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/C0080 /C0115 /C0111/C0110/C0111 /C0115 Product data Supersedes data of 2002 Jan 22 NE/SA/SE532 LM258/358/A/2904 Low power dual operational amplifiers

2002 Jul 12

Philips Semiconductors Product data NE/SA/SE532/ LM258/358/A/2904Low power dual operational amplifiers

22002 Jul 12 853-1241 28616

DESCRIPTION

The 532/358/LM2904 consists of two independent, high gain, internally frequency-compensated operational amplifiers internally frequency-compensated operational amplifiers designed specifically to operate from a single power supply over a wide range of voltages. Operation from dual power supplies is also possible, and the low power supply current drain is independent of the magnitude of the power supply voltage. UNIQUE FEATURES In the linear mode the input common-mode voltage range includes ground and the output voltage can also swing to includes ground and the output voltage can also swing to ground, even though operated from only a single power supply voltage. The unity gain cross frequency is temperature-compensated. The input bias current is also temperature-compensated.

FEATURES

  • Internally frequency-compensated for unity gain
  • Large DC voltage gain: 100 dB
  • Wide bandwidth (unity gain): 1 MHz (temperature-compensated)
  • Wide power supply range single supply: 3 VDC to 30 VDC , or dual supplies: ±1.5 VDC to ±15 VDC
  • Very low supply current drain (400 µA)—essentially independent of supply voltage (1 mW/op amp at +5 VDC )
  • Low input biasing current: 45 nADC temperature-compensated
  • Low input offset voltage: 2 mVDC , and offset current: 5nADC
  • Differential input voltage range equal to the power supply voltage
  • Large output voltage: 0 VDC to V+ 1.5 VDC swing PIN CONFIGURATION –+ + –AB OUTPUT B INVERTING INPUT B NON INVERTING INPUT B OUTPUT A INVERTING INPUT A NON INVERTING INPUT A D, DP, and N Packages SL00282

Figure 1. Pin configuration. Figure 2. Equivalent circuit.

Philips Semiconductors Product data NE/SA/SE532/ LM258/358/A/2904Low power dual operational amplifiers

2002 Jul 12 3

ORDERING INFORMATION

DESCRIPTION TEMPERATURE RANGE ORDER CODE DWG # 8-Pin Plastic Small Outline (SO) Package 0 °C to +70 °C NE532D SOT96-1 8-Pin Plastic Dual In-Line Package (DIP) 0 °C to +70 °C NE532N SOT97-1 8-Pin Plastic Small Outline (SO) Package –40 °C to +85 °C SA532D SOT96-1 8-Pin Plastic Small Outline (SO) Package –40 °C to +125 °C LM2904D SOT96-1 8-Pin Plastic Thin Shrink Small Outline Package (TSSOP) –40 °C to +125 °C LM2904DP SOT505-1 8-Pin Plastic Dual In-Line Package (DIP) –40 °C to +125 °C LM2904N SOT97-1 8-Pin Plastic Small Outline (SO) Package –25 °C to +125 °C LM258D SOT96-1 8-Pin Plastic Dual In-Line Package (DIP) –25 °C to +125 °C LM258N SOT97-1 8-Pin Plastic Small Outline (SO) Package 0 °C to +70 °C LM358D SOT96-1 8-Pin Plastic Thin Shrink Small Outline Package (TSSOP) 0 °C to +70 °C LM358DP SOT505-1 8-Pin Plastic Dual In-Line Package (DIP) 0 °C to +70 °C LM358N SOT97-1 8-Pin Plastic Small Outline (SO) Package 0 °C to +70 °C LM358AD SOT96-1 8-Pin Plastic Dual In-Line Package (DIP) 0 °C to +70 °C LM358AN SOT97-1 8-Pin Plastic Dual In-Line Package (DIP) –55 °C to +125 °C SE532N SOT97-1 ABSOLUTE MAXIMUM RATINGS SYMBOL PARAMETER RATING UNIT VS Supply voltage, V+ 32 or ±16 VDC Differential input voltage 32 VDC VIN Input voltage –0.3 to +32 VDC Maximum power dissipation Tamb = 25 °C (Still air)1 PD N package 1160 mW D package 780 mW DP package 714 mW Output short-circuit to GND2 V+ < 15 VDC and Tamb = 25 °C Continuous Operating ambient temperature range NE532/LM358/LM358A 0 to +70 °C Tamb LM258 –25 to +85 °CTam b LM2904 –40 to +125 °C SA532 –40 to +85 °C SE532 –55 to +125 °C Tstg Storage temperature range –65 to +150 °C Tsld Lead soldering temperature (10 sec max) 230 °C NOTE: 1. Derate above 25 °C, at the following rates: N package at 9.3 mW/°C D package at 6.2 mW/°C DP package at 5.72 mW/°C 2. Short-circuits from the output to V+ can cause excessive heating and eventual destruction. The maximum output current is approximately 40 mA independent of the magnitude of V+. At values of supply voltage in excess of +15 VDC , continuous short-circuits can exceed the power dissipation ratings and cause eventual destruction.

Philips Semiconductors Product data NE/SA/SE532/ LM258/358/A/2904Low power dual operational amplifiers

2002 Jul 12 4

DC ELECTRICAL CHARACTERISTICS Tamb = 25 °C; V+ = +5 V, unless otherwise specified. SYMBOL PARAMETER TEST CONDITIONS SE532, LM258 NE/SA532/ LM358/LM2904 UNIT Min Typ Max Min Typ Max VOS Offset voltage1 R S = 0 Ω ±2 ±5 ±2 ±7 mV VOS Offset voltage1 R S = 0 Ω ; over temp. ±7 ±9 mV VOS Drift R S = 0 Ω ; over temp. 7 7 µV/°C IOS Offset current IIN(+) – IIN(–) ±3 ±30 ±5 ±50 nA IOS Offset current Over temp. ±100 ±150 nA IOS Drift Over temp. 10 10 pA/°C I S Input current2 IIN(+) or IIN(–) 45 150 45 250 nA IBIAS Input current2 IIN(+) or IIN(–); Over temp. 40 300 40 500 nA IB Drift Over temp. 50 50 pA/°C VC Common-mode voltage V+ = 30 V 0 V+–1.5 0 V+–1.5 V VCM g range3 V+ = 30 V; Over temp. 0 V+–2.0 0 V+–2.0 V CMRR Common-mode rejection ratio V+ = 30 V 70 85 65 70 dB VO Output voltage swing R L ≥ 2 kΩ ; V+ = 30 V; over temp.26 26 V VOH O utput voltage sw ing R L ≥ 10 kΩ ; V+ = 30 V; over temp.27 28 27 28 V VOL Output voltage swing R L ≥ 10 kΩ ; over temp. 5 20 5 20 mV R L = ∞ ; V+ = 30 V 0.5 1.0 0.5 1.0 mA ICC Supply current R L=∞ on all amplifiers; V+ = 30 V; R L ≥ 2 kΩ ; VOUT ±10 V 50 100 25 100 V/mV AVOL Large-signal voltage gain V+=15V (for large VO swing); over temp. 25 15 V/mV PSRR Supply voltage rejection ratio R S = 0 Ω 65 100 65 100 dB Amplifier-to-amplifier coupling4 f = 1 kHz to 20 kHz (input referred) –120 –120 dB Output current (Source) VIN+ = +1 VDC ; VIN– = 0 VDC ; V+ = 15 VDC 20 40 20 40 mA O utput current (Source) VIN+ = +1 VDC ; VIN– = 0 VDC ; V+ = 15 VDC ; over temp. 10 20 10 20 mA IOUT VIN– = +1 VDC ; VIN+ = 0 VDC ; V+ = 15 VDC 10 20 10 20 mA Output current (Sink) VIN– = +1 VDC ; VIN+ = 0 VDC ; V+ = 15 VDC ; over temp. 5 8 5 8 mA VIN+ = 0 V; VIN– = +1 VDC ; VO = 200 mV 12 50 12 50 µA ISC Short circuit current5 40 60 40 60 mA Differential input voltage6 V+ V+ V GBW Unity gain bandwidth Tamb = 25 °C 1 1 MHz SR Slew rate Tamb = 25 °C 0.3 0.3 V/µs VNOISE Input noise voltage Tamb = 25 °C; f = 1 kHz 40 40 nV/√Hz (Notes on next page).

Philips Semiconductors Product data NE/SA/SE532/ LM258/358/A/2904Low power dual operational amplifiers

2002 Jul 12 5

DC ELECTRICAL CHARACTERISTICS (continued) Tamb = 25 °C; V+ = +5 V; unless otherwise specified. SYMBOL PARAMETER TEST CONDITIONS LM358A UNITSYMBOL PARAMETER TEST CONDITIONS Min Typ Max UNIT VOS Offset voltage1 R S = 0 Ω ±2 ±3 mV VOS Offset voltage1 R S = 0 Ω ; over temp. ±5 mV VOS Drift R S = 0 Ω ; over temp. 7 20 µV/°C IOS Offset current IIN(+) – IIN(–) 5 ±30 nA IOS Offset current Over temp. ±75 nA IOS Drift Over temp. 10 300 pA/°C I S Input current2 IIN(+) or IIN(–) 45 100 nA IBIAS Input current2 IIN(+) or IIN(–); Over temp. 40 200 nA IB Drift Over temp. 50 pA/°C VC Common mode voltage range3 V+ = 30 V 0 V+–1.5 V VCM Common -mode voltage range3 V+ = 30 V; Over temp. 0 V+–2.0 V CMRR Common-mode rejection ratio V+ = 30 V 65 85 dB VO Output voltage swing R L ≥ 2 kΩ ; V+ = 30 V; over temp. 26 V VOH O utput voltage sw ing R L ≥ 10 kΩ ; V+ = 30 V; over temp. 27 28 V VOL Output voltage swing R L ≥ 10 kΩ ; over temp. 5 20 mV ICC Supply current R L = ∞ , V+ = 30 V 0.5 1.0 mA ICC Supply current R L = ∞ on all amplifiers; V+ = 30 V; over temp. 0.6 1.2 mA A O Large signal voltage gain R L ≥ 2 kΩ ; VOUT ±10 V 25 100 V/mV AVOL Large-signal voltage gain V+ = 15 V (for large VO swing); over temp. 15 V/mV PSRR Supply voltage rejection ratio R S = 0 Ω 65 100 dB Amplifier-to-amplifier coupling4 f=1kHz to 20kHz (input referred) –120 dB VIN+ = +1 VDC ; VIN– = 0 VDC ; V+ = 15 VDC 20 40 mA Output current (Source) VIN+ = +1 VDC ; VIN– = 0 VDC ; V+ = 15 VDC ; over temp. 10 20 mA IOUT VIN– = +1 VDC ,;VIN+ = 0 VDC ; V+ = 15 VDC 10 20 mA Output current (Sink) VIN– = +1 VDC ; VIN+ = 0 VDC ;V+ = 15 VDC ; over temp. 5 8 mA VIN+ = 0 V; VIN– = +1 VDC ; VO = 200 mV 12 50 µA ISC Short circuit current5 40 60 mA Differential input voltage6 V+ V GBW Unity gain bandwidth Tamb = 25 °C 1 MHz SR Slew rate Tamb = 25 °C 0.3 V/µs VNOISE Input noise voltage Tamb = 25 °C; f = 1 kHz 40 nV/√Hz NOTES: 1. VO ≈ 1.4 V, RS = 0 Ω with V+ from 5 V to 30 V; and over the full input common-mode range (0 V to V+ –1.5 V). 2. The direction of the input current is out of the IC due to the PNP input stage. This current is essentially constant, independent of the state of the output so no loading change exists on the input lines. 3. The input common-mode voltage or either input signal voltage should not be allowed to go negative by more than 0.3 V. The upper end of the common-mode voltage range is V+ –1.5 V, but either or both inputs can go to +32 V without damage. 4. Due to proximity of external components, insure that coupling is not originating via stray capacitance between these external parts. This typically can be detected as this type of capacitance coupling increases at higher frequencies. 5. Short-circuits from the output to V+ can cause excessive heating and eventual destruction. The maximum output current is approximately 40 mA independent of the magnitude of V+. At values of supply voltage in excess of +15 VDC , continuous short-circuits can exceed the power dissipation ratings and cause eventual destruction. 6. The input common-mode voltage or either input signal voltage should not be allowed to go negative by more than 0.3 V. The upper end of the common-mode voltage range is V+ –1.5 V, but either or both inputs can go to +32 VDC without damage.

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Figure 3. Typical performance characteristics.

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7.5 VDC

Figure 4. Typical performance characteristics (continued). Figure 5. Typical applications.

Philips Semiconductors Product data NE/SA/SE532/ LM258/358/A/2904Low power dual operational amplifiers

2002 Jul 12 8

SO8: plastic small outline package; 8 leads; body width 3.9 mm SOT96-1

Philips Semiconductors Product data NE/SA/SE532/ LM258/358/A/2904Low power dual operational amplifiers

2002 Jul 12 9

DIP8: plastic dual in-line package; 8 leads (300 mil) SOT97-1

Philips Semiconductors Product data NE/SA/SE532/ LM258/358/A/2904Low power dual operational amplifiers

2002 Jul 12 10

TSSOP8: plastic thin shrink small outline package; 8 leads; body width 3 mm SOT505-1

Philips Semiconductors Product data NE/SA/SE532/ LM258/358/A/2904Low power dual operational amplifiers

2002 Jul 12 11

Philips Semiconductors Product data NE/SA/SE532/ LM258/358/A/2904Low power dual operational amplifiers

2002 Jul 12 12

Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Disclaimers Life support — These products are not designed for use in life support appliances, devices or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes — Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to:  Koninklijke Philips Electronics N.V. 2002 All rights reserved. Printed in U.S.A. Date of release: 08-02 Document order number: 9397 750 10187 /C0080 /C0115 /C0111/C0110/C0111 /C0115 Data sheet status[1] Objective data Preliminary data Product data Product status[2] Development Qualification Production Definitions This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A. Data sheet status [1] Please consult the most recently issued data sheet before initiating or completing a design. [2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.