LM613IWM

LM613 NSC | Alldatasheet

Document overview

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Technical content

Features

n Low operating current (Op Amp): 300 µA n Wide supply voltage range: 4V to 36V n Wide common-mode range: V− to (V+ − 1.8V) n Wide differential input voltage:±36V n Available in plastic package rated for Military Temp. Range Operation REFERENCE n Adjustable output voltage: 1.2V to 6.3V n Tight initial tolerance available:±0.6% n Wide operating current range: 17 µA to 20 mA n Tolerant of load capacitance

Applications

n Transducer bridge driver n Process and mass flow control systems n Power supply voltage monitor n Buffered voltage references for A/D’s Connection Diagrams Super-Block™ is a trademark of National Semiconductor Corporation. DS009226-1 Top View E Package Pinout DS009226-48 June 1998 LM613 Dual Operational Amplifiers, Dual Comparators, and Adjustable Reference © 1999 National Semiconductor Corporation DS009226 www.national.com

Ordering Information

Tolerance & VOS Temperature Range Package NSC DrawingMilitary Industrial Commercial ±0.6% LM613AMN LM613AIN — 16-Pin N16E 80 ppm/˚C Max. Molded DIP VOS ≤ 3.5 mV LM613AMJ/883 — — 16-Pin J16A (Note 14) Ceramic DIP LM613AME/883 — — 20-Pin E20A (Note 14) LCC ±2.0% LM613MN LM613IN LM613CN 16-Pin N16E 150 ppm/˚C Max. Molded DIP VOS ≤ 5.0 mV Max. — LM613IWM 16-Pin Wide M16B Surface Mount www.national.com 2

Absolute Maximum Ratings(Note 1) If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/ Distributors for availability and specifications. Voltage on Any Pin Except V R (referred to V−pin) (Note 2) (Note 3) 36V (Max) −0.3V (Min) Current through Any Input Pin R Pin ±20 mA Differential Input Voltage Military and Industrial Commercial ±36V ±32V Storage Temperature Range −65˚C ≤ TJ ≤ +150˚C Maximum Junction Temp.(Note 4) 150˚C Thermal Resistance, Junction-to-Ambient (Note 5) N Package 100˚C/W 150˚C/W Soldering Information (10 Sec.) N Package 260˚C 220˚C ESD Tolerance (Note 6) ±1k V Operating Temperature Range LM613AI, LM613BI: −40˚C to +85˚C LM613AM, LM613M: −55˚C to +125˚C LM613C: 0˚C ≤ T J ≤ +70˚C

Electrical Characteristics

These specifications apply for V− = GND = 0V, V+ = 5V, VCM = VOUT = 2.5V, IR = 100 µA, FEEDBACK pin shorted to GND, unless otherwise specified. Limits in standard typeface are for TJ = 25˚C; limits inboldface typeapply over theOperating Temperature Range. LM613AM LM613M Typical LM613AI LM613I Symbol Parameter Conditions (Note 7) Limits LM613C Units (Note 8) Limits (Note 8) IS Total Supply Current R LOAD = ∞ , 450 940 1000 µA (Max) 4V ≤ V+ ≤ 36V (32V for LM613C) 550 1000 1070 µA (Max) VS Supply Voltage Range 2.2 2.8 2.8 V (Min) 2.9 3 3 V (Min) 46 36 32 V (Max) 43 36 32 V (Max) OPERATIONAL AMPLIFIERS V OS1 VOS Over Supply 4V ≤ V+ ≤ 36V 1.5 3.5 5.0 mV (Max) (4V ≤ V+ ≤ 32V for LM613C) 2.0 6.0 7.0 mV (Max) VOS2 VOS Over VCM VCM = 0V through VCM = 1.0 3.5 5.0 mV (Max) Average VOS Drift (Note 8) 15 µV/˚C (Max) IB Input Bias Current 10 25 35 nA (Max) 11 30 40 nA (Max) IOS Input Offset Current 0.2 4 4 nA (Max) 0.3 5 5 nA (Max) Average Offset Current 4 pA/˚C R IN Input Resistance Differential 1000 M Ω C IN Input Capacitance Common-Mode 6 pF en Voltage Noise f = 100 Hz, Input Referred 74 In Current Noise f = 100 Hz, Input Referred 58 CMRR Common-Mode V + = 30V, 0V≤ VCM ≤ (V+ − 1.8V) 95 80 75 dB (Min) Rejection Ratio CMRR = 20 log (ΔVCM /ΔVOS ) 90 75 70 dB (Min) PSRR Power Supply 4V ≤ V+ ≤ 30V, VCM = V+/2, 110 80 75 dB (Min) Rejection Ratio PSRR = 20 log (ΔV+/VOS ) 100 75 70 dB (Min) www.national.com3

Electrical Characteristics(Continued) These specifications apply for V− = GND = 0V, V+ = 5V, VCM = VOUT = 2.5V, IR = 100 µA, FEEDBACK pin shorted to GND, unless otherwise specified. Limits in standard typeface are for TJ = 25˚C; limits inboldface typeapply over theOperating Temperature Range. LM613AM LM613M Typical LM613AI LM613I Symbol Parameter Conditions (Note 7) Limits LM613C Units (Note 8) Limits (Note 8) OPERATIONAL AMPLIFIERS A V Open Loop R L = 10 kΩ to GND, V+ = 30V, 500 100 94 V/mV Voltage Gain 5V ≤ VOUT ≤ 25V 50 40 40 (Min) SR Slew Rate V + = 30V (Note 9) 0.70 0.55 0.50 V/µs 0.65 0.45 0.45 GBW Gain Bandwidth C L = 50 pF 0.8 MHz

0.5 MHz

VO1 Output Voltage R L = 10 kΩ to GND, V + − 1.4 V + − 1.7 V + − 1.8 V (Min) Swing High V + = 36V (32V for LM613C) V+ − 1.6 V + − 1.9 V + − 1.9 V (Min) VO2 Output Voltage R L = 10 kΩ to V+,V − + 0.8 V − + 0.9 V − + 0.95 V (Max) Swing Low V + = 36V (32V for LM613C) V− + 0.9 V − + 1.0 V − + 1.0 V (Max) IOUT Output Source Current VOUT = 2.5V, V+ IN = 0V, 25 20 16 mA (Min) IN = −0.3V 15 13 13 mA (Min) ISINK Output Sink Current V OUT = 1.6V, V+ IN = 0V, 17 14 13 mA (Min) IN = 0.3V 98 8 mA (Min) ISHORT Short Circuit Current VOUT = 0V,V+ IN = 3V, 30 50 50 mA (Max) IN = 2V 40 60 60 mA (Max) VOUT = 5V, V+ IN = 2V, 30 60 70 mA (Max) IN = 3V 32 80 90 mA (Max) COMPARATORS V OS Offset Voltage 4V ≤ V+ ≤ 36V (32V for LM613C), 1.0 3.0 5.0 mV (Max) R L = 15 kΩ 2.0 6.0 7.0 mV (Max) Offset Voltage 0V ≤ VCM ≤ 36V 1.0 3.0 5.0 mV (Max) over VCM V+ = 36V, (32V for LM613C) 1.5 6.0 7.0 mV (Max) Average Offset 15 µV/˚C Voltage Drift (Max) IB Input Bias Current 5 25 35 nA (Max) 83 0 4 0 nA (Max) IOS Input Offset Current 0.2 4 4 nA (Max) 0.3 5 5 nA (Max) AV Voltage Gain R L = 10 kΩ to 36V (32V for LM613C)

500 V/mV

2V ≤ VOUT ≤ 27V 100 V/mV tr Large Signal V + IN = 1.4V, V− IN = TTL Swing, 1.5 µs Response Time R L = 5.1 kΩ 2.0 µs ISINK Output Sink Current V + IN = 0V, V− IN = 1V, 20 10 10 mA (Min) VOUT = 1.5V 13 8 8 mA (Min) VOUT = 0.4V 2.8 1.0 0.8 mA (Min) 2.4 0.5 0.5 mA (Min) ILEAK Output Leakage V + IN = 1V, V− IN = 0V, 0.1 10 10 µA (Max) Current V OUT = 36V (32V for LM613C) 0.2 µA (Max) VOLTAGE REFERENCE V R Voltage Reference (Note 10) 1.244 1.2365 1.2191 V (Min) www.national.com 4

Electrical Characteristics(Continued) These specifications apply for V− = GND = 0V, V+ = 5V, VCM = VOUT = 2.5V, IR = 100 µA, FEEDBACK pin shorted to GND, unless otherwise specified. Limits in standard typeface are for TJ = 25˚C; limits inboldface typeapply over theOperating Temperature Range. LM613AM LM613M Typical LM613AI LM613I Symbol Parameter Conditions (Note 7) Limits LM613C Units (Note 8) Limits (Note 8) VOLTAGE REFERENCE 1.2515 1.2689 V (Max) (±0.6% )( ±2% ) Average Temp. Drift (Note 11) 10 80 150 ppm/˚C (Max) Hysteresis (Note 12) 3.2 µV/˚C VR Change V R(100 µA)−V R(17 µA) 0.05 1 1 mV (Max) with Current 0.1 1.1 1.1 mV (Max) VR(10 mA) −V R(100 µA) 1.5 5 5 mV (Max) (Note 13) 2.0 5.5 5.5 mV (Max) ΔVR(100→ 17 µA)/83 µA 0.6 13 13 Ω (Max) VR Change V R(Vro = Vr)−V R(Vro = 6.3V) 2.5 7 7 mV (Max) with High VRO (5.06V between Anode and 2.8 10 10 mV (Max) FEEDBACK) VR Change with V R(V+ = 5V) −V R(V+ = 36V) 0.1 1.2 1.2 mV (Max) VANODE Change (V + = 32V for LM613C) 0.1 1.3 1.3 mV (Max) VR(V+ = 5V) −V R(V+ = 3V) 0.01 1 1 mV (Max) 0.01 1.5 1.5 mV (Max) IFB FEEDBACK Bias V ANODE ≤ VFB ≤ 5.06V 22 35 50 nA (Max) Current 29 40 55 nA (Max) en VR Noise 10 Hz to 10 kHz, 30 µV RMS VRO = VR Note 1:Absolute maximum ratings indicate limits beyond which damage to the component may occur. Electrical specifications do not apply when operating the de- vice beyond its rated operating conditions. Note 2:Input voltage above V+ is allowed. As long as one input pin voltage remains inside the common-mode range, the comparator will deliver the correct output. Note 3:More accurately, it is excessive current flow, with resulting excess heating, that limits the voltages on all pins. When any pin is pulled a diode drop below V−, a parasitic NPN transistor turns ON. No latch-up will occur as long as the current through that pin remains below the Maximum Rating. Operation is undefined and unpredictable when any parasitic diode or transistor is conducting. Note 4:Simultaneous short-circuit of multiple comparators while using high supply voltages may force junction temperature above maximum, and thus shouldnot be continuous. Note 5:Junction temperature may be calculated using TJ = TA +P D θJA. The given thermal resistance is worst-case for packages in sockets in still air. For packages soldered to copper-clad board with dissipation from one comparator or reference output transistor, nominalθJA is 90˚C/W for the N package, and 135˚C/W for the WM package. Note 6:Human body model, 100 pF discharged through a 1.5 kΩ resistor. Note 7:Typical values in standard typeface are for TJ = 25˚C; values inbold face typeapply for the full operating temperature range. These values represent the most likely parametric norm. Note 8:All limits are guaranteed at room temperature (standard type face) or at operating temperature extremes(bold type face). Note 9:Slew rate is measured with the op amp in a voltage follower configuration. For rising slew rate, the input voltage is driven from 5V to 25V, and the output voltage transition is sampled at 10V and@ 20V. For falling slew rate, the input voltage is driven from 25V to 5V, and the output voltage transition is sampled at 20V and 10V. Note 10:VR is the Cathode-to-feedback voltage, nominally 1.244V. Note 11:Average reference drift is calculated from the measurement of the reference voltage at 25˚C and at the temperature extremes. The drift, in ppm/˚C, is 106•ΔVR /(VR[25˚C]•ΔTJ), whereΔVR is the lowest value subtracted from the highest, VR[25˚C]is the value at 25˚C, andΔTJ is the temperature range. This parameter is guaranteed by design and sample testing. Note 12:Hysteresis is the change in VR caused by a change in TJ, after the reference has been “dehysterized”. To dehysterize the reference; that is minimize the hysteresis to the typical value, its junction temperature should be cycled in the following pattern, spiraling in toward 25˚C: 25˚C, 85˚C, −40˚C, 70˚C, 0˚C, 25˚C. Note 13:Low contact resistance is required for accurate measurement. www.national.com5

Electrical Characteristics(Continued) Note 14:A military RETS 613AMX electrical test specification is available on request. The Military screened parts can also be procured as a Standard MilitaryDraw- ing. Simplified Schematic Diagrams Op Amp DS009226-2 Comparator DS009226-3 www.national.com 6

Simplified Schematic Diagrams(Continued) Typical Performance Characteristics (Reference)TJ = 25˚C, FEEDBACK pin shorted to V− = 0V, unless otherwise noted Reference/Bias DS009226-4 Reference Voltage vs Temp. DS009226-49 Reference Voltage Drift DS009226-50 Accelerated Reference Voltage Drift vs Time DS009226-51 Reference Voltage vs Current and Temperature DS009226-52 Reference Voltage vs Current and Temperature DS009226-53 Reference Voltage vs Reference Current DS009226-54 www.national.com7

Typical Performance Characteristics (Reference)TJ = 25˚C, FEEDBACK pin shorted to V− = 0V, unless otherwise noted (Continued) Reference Voltage vs Reference Current DS009226-55 Reference AC Stability Range DS009226-56 FEEDBACK Current vs FEEDBACK-to-Anode Voltage DS009226-57 FEEDBACK Current vs FEEDBACK-to-Anode Voltage DS009226-58 Reference Noise Voltage vs Frequency DS009226-59 Reference Small-Signal Resistance vs Frequency DS009226-60 Reference Power-Up Time DS009226-61 Reference Voltage with FEEDBACK Voltage Step DS009226-62 Reference Voltage with 100 z12 µA Current Step DS009226-63 www.national.com 8

Typical Performance Characteristics (Reference)TJ = 25˚C, FEEDBACK pin shorted to V− = 0V, unless otherwise noted (Continued) Typical Performance Characteristics (Op Amps)V+ = 5V, V− = GND = 0V, VCM = V+/2, VOUT = V+/2, TJ = 25˚C, unless otherwise noted Reference Step Response for 100 µAz10 mA Current Step DS009226-64 Reference Voltage Change with Supply Voltage Step DS009226-65 Reference Change vs Common-Mode Voltage DS009226-66 Input Common-Mode Voltage Range vs Temperature DS009226-67 VOS vs Junction Temperature DS009226-68 Input Bias Current vs Common-Mode Voltage DS009226-69 Large-Signal Step Response DS009226-70 Output Voltage Swing vs Temp. and Current DS009226-71 www.national.com9

Typical Performance Characteristics (Op Amps)V+ = 5V, V− = GND = 0V, VCM = V+/2, VOUT = V+/2, TJ = 25˚C, unless otherwise noted (Continued) Output Source Current vs Output Voltage and Temp. DS009226-72 Output Sink Current vs Output Voltage DS009226-73 Output Swing, Large Signal DS009226-74 Output Impedance vs Frequency and Gain DS009226-75 Small Signal Pulse Response vs Temp. DS009226-76 Small-Signal Pulse Response vs Load DS009226-77 Op Amp Voltage Noise vs Frequency DS009226-78 Op Amp Current Noise vs Frequency DS009226-79 Small-Signal Voltage Gain vs Frequency and Temperature DS009226-80 www.national.com 10

Typical Performance Characteristics (Op Amps)V+ = 5V, V− = GND = 0V, VCM = V+/2, VOUT = V+/2, TJ = 25˚C, unless otherwise noted (Continued) Small-Signal Voltage Gain vs Frequency and Load DS009226-81 Follower Small-Signal Frequency Response DS009226-82 Common-Mode Input Voltage Rejection Ratio DS009226-83 Power Supply Current vs Power Supply Voltage DS009226-84 Positive Power Supply Voltage Rejection Ratio DS009226-85 Negative Power Supply Voltage Rejection Ratio DS009226-86 Slew Rate vs Temperature DS009226-87 Input Offset Current vs Junction Temperature DS009226-88 Input Bias Current vs Junction Temperature DS009226-89 www.national.com11

Typical Performance Characteristics (Comparators) Output Sink Current DS009226-10 Input Bias Current vs Common-Mode Voltage DS009226-11 Comparator Response Times — Inverting Input, Positive Transition DS009226-12 Comparator Response Times — Inverting Input, Negative Transition DS009226-13 Comparator Response Times — Non-Inverting Input, Positive Transition DS009226-14 Comparator Response Times — Non-Inverting Input, Negative Transition DS009226-15 www.national.com 12

Typical Performance Characteristics (Comparators)(Continued) Typical Performance Distributions Comparator Response Times — Inverting Input, Positive Transition DS009226-16 Comparator Response Times — Inverting Input, Negative Transition DS009226-17 Comparator Response Times — Non-Inverting Input, Positive Transition DS009226-18 Comparator Response Times — Non-Inverting Input, Negative Transition DS009226-19 Average VOS Drift Military Temperature Range DS009226-20 Average VOS Drift Industrial Temperature Range DS009226-21 www.national.com13

Typical Performance Distributions(Continued) Average VOS Drift Commercial Temperature Range DS009226-22 Average IOS Drift Military Temperature Range DS009226-23 Average IOS Drift Industrial Temperature Range DS009226-24 Op Amp Voltage Noise Distribution DS009226-27 Average IOS Drift Commercial Temperature Range DS009226-25 Op Amp Current Noise Distribution DS009226-28 www.national.com 14

sume that no specification means no hysteresis. such as driving too large a capacitive load, is best avoided.

1. Output Swing: Unloaded, the 42 µA pull-down will bring

poorer sinking open-loop voltage gain.

1. Cross-Over Distortion: The LM613 has lower cross-over

sistor conducting, eliminating cross-over distortion.

1. Capacitive Drive: Limited by the output pole caused by

put voltage will be this external positive voltage. pacts the minimum value of pull-up resistor. allow the output transistor to sink more than 30 µA. differential and common-mode voltages. FIGURE 12. High Current, High Voltage Switch

Physical Dimensionsinches (millimeters) unless otherwise noted 20-Lead Small Outline Package (E) Order Number LM613AME/883 16-Lead Ceramic Dual-In-Line Package (J) Order Number LM613AMJ/883 www.national.com 20

Physical Dimensionsinches (millimeters) unless otherwise noted (Continued) 16-Lead Small Outline Package (WM) Order Number LM613IWM 16-Lead Molded Dual-In-Line Package (N) Order Number LM613CN, LM613AIN, LM613IN, LM613AMN or LM613MN www.national.com21

NATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT AND GENERAL COUNSEL OF NATIONAL SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. National Semiconductor Corporation Americas Tel: 1-800-272-9959 Fax: 1-800-737-7018 Email: support@nsc.com National Semiconductor Europe Fax: +49 (0) 1 80-530 85 86 Email: europe.support@nsc.com Deutsch Tel: +49 (0) 1 80-530 85 85 English Tel: +49 (0) 1 80-532 78 32 Français Tel: +49 (0) 1 80-532 93 58 Italiano Tel: +49 (0) 1 80-534 16 80 National Semiconductor Asia Pacific Customer Response Group Tel: 65-2544466 Fax: 65-2504466 Email: sea.support@nsc.com National Semiconductor Japan Ltd. Tel: 81-3-5639-7560 Fax: 81-3-5639-7507 www.national.com LM613 Dual Operational Amplifiers, Dual Comparators, and Adjustable Reference National does not assume any responsibility for use of any circuitry described, no circuit patent licenses are implied and National reserves the right at any time without notice to change said circuitry and specifications.