) 35-0 1-7-1, Nakase, Mihama-Ku Hong Kong Brazil 05418-000 Nottinghill, Melbourne TWX: (910) 339-9240 Telex: 527649 Chiba-City, Tel: (852) 2737-1600 Tel: (55-11) 212-5066 Victoria 3168 Australia Fax: (81-41) 35-1 Ciba Prefecture 261 Fax: (852) 2736-9960 Telex: 391-1131931 NSBR BR Tel: (3) 558-9999 Tel: (043) 299-2300 Fax: (55-11) 212-1181 Fax: (3) 558-9998 Fax: (043) 299-2500 National does not assume any responsibility for use of any circuitry described, no circuit patent licenses are implied and National reserves the right at any time without notice to change said circuitry and specifications.