LM61089A LEIDITECH | Alldatasheet
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Dual programmable transient suppressor. . Widenegative firing voltage range: VGKRM=-167V max. Low dynamic switching voltage: VFRM and VGK(BD). Low gate triggering current: IGT=5mAmax. Peak pulse current: IPP=30A for 10/1000μssurge. Holding current: IH=150mA min. APPLICATION: isdesigned toprotect communicationequipmentsuch asSPC exchangerfrombeingdamagedby transient overvoltagesatthesecondlevel. TESTINGSTANDARD Type WaveSharp VPP/IPP ITU-TK.20/21and K.45 Voltage 10/700 μs 2000V Current 5/310 μs 40A LM61089A LM61089A LM61089A Rev
ABSOLUTEMAXIMUMRATINGS(TA=25 ℃,RH=45%-75%,unless otherwise noted) Note1：5/310µs means current wave, and its rise time is 5µs, fall timeis 310µs. 10/700µs means voltage wave, and its rise timeis 10µs,fall timeis 700µs. Note2：Initially the protector must be in thermal equilibrium with TJ= 25°C. EIA/JESD51-2 environment and EIA/JESD51-7 high effective thermal conductivity test board (multi-layer) connected with 0.6 mm printed wiring track widths ELECTRICAL CHARACTERISTICS (TA=25℃) Parameter Symbol Value Unit Storagetemperaturerange TSTG -40to +150 ℃ Operatingjunctiontemperature TJ -40to +150 ℃ Non-repetitive peak on-statepulsecurrent 10/1000µs (Telcordia(Bellcore) GR-1089-CORE,Issue2, February) ITSP A 5/310µs (ITU-TK.20/21& K.45/44open-circuit voltage 10/700µs) 40 1.2/50µs (Telcordia (Bellcore) GR-1089-CORE,Issue 2,February ) 100 Non-repetitive peak pulsevoltage（10/700µs） VPP 2000 V Nonrepetitive surge peakon-statecurrent (sinusoidal) 60Hz(Note 2)900s ITSM 0.5 A Maximumvoltage LINE/GROUND VDRM -170 V Maximumvoltage GATE/LINE VGKRM -167 V Symbol Parameter Test conditions Value UnitMin. Typ. Max. Parametersrelatedtothediode VF Forwardvoltage I F=5A, tw=200μs - - 3 V VFRM Peakforward recovery voltage 2/10us,IF=100A,Rs=55Ω Di/dt=80A/us - - 10 V Parametersrelatedtotheprotectionthyristor IDRM Off-statecurrent V DRM=-170V,VGK=0V - - 5 µA VBO Breakover voltage 10/700us,ITM=-100A, Rs=50Ω,VGG=100V, di/dt=-80A/μs - - 112 V IH Holdingcurrent IT=-1A, di/dt=1A/ms, VGG=-100V 150 - - mA LM61089A Rev
ELECTRICAL CHARACTERISTICS (TA=25℃, contuined) ELECTERICAL CAHRACTERISTIC SOP PACKAGE TOP VIEW AND DEVICE SYMBOL IGKS Gatereverse current VGG=VGK=-167V, VKA=0,TJ=25℃ - - 5 µA IGT Gatetrigger current IT=3A,tp(g)≥20μs, VGG=-100V - - 5 mA VGT Gatetrigger voltage IT=3A,tp(g)≥20μs, VGG=-100V - - 2.5 V CAK Anode-cathode off-statecapacitance f=1MHz,Vd=1V,IG=0A， VD=-3V - - 100 pF Symbol Parameters IDRM Off-statecurrent IH Holdingcurrent VBO Break-over voltage VF Forwardvoltage VFRM Peakforward recovery voltage VGK(BD) Gate-cathodeimpulse break-over voltage IGKS Gatereverse current IGT Gatetrigger current VGT Gate-cathodetrigger voltage CKA Cathode-anodeoff-state capacitance LM61089A Rev
Holdingcurrenttestcircuit(test circuit 1) Thisis a conduction-cutofftest. Thetestcircuit can ascertainthesize ofholding current. Testmethod： 1.Shortout DUT, regulating currentin IHrange； 2.TriggeringDUT withIPP=10A, 10/1000μssurgecurrent ； DUT needstoreturntotheoff-statein themaximum50ms LM61089A Rev
nghai Leiditech Electronic Co.,Ltd Email: sale1@leiditech.com Tel : +86- 021 50828806 Fax : +86- 021 50477059 Rev D imensions Millimeters InchesRef. A L1-L1' 1.40 1.35 0.31 1.70 1.55 0.51 0.055 0.053 0.015 0.067 0.061 0.017 0.17 0.25 3.88 0.12 0.005 0.007 0.010 4.70 5.10 0.185 0.200 3.93 0.153 0.155 b c D E L e 0.05 0.15 1.27 1.02 0.050 0.04 0.002 0.006 0.62 0.77 0.024 0.030 A A E b E e A D L cL L .80 6.20 0.228 0.244 .401.14 1.00 1.04 θ θ 0 ° 8° 0° 8° 0.0480.039 0.045 0.055 S OP-8