LM611IMX TI1 | Alldatasheet
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www.ti.com SNOSC08C –MAY 1998–REVISED MARCH 2013 LM611OperationalAmplifierandAdjustableReference Check forSamples: LM611 1FEATURES DESCRIPTION The LM611 consistsofa single-supplyop-amp and a2OP AMP programmablevoltagereferenceinone space saving• Low OperatingCurrent:300 μA (op amp) 8-pinpackage.The op-amp out-performsmost single-
- Wide Supply VoltageRange: 4V to36V supply op-amps by providinghigher speed and bandwidthalongwithlow supplycurrent.Thisdevice• Wide Common-Mode Range: V− to(V+−1.8V) was specificallydesigned to lower cost and board• Wide DifferentialInputVoltage:±36V space requirementsintransducer,test,measurement
- AvailableinLow Cost 8-pinDIP and dataacquisitionsystems.
- AvailableinPlasticPackage Rated forMilitary Combining a stablevoltagereferencewith a wideTemperature Range Operation outputswing op-amp makes the LM611 idealfor REFERENCE singlesupply transducers,signalconditioningand bridgedrivingwhere largecommon-mode signalsare• AdjustableOutput Voltage:1.2Vto6.3V common. The voltagereferenceconsistsofa reliable• TightInitialToleranceAvailable:±0.6% band-gap designthatmaintainslow dynamic output
- Wide OperatingCurrentRange: 17 μA to20 impedance (1Ω typical),excellentinitialtolerance mA (0.6%),and the abilityto be programmed from 1.2V to 6.3V via two externalresistors.The voltage• ReferenceFloatsAbove Ground referenceis very stableeven when drivinglarge• TolerantofLoad Capacitance capacitiveloads,as are commonly encounteredin CMOS dataacquisitionsystems.
APPLICATIONS
As a member of TI'sSuper-Blockfamily,the LM611• Transducer BridgeDriver is a space-savingmonolithicalternativeto a multi- chip solution,offeringa high levelof integration• Process and Mass Flow ControlSystems withoutsacrificingperformance.• Power Supply VoltageMonitor
- BufferedVoltageReferencesforA/D's Connection Diagrams Figure1.HermeticDual-In-LinePackage Figure2.PlasticSurfaceMount Narrow Package Pleasebe aware thatan importantnoticeconcerningavailability,standardwarranty,and use incriticalapplicationsof Texas Instrumentssemiconductorproductsand disclaimerstheretoappearsattheend ofthisdatasheet. 2Alltrademarksarethepropertyoftheirrespectiveowners. PRODUCTION DATA informationiscurrentas ofpublicationdate. Copyright© 1998–2013,Texas InstrumentsIncorporatedProductsconform to specificationsper the terms of the Texas Instrumentsstandardwarranty.Productionprocessingdoes not necessarilyincludetestingofallparameters.
SNOSC08C –MAY 1998–REVISED MARCH 2013 www.ti.com These deviceshave limitedbuilt-inESD protection.The leadsshouldbe shortedtogetherorthedeviceplacedinconductivefoam duringstorageorhandlingtopreventelectrostaticdamage totheMOS gates. AbsoluteMaximum Ratings(1)(2) Voltageon Any PinsExceptVR (referredtoV− pin) 36V (Max) See (3) −0.3V(Min) CurrentthroughAny InputPinand VR Pin ±20 mA DifferentialInputVoltage Militaryand Industrial ±36V Commercial ±32V StorageTemperatureRange −65°C ≤TJ≤+150°C Maximum JunctionTemperature 150°C ThermalResistance,Junction-to-Ambient(4) N Package 100°C/W D Package 150°C/W SolderingInformationSoldering(10seconds) N Package 260°C D Package 220°C ESD Tolerance(5) ±1 kV (1) Absolutemaximum ratingsindicatelimitsbeyond whichdamage tothecomponent may occur.Electricalspecificationsdo notapply when operatingthedevicebeyond itsratedoperatingconditions. (2) IfMilitary/Aerospacespecifieddevicesarerequired,pleasecontacttheTexas InstrumentsSalesOffice/Distributorsforavailabilityand specifications. (3) More accurately,itisexcessivecurrentflow,withresultingexcessheating,thatlimitsthevoltageson allpins.When any pinispulleda diodedropbelowV−,a parasiticNPN transistorturnsON. No latch-upwilloccuras longas thecurrentthroughthatpinremainsbelow theMaximum Rating.Operationisundefinedand unpredictablewhen any parasiticdiodeortransistorisconducting. (4) Junctiontemperaturemay be calculatedusingTJ = TA + PD θJA.The giventhermalresistanceisworst-caseforpackagesinsocketsin stillair.Forpackagessolderedtocopper-cladboardwithdissipationfromone op amp orreferenceoutputtransistor,nominalθJA is 90°C/W fortheN package and 135°C/W fortheD package. (5) Human body model,100 pF dischargedthrougha 1.5kΩ resistor. OperatingTemperature Range LM611AI,LM611I,LM611BI −40°C ≤TJ≤+85°C LM611AM, LM611M −55°C ≤TJ≤+125°C LM611C 0°C ≤TJ≤70°C
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www.ti.com SNOSC08C –MAY 1998–REVISED MARCH 2013 ElectricalCharacteristics(1) These specificationsapplyforV− = GND = 0V,V+ = 5V,VCM = VOUT = 2.5V,IR = 100 μA,FEEDBACK pinshortedtoGND, unlessotherwisespecified.LimitsinstandardtypefaceareforTJ = 25°C; limitsinboldfacetypeapplyovertheOperating Temperature Range. Symbol Parameter Conditions Typical(2) LM611AM LM611M Units LM611AI LM611BI Limits(3) LM611I LM611C Limits(3) IS TotalSupplyCurrent R LOAD = ∞, 210 300 350 μA max 4V ≤ V+ ≤ 36V (32V forLM611C) 221 320 370 μA max VS SupplyVoltageRange 2.2 2.8 2.8 V min 2.9 3 3 V min 46 36 32 V max 43 36 32 V max OPERATIONAL AMPLIFIER VOS1 VOS Over Supply 4V ≤ V+ ≤ 36V 1.5 3.5 5.0 mV max (4V ≤ V+ ≤ 32V forLM611C) 2.0 6.0 7.0 mV max VOS2 VOS Over VCM VCM = 0V throughVCM = 1.0 3.5 5.0 mV max VOS3 AverageVOS Drift See (3) μV/°C15ΔT max IB InputBiasCurrent 10 25 35 nA max 11 30 40 nA max IOS InputOffsetCurrent 0.2 4 4 nA max 0.3 5 5 nA max IOS1 AverageOffsetDrift 4 pA/°CΔT Current R IN InputResistance Differential 1800 M Ω Common-Mode 3800 M Ω C IN InputCapacitance Common-Mode 5.7 pF en VoltageNoise f= 100 Hz, 74 nV/√Hz InputReferred In CurrentNoise f= 100 Hz, 58 fA/√Hz InputReferred CMRR Common-Mode V+ = 30V,0V ≤ VCM ≤ (V+ − 1.8V) 95 80 75 dB min Rejection-Ratio CMRR = 20 log(ΔVCM /ΔVOS ) 90 75 70 dB min PSRR Power Supply 4V ≤ V+ ≤ 30V,VCM = V+/2, 110 80 75 dB min Rejection-Ratio PSRR = 20 log(ΔV+/ΔVOS ) 100 75 70 dB min AV Open Loop R L = 10 kΩ toGND, V+ = 30V, 500 100 94 V/mV VoltageGain 5V ≤ VOUT ≤ 25V 50 40 40 min GBW Gain Bandwidth C L = 50 pF 0.80 MHz0.50 VO1 OutputVoltage R L = 10 kΩ toGND V+ − 1.4 V+ − 1.7 V+ − 1.8 V min Swing High V+ = 36V (32V forLM611C) V+ − 1.6 V+ − 1.9 V+ − 1.9 V min VO2 OutputVoltage R L = 10 kΩ toV+ V− + 0.8 V− + 0.9 V− + 0.95 V max Swing Low V+ = 36V (32V forLM611C) V− + 0.9 V− + 1.0 V− + 1.0 V max IOUT OutputSource VOUT = 2.5V,V+IN = 0V, 25 20 16 mA min Current V−IN = −0.3V 15 13 13 mA min (1) MilitaryRETS 611AMX electricaltestspecificationisavailableon request.The LM611AMJ/883 can alsobe procuredas a Standard MilitaryDrawing. (2) TypicalvaluesinstandardtypefaceareforTJ = 25°C; valuesinboldfacetypeapplyforthefulloperatingtemperaturerange.These valuesrepresentthemost likelyparametricnorm. (3) Alllimitsarespecifiedatroom temperature(standardtypeface)oratoperatingtemperatureextremes(boldfacetype). (4) Slew rateismeasured withop amp ina voltagefollowerconfiguration.Forrisingslewrate,theinputvoltageisdrivenfrom5V to25V, and theoutputvoltagetransitionissampled at10V and 20V.Forfallingslewrate,theinputvoltageisdrivenfrom25V to5V,and output voltagetransitionissampled at20V and 10V. Copyright© 1998–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 3 ProductFolderLinks:LM611
SNOSC08C –MAY 1998–REVISED MARCH 2013 www.ti.com ElectricalCharacteristics(1)(continued) These specificationsapplyforV− = GND = 0V,V+ = 5V,VCM = VOUT = 2.5V,IR = 100 μA,FEEDBACK pinshortedtoGND, unlessotherwisespecified.LimitsinstandardtypefaceareforTJ = 25°C; limitsinboldfacetypeapplyovertheOperating Temperature Range. Symbol Parameter Conditions Typical(2) LM611AM LM611M Units LM611AI LM611BI Limits(3) LM611I LM611C Limits(3) ISINK OutputSink VOUT = 1.6V,V+IN = 0V, 17 14 13 mA min Current V−IN = 0.3V 9 8 8 mA min ISHORT ShortCircuitCurrent VOUT = 0V,V+IN = 3V, 30 50 50 mA max V−IN = 2V,Source 40 60 60 mA max VOUT = 5V,V+IN = 2V, 30 60 70 mA max V−IN = 3V,Sink 32 80 90 mA max VOLTAGE REFERENCE VR ReferenceVoltage See (5) 1.244 1.2365 1.2191 V min 1.2515 1.2689 V max (±0.6%) (±2.0%) ΔVR AverageTemperature See (6) PPM/ °C10 80 150ΔTJ Drift max ΔVR Hysteresis Hyst= (Vro′ − Vro)/ΔTJ (7) 3.2 μV/°CΔTJ ΔVR VR Change VR(100 μA) − VR(17 μA) 0.05 1 1 mV max ΔIR withCurrent 0.1 1.1 1.1 mV max VR(10 mA) − VR(100 μA) (8) 1.5 5 5 mV max 2.0 5.5 5.5 mV max ΔVR(100→17 μA)/83μA 0.6 13 13 Ω max ΔVR VR Change with VR(Vro = Vr)− VR(Vro = 6.3V) 2.5 7 7 mV max VRO HighVRO (5.06Vbetween Anode and 2.8 10 10 mV max FEEDBACK) ΔVR VR Change with VR(V+ = 5V) − VR(V+ = 36V) 0.1 1.2 1.2 mV max ΔV+ V+ Change (V+ = 32V forLM611C) 0.1 1.3 1.3 mV max VR(V+ = 5V) − VR(V+ = 3V) 0.01 1 1 mV max 0.01 1.5 1.5 mV max ΔVR VR Change with V+ = V+ max, ΔVR = VR 0.7 1.5 1.6 mV max ΔVANODE VANODE Change (@ VANODE = V− = GND) − VR 3.3 3.0 3.0 mV max (@ VANODE = V+ − 1.0V) IFB FEEDBACK Bias IFB ;VANODE ≤ VFB ≤ 5.06V 22 35 50 nA max Current 29 40 55 nA max en VR Noise 10 Hz to10,000Hz,VRO = VR 30 μVRMS (5) VR isthecathode-feedbackvoltage,nominally1.244V. (6) Averagereferencedriftiscalculatedfromthemeasurement ofthereferencevoltageat25°C and atthetemperatureextremes.The drift, inppm/°C, is106•ΔVR /(VR[25°C]•ΔTJ),where ΔVR isthelowestvaluesubtractedfromthehighest,VR[25°C] isthevalueat25°C, and ΔTJ is thetemperaturerange.Thisparameterisensuredby designand sample testing. (7) Hysteresisisthechange inVR caused by a change inTJ,afterthereferencehas been “dehysterized”.To dehysterizethereference;that isminimizethehysteresistothetypicalvalue,itsjunctiontemperatureshouldbe cycledinthefollowingpattern,spiralingintoward (8) Low contactresistanceisrequiredforaccuratemeasurement.
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www.ti.com SNOSC08C –MAY 1998–REVISED MARCH 2013 TypicalPerformance Characteristics(Reference) TJ = 25°C, FEEDBACK pinshortedtoV− = 0V,unlessotherwisenoted ReferenceVoltagevs Temp on 5 RepresentativeUnits ReferenceVoltageDrift Figure3. Figure4. AcceleratedReference ReferenceVoltage VoltageDriftvs Time vs Currentand Temperature Figure5. Figure6. ReferenceVoltage ReferenceVoltage vs Currentand Temperature vs ReferenceCurrent Figure7. Figure8. Copyright© 1998–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 5 ProductFolderLinks:LM611
SNOSC08C –MAY 1998–REVISED MARCH 2013 www.ti.com TypicalPerformance Characteristics(Reference)(continued) TJ = 25°C, FEEDBACK pinshortedtoV− = 0V,unlessotherwisenoted ReferenceVoltage ReferenceAC vs ReferenceCurrent StabilityRange Figure9. Figure10. Feedback Current Feedback Current vs Feedback-to-Anode Voltage vs Feedback-to-Anode Voltage Figure11. Figure12. ReferenceNoise Voltage ReferenceSmall-Signal vs Frequency Resistancevs Frequency Figure13. Figure14.
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www.ti.com SNOSC08C –MAY 1998–REVISED MARCH 2013 TypicalPerformance Characteristics(Reference)(continued) TJ = 25°C, FEEDBACK pinshortedtoV− = 0V,unlessotherwisenoted ReferenceVoltagewith ReferencePower-Up Time Feedback VoltageStep Figure15. Figure16. ReferenceVoltagewith ReferenceStep Response 100∼∼12 μA CurrentStep for100 μA ∼∼ 10 mA CurrentStep Figure17. Figure18. ReferenceVoltageChange withSupply VoltageStep Figure19. Copyright© 1998–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 7 ProductFolderLinks:LM611
SNOSC08C –MAY 1998–REVISED MARCH 2013 www.ti.com TypicalPerformance Characteristics(Op Amps) V+ = 5V,V− = GND = 0V,VCM = V+/2,VOUT = V+/2,TJ = 25°C, unlessotherwisenoted InputCommon-Mode VoltageRange VOS vsTemperature vs JunctionTemperature Figure20. Figure21. InputBias Current ReferenceChange vs Common-Mode Voltage vs Common-Mode Voltage Figure22. Figure23. Large-Signal Output VoltageSwing Step Response vs Temp. and Current Figure24. Figure25.
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www.ti.com SNOSC08C –MAY 1998–REVISED MARCH 2013 TypicalPerformance Characteristics(Op Amps) (continued) V+ = 5V,V− = GND = 0V,VCM = V+/2,VOUT = V+/2,TJ = 25°C, unlessotherwisenoted Output Source Current Output Sink Current vs Output Voltageand Temp. vs Output Voltage Figure26. Figure27. Output Swing, Output Impedance Large Signal vs Frequency and Gain Figure28. Figure29. Small SignalPulse Response Small-SignalPulse Response vs Temp. vs Load Figure30. Figure31. Copyright© 1998–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 9 ProductFolderLinks:LM611
SNOSC08C –MAY 1998–REVISED MARCH 2013 www.ti.com TypicalPerformance Characteristics(Op Amps) (continued) V+ = 5V,V− = GND = 0V,VCM = V+/2,VOUT = V+/2,TJ = 25°C, unlessotherwisenoted Op Amp VoltageNoise Op Amp CurrentNoise vs Frequency vs Frequency Figure32. Figure33. Small-SignalVoltageGain Small-SignalVoltageGain vs Frequency and Temperature vs Frequency and Load Figure34. Figure35. FollowerSmall-Signal Common-Mode Input Frequency Response VoltageRejectionRatio Figure36. Figure37.
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www.ti.com SNOSC08C –MAY 1998–REVISED MARCH 2013 TypicalPerformance Characteristics(Op Amps) (continued) V+ = 5V,V− = GND = 0V,VCM = V+/2,VOUT = V+/2,TJ = 25°C, unlessotherwisenoted Power Supply Current PositivePower Supply vs Power Supply Voltage VoltageRejectionRatio Figure38. Figure39. NegativePower Supply VoltageRejectionRatio Slew Rate vs Temperature Figure40. Figure41. InputOffsetCurrent vs JunctionTemperature InputBias Currentvs JunctionTemperature Figure42. Figure43. Copyright© 1998–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 11 ProductFolderLinks:LM611
SNOSC08C –MAY 1998–REVISED MARCH 2013 www.ti.com TypicalPerformance Distributions Average VOS Drift Average VOS Drift MilitaryTemperature Range IndustrialTemperature Range Figure44. Figure45. Average VOS Drift Average IOS Drift Commercial Temperature Range MilitaryTemperature Range Figure46. Figure47. Average IOS Drift Average IOS Drift IndustrialTemperature Range Commercial Temperature Range Figure48. Figure49.
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www.ti.com SNOSC08C –MAY 1998–REVISED MARCH 2013 TypicalPerformance Distributions(continued) VoltageReferenceBroad-Band Op Amp Voltage Noise Distribution Noise Distribution Figure50. Figure51. Op Amp Current Noise Distribution Figure52. Copyright© 1998–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 13 ProductFolderLinks:LM611
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APPLICATION INFORMATION
The voltagereferenceisof a shunt regulatortopologythatmodels as a simplezener diode.With currentIr flowinginthe ‘forward'directionthereisthe familiardiodetransferfunction.Ir flowinginthe reversedirection forcesthereferencevoltagetobe developedfrom cathodetoanode.The appliedvoltagetothecathodemay rangefroma diodedropbelow V− tothereferencevoltageortotheavalanchevoltageoftheparallelprotection diode,nominally7V.A 6.3VreferencewithV+ = 3V isallowed. Figure53. VoltagesAssociatedwithReference (CurrentSource Ir isExternal) The referenceequivalentcircuitrevealshow Vr is held at the constant1.2V by feedback,and how the FEEDBACK pinpasseslittlecurrent. To generatetherequiredreversecurrent,typicallya resistorisconnectedfroma supplyvoltagehigherthanthe referencevoltage.Varyingthatvoltage,and so varyingIr,has smalleffectwiththeequivalentseriesresistanceof lessthanan ohm atthehighercurrents.Alternatively,an activecurrentsource,such as theLM134 series,may generateIr. Figure54. ReferenceEquivalentCircuit Figure55. 1.2VReference
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www.ti.com SNOSC08C –MAY 1998–REVISED MARCH 2013 Capacitorsin parallelwith the referenceare allowed.See the Reference AC StabilityRange curve for capacitancevalues— from20 μA to3 mA any capacitorvalueisstable.Withthereference'swide stabilityrange withresistiveand capacitiveloads,a widerangeofRC filtervalueswillperformnoisefiltering. AdjustableReference The FEEDBACK pinallowsthereferenceoutputvoltage,Vro,tovaryfrom1.24V to6.3V.The referenceattempts toholdVr at1.24V.IfVr isabove 1.24V,thereferencewillconductcurrentfromCathode toAnode; FEEDBACK currentalwaysremainslow.IfFEEDBACK isconnectedtoAnode, thenVro = Vr = 1.24V.For highervoltages FEEDBACK isheldata constantvoltageabove Anode— say 3.76VforVro = 5V.Connectinga resistoracrossthe constantVr generatesa currentI=R1/Vr flowingfrom Cathode intoFEEDBACK node. A Theveninequivalent 3.76V isgeneratedfrom FEEDBACK toAnode withR2=3.76/I.Keep Igreaterthanone thousandtimeslarger thanFEEDBACK biascurrentfor<0.1% error— I≥32 μA forthemilitarygradeoverthemilitarytemperaturerange (I≥5.5μA fora 1% untrimmederrorfora commercialpart.) Figure56. Thevenin Equivalentof Referencewith5V Output R1 = Vr/I= 1.24/32μ = 39k Figure57. ResistorsR1 and R2 Program ReferenceOutput Voltagetobe 5V UnderstandingthatVr isfixedand thatvoltagesources,resistors,and capacitorsmay be tiedtotheFEEDBACK pin,a rangeofVr temperaturecoefficientsmay be synthesized. Copyright© 1998–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 15 ProductFolderLinks:LM611
SNOSC08C –MAY 1998–REVISED MARCH 2013 www.ti.com Figure58. Output Voltagehas NegativeTemperature Coefficient(TC)ifR2 has NegativeTC Figure59. Output Voltagehas PositiveTC ifR1 has NegativeTC Figure60. Diode inSerieswithR1 Causes VoltageAcross R1 and R2 tobe Proportional toAbsoluteTemperature (PTAT) Connectinga resistoracrossCathode-to-FEEDBACK createsa 0 TC currentsource,buta rangeofTCs may be synthesized.
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www.ti.com SNOSC08C –MAY 1998–REVISED MARCH 2013 I= Vr/R1= 1.24/R1 Figure61. CurrentSource isProgrammed by R1 Figure62. Proportional-to-Absolute- Temperature CurrentSource Figure63. Negative−TC CurrentSource Hysteresis The referencevoltagedepends,slightly,on the thermalhistoryof the die.Competitivemicro-powerproducts vary— always check the data sheet forany given device.Do not assume thatno specificationmeans no hysteresis. Copyright© 1998–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 17 ProductFolderLinks:LM611
SNOSC08C –MAY 1998–REVISED MARCH 2013 www.ti.com OPERATIONAL AMPLIFIER The amp orthereferencemay be biasedinany way withno effecton theother,exceptwhen a substratediode conducts(see (1)underElectricalCharacteristics).The amp may have inputsoutsidethecommon-mode range, may be operatedas a comparator,or have allterminalsfloatingwithno effecton thereference(tyinginverting inputtooutputand non-invertinginputtoV− on unused amp ispreferred).Choosingoperatingpointsthatcause oscillation,such as drivingtoolargea capacitiveload,isbestavoided. Op Amp Output Stage The op amp, liketheLM124 series,has a flexibleand relativelywide-swingoutputstage.There aresimplerules tooptimizeoutputswing,reducecross-overdistortion,and optimizecapacitivedrivecapability: 1. OutputSwing:Unloaded,the 42 μA pull-downwillbringthe outputwithin300 mV of V− over the military temperaturerange.Ifmore than42 μA isrequired,a resistorfrom outputtoV− willhelp.Swing acrossany loadmay be improvedslightlyiftheloadcan be tiedtoV+,atthecostofpoorersinkingopen-loopvoltage gain. 2. Cross-overDistortion:The LM611 has lowercross-overdistortion(a 1 VBE deadband versus3 VBE forthe LM124),and increasedslewrateas shown intheTypicalPerformanceCharactersiticscurves.A resistorpull- up or pull-downwillforceclass-Aoperationwith only the PNP or NPN outputtransistorconducting, eliminatingcross-overdistortion. 3. CapacitiveDrive:Limitedby theoutputpolecaused by theoutputresistancedrivingcapacitiveloads,a pull- down resistorconducting1 mA ormore reducestheoutputstageNPN re untiltheoutputresistanceisthatof thecurrentlimit25Ω.200 pF may thenbe drivenwithoutoscillation. Op Amp InputStage The lateralPNP inputtransistors,unlikethoseof most op amps, have BV EBO equalto the absolutemaximum supplyvoltage.Also,theyhave no diodeclamps to the positivesupplynor acrossthe inputs.These features make the inputslooklikehigh impedances to inputsourcesproducinglargedifferentialand common-mode voltages. TypicalApplications *10kmust be low t.c.trimpot. Figure64. UltraLow Noise 10.00VReference. TotalOutput Noise isTypically14 μVRMS . Adjustthe10k pot for10.000V. (1) Absolutemaximum ratingsindicatelimitsbeyond whichdamage tothecomponent may occur.Electricalspecificationsdo notapply when operatingthedevicebeyond itsratedoperatingconditions.
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www.ti.com SNOSC08C –MAY 1998–REVISED MARCH 2013 Figure65. Simple Low QuiescentDrainVoltageRegulator.TotalSupply Currentisapproximately320 μA when VIN = 5V,and outputhas no load. VOUT = (R1/R2+ 1)VREF . R1, R2 shouldbe 1% metalfilm. R3 shouldbe lowt.c.trimpot. Figure66. Slow Rise-TimeUpon Power-Up, AdjustableTransducer BridgeDriver. Rise-timeisapproximately0.5ms. Copyright© 1998–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 19 ProductFolderLinks:LM611
SNOSC08C –MAY 1998–REVISED MARCH 2013 www.ti.com Figure67. Low Drop-Out VoltageRegulatorCircuit.Drop out voltageistypically0.2V. Figure68. NullingBridgeDetectionSystem. Adjustsensitivityvia400 kΩ pot. NulloffsetwithR1, and bridgedrivewiththe10k pot.
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www.ti.com SNOSC08C –MAY 1998–REVISED MARCH 2013 SimplifiedSchematic Diagrams Figure69. Op Amp Figure70. Reference Figure71. Bias Copyright© 1998–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 21 ProductFolderLinks:LM611
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REVISION HISTORY
Changes from RevisionB (March 2013)toRevisionC Page
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www.ti.com 18-Oct-2013 Addendum-Page 1 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Drawing Pins Package Qty Eco Plan (2) Lead/Ball Finish (6) MSL Peak Temp (3) Op Temp (°C) Device Marking (4/5) Samples LM611CM/NOPB ACTIVE SOIC D 14 55 Green (RoHS & no Sb/Br) SN | CU SN Level-1-260C-UNLIM 0 to 70 LM611CM LM611CMX/NOPB ACTIVE SOIC D 14 2500 Green (RoHS & no Sb/Br) SN | CU SN Level-1-260C-UNLIM 0 to 70 LM611CM LM611IM/NOPB ACTIVE SOIC D 14 55 Green (RoHS & no Sb/Br) SN | CU SN Level-1-260C-UNLIM -40 to 85 LM611IM LM611IMX/NOPB ACTIVE SOIC D 14 2500 Green (RoHS & no Sb/Br) CU SN Level-1-260C-UNLIM -40 to 85 LM611IM (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability information and additional product content details. TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above. Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material) (3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. (4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device. (5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation of the previous line and the two combined represent the entire Device Marking for that device. (6) Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish value exceeds the maximum column width.
www.ti.com 18-Oct-2013 Addendum-Page 2 Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release. In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
*All dimensions are nominal Device Package Type Package Drawing Pins SPQ Reel Diameter (mm) Reel Width W1 (mm) (mm) (mm) (mm) (mm) W (mm) Pin1 Quadrant PACKAGE MATERIALS INFORMATION www.ti.com 23-Sep-2013 Pack Materials-Page 1
*All dimensions are nominal Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) LM611CMX/NOPB SOIC D 14 2500 367.0 367.0 35.0 LM611IMX/NOPB SOIC D 14 2500 367.0 367.0 35.0 PACKAGE MATERIALS INFORMATION www.ti.com 23-Sep-2013 Pack Materials-Page 2
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