LM614

LM614 TI1 | Alldatasheet

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www.ti.com SNOSC21C –MAY 1998–REVISED MARCH 2013 LM614QuadOperationalAmplifierandAdjustableReference Check forSamples: LM614 1FEATURES DESCRIPTION The LM614 consists of four op-amps and a23Op Amp programmablevoltagereferenceina 16-pinpackage.• Low OperatingCurrent:450μA The op-amp out-performsmost single-supplyop-

• Wide Supply VoltageRange: 4V to36V amps by providinghigherspeed and bandwidthalong withlow supplycurrent.Thisdevicewas specifically• Wide Common-Mode Range: V − to(V+− 1.8V) designedtolowercostand boardspace requirements• Wide DifferentialInputVoltage: ±36V intransducer,test,measurement and dataacquisition Reference systems.
• AdjustableOutput Voltage: 1.2Vto5.0V Combining a stablevoltagereferencewithfourwide
• InitialTolerance: ±2.0% outputswing op-amps makes the LM614 idealfor singlesupply transducers,signalconditioningand• Wide OperatingCurrentRange: 17μA to bridgedrivingwhere largecommon-mode-signalsare20mA common. The voltagereferenceconsistsofa reliable• TolerantofLoad Capacitance band-gap designthatmaintainslow dynamic output impedance (1Ω typical),initialtolerance(2.0%),and APPLICATIONS the abilityto be programmed from 1.2V to 5.0V via two externalresistors.The voltagereferenceisvery• Transducer BridgeDriverand Signal stableeven when drivinglargecapacitiveloads,asProcessing arecommonly encounteredinCMOS dataacquisition• Process and Mass Flow ControlSystems systems.
• Power Supply VoltageMonitor As a member of TI'snew Super-Block™ family,the• BufferedVoltageReferencesforA/D's LM614 isa space-savingmonolithicalternativeto a multichipsolution,offeringa highlevelof integration withoutsacrificingperformance. Connection Diagram Pleasebe aware thatan importantnoticeconcerningavailability,standardwarranty,and use incriticalapplicationsof Texas Instrumentssemiconductorproductsand disclaimerstheretoappearsattheend ofthisdatasheet. 2Super-Blockisa trademarkofdcl_owner. 3Allothertrademarksarethepropertyoftheirrespectiveowners. PRODUCTION DATA informationiscurrentas ofpublicationdate. Copyright© 1998–2013,Texas InstrumentsIncorporatedProductsconform to specificationsper the terms of the Texas Instrumentsstandardwarranty.Productionprocessingdoes not necessarilyincludetestingofallparameters.

SNOSC21C –MAY 1998–REVISED MARCH 2013 www.ti.com These deviceshave limitedbuilt-inESD protection.The leadsshouldbe shortedtogetherorthedeviceplacedinconductivefoam duringstorageorhandlingtopreventelectrostaticdamage totheMOS gates. AbsoluteMaximum Ratings(1)(2) Voltageon Any PinsexceptVR 36V (Max)(3) (referredtoV− pin) −0.3V(Min)(4) CurrentthroughAny InputPin& VR Pin ±20 DifferentialInputVoltage LM614I ±36V LM614C ±32V StorageTemperatureRange −65°C ≤ TJ ≤ +150°C Maximum JunctionTemperature 150°C ThermalResistance,Junction-to-Ambient(5) 150°C SolderingInformation(Soldering,10 sec.) 220°C ESD Tolerance(6) ±1kV (1) Absolutemaximum ratingsindicatelimitsbeyond whichdamage tothecomponent may occur.Electricalspecificationsdo notapply when operatingthedevicebeyond itsratedoperatingconditions. (2) IfMilitary/Aerospacespecifieddevicesarerequired,pleasecontacttheTexas InstrumentsSalesOffice/Distributorsforavailabilityand specifications. (3) Inputvoltageabove V+ isallowed. (4) More accurately,itisexcessivecurrentflow,withresultingexcessheating,thatlimitsthevoltageson allpins.When any pinispulleda diodedropbelowV−,a parasiticNPN transistorturnsON. No latch-upwilloccuras longas thecurrentthroughthatpinremainsbelow theMaximum Rating.Operationisundefinedand unpredictablewhen any parasiticdiodeortransistorisconducting. (5) Junctiontemperaturemay be calculatedusingTJ = TA + P D θjA.The giventhermalresistanceisworst-caseforpackagesinsocketsin stillair.Forpackagessolderedtocopper-cladboardwithdissipationfromone comparatororreferenceoutputtransistor,nominalθjAis 90°C/W fortheDW package. (6) Human body model,100 pF dischargedthrougha 1.5kΩ resistor. OperatingTemperature Range LM614I −40°C ≤ TJ ≤ +85°C LM614C 0°C ≤ TJ ≤ +70°C ElectricalCharacteristics These specificationsapplyforV− = GND = 0V,V+ = 5V,VCM = VOUT = 2.5V,IR = 100μA,FEEDBACK pinshortedtoGND, unlessotherwisespecified.LimitsinstandardtypefaceareforTJ = 25°C; limitsinBoldfacetypeapplyovertheOperating Temperature Range . Symbol Parameter Conditions Typ (1) LM614I Units LM614C Limits(2) IS TotalSupplyCurrent R LOAD = ∞, 450 1000 μA max 4V ≤ V+ ≤ 36V (32V forLM614C) 550 1070 μA max VS SupplyVoltageRange 2.2 2.8 V min 2.9 3 V min 46 32 V max 43 32 V max OPERATIONAL AMPLIFIER VOS1 VOS Over Supply 4V ≤ V+ ≤ 36V 1.5 5.0 mV max (4V ≤ V+ ≤ 32V forLM614C) 2.0 7.0 mV max VOS2 VOS Over VCM V CM = 0V throughVCM = 1.0 5.0 mV max (V + − 1.8V),V+ = 30V 1.5 7.0 mV max VOS3 AverageVOS Drift See (2) μV/°C15ΔT max IB InputBiasCurrent 10 35 nA max 11 40 nA max IOS InputOffsetCurrent 0.2 4 nA max 0.3 5 nA max (1) TypicalvaluesinstandardtypefaceareforTJ = 25°C; valuesinboldfacetypeapplyforthefulloperatingtemperaturerange.These valuesrepresentthemost likelyparametricnorm. (2) Alllimitsareensuredatroom temperature(standardtypeface)oratoperatingtemperatureextremes(boldtypeface).

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www.ti.com SNOSC21C –MAY 1998–REVISED MARCH 2013 ElectricalCharacteristics(continued) These specificationsapplyforV− = GND = 0V,V+ = 5V,VCM = VOUT = 2.5V,IR = 100μA,FEEDBACK pinshortedtoGND, unlessotherwisespecified.LimitsinstandardtypefaceareforTJ = 25°C; limitsinBoldfacetypeapplyovertheOperating Temperature Range . Symbol Parameter Conditions Typ (1) LM614I Units LM614C Limits(2) IOS1 AverageOffset 4 pA/°CΔT DriftCurrent R IN InputResistance Differential 1800 M Ω Common-Mode 3800 M Ω C IN InputCapacitance Common-Mode Input 5.7 pF en VoltageNoise f= 100 Hz,InputReferred 74 nV/√Hz In CurrentNoise f= 100 Hz,InputReferred 58 fA/√Hz CMRR Common-Mode V + = 30V,0V ≤ VCM ≤ (V+ − 1.8V), 95 75 dB min RejectionRatio CMRR = 20 log(ΔVCM /ΔVOS ) 90 70 dB min PSRR Power Supply 4V ≤ V+ ≤ 30V,VCM = V+/2, 110 75 dB min RejectionRatio PSRR = 20 log(ΔV+/ΔVOS ) 100 70 dB min A V Open Loop R L = 10 kΩ toGND, V+ = 30V, 500 94 V/mV VoltageGain 5V ≤ VOUT ≤ 25V 50 40 min SR Slew Rate V + = 30V (3) ±0.70 ±0.50 V/μs±0.65 ±0.45 GBW Gain Bandwidth C L = 50 pF 0.8 MHz

0.52 MHz

VO1 OutputVoltage R L = 10 kΩ toGND V + − 1.4 V + − 1.8 V min Swing High V + = 36V (32V forLM614C) V+ − 1.6 V+ − 1.9 V min VO2 OutputVoltage R L = 10 kΩ toV+ V − + 0.8 V − + 0.95 V max Swing Low V + = 36V (32V forLM614C) V− + 0.9 V− + 1.0 V max IOUT OutputSource V OUT = 2.5V,V+IN = 0V, 25 16 mA min V −IN = −0.3V 15 13 mA min ISINK OutputSink V OUT = 1.6V,V+IN = 0V, 17 13 mA min Current V −IN = 0.3V 9 8 mA min ISHORT ShortCircuitCurrent V OUT = 0V,V+IN = 3V, 30 50 mA max V −IN = 2V,Source 40 60 mA max V OUT = 5V,V+IN = 2V, 30 70 mA max V −IN = 3V,Sink 32 90 mA max VOLTAGE REFERENCE VR VoltageReference See (4) 1.244 1.2191 V min

1.2689 V max

(±2.0%) ΔVR AverageTemperatureDrift See (5) 10 150 PPM/ °C ΔT max ΔVR Hysteresis See (6) 3.2 μV/°CΔTJ V R Change V R(100 μA) − VR(17 μA) 0.05 1 mV max withCurrent 0.1 1.1 mV maxΔVR ΔIR VR(10 mA) − VR(100 μA) (7) 1.5 5 mV max 2.0 5.5 mV max (3) Slew rateismeasured withop amp ina voltagefollowerconfiguration.Forrisingslewrate,theinputvoltageisdrivenfrom5V to25V, and theoutputvoltagetransitionissampled at10V and @20V. Forfallingslewrate,theinputvoltageisdrivenfrom25V to5V,and the outputvoltagetransitionissampled at20V and 10V. (4) VR istheCathode-feedbackvoltage,nominally1.244V. (5) Averagereferencedriftiscalculatedfromthemeasurement ofthereferencevoltageat25°C and atthetemperatureextremes.The drift, inppm/°C, is106•ΔV R /(VR[25°C] •ΔTJ),where ΔV R isthelowestvaluesubtractedfromthehighest,VR[25°C] isthevalueat25°C, and ΔTJ isthetemperaturerange.Thisparameterisensuredby designand sample testing. (6) Hysteresisisthechange inVR caused by a change inTJ,afterthereferencehas been “dehysterized”.To dehysterizethereference;that isminimizethehysteresistothetypicalvalue,cycleitsjunctiontemperatureinthefollowingpattern,spiralingintoward25°C: 25°C, (7) Low contactresistanceisrequiredforaccuratemeasurement. Copyright© 1998–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 3 ProductFolderLinks:LM614

SNOSC21C –MAY 1998–REVISED MARCH 2013 www.ti.com ElectricalCharacteristics(continued) These specificationsapplyforV− = GND = 0V,V+ = 5V,VCM = VOUT = 2.5V,IR = 100μA,FEEDBACK pinshortedtoGND, unlessotherwisespecified.LimitsinstandardtypefaceareforTJ = 25°C; limitsinBoldfacetypeapplyovertheOperating Temperature Range . Symbol Parameter Conditions Typ (1) LM614I Units LM614C Limits(2) R Resistance ΔV R(10→0.1mA) /9.9mA 0.2 0.56 Ω max 0.6 13 Ω maxΔV R(100→17 μA)/83μA ΔVR V R Change V R(Vro = Vr)−VR(Vro = 5.0V) 2.5 7 mV max AV RO withHighVRO (3.76Vbetween Anode and FEEDBACK) 2.8 10 mV max V R Change with V R(V + = 5V) −VR(V + = 36V) 0.1 1.2 mV max V+ Change (V+ = 32V forLM614C) 0.1 1.3 mV maxΔVR ΔV+ VR(V + = 5V) −VR(V + = 3V) 0.01 1 mV max 0.01 1.5 mV max IFB FEEDBACK BiasCurrent V ANODE ≤ VFB ≤ 5.06V 22 50 nA max 29 55 nA max en VoltageNoise BW = 10 Hz to10 kHz,VRO = VR 30 μV RMS

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www.ti.com SNOSC21C –MAY 1998–REVISED MARCH 2013 TypicalPerformance Characteristics(Reference) TJ = 25°C, FEEDBACK pinshortedtoV− = 0V,unlessotherwisenoted ReferenceVoltagevs Temperature on 5 RepresentativeUnits ReferenceVoltageDrift Figure1. Figure2. AcceleratedReferenceVoltageDriftvs.Time ReferenceVoltagevs.Currentand Temperature Figure3. Figure4. ReferenceVoltagevs.Currentand Temperature ReferenceVoltagevs.ReferenceCurrent Figure5. Figure6. Copyright© 1998–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 5 ProductFolderLinks:LM614

SNOSC21C –MAY 1998–REVISED MARCH 2013 www.ti.com TypicalPerformance Characteristics(Reference)(continued) TJ = 25°C, FEEDBACK pinshortedtoV− = 0V,unlessotherwisenoted ReferenceVoltagevs.ReferenceCurrent ReferenceAC StabilityRange Figure7. Figure8. FEEDBACK Currentvs.FEEDBACK-to-Anode Voltage FEEDBACK Currentvs.FEEDBACK-to-Anode Voltage Figure9. Figure10. ReferenceNoise Voltagevs.Frequency ReferenceSmall-SignalResistancevs.Frequency Figure11. Figure12.

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www.ti.com SNOSC21C –MAY 1998–REVISED MARCH 2013 TypicalPerformance Characteristics(Reference)(continued) TJ = 25°C, FEEDBACK pinshortedtoV− = 0V,unlessotherwisenoted ReferencePower-Up Time ReferenceVoltagewithFEEDBACK VoltageStep Figure13. Figure14. ReferenceVoltagewith100∼∼12 μA CurrentStep ReferenceStep Response for100 μA ∼∼ 10 mA CurrentStep Figure15. Figure16. ReferenceVoltageChange withSupply VoltageStep Figure17. Copyright© 1998–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 7 ProductFolderLinks:LM614

SNOSC21C –MAY 1998–REVISED MARCH 2013 www.ti.com TypicalPerformance Characteristics(Op Amps) V+ = 5V,V− = GND = 0V,VCM = V+/2,VOUT = V+/2,TJ = 25°C, unlessotherwisenoted InputCommon-Mode VoltageRange vs.Temperature VOS vs.JunctionTemperature on 9 RepresentativeUnits Figure18. Figure19. InputBias Currentvs.Common-Mode Voltage Slew Rate vs.Temperature and Output Sink Current Figure20. Figure21. Large-SignalStep Response Output VoltageSwing vs.Temp. and Current Figure22. Figure23.

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www.ti.com SNOSC21C –MAY 1998–REVISED MARCH 2013 TypicalPerformance Characteristics(Op Amps) (continued) V+ = 5V,V− = GND = 0V,VCM = V+/2,VOUT = V+/2,TJ = 25°C, unlessotherwisenoted Output Source Currentvs.Output Voltageand Temp. Output Sink Currentvs.Output Voltageand Temp. Figure24. Figure25. Output Swing, Large Signal Output Impedance vs.Frequency and Gain Figure26. Figure27. Small-SignalPulse Response vs.Temp. Small-SignalPulse Response vs.Load Figure28. Figure29. Copyright© 1998–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 9 ProductFolderLinks:LM614

SNOSC21C –MAY 1998–REVISED MARCH 2013 www.ti.com TypicalPerformance Characteristics(Op Amps) (continued) V+ = 5V,V− = GND = 0V,VCM = V+/2,VOUT = V+/2,TJ = 25°C, unlessotherwisenoted Op Amp VoltageNoise vs.Frequency Op Amp CurrentNoise vs.Frequency Figure30. Figure31. Small-SignalVoltageGain vs.Frequency and Temperature Small-SignalVoltageGain vs.Frequency and Load Figure32. Figure33. FollowerSmall-SignalFrequency Response Common-Mode InputVoltageRejectionRatio Figure34. Figure35.

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www.ti.com SNOSC21C –MAY 1998–REVISED MARCH 2013 TypicalPerformance Characteristics(Op Amps) (continued) V+ = 5V,V− = GND = 0V,VCM = V+/2,VOUT = V+/2,TJ = 25°C, unlessotherwisenoted Power Supply Currentvs.Power Supply Voltage PositivePower Supply VoltageRejectionRatio Figure36. Figure37. NegativePower Supply VoltageRejectionRatio InputOffsetCurrentvs.JunctionTemperature Figure38. Figure39. InputBias Currentvs.JunctionTemperature Figure40. Copyright© 1998–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 11 ProductFolderLinks:LM614

SNOSC21C –MAY 1998–REVISED MARCH 2013 www.ti.com TypicalPerformance Distributions Average VOS DriftIndustrialTemperature Range Average VOS DriftCommercial Temperature Range Figure41. Figure42. Average IOS DriftIndustrialTemperature Range Average IOS DriftCommercial Temperature Range Figure43. Figure44. VoltageReferenceBroad-BandNoise Distribution Op Amp VoltageNoise Distribution Figure45. Figure46.

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www.ti.com SNOSC21C –MAY 1998–REVISED MARCH 2013 TypicalPerformance Distributions(continued) Op Amp CurrentNoise Distribution Figure47. Copyright© 1998–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 13 ProductFolderLinks:LM614

SNOSC21C –MAY 1998–REVISED MARCH 2013 www.ti.com

APPLICATION INFORMATION

The voltagereferenceisof a shunt regulatortopologythatmodels as a simplezener diode.With currentIr flowinginthe “forward” directionthereisthe familiardiodetransferfunction.Ir flowinginthe reversedirection forcesthereferencevoltagetobe developedfromcathodetoanode.The cathodemay swingfroma diodedrop below V− tothereferencevoltageor totheavalanchevoltageoftheparallelprotectiondiode,nominally7V. A 5.0VreferencewithV+ = 3V isallowed. Figure48. VoltagesAssociatedwithReference (CurrentSource Ir isExternal) The referenceequivalentcircuitrevealshow Vris held at the constant1.2V by feedback,and how the FEEDBACK pinpasseslittlecurrent. To generatetherequiredreversecurrent,typicallya resistorisconnectedfroma supplyvoltagehigherthanthe referencevoltage.Varyingthatvoltage,and so varyingIr,has smalleffectwiththeequivalentseriesresistanceof lessthanan ohm atthehighercurrents.Alternatively,an activecurrentsource,such as theLM134 series,may generateIr. Figure49. ReferenceEquivalentCircuit Figure50. 1.2VReference

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www.ti.com SNOSC21C –MAY 1998–REVISED MARCH 2013 Capacitorsin parallelwiththe referenceare allowed.See Reference AC StabilityRange typicalcurve for capacitancevalues— from20 μA to3 mA any capacitorvalueisstable.Withthereference'swide stabilityrange withresistiveand capacitiveloads,a widerangeofRC filtervalueswillperformnoisefiltering. AdjustableReference The FEEDBACK pinallowsthereferenceoutputvoltage,Vro,tovaryfrom1.24V to5.0V.The referenceattempts toholdVr at1.24V.IfVr isabove 1.24V,thereferencewillconductcurrentfromCathode toAnode; FEEDBACK currentalwaysremainslow.IfFEEDBACK isconnectedtoAnode, thenVro = Vr = 1.24V.For highervoltages FEEDBACK isheldata constantvoltageabove Anode— say 3.76VforVro = 5V.Connectinga resistoracrossthe constantVr generatesa currentI=Vr/R1 flowingfrom Cathode intoFEEDBACK node. A Theveninequivalent 3.76V isgeneratedfromFEEDBACK toAnode withR2=3.76/I.For a 1% error,use R1 such thatIisgreaterthan one hundredtimestheFEEDBACK biascurrent.Forexample,keep I≥ 5.5μA. Figure51. Thevenin Equivalent ofReferencewith5V Output R1 = Vr/I= 1.24/32μ = 39k Figure52. ResistorsR1 and R2 Program ReferenceOutput Voltagetobe 5V UnderstandingthatVr isfixedand thatvoltagesources,resistors,and capacitorsmay be tiedtotheFEEDBACK pin,a rangeofVr temperaturecoefficientsmay be synthesized. Copyright© 1998–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 15 ProductFolderLinks:LM614

SNOSC21C –MAY 1998–REVISED MARCH 2013 www.ti.com Figure53. Output Voltagehas NegativeTemperature Coefficient(TC)ifR2 has NegativeTC Figure54. Output Voltagehas PositiveTC ifR1 has NegativeTC Figure55. Diode inSerieswithR1 Causes Voltage across R1 and R2 tobe Proportionalto AbsoluteTemperature (PTAT) Connectinga resistoracrossCathode-to-FEEDBACK createsa 0 TC currentsource,buta rangeofTCs may be synthesized.

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www.ti.com SNOSC21C –MAY 1998–REVISED MARCH 2013 I= Vr/R1= 1.24/R1 Figure56. CurrentSource isProgrammed by R1 Figure57. Proportional-to-Absolute-Temperature CurrentSource Figure58. Negative-TCCurrentSource Hysteresis The referencevoltagedepends,slightly,on the thermalhistoryof the die.Competitivemicro-powerproducts vary— always check the data sheet forany given device.Do not assume thatno specificationmeans no hysteresis. Copyright© 1998–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 17 ProductFolderLinks:LM614

SNOSC21C –MAY 1998–REVISED MARCH 2013 www.ti.com OPERATIONAL AMPLIFIERS Any amp orthereferencemay be biasedinany way withno effecton theotheramps orreference,exceptwhen a substratediodeconducts(seeElectricalCharacteristics).One amp inputmay be outsidethecommon-mode range,anotheramp may be operatedas a comparator,anotherwithallterminalsfloatingwithno effecton the others(tyinginvertinginputto outputand non-invertinginputto V− on unused amps ispreferred).Choosing operatingpointsthatcause oscillation,such as drivingtoolargea capacitiveload,isbestavoided. Op Amp Output Stage These op amps, liketheirLM124 series,have flexibleand relativelywide-swingoutputstages.There aresimple rulestooptimizeoutputswing,reducecross-overdistortion,and optimizecapacitivedrivecapability: 1. OutputSwing:Unloaded,the 42μA pull-downwillbringthe outputwithin300 mV of V− over the military temperaturerange.Ifmore than42μA isrequired,a resistorfrom outputtoV− willhelp.Swing acrossany loadmay be improvedslightlyiftheloadcan be tiedtoV+,atthecostofpoorersinkingopen-loopvoltage gain 2. Cross-overDistortion:The LM614 has lowercross-overdistortion(a 1 VBE deadband versus3 VBE forthe LM124), and increasedslew rateas shown inthecharacteristiccurves.A resistorpull-upor pull-downwill forceclass-Aoperationwithonly the PNP or NPN outputtransistorconducting,eliminatingcross-over distortion 3. CapacitiveDrive:Limitedby theoutputpolecaused by theoutputresistancedrivingcapacitiveloads,a pull- down resistorconducting1 mA ormore reducestheoutputstageNPN re untiltheoutputresistanceisthatof thecurrentlimit25Ω.200pF may thenbe drivenwithoutoscillation. Op Amp InputStage The lateralPNP inputtransistors,unlikemost op amps, have BV EBO equalto the absolutemaximum supply voltage.Also,theyhave no diodeclamps tothepositivesupplynoracrosstheinputs.These featuresmake the inputslooklikehighimpedancestoinputsourcesproducinglargedifferentialand common-mode voltages. TypicalApplications Figure59. Simple Low QuiescentDrainVoltageRegulator. Totalsupply currentapproximately320μA, when VIN = +5V.

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www.ti.com SNOSC21C –MAY 1998–REVISED MARCH 2013 *10kmust be low t.c.trimpot. Figure60. UltraLow Noise 10.00VReference. Totaloutputnoiseistypically14μVRMS . VOUT = (R1 /Pe+ 1)V REF R 1,R 2 shouldbe 1% metalfilm Pβ shouldbe lowT.C.trimpot Figure61. Slow Rise Time Upon Power-Up, AdjustableTransducer BridgeDriver. Rise timeisapproximately1ms. Copyright© 1998–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 19 ProductFolderLinks:LM614

SNOSC21C –MAY 1998–REVISED MARCH 2013 www.ti.com (1) Setzerocode voltage,thenadjust10Ω gainadjustpotforfullscale. Figure62. Transducer Data AcquisitionSystem.

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www.ti.com SNOSC21C –MAY 1998–REVISED MARCH 2013 SimplifiedSchematic Diagrams Figure63. Op Amp Figure64. Reference/Bias Copyright© 1998–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 21 ProductFolderLinks:LM614

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REVISION HISTORY

Changes from RevisionB (March 2013)toRevisionC Page

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www.ti.com 27-Jul-2016 Addendum-Page 1 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Drawing Pins Package Qty Eco Plan (2) Lead/Ball Finish (6) MSL Peak Temp (3) Op Temp (°C) Device Marking (4/5) Samples LM614 MDC ACTIVE DIESALE Y 0 100 Green (RoHS & no Sb/Br) Call TI Level-1-NA-UNLIM -40 to 85 LM614CWM/NOPB ACTIVE SOIC DW 16 45 Green (RoHS & no Sb/Br) CU SN Level-3-260C-168 HR 0 to 70 LM614CWM LM614IWM LIFEBUY SOIC DW 16 45 TBD Call TI Call TI 0 to 70 LM614IWM LM614IWM/NOPB ACTIVE SOIC DW 16 45 Green (RoHS & no Sb/Br) CU SN Level-3-260C-168 HR 0 to 70 LM614IWM (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability information and additional product content details. TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above. Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material) (3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. (4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device. (5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation of the previous line and the two combined represent the entire Device Marking for that device. (6) Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish value exceeds the maximum column width.

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