LM613 TI1 | Alldatasheet
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www.ti.com SNOSC11B –AUGUST 2000–REVISED MARCH 2013 LM613DualOperationalAmplifiers,DualComparators,andAdjustableReference Check forSamples: LM613 1FEATURES DESCRIPTION The LM613 consists of dual op-amps, dual23OP AMP comparators,and a programmable voltagereference• Low OperatingCurrent(Op Amp): 300 μA ina 16-pinpackage.The op-amps out-performsmost
- Wide Supply VoltageRange: 4V to36V single-supplyop-amps by providinghigherspeed and bandwidthalongwithlow supplycurrent.Thisdevice• Wide Common-Mode Range: V− to(V+ − 1.8V) was specificallydesigned to lower cost and board• Wide DifferentialInputVoltage:±36V space requirements in transducer, test,
- AvailableinPlasticPackage Rated forMilitary measurement,and dataacquisitionsystems. Temp. Range Operation Combining a stablevoltagereferencewith wideREFERENCE outputswing op-amps makes the LM613 idealfor
- AdjustableOutput Voltage:1.2Vto6.3V singlesupply transducers,signalconditioningand bridgedrivingwhere largecommon-mode-signalsare• TightInitialToleranceAvailable:±0.6% common. The voltagereferenceconsistsofa reliable• Wide OperatingCurrentRange: 17 μA to20 band-gap designthatmaintainslow dynamic outputmA impedance (1Ω typical),excellentinitialtolerance
- TolerantofLoad Capacitance (0.6%),and the abilityto be programmed from 1.2V to 6.3V via two externalresistors.The voltage referenceis very stableeven when drivinglargeAPPLICATIONS capacitiveloads,as are commonly encounteredin• Transducer BridgeDriver CMOS dataacquisitionsystems.
- Process and Mass Flow ControlSystems As a member ofTI'sSuper-Block™ family,theLM613• Power Supply VoltageMonitor is a space-savingmonolithicalternativeto a multi- chip solution,offeringa high levelof integration• BufferedVoltageReferencesforA/D's withoutsacrificingperformance. Connection Diagrams Top View Figure1.CDIP and SOIC Packages Figure2.E Package Pinout See Package Numbers NFE0016A and DW0016B Pleasebe aware thatan importantnoticeconcerningavailability,standardwarranty,and use incriticalapplicationsof Texas Instrumentssemiconductorproductsand disclaimerstheretoappearsattheend ofthisdatasheet. 2Super-Blockisa trademarkofTexas Instruments. 3Allothertrademarksarethepropertyoftheirrespectiveowners. PRODUCTION DATA informationiscurrentas ofpublicationdate. Copyright© 2000–2013,Texas InstrumentsIncorporatedProductsconform to specificationsper the terms of the Texas Instrumentsstandardwarranty.Productionprocessingdoes not necessarilyincludetestingofallparameters.
SNOSC11B –AUGUST 2000–REVISED MARCH 2013 www.ti.com *10kmust be low t.c.trimpot Figure3. UltraLow Noise,10.00VReference TotalOutput Noise isTypically14 μVRMS
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www.ti.com SNOSC11B –AUGUST 2000–REVISED MARCH 2013 These deviceshave limitedbuilt-inESD protection.The leadsshouldbe shortedtogetherorthedeviceplacedinconductivefoam duringstorageorhandlingtopreventelectrostaticdamage totheMOS gates. AbsoluteMaximum Ratings(1)(2) See (3) 36V (Max) Voltageon Any PinExceptVR (referredtoV−pin) See (4) −0.3V(Min) CurrentthroughAny InputPin& VR Pin ±20 mA Militaryand Industrial ±36V DifferentialInputVoltage Commercial ±32V StorageTemperatureRange −65°C ≤ TJ ≤ +150°C Maximum JunctionTemperature(5) 150°C N Package 100°C/W ThermalResistance,Junction-to-Ambient(6) N Package 260°C SolderingInformation(10Sec.) ESD Tolerance(7) ±1 kV (1) Absolutemaximum ratingsindicatelimitsbeyond whichdamage tothecomponent may occur.Electricalspecificationsdo notapply when operatingthedevicebeyond itsratedoperatingconditions. (2) IfMilitary/Aerospacespecifieddevicesarerequired,pleasecontacttheTexas InstrumentsSalesOffice/Distributorsforavailabilityand specifications. (3) Inputvoltageabove V+ isallowed.As longas one inputpinvoltageremainsinsidethecommon-mode range,thecomparatorwilldeliver thecorrectoutput. (4) More accurately,itisexcessivecurrentflow,withresultingexcessheating,thatlimitsthevoltageson allpins.When any pinispulleda diodedropbelowV−,a parasiticNPN transistorturnsON. No latch-upwilloccuras longas thecurrentthroughthatpinremainsbelow theMaximum Rating.Operationisundefinedand unpredictablewhen any parasiticdiodeortransistorisconducting. (5) Simultaneousshort-circuitofmultiplecomparatorswhileusinghighsupplyvoltagesmay forcejunctiontemperatureabove maximum, and thusshouldnotbe continuous. (6) Junctiontemperaturemay be calculatedusingTJ = TA + PD θJA.Thegiventhermalresistanceisworst-caseforpackagesinsocketsin stillair.Forpackagessolderedtocopper-cladboardwithdissipationfromone comparatororreferenceoutputtransistor,nominalθJA is 90°C/W fortheN package,and 135°C/W fortheDW0016B package. (7) Human body model,100 pF dischargedthrougha 1.5kΩ resistor. OperatingTemperature Range LM613AI,LM613BI −40°C to+85°C LM613AM, LM613M −55°C to+125°C LM613C 0°C ≤ TJ ≤ +70°C Copyright© 2000–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 3 ProductFolderLinks:LM613
SNOSC11B –AUGUST 2000–REVISED MARCH 2013 www.ti.com ElectricalCharacteristics These specificationsapplyforV− = GND = 0V,V+ = 5V,VCM = VOUT = 2.5V,IR = 100 μA,FEEDBACK pinshortedtoGND, unlessotherwisespecified.LimitsinstandardtypefaceareforTJ = 25°C; limitsinboldfacetypeapplyovertheOperating Temperature Range . LM613MLM613AM LM613IParameter TestConditions Typ (1) LM613AI UnitsLM613CLimits(2) Limits(2) IS TotalSupplyCurrent R LOAD = ∞, 450 940 1000 μA (Max) 4V ≤ V+ ≤ 36V (32V forLM613C) 550 1000 1070 μA (Max) VS SupplyVoltageRange 2.2 2.8 2.8 V (Min) 2.9 3 3 V (Min) 46 36 32 V (Max) 43 36 32 V (Max) OPERATIONAL AMPLIFIERS VOS1 VOS Over Supply 4V ≤ V+ ≤ 36V 1.5 3.5 5.0 mV (Max) (4V ≤ V+ ≤ 32V forLM613C) 2.0 6.0 7.0 mV (Max) VOS2 VOS Over VCM VCM = 0V throughVCM = 1.0 3.5 5.0 mV (Max) VOS3 AverageVOS Drift See (2) 15 μV/°C ΔT (Max) IB InputBiasCurrent 10 25 35 nA (Max) 11 30 40 nA (Max) IOS InputOffsetCurrent 0.2 4 4 nA (Max) 0.3 5 5 nA (Max) IOS1 AverageOffsetCurrent 4 pA/°CΔT R IN InputResistance Differential 1000 M Ω C IN InputCapacitance Common-Mode 6 pF en VoltageNoise f= 100 Hz,InputReferred 74 nV/√Hz In CurrentNoise f= 100 Hz,InputReferred 58 fA/√Hz CMRR Common-Mode V+ = 30V,0V ≤ VCM ≤ (V+ − 1.8V) 95 80 75 dB (Min) RejectionRatio CMRR = 20 log(ΔVCM /ΔVOS ) 90 75 70 dB (Min) PSRR Power Supply 4V ≤ V+ ≤ 30V,VCM = V+/2, 110 80 75 dB (Min) RejectionRatio PSRR = 20 log(ΔV+/VOS ) 100 75 70 dB (Min) AV Open Loop VoltageGain R L = 10 kΩ toGND, V+ = 30V, 500 100 94 V/mV 5V ≤ VOUT ≤ 25V 50 40 40 (Min) GBW Gain Bandwidth C L = 50 pF 0.8 MHz
0.5 MHz
VO1 OutputVoltage R L = 10 kΩ toGND, V+ − 1.4 V+ − 1.7 V+ − 1.8 V (Min) Swing High V+ = 36V (32V forLM613C) V+ − 1.6 V+ − 1.9 V+ − 1.9 V (Min) VO2 OutputVoltage R L = 10 kΩ toV+, V− + 0.8 V− + 0.9 V− + 0.95 V (Max) Swing Low V+ = 36V (32V forLM613C) V− + 0.9 V− + 1.0 V− + 1.0 V (Max) IOUT OutputSourceCurrent VOUT = 2.5V,V+ IN = 0V, 25 20 16 mA (Min) IN = −0.3V 15 13 13 mA (Min) ISINK OutputSinkCurrent VOUT = 1.6V,V+ IN = 0V, 17 14 13 mA (Min) IN = 0.3V 9 8 8 mA (Min) ISHORT ShortCircuitCurrent VOUT = 0V,V+ IN = 3V, 30 50 50 mA (Max) IN = 2V 40 60 60 mA (Max) VOUT = 5V,V+ IN = 2V, 30 60 70 mA (Max)V−IN = 3V 32 80 90 mA (Max) (1) TypicalvaluesinstandardtypefaceareforTJ = 25°C; valuesinbold facetypeapplyforthefulloperatingtemperaturerange.These valuesrepresentthemost likelyparametricnorm. (2) Alllimitsareensuredatroom temperature(standardtypeface)oratoperatingtemperatureextremes(boldtypeface). (3) Slew rateismeasured withtheop amp ina voltagefollowerconfiguration.Forrisingslewrate,theinputvoltageisdrivenfrom5V to 25V,and theoutputvoltagetransitionissampled at10V and @ 20V.Forfallingslewrate,theinputvoltageisdrivenfrom25V to5V, and theoutputvoltagetransitionissampled at20V and 10V.
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www.ti.com SNOSC11B –AUGUST 2000–REVISED MARCH 2013 ElectricalCharacteristics(continued) These specificationsapplyforV− = GND = 0V,V+ = 5V,VCM = VOUT = 2.5V,IR = 100 μA,FEEDBACK pinshortedtoGND, unlessotherwisespecified.LimitsinstandardtypefaceareforTJ = 25°C; limitsinboldfacetypeapplyovertheOperating Temperature Range . LM613MLM613AM LM613IParameter TestConditions Typ (1) LM613AI UnitsLM613CLimits(2) Limits(2) COMPARATORS VOS OffsetVoltage 4V ≤ V+ ≤ 36V (32V forLM613C), 1.0 3.0 5.0 mV (Max) R L = 15 kΩ 2.0 6.0 7.0 mV (Max) VOS OffsetVoltage 0V ≤ VCM ≤ 36V 1.0 3.0 5.0 mV (Max) VCM overVCM V+ = 36V,(32V forLM613C) 1.5 6.0 7.0 mV (Max) VOS AverageOffset 15 μV/°C ΔT VoltageDrift (Max) IB InputBiasCurrent 5 25 35 nA (Max) 8 30 40 nA (Max) IOS InputOffsetCurrent 0.2 4 4 nA (Max) 0.3 5 5 nA (Max) AV VoltageGain R L = 10 kΩ to36V (32V forLM613C) 500 V/mV 2V ≤ VOUT ≤ 27V 100 V/mV tr LargeSignal V+ IN = 1.4V,V− IN = TTL Swing, 1.5 μs Response Time R L = 5.1kΩ 2.0 μs ISINK OutputSinkCurrent V+ IN = 0V,V− IN = 1V, 20 10 10 mA (Min) VOUT = 1.5V 13 8 8 mA (Min) VOUT = 0.4V 2.8 1.0 0.8 mA (Min) 2.4 0.5 0.5 mA (Min) ILEAK OutputLeakage V+ IN = 1V,V− IN = 0V, 0.1 10 10 μA (Max) Current VOUT = 36V (32V forLM613C) 0.2 μA (Max) VOLTAGE REFERENCE VR VoltageReference See (4) 1.244 1.2365 1.2191 V (Min) 1.2515 1.2689 V (Max) (±0.6%) (±2%) ΔVR AverageTemp. Drift See (5) 10 80 150 ppm/°C ΔT (Max) ΔVR Hysteresis See (6) 3.2 μV/°C ΔTJ ΔVR VR Change VR(100 μA) − VR(17 μA) 0.05 1 1 mV (Max) ΔIR withCurrent 0.1 1.1 1.1 mV (Max) VR(10 mA) − VR(100 μA) 1.5 5 5 mV (Max) See (7) 2.0 5.5 5.5 mV (Max) ΔVR(100→17 μA)/83μA 0.6 13 13 Ω (Max) VR VR Change VR(Vro = Vr)− VR(Vro = 6.3V) 2.5 7 7 mV (Max) ΔVRO withHighVRO (5.06Vbetween Anode and 2.8 10 10 mV (Max) FEEDBACK) VR VR Change with VR(V+ = 5V) − VR(V+ = 36V) 0.1 1.2 1.2 mV (Max) ΔV+ VANODE Change (V+ = 32V forLM613C) 0.1 1.3 1.3 mV (Max) VR(V+ = 5V) − VR(V+ = 3V) 0.01 1 1 mV (Max) 0.01 1.5 1.5 mV (Max) IFB FEEDBACK Bias VANODE ≤ VFB ≤ 5.06V 22 35 50 nA (Max) Current 29 40 55 nA (Max) (4) VR istheCathode-to-feedbackvoltage,nominally1.244V. (5) Averagereferencedriftiscalculatedfromthemeasurement ofthereferencevoltageat25°C and atthetemperatureextremes.The drift, inppm/°C, is106•ΔVR /(VR[25°C]•ΔTJ),where ΔVR isthelowestvaluesubtractedfromthehighest,VR[25°C] isthevalueat25°C, and ΔTJ is thetemperaturerange.Thisparameterisensuredby designand sample testing. (6) Hysteresisisthechange inVR caused by a change inTJ,afterthereferencehas been “dehysterized”.To dehysterizethereference;that isminimizethehysteresistothetypicalvalue,itsjunctiontemperatureshouldbe cycledinthefollowingpattern,spiralingintoward (7) Low contactresistanceisrequiredforaccuratemeasurement. Copyright© 2000–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 5 ProductFolderLinks:LM613
SNOSC11B –AUGUST 2000–REVISED MARCH 2013 www.ti.com ElectricalCharacteristics(continued) These specificationsapplyforV− = GND = 0V,V+ = 5V,VCM = VOUT = 2.5V,IR = 100 μA,FEEDBACK pinshortedtoGND, unlessotherwisespecified.LimitsinstandardtypefaceareforTJ = 25°C; limitsinboldfacetypeapplyovertheOperating Temperature Range . LM613MLM613AM LM613IParameter TestConditions Typ (1) LM613AI UnitsLM613CLimits(2) Limits(2) en VR Noise 10 Hz to10 kHz, 30 μVRMSVRO = VR SimplifiedSchematic Diagrams Figure4. Op Amp
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www.ti.com SNOSC11B –AUGUST 2000–REVISED MARCH 2013 Figure5. Comparator Figure6. Reference/Bias Copyright© 2000–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 7 ProductFolderLinks:LM613
SNOSC11B –AUGUST 2000–REVISED MARCH 2013 www.ti.com TYPICAL PERFORMANCE CHARACTERISTICS (Reference) TJ = 25°C, FEEDBACK pinshortedtoV− = 0V,unlessotherwisenoted ReferenceVoltagevs Temp. ReferenceVoltageDrift Figure7. Figure8. AcceleratedReference ReferenceVoltagevs VoltageDriftvs Time Currentand Temperature Figure9. Figure10. ReferenceVoltagevs ReferenceVoltagevs Currentand Temperature ReferenceCurrent Figure11. Figure12.
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www.ti.com SNOSC11B –AUGUST 2000–REVISED MARCH 2013 TYPICAL PERFORMANCE CHARACTERISTICS (Reference)(continued) TJ = 25°C, FEEDBACK pinshortedtoV− = 0V,unlessotherwisenoted ReferenceVoltagevs ReferenceAC ReferenceCurrent StabilityRange Figure13. Figure14. FEEDBACK Currentvs FEEDBACK Currentvs FEEDBACK-to-Anode Voltage FEEDBACK-to-Anode Voltage Figure15. Figure16. ReferenceNoise Voltage ReferenceSmall-Signal vs Frequency Resistancevs Frequency Figure17. Figure18. Copyright© 2000–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 9 ProductFolderLinks:LM613
SNOSC11B –AUGUST 2000–REVISED MARCH 2013 www.ti.com TYPICAL PERFORMANCE CHARACTERISTICS (Reference)(continued) TJ = 25°C, FEEDBACK pinshortedtoV− = 0V,unlessotherwisenoted ReferenceVoltagewith ReferencePower-Up Time FEEDBACK VoltageStep Figure19. Figure20. ReferenceStep Response ReferenceVoltagewith for100 μA ∼∼ 10 mA 100 ∼∼ 12 μA CurrentStep CurrentStep Figure21. Figure22. ReferenceVoltageChange ReferenceChange vs withSupply VoltageStep Common-Mode Voltage Figure23. Figure24.
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www.ti.com SNOSC11B –AUGUST 2000–REVISED MARCH 2013 TYPICAL PERFORMANCE CHARACTERISTICS (Op Amps) V+ = 5V,V− = GND = 0V,VCM = V+/2,VOUT = V+/2,TJ = 25°C, unlessotherwisenoted InputCommon-Mode VOS vs Junction VoltageRange vs Temperature Temperature Figure25. Figure26. InputBias Currentvs Large-Signal Common-Mode Voltage Step Response Figure27. Figure28. Output VoltageSwing Output Source Currentvs vs Temp. and Current Output Voltageand Temp. Figure29. Figure30. Copyright© 2000–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 11 ProductFolderLinks:LM613
SNOSC11B –AUGUST 2000–REVISED MARCH 2013 www.ti.com TYPICAL PERFORMANCE CHARACTERISTICS (Op Amps) (continued) V+ = 5V,V− = GND = 0V,VCM = V+/2,VOUT = V+/2,TJ = 25°C, unlessotherwisenoted Output Sink Currentvs Output Swing, Output Voltage Large Signal Figure31. Figure32. Output Impedance vs Small SignalPulse Frequency and Gain Response vs Temp. Figure33. Figure34. Small-SignalPulse Op Amp VoltageNoise Response vs Load vs Frequency Figure35. Figure36.
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www.ti.com SNOSC11B –AUGUST 2000–REVISED MARCH 2013 TYPICAL PERFORMANCE CHARACTERISTICS (Op Amps) (continued) V+ = 5V,V− = GND = 0V,VCM = V+/2,VOUT = V+/2,TJ = 25°C, unlessotherwisenoted Op Amp CurrentNoise Small-SignalVoltageGain vs vs Frequency Frequency and Temperature Figure37. Figure38. Small-SignalVoltageGain FollowerSmall-Signal vs Frequency and Load Frequency Response Figure39. Figure40. Common-Mode Input Power Supply Current VoltageRejectionRatio vs Power Supply Voltage Figure41. Figure42. Copyright© 2000–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 13 ProductFolderLinks:LM613
SNOSC11B –AUGUST 2000–REVISED MARCH 2013 www.ti.com TYPICAL PERFORMANCE CHARACTERISTICS (Op Amps) (continued) V+ = 5V,V− = GND = 0V,VCM = V+/2,VOUT = V+/2,TJ = 25°C, unlessotherwisenoted PositivePower Supply NegativePower Supply VoltageRejectionRatio VoltageRejectionRatio Figure43. Figure44. InputOffsetCurrentvs Slew Rate vs Temperature JunctionTemperature Figure45. Figure46. InputBias Currentvs JunctionTemperature Figure47.
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www.ti.com SNOSC11B –AUGUST 2000–REVISED MARCH 2013 TYPICAL PERFORMANCE CHARACTERISTICS (Comparators) InputBias Currentvs Output Sink Current Common-Mode Voltage Figure48. Figure49. Comparator Response Times— Comparator Response Times— InvertingInput,PositiveTransition InvertingInput,NegativeTransition Figure50. Figure51. Comparator Response Times— Comparator Response Times— Non-InvertingInput,PositiveTransition Non-InvertingInput,NegativeTransition Figure52. Figure53. Copyright© 2000–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 15 ProductFolderLinks:LM613
SNOSC11B –AUGUST 2000–REVISED MARCH 2013 www.ti.com TYPICAL PERFORMANCE CHARACTERISTICS (Comparators)(continued) Comparator Response Times— Comparator Response Times— InvertingInput,PositiveTransition InvertingInput,NegativeTransition Figure54. Figure55. Comparator Response Times— Comparator Response Times— Non-InvertingInput,PositiveTransition Non-InvertingInput,NegativeTransition Figure. Figure56.
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www.ti.com SNOSC11B –AUGUST 2000–REVISED MARCH 2013 TYPICAL PERFORMANCE DISTRIBUTIONS Average VOS Drift Average VOS Drift MilitaryTemperature Range IndustrialTemperature Range Figure57. Figure58. Average VOS Drift Average IOS Drift Commercial Temperature Range MilitaryTemperature Range Figure59. Figure60. Average IOS Drift Op Amp Voltage IndustrialTemperature Range Noise Distribution Figure61. Figure62. Copyright© 2000–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 17 ProductFolderLinks:LM613
SNOSC11B –AUGUST 2000–REVISED MARCH 2013 www.ti.com TYPICAL PERFORMANCE DISTRIBUTIONS (continued) Average IOS Drift Op Amp Current Commercial Temperature Range Noise Distribution Figure63. Figure64. VoltageReferenceBroad-Band Noise Distribution Figure65.
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www.ti.com SNOSC11B –AUGUST 2000–REVISED MARCH 2013
APPLICATION INFORMATION
The voltagereferenceisof a shunt regulatortopologythatmodels as a simplezener diode.With currentIr flowinginthe “forward” directionthereisthe familiardiodetransferfunction.Ir flowinginthe reversedirection forcesthereferencevoltagetobe developedfromcathodetoanode.The cathodemay swingfroma diodedrop below V− tothereferencevoltageor totheavalanchevoltageoftheparallelprotectiondiode,nominally7V. A 6.3VreferencewithV+ = 3V isallowed. Figure66. VoltageAssociatedwithReference (currentsource Ir isexternal) The referenceequivalentcircuitrevealshow Vr is held at the constant1.2V by feedback,and how the FEEDBACK pinpasseslittlecurrent. To generatetherequiredreversecurrent,typicallya resistorisconnectedfroma supplyvoltagehigherthanthe referencevoltage.Varyingthatvoltage,and so varyingIr,has smalleffectwiththeequivalentseriesresistanceof lessthanan ohm atthehighercurrents.Alternatively,an activecurrentsource,such as theLM134 series,may generateIr. Figure67. ReferenceEquivalentCircuit Figure68. 1.2VReference Copyright© 2000–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 19 ProductFolderLinks:LM613
SNOSC11B –AUGUST 2000–REVISED MARCH 2013 www.ti.com Capacitorsinparallelwiththe referenceare allowed.See the ReferenceAC StabilityRange typicalcurvefor capacitancevalues— from20 μA to3 mA any capacitorvalueisstable.Withthereference'swide stabilityrange withresistiveand capacitiveloads,a widerangeofRC filtervalueswillperformnoisefiltering. AdjustableReference The FEEDBACK pinallowsthereferenceoutputvoltage,Vro,tovaryfrom1.24V to6.3V.The referenceattempts toholdVr at1.24V.IfVr isabove 1.24V,thereferencewillconductcurrentfromCathode toAnode; FEEDBACK currentalwaysremainslow.IfFEEDBACK isconnectedtoAnode, thenVro = Vr = 1.24V.For highervoltages FEEDBACK isheldata constantvoltageabove Anode— say 3.76VforVro = 5V.Connectinga resistoracrossthe constantVr generatesa currentI=R1/Vr flowingfrom Cathode intoFEEDBACK node. A Theveninequivalent 3.76V isgeneratedfrom FEEDBACK toAnode withR2=3.76/I.Keep Igreaterthanone thousandtimeslarger thanFEEDBACK biascurrentfor<0.1% error— I≥32 μA forthemilitarygradeoverthemilitarytemperaturerange (I≥5.5μA fora 1% untrimmederrorfora commercialpart). Figure69. Thevenin EquivalentofReference with5V Output R1 = Vr/I= 1.24/32μ = 39k Figure70. ResistorsR1 and R2 Program ReferenceOutput Voltagetobe 5V UnderstandingthatVr isfixedand thatvoltagesources,resistors,and capacitorsmay be tiedtotheFEEDBACK pin,a rangeofVr temperaturecoefficientsmay be synthesized.
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www.ti.com SNOSC11B –AUGUST 2000–REVISED MARCH 2013 Figure71. Output Voltagehas NegativeTemperature Coefficient(TC)ifR2 has NegativeTC Figure72. Output Voltagehas PositiveTC ifR1 has NegativeTC Figure73. Diode inSerieswithR1 Causes VoltageAcross R1 and R2 tobe ProportionaltoAbsolute Temperature (PTAT) Connectinga resistoracrossCathode-to-FEEDBACK createsa 0 TC currentsource,buta rangeofTCs may be synthesized. Copyright© 2000–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 21 ProductFolderLinks:LM613
SNOSC11B –AUGUST 2000–REVISED MARCH 2013 www.ti.com I= Vr/R1= 1.24/R1 Figure74. CurrentSource isProgrammed by R1 Figure75. Proportional-to-Absolute-TemperatureCurrentSource Figure76. Negative-TCCurrentSource ReferenceHysteresis The referencevoltagedepends,slightly,on the thermalhistoryof the die.Competitivemicro-powerproducts vary— always check the data sheet forany given device.Do not assume thatno specificationmeans no hysteresis.
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www.ti.com SNOSC11B –AUGUST 2000–REVISED MARCH 2013 OPERATIONAL AMPLIFIERS AND COMPARATORS Any amp, comparator,or the referencemay be biasedinany way withno effecton the othersectionsof the LM613, exceptwhen a substratediodeconducts,see (1) inElectricalCharacteristics. For example,one amp inputmay be outsidethecommon-mode range,anotheramp may be operatingas a comparator,and allother sectionsmay have allterminalsfloatingwithno effecton the others.Tyinginvertinginputto outputand non- invertinginputto V− on unused amps ispreferred.Unused comparatorsshouldhave non-invertinginputand outputtiedtoV+,and invertinginputtiedtoV−.Choosingoperatingpointsthatcause oscillation,such as driving toolargea capacitiveload,isbestavoided. Op Amp Output Stage These op amps, liketheLM124 series,have flexibleand relativelywide-swingoutputstages.There are simple rulestooptimizeoutputswing,reducecross-overdistortion,and optimizecapacitivedrivecapability: 1. OutputSwing:Unloaded,the 42 μA pull-downwillbringthe outputwithin300 mV of V− over the military temperaturerange.Ifmore than42 μA isrequired,a resistorfrom outputtoV− willhelp.Swing acrossany loadmay be improvedslightlyiftheloadcan be tiedtoV+,atthecostofpoorersinkingopen-loopvoltage gain. 2. Cross-OverDistortion:The LM613 has lowercross-overdistortion(a 1 VBE deadband versus3 VBE forthe LM124), and increasedslew rateas shown inthecharacteristiccurves.A resistorpull-upor pull-downwill forceclass-Aoperationwithonly the PNP or NPN outputtransistorconducting,eliminatingcross-over distortion. 3. CapacitiveDrive:Limitedby theoutputpolecaused by theoutputresistancedrivingcapacitiveloads,a pull- down resistorconducting1 mA ormore reducestheoutputstageNPN re untiltheoutputresistanceisthatof thecurrentlimit25Ω.200 pF may thenbe drivenwithoutoscillation. Comparator Output Stage The comparators,likethe LM139 series,have open-collectoroutputstages.A pull-upresistormust be added fromeach outputpintoa positivevoltagefortheoutputtransistortoswitchproperly.When theoutputtransistor isOFF, theoutputvoltagewillbe thisexternalpositivevoltage. For theoutputvoltagetobe under theTTL-lowvoltagethresholdwhen theoutputtransistorisON, theoutput currentmust be lessthan8 mA (overtemperature).Thisimpactstheminimum valueofpull-upresistor. The offsetvoltagemay increasewhen theoutputvoltageislow and theoutputcurrentislessthan30 μA. Thus, forbestaccuracy,thepull-upresistorvalueshouldbe lowenough toallowtheoutputtransistortosinkmore than 30 μA. Op Amp and Comparator InputStage The lateralPNP inputtransistors,unlikethoseof most op amps, have BV EBO equalto the absolutemaximum supplyvoltage.Also,theyhave no diodeclamps to the positivesupplynor acrossthe inputs.These features make the inputslooklikehigh impedances to inputsourcesproducinglargedifferentialand common-mode voltages. (1) Absolutemaximum ratingsindicatelimitsbeyond whichdamage tothecomponent may occur.Electricalspecificationsdo notapply when operatingthedevicebeyond itsratedoperatingconditions. Copyright© 2000–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 23 ProductFolderLinks:LM613
SNOSC11B –AUGUST 2000–REVISED MARCH 2013 www.ti.com TypicalApplications Figure77. High Current,High VoltageSwitch Figure78. High Speed LevelShifter.Response Time isApproximately 1.5μs,Where Output isEitherApproximately+V or −V. *10kmust be low t.c.trimpot Figure79. UltraLow Noise,10.00VReference.TotalOutput Noise isTypically14 μVRMS .
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www.ti.com SNOSC11B –AUGUST 2000–REVISED MARCH 2013 Figure80. Basic Comparator Figure81. Basic Comparator withExternalStrobe Figure82. Wide-InputRange Comparator withTTL Output Figure83. Comparator with Hysteresis(ΔVH = +V(1k/1M)) Copyright© 2000–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 25 ProductFolderLinks:LM613
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REVISION HISTORY
Changes from RevisionA (March 2013)toRevisionB Page
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www.ti.com 1-Nov-2013 Addendum-Page 1 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Drawing Pins Package Qty Eco Plan (2) Lead/Ball Finish (6) MSL Peak Temp (3) Op Temp (°C) Device Marking (4/5) Samples LM613IWM NRND SOIC DW 16 45 TBD Call TI Call TI -40 to 85 LM613IWM LM613IWM/NOPB ACTIVE SOIC DW 16 45 Green (RoHS & no Sb/Br) CU SN Level-3-260C-168 HR -40 to 85 LM613IWM LM613IWMX NRND SOIC DW 16 1000 TBD Call TI Call TI -40 to 85 LM613IWM LM613IWMX/NOPB ACTIVE SOIC DW 16 1000 Green (RoHS & no Sb/Br) CU SN Level-3-260C-168 HR -40 to 85 LM613IWM (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability information and additional product content details. TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above. Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material) (3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. (4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device. (5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation of the previous line and the two combined represent the entire Device Marking for that device. (6) Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish value exceeds the maximum column width. Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
www.ti.com 1-Nov-2013 Addendum-Page 2 continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release. In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
*All dimensions are nominal Device Package Type Package Drawing Pins SPQ Reel Diameter (mm) Reel Width W1 (mm) (mm) (mm) (mm) (mm) W (mm) Pin1 Quadrant PACKAGE MATERIALS INFORMATION www.ti.com 26-Mar-2013 Pack Materials-Page 1
*All dimensions are nominal Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) LM613IWMX SOIC DW 16 1000 367.0 367.0 38.0 LM613IWMX/NOPB SOIC DW 16 1000 367.0 367.0 38.0 PACKAGE MATERIALS INFORMATION www.ti.com 26-Mar-2013 Pack Materials-Page 2
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