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LM6221,LM6321 www.ti.com SNOSC10C –MAY 1998–REVISED APRIL 2013 LM6121/LM6221/LM6321HighSpeedBuffer Check forSamples: LM6121 ,LM6221 ,LM6321 1FEATURES DESCRIPTION These highspeed unitygainbuffersslewat800 V/μs 23• High Slew Rate: 800 V/μs and have a smallsignalbandwidthof 50 MHz while• Wide Bandwidth: 50 MHz drivinga 50Ω load.They can drive±300 mA peak

  • Slew rateand Bandwidth 100% Tested and do not oscillatewhiledrivinglargecapacitive loads.The LM6121 familyare monolithicICs which• Peak Output Current: ±300 mA offerperformance similarto the LH0002 with the• High InputImpedance: 5 M Ω additionalfeaturesof currentlimitand thermal
  • LH0002H Pin Compatible shutdown.
  • No OscillationswithCapacitiveLoads These buffers are builtwith National'sVIP™
  • 5V to±15V OperationSpecified (VerticallyIntegratedPNP) process which provides fastPNP transistorsthataretruecomplements tothe• Currentand Thermal Limiting alreadyfastNPN devices.This advanced junction-• FullySpecifiedtoDrive50Ω Lines isolatedprocess delivershigh speed performance withouttheneed forcomplex and expensivedielectricAPPLICATIONS isolation.
  • LineDriving
  • Radar
  • Sonar SIMPLIFIED SCHEMATIC Numbers in()arefor8-pinN DIP. Pleasebe aware thatan importantnoticeconcerningavailability,standardwarranty,and use incriticalapplicationsof Texas Instrumentssemiconductorproductsand disclaimerstheretoappearsattheend ofthisdatasheet. 2VIP isa trademarkofTexas Instruments. 3Allothertrademarksarethepropertyoftheirrespectiveowners. PRODUCTION DATA informationiscurrentas ofpublicationdate. Copyright© 1998–2013,Texas InstrumentsIncorporatedProductsconform to specificationsper the terms of the Texas Instrumentsstandardwarranty.Productionprocessingdoes not necessarilyincludetestingofallparameters.

LM6221,LM6321 SNOSC10C –MAY 1998–REVISED APRIL 2013 www.ti.com These deviceshave limitedbuilt-inESD protection.The leadsshouldbe shortedtogetherorthedeviceplacedinconductivefoam duringstorageorhandlingtopreventelectrostaticdamage totheMOS gates. CONNECTION DIAGRAM *Heat-sinkingpins.See Applicationsectionon heatsinkingrequirements. PlasticDIP Note:Pin6 connectedtocase. MetalCan -Top View C *Pin3 must be connectedtothenegativesupply. **Heat-sinkingpins.See Applicationsectionon heat-sinkingrequirements. These pinsareatV− potential. PlasticSOIC

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LM6221,LM6321 www.ti.com SNOSC10C –MAY 1998–REVISED APRIL 2013 ABSOLUTE MAXIMUM RATINGS (1) SupplyVoltage 36V (±18) InputtoOutputVoltage(2) ±7V InputVoltage ±Vsupply OutputShort-CircuittoGND (3) Continuous StorageTemperatureRange −65°C to+150°C Lead Temperature(Soldering,10 seconds) 260°C Power Dissipation (4) ESD Tolerance(5) ±2000V JunctionTemperature(TJ(MAX)) +150°C (1) AbsoluteMaximum Ratingsindicatelimitsbeyond whichdamage tothedevicemay occur.DC and AC electricalspecificationsdo not applywhen operatingthedevicebeyond itsratedoperatingconditions. (2) Duringcurrentlimitorthermallimit,theinputcurrentwillincreaseiftheinputtooutputdifferentialvoltageexceeds8V.Forinputto outputdifferentialvoltagesinexcessof8V theinputcurrentshouldbe limitedto±20 mA. (3) The LM6121 seriesbufferscontaincurrentlimitand thermalshutdowntoprotectagainstfaultconditions. (4) The maximum power dissipationisa functionofTJ(max),θJA,and TA.The maximum allowablepower dissipationatany ambient temperatureisPD = (TJ(max)–TA)/θJA. (5) The testcircuitconsistsofthehuman body model of120 pF inserieswith1500Ω. OperatingRatings OperatingTemperatureRange LM6121H/883 −55°C to+125°C LM6221 −40°C to+85°C LM6321 0°C to+70°C OperatingSupplyRange 4.75to±16V ThermalResistance(θJA),(1) H Package 150°C/W N Package 47°C/W M Package 69°C/W ThermalResistance(θJC),H Package 17°C/W (1) The thermalresistanceθJA ofthedeviceintheN package ismeasured when soldereddirectlytoa printedcircuitboard,and theheat- sinkingpins(pins1,4,5 and 8)areconnectedto2 squareinchesof2 oz.copper.When installedina socket,thethermalresistanceθJA oftheN package is84°C/W. The thermalresistanceθJA ofthedeviceintheM package ismeasured when soldereddirectlytoa printed circuitboard,and theheat-sinkingpins(pins1,2,6,7,8,9,13,14)areconnectedto1 squareinchof2 oz.copper. Copyright© 1998–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 3 ProductFolderLinks:LM6121 LM6221 LM6321

LM6221,LM6321 SNOSC10C –MAY 1998–REVISED APRIL 2013 www.ti.com DC ELECTRICAL CHARACTERISTICS The followingspecificationsapplyforSupplyVoltage= ±15V,VCM = 0,R L ≥ 100 kΩ and R S = 50Ω unlessotherwisenoted. BoldfacelimitsapplyforTA = TJ = TMIN toTMAX ;allotherlimitsTA = TJ = 25°C. LM6121 LM6221 LM6321 Symbol Parameter Conditions Typ Units Limit(1)(2) Limit(1) Limit(1) AV1 VoltageGain 1 R L = 1 kΩ,VIN = ±10V 0.990 0.980 0.980 0.970 V/V 0.970 0.950 0.950 Min AV2 VoltageGain 2 R L = 50Ω,VIN = ±10V 0.900 0.860 0.860 0.850 V/V 0.800 0.820 0.820 Min R L = 50Ω, V+ = 5V 0.840 0.780 0.780 0.750 V/V AV3 VoltageGain 3 (3) VIN = 2 Vpp (1.5Vpp) 0.750 0.700 0.700 Min R L = 1 kΩ 15 30 30 50 mV VOS OffsetVoltage 50 60 100 Max 1 4 4 5 μA IB InputBiasCurrent R L = 1 kΩ,R S = 10 kΩ 7 7 7 Max R IN InputResistance R L = 50Ω 5 M Ω C IN InputCapacitance 3.5 pF 3 5 5 5 Ω R O OutputResistance IOUT = ±10 mA 10 10 6 Max 15 18 18 20 IS1 SupplyCurrent1 R L = ∞ 20 20 22 mA Max14 16 16 18 IS2 SupplyCurrent2 R L = ∞,V+ = 5V 18 18 20 13.5 13.3 13.3 13.2 ±V VO1 OutputSwing 1 R L = 1k 13 13 13 Min 12.7 11.5 11.5 11 ±V VO2 OutputSwing 2 R L = 100Ω 10 10 10 Min 12 11 11 10 ±V VO3 OutputSwing 3 R L = 50Ω 9 9 9 Min 1.8 1.6 1.6 1.6 VPP VO4 OutputSwing 4 R L = 50Ω, V+ = 5V (3) 1.3 1.4 1.5 Min 70 60 60 60 dB PSSR Power SupplyRejectionRatio V± = ±5V to±15V 55 50 50 Min (1) Limitsarespecifiedby testingorcorrelation. (2) ForspecificationlimitsoverthefullMilitaryTemperatureRange, see RETS6121X. (3) The inputisbiasedto2.5Vand VIN swingsVPP aboutthisvalue.The inputswingis2 VPP atalltemperaturesexceptfortheAV 3 testat −55°C where itisreducedto1.5VPP .

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LM6221,LM6321 www.ti.com SNOSC10C –MAY 1998–REVISED APRIL 2013 AC ELECTRICAL CHARACTERISTICS The followingspecificationsapplyforSupplyVoltage= ±15V,VCM = 0,R L ≥ 100 kΩ and R S = 50Ω unlessotherwisenoted. BoldfacelimitsapplyforTA = TJ = TMIN toTMAX ;allotherlimitsTA = TJ = 25°C. LM6121 LM6221 LM6321 Symbol Parameter Conditions Typ Units Limit(1) Limit(1) Limit(1) SR 1 Slew Rate 1 VIN = ±11V,R L = 1 kΩ 1200 550 550 550 V/μsSR 2 Slew Rate 2 VIN = ±11V,R L = 50Ω(2) 800 550 550 550 Min SR 3 Slew Rate 3 VIN = 2 VPP ,R L = 50ΩV+ = 5V (3) 50 550 550 550 VIN = ±100 mV PP ,R L = 50Ω,C L ≤ 10 pF MHzBW −3 dB Bandwidth 50 30 30 30 Min tr, RiseTime R L = 50Ω,C L ≤ 10 pF 7.0 nstf FallTime VO = 100 mV PP PropagationDelay R L = 50Ω,C L ≤ 10 pF,VO = 100 mV PPtpd 4.0 nsTime O S Overshoot R L = 50Ω,C L ≤ 10 pF,VO = 100 mV PP 10 % (1) Limitsarespecifiedby testingorcorrelation. (2) Slew rateismeasured witha ±11V inputpulseand 50Ω sourceimpedance at25°C. Sincevoltagegainistypically0.9drivinga 50Ω load,theoutputswingwillbe approximately±10V.Slew rateiscalculatedfortransitionsbetween ±5V levelson bothrisingand falling edges.A highspeed measurement isdone tominimizedeviceheating.Forslewrateversusjunctiontemperaturesee typical performancecurves.The inputpulseamplitudeshouldbe reducedto±10V formeasurements attemperatureextremes.Foraccurate measurements,theinputslewrateshouldbe atleast1700 V/μs. (3) The inputisbiasedto2.5Vand VIN swingsVPP aboutthisvalue.The inputswingis2 VPP atalltemperaturesexceptfortheAV 3 testat −55°C where itisreducedto1.5VPP . Copyright© 1998–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 5 ProductFolderLinks:LM6121 LM6221 LM6321

LM6221,LM6321 SNOSC10C –MAY 1998–REVISED APRIL 2013 www.ti.com TYPICAL PERFORMANCE CHARACTERISTICS TJ = 25°C, unlessotherwisespecified Frequency Response Frequency Response Figure1. Figure. Slew Rate vs Temperature Overshoot vs CapacitiveLoad Figure2. Figure3. Large SignalResponse Large SignalResponse R L = 1 kΩ R L = 50Ω Figure4. Figure5.

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LM6221,LM6321 www.ti.com SNOSC10C –MAY 1998–REVISED APRIL 2013 TYPICAL PERFORMANCE CHARACTERISTICS (continued) TJ = 25°C, unlessotherwisespecified Supply Current −3 dB Bandwidth Figure6. Figure7. Slew Rate Slew Rate Figure8. Figure9. Power Bandwidth InputReturn Gain (S11) Figure10. Figure11. Copyright© 1998–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 7 ProductFolderLinks:LM6121 LM6221 LM6321

LM6221,LM6321 SNOSC10C –MAY 1998–REVISED APRIL 2013 www.ti.com TYPICAL PERFORMANCE CHARACTERISTICS (continued) TJ = 25°C, unlessotherwisespecified Forward Transmission Gain (S12) CurrentLimit Figure12. Figure13.

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LM6221,LM6321 www.ti.com SNOSC10C –MAY 1998–REVISED APRIL 2013 ApplicationHints POWER SUPPLY DECOUPLING The method of supplybypassingisnot criticalforstabilityof the LM6121 seriesbuffers.However, theirhigh currentoutputcombined withhighslewratecan resultinsignificantvoltagetransientson thepower supplylines ifmuch inductanceispresent.For example,a slewrateof900 V/μs intoa 50Ω loadproducesa di/dtof18 A/μs. Multiplyingthisby a wiringinductanceof 50 nH (whichcorrespondsto approximately1½ ″ of 22 gauge wire) resultin a 0.9V transient.To minimizethisproblem use high qualitydecouplingvery closeto the device. Suggested valuesare a 0.1 μF ceramic in parallelwithone or two 2.2 μF tantalums.A ground plane is recommended. LOAD IMPEDANCE The LM6121 isstabletoany loadwhen drivenby a 50Ω source.As shown intheOvershootvs CapacitiveLoad graph,worstcase isa purelycapacitiveloadofabout1000 pF.Shuntingtheloadcapacitancewitha resistorwill reduceovershoot. SOURCE INDUCTANCE Likeany highfrequencybuffer,theLM6121 can oscillateathighvaluesofsourceinductance.The worstcase conditionoccursata purelycapacitiveloadof50 pF where up to100 nH ofsourceinductancecan be tolerated. Witha 50Ω load,thisgoes up to200 nH. Thissensitivitymay be reducedattheexpense ofa slightreductionin bandwidthby addinga resistorinserieswiththebufferinput.A 100Ω resistorwillensurestabilitywithsource inductancesup to400 nH withany load. OVERVOLTAGE PROTECTION The LM6121 may be severelydamaged ordestroyediftheAbsoluteMaximum Ratingof7V between inputand outputpinsisexceeded. Ifthe buffer'sinput-to-outputdifferentialvoltageisallowedto exceed 7V, a base-emitterjunctionwillbe in reverse-breakdown,and willbe inserieswitha forward-biasedbase-emitterjunction.ReferringtotheLM6121 simplifiedschematic,the transistorsinvolvedare Q1 and Q3 forpositiveinputs,and Q2 and Q4 fornegative inputs.Ifany currentisallowedtoflowthroughthesejunctions,localizedheatingofthereverse-biasedjunction willoccur,potentiallycausingdamage. The effectofthedamage istypicallyincreasedoffsetvoltage,increased bias current,and/or degraded AC performance.Furthermore,thiswilldefeatthe short-circuitand over- temperatureprotectioncircuitry.Exceeding±7V inputwitha shortedoutputwilldestroythedevice. The deviceisbestprotectedby theinsertionoftheparallelcombinationofa 100 kΩ resistor(R1)and a small capacitor(C1)inserieswiththebufferinput,and a 100 kΩ resistor(R2)from inputtooutputofthebuffer(see Figure14).Thisnetworknormallyhas no effecton the bufferoutput.However, ifthe buffer'scurrentlimitor shutdown isactivated,and theoutputhas a ground-referredloadofsignificantlylessthan100 kΩ,a largeinput- to-outputvoltagemay be present.R1 and R2 thenform a voltagedivider,keepingtheinput-outputdifferential below the 7V Maximum Ratingforinputvoltagesup to 14V. This protectionnetworkshouldbe sufficientto protecttheLM6121 fromtheoutputofnearlyany op amp whichisoperatedon supplyvoltagesof±15V orlower. Figure14. LM6121 withOvervoltageProtection HEATSINK REQUIREMENTS A heatsinkmay be requiredwiththe LM6321 depending on the maximum power dissipationand maximum ambienttemperatureoftheapplication.Under allpossibleoperatingconditions,thejunctiontemperaturemust be withintherangespecifiedunderAbsoluteMaximum Ratings. Copyright© 1998–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 9 ProductFolderLinks:LM6121 LM6221 LM6321

LM6221,LM6321 SNOSC10C –MAY 1998–REVISED APRIL 2013 www.ti.com To determineifa heatsinkisrequired,themaximum power dissipatedby thebuffer,P(max),must be calculated. The formulaforcalculatingthemaximum allowablepower dissipationinany applicationisPD = (TJ(max)−TA)/θJA. For the simplecase of a bufferdrivinga resistiveloadas inFigure15, the maximum DC power dissipation occurswhen theoutputisathalfthesupply.Assuming equalsupplies,theformulaisPD = IS (2V+)+ V+2/4R L. Figure15. The next parameterwhich must be calculatedisthe maximum allowabletemperaturerise,TR (max).This is calculatedby usingtheformula: TR (max)= TJ(max)− TA(max) (1) Where: TJ(max)isthemaximum allowablejunctiontemperature TA(max)isthemaximum ambienttemperature Using the calculatedvalues for TR (max) and P(max), the requiredvalue for junction-to-ambientthermal resistance,θ(J–A),can now be found: θ(J–A) = TR (max)/P(max) (2) The heatsinkfortheLM6321 ismade usingthePC board copper.The heatisconductedfrom thedie,through theleadframe (insidethepart),and outthepinswhich are solderedtothePC board.The pinsused forheat conductionare: Part Package Pins LM6321N 8-PinDIP 1,4,5,8 LM6321M 14-PinSO 1,2,3,6,7,8,9,13,14 Figure17 shows copperpatternswhichmay be used todissipateheatfromtheLM6321. Figure16. 8-PinDIP *Forbestresults,use L = 2H Figure17. 14-PinSOIC, Copper HeatsinkPatterns

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LM6221,LM6321 www.ti.com SNOSC10C –MAY 1998–REVISED APRIL 2013 The tablebelow shows some valuesofjunction-to-ambientthermalresistance(θJA) forvaluesofL and W for2 oz.copper. Package L (in.) H (in.) θJA (°C/W) 8-PinDIP 2 0.5 47 14-PinSO 1 0.5 69 2 1 57 Copyright© 1998–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 11 ProductFolderLinks:LM6121 LM6221 LM6321

LM6221,LM6321 SNOSC10C –MAY 1998–REVISED APRIL 2013 www.ti.com

REVISION HISTORY

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