LM614

LM614 NSC | Alldatasheet

Document overview

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Technical content

Features

n Low operating current: 300 µA n Wide supply voltage range: 4V to 36V n Wide common-mode range: V − to (V+− 1.8V) n Wide differential input voltage:±36V n Available in plastic package rated for Military Temperature Range Operation Reference n Adjustable output voltage: 1.2V to 6.3V n Tight initial tolerance available:±0.6% n Wide operating current range: 17 µA to 20 mA n Tolerant of load capacitance

Applications

n Transducer bridge driver and signal processing n Process and mass flow control systems n Power supply voltage monitor n Buffered voltage references for A/D’s Connection Diagram

Ordering Information

Tolerance & VOS Temperature Range Package NSC DrawingMilitary Industrial Commercial ±0.6% @ LM614AMN LM614AIN — 16-pin N16E 80 ppm/˚C max Molded DIP VOS ≤ 3.5 mV max LM614AMJ/883 — — 16-pin J16A (Note 13) Ceramic DIP ±2.0% @ LM614MN LM614BIN LM614CN 16-pin N16E 150 ppm/˚C max Molded DIP VOS ≤ 5.0 mV — LM614WM LM614CWM 16-pin Wide M16B Surface Mount Super-Block™ is a trademark of National Semiconductor Corporation. DS009326-1 May 1998 LM614 Quad Operational Amplifier and Adjustable Reference © 1999 National Semiconductor Corporation DS009326 www.national.com

Absolute Maximum Ratings(Note 1) If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/ Distributors for availability and specifications. Voltage on Any Pins except V R (referred to V− pin) (Note 2) 36V (Max) (Note 3) −0.3V (Min) Current through Any Input Pin & V R Pin ±20 mA Differential Input Voltage Military and Industrial ±36V Commercial ±32V Storage Temperature Range −65˚C ≤ TJ ≤ +150˚C Maximum Junction Temperature 150˚C Thermal Resistance, Junction-to-Ambient (Note 4) N Package 100˚C Soldering Information (Soldering, 10 seconds) N Package 260˚C ESD Tolerance (Note 5) ±1kV Operating Temperature Range LM614AI, LM614I, LM614BI −40˚C ≤ TJ ≤ +85˚C LM614AM, LM614M −55˚C ≤ TJ ≤ +125˚C LM614C 0˚C ≤ TJ ≤ +70˚C

Electrical Characteristics

These specifications apply for V− = GND = 0V, V+ = 5V, VCM = VOUT = 2.5V, IR = 100 µA, FEEDBACK pin shorted to GND, unless otherwise specified. Limits in standard typeface are for TJ = 25˚C; limits inboldface typeapply over theOperating Temperature Range . Symbol Parameter Conditions Typical (Note 6) LM614AM LM614M Units LM614AI LM614BI Limits LM614I (Note 7) LM614C Limits (Note 7) IS Total Supply R LOAD =∞ , 450 940 1000 µA max Current 4V ≤ V+ ≤ 36V (32V for LM614C) 550 1000 1070 µA max VS Supply Voltage Range 2.2 2.8 2.8 V min 2.9 3 3 V min 46 36 32 V max 43 36 32 V max OPERATIONAL AMPLIFIER V OS1 VOS Over Supply 4V ≤ V+ ≤ 36V 1.5 3.5 5.0 mV max (4V ≤ V+ ≤ 32V for LM614C) 2.0 6.0 7.0 mV max VOS2 VOS Over VCM VCM = 0V through VCM = 1.0 3.5 5.0 mV max Average VOS Drift (Note 7) 15 µV/˚C max IB Input Bias Current 10 25 35 nA max 11 30 40 nA max IOS Input Offset Current 0.2 4 4 nA max 0.3 5 5 nA max Average Offset Drift Current 4 pA/˚C R IN Input Resistance Differential 1800 M Ω Common-Mode 3800 M Ω C IN Input Capacitance Common-Mode Input 5.7 pF en Voltage Noise f = 100 Hz, Input Referred 74 In Current Noise f = 100 Hz, Input Referred 58 CMRR Common-Mode V + = 30V, 0V≤ VCM ≤ (V+ − 1.8V), 95 80 75 dB min Rejection Ratio CMRR = 20 log (ΔVCM /ΔVOS ) 90 75 70 dB min www.national.com 2

Electrical Characteristics(Continued) These specifications apply for V− = GND = 0V, V+ = 5V, VCM = VOUT = 2.5V, IR = 100 µA, FEEDBACK pin shorted to GND, unless otherwise specified. Limits in standard typeface are for TJ = 25˚C; limits inboldface typeapply over theOperating Temperature Range . Symbol Parameter Conditions Typical (Note 6) LM614AM LM614M Units LM614AI LM614BI Limits LM614I (Note 7) LM614C Limits (Note 7) OPERATIONAL AMPLIFIER PSRR Power Supply 4V ≤ V + ≤ 30V, VCM = V+/2, 110 80 75 dB min Rejection Ratio PSRR = 20 log (ΔV+/ΔVOS ) 100 75 70 dB min AV Open Loop R L = 10 kΩ to GND, V+ = 30V, 500 100 94 V/mV Voltage Gain 5V ≤ VOUT ≤ 25V 50 40 40 min SR Slew Rate V + = 30V (Note 8) ±0.70 ±0.55 ±0.50 V/µs ±0.65 ±0.45 ±0.45 GBW Gain Bandwidth C L = 50 pF 0.8 MHz

0.52 MHz

VO1 Output Voltage R L = 10 kΩ to GND V + − 1.4 V + − 1.7 V + − 1.8 V min Swing High V + = 36V (32V for LM614C) V+ − 1.6 V + − 1.9 V + − 1.9 V min VO2 Output Voltage R L = 10 kΩ to V+ V− + 0.8 V − + 0.9 V − + 0.95 V max Swing Low V + = 36V (32V for LM614C) V− + 0.9 V − + 1.0 V − + 1.0 V max IOUT Output Source V OUT = 2.5V, V+IN = 0V, 25 20 16 mA min V−IN = −0.3V 15 13 13 mA min ISINK Output Sink V OUT = 1.6V, V+IN = 0V, 17 14 13 mA min Current V −IN = 0.3V 98 8 mA min ISHORT Short Circuit Current VOUT = 0V, V+IN = 3V, 30 50 50 mA max V−IN = 2V, Source 40 60 60 mA max VOUT = 5V, V+IN = 2V, 30 60 70 mA max V−IN = 3V, Sink 32 80 90 mA max VOLTAGE REFERENCE V R Voltage Reference (Note 9) 1.244 1.2365 1.2191 V min 1.2515 1.2689 V max (±0.6% )( ±2.0% ) Average Temperature (Note 10) 10 80 150 PPM/˚C Drift max Hysteresis (Note 11) 3.2 µV/˚C VR Change V R(100 µA)−V R(17 µA) 0.05 1 1 mV max with Current 0.1 1.1 1.1 mV max VR(10 mA) −V R(100 µA) 1.5 5 5 mV max (Note 12) 2.0 5.5 5.5 mV max ΔVR(100→ 17 µA)/83 µA 0.6 13 13 Ω max VR Change V R(Vro = Vr)−V R(Vro = 6.3V) 2.5 7 7 mV max with High VRO (5.06V between Anode and 2.8 10 10 mV max FEEDBACK) www.national.com3

Electrical Characteristics(Continued) These specifications apply for V− = GND = 0V, V+ = 5V, VCM = VOUT = 2.5V, IR = 100 µA, FEEDBACK pin shorted to GND, unless otherwise specified. Limits in standard typeface are for TJ = 25˚C; limits inboldface typeapply over theOperating Temperature Range . Symbol Parameter Conditions Typical (Note 6) LM614AM LM614M Units LM614AI LM614BI Limits LM614I (Note 7) LM614C Limits (Note 7) VOLTAGE REFERENCE VR Change with V R(V + = 5V) −V R(V + = 36V) 0.1 1.2 1.2 mV max V+ Change (V + = 32V for LM614C) 0.1 1.3 1.3 mV max VR(V + = 5V) −V R(V + = 3V) 0.01 1 1 mV max 0.01 1.5 1.5 mV max IFB FEEDBACK Bias V ANODE ≤ VFB ≤ 5.06V 22 35 50 nA max Current 29 40 55 nA max en Voltage Noise BW = 10 Hz to 10 kHz, 30 µV RMS VRO = VR Note 1:Absolute maximum ratings indicate limits beyond which damage to the component may occur. Electrical specifications do not apply when operating the de- vice beyond its rated operating conditions. Note 2:Input voltage above V+ is allowed. Note 3:More accurately, it is excessive current flow, with resulting excess heating, that limits the voltages on all pins. When any pin is pulled a diode drop below V−, a parasitic NPN transistor turns ON. No latch-up will occur as long as the current through that pin remains below the Maximum Rating. Operation is undefined and unpredictable when any parasitic diode or transistor is conducting. Note 4:Junction temperature may be calculated using TJ = TA +P D θjA. The given thermal resistance is worst-case for packages in sockets in still air. For packages soldered to copper-clad board with dissipation from one comparator or reference output transistor, nominalθjA are 90˚C/W for the N package, WM package. Note 5:Human body model, 100 pF discharged through a 1.5 kΩ resistor. Note 6:Typical values in standard typeface are for TJ = 25˚C; values inboldface typeapply for the full operating temperature range. These values represent the most likely parametric norm. Note 7:All limits are guaranteed at room temperature (standard type face) or at operating temperature extremes(bold type face). Note 8:Slew rate is measured with op amp in a voltage follower configuration. For rising slew rate, the input voltage is driven from 5V to 25V, and the output voltage transition is sampled at 10V and@20V. For falling slew rate, the input voltage is driven from 25V to 5V, and the output voltage transition is sampled at 20V and 10V. Note 9:VR is the Cathode-feedback voltage, nominally 1.244V. Note 10:Average reference drift is calculated from the measurement of the reference voltage at 25˚C and at the temperature extremes. The drift, in ppm/˚C, is 106•ΔVR /(VR[25˚C]•ΔTJ), whereΔVR is the lowest value subtracted from the highest, VR[25˚C]is the value at 25˚C, andΔTJ is the temperature range. This parameter is guaranteed by design and sample testing. Note 11:Hysteresis is the change in VR caused by a change in TJ, after the reference has been “dehysterized”. To dehysterize the reference; that is minimize the hysteresis to the typical value, cycle its junction temperature in the following pattern, spiraling in toward 25˚C: 25˚C, 85˚C, −40˚C, 70˚C, 0˚C, 25˚C. Note 12:Low contact resistance is required for accurate measurement. Note 13:A military RETSLM614AMX electrical test specification is available on request. The LM614AMJ/883 can also be procured as a Standard Military Drawing. Simplified Schematic Diagrams Op Amp DS009326-2 www.national.com 4

Simplified Schematic Diagrams(Continued) Typical Performance Characteristics (Reference)TJ = 25˚C, FEEDBACK pin shorted to V− = 0V, unless otherwise noted Reference / Bias DS009326-3 Reference Voltage vs Temperature on 5 Representative Units DS009326-47 Reference Voltage Drift DS009326-48 Accelerated Reference Voltage Drift vs Time DS009326-49 Reference Voltage vs Current and Temperature DS009326-50 Reference Voltage vs Current and Temperature DS009326-51 Reference Voltage vs Reference Current DS009326-52 www.national.com5

Typical Performance Characteristics (Reference)TJ = 25˚C, FEEDBACK pin shorted to V− = 0V, unless otherwise noted (Continued) Reference Voltage vs Reference Current DS009326-53 Reference AC Stability Range DS009326-54 FEEDBACK Current vs FEEDBACK-to-Anode Voltage DS009326-55 FEEDBACK Current vs FEEDBACK-to-Anode Voltage DS009326-56 Reference Noise Voltage vs Frequency DS009326-57 Reference Small-Signal Resistance vs Frequency DS009326-58 Reference Power-Up Time DS009326-59 Reference Voltage with FEEDBACK Voltage Step DS009326-60 Reference Voltage with 100 z12 µA Current Step DS009326-61 www.national.com 6

Typical Performance Characteristics (Reference)TJ = 25˚C, FEEDBACK pin shorted to V− = 0V, unless otherwise noted (Continued) Typical Performance Characteristics (Op Amps)V+ = 5V, V− = GND = 0V, VCM = V+/2, VOUT = V+/2, TJ = 25˚C, unless otherwise noted Reference Step Response for 100 µAz10 mA Current Step DS009326-62 Reference Voltage Change with Supply Voltage Step DS009326-63 Input Common-Mode Voltage Range vs Temperature DS009326-64 VOS vs Junction Temperature on 9 Representative Units DS009326-65 Input Bias Current vs Common-Mode Voltage DS009326-66 Slew Rate vs Temperature and Output Sink Current DS009326-67 Large-Signal Step Response DS009326-68 Output Voltage Swing vs Temp. and Current DS009326-69 www.national.com7

Typical Performance Characteristics (Op Amps)V+ = 5V, V− = GND = 0V, VCM = V+/2, VOUT = V+/2, TJ = 25˚C, unless otherwise noted (Continued) Output Source Current vs Output Voltage and Temp. DS009326-70 Output Sink Current vs Output Voltage and Temp. DS009326-71 Output Swing, Large Signal DS009326-72 Output Impedance vs Frequency and Gain DS009326-73 Small-Signal Pulse Response vs Temp. DS009326-74 Small-Signal Pulse Response vs Load DS009326-75 Op Amp Voltage Noise vs Frequency DS009326-76 Op Amp Current Noise vs Frequency DS009326-77 Small-Signal Voltage Gain vs Frequency and Temperature DS009326-78 www.national.com 8

Typical Performance Characteristics (Op Amps)V+ = 5V, V− = GND = 0V, VCM = V+/2, VOUT = V+/2, TJ = 25˚C, unless otherwise noted (Continued) Small-Signal Voltage Gain vs Frequency and Load DS009326-79 Follower Small-Signal Frequency Response DS009326-80 Common-Mode Input Voltage Rejection Ratio DS009326-81 Power Supply Current vs Power Supply Voltage DS009326-7 Positive Power Supply Voltage Rejection Ratio DS009326-21 Negative Power Supply Voltage Rejection Ratio DS009326-22 www.national.com9

Typical Performance Characteristics (Op Amps)V+ = 5V, V− = GND = 0V, VCM = V+/2, VOUT = V+/2, TJ = 25˚C, unless otherwise noted (Continued) Typical Performance Distributions Input Offset Current vs Junction Temperature DS009326-24 Input Bias Current vs Junction Temperature DS009326-38 Average VOS Drift Military Temperature Range DS009326-29 Average VOS Drift Industrial Temperature Range DS009326-30 Average VOS Drift Commercial Temperature Range DS009326-31 Average IOS Drift Military Temperature Range DS009326-32 www.national.com 10

Typical Performance Distributions(Continued) Average IOS Drift Industrial Temperature Range DS009326-33 Average IOS Drift Commercial Temperature Range DS009326-34 Voltage Reference Broad-Band Noise Distribution DS009326-35 Op Amp Voltage Noise Distribution DS009326-36 Op Amp Current Noise Distribution DS009326-37 www.national.com11

FIGURE 16. Transducer Data Acquisition System. Set zero code voltage, then adjust 10Ω gain adjust pot for full

Physical Dimensionsinches (millimeters) unless otherwise noted Ceramic Dual-In-Line Package (J) Order Number LM614AMJ/883 16-Lead Molded Small Outline Package (WM) Order Number LM614CWM or LM614IWM www.national.com 16

Physical Dimensionsinches (millimeters) unless otherwise noted (Continued) LIFE SUPPORT POLICY NATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF NATIONAL SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. National Semiconductor Corporation Americas Tel: 1-800-272-9959 Fax: 1-800-737-7018 Email: support@nsc.com National Semiconductor Europe Fax: +49 (0) 1 80-530 85 86 Email: europe.support@nsc.com Deutsch Tel: +49 (0) 1 80-530 85 85 English Tel: +49 (0) 1 80-532 78 32 Français Tel: +49 (0) 1 80-532 93 58 Italiano Tel: +49 (0) 1 80-534 16 80 National Semiconductor Asia Pacific Customer Response Group Tel: 65-2544466 Fax: 65-2504466 Email: sea.support@nsc.com National Semiconductor Japan Ltd. Tel: 81-3-5639-7560 Fax: 81-3-5639-7507 www.national.com 16-Lead Molded Dual-In-Line Package (N) Order Number LM614CN, LM614AIN, LM614BIN, LM614AMN or LM614MN LM614 Quad Operational Amplifier and Adjustable Reference National does not assume any responsibility for use of any circuitry described, no circuit patent licenses are implied and National reserves the right at any time without notice to change said circuitry and specifications.