LM2705MFX-ADJ/NOPB

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LM2705 Micropower Step-up DC/DC Converter with 150mA Peak Current Limit

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D VIN = Li-Ion C IN C OUTLM2705 L

68 PH 20V

4.7 PF 1 PF

C IN: Taiyo Yuden Ceramic C OUT : Taiyo Yuden Ceramic L: Coilcraft DT1608C-683 D: ON Semiconductor MBRM130LT3 LM2705 www.ti.com SNVS191E –NOVEMBER 2002–REVISED MAY 2013 LM2705MicropowerStep-upDC/DCConverterwith150mAPeakCurrentLimit Check forSamples: LM2705 1FEATURES DESCRIPTION The LM2705 is a micropower step-upDC/DC in a 2• 150mA, 0.7Ω,internalswitch small5-leadSOT-23 package.A currentlimited,fixed• Uses smallsurfacemount components off-timecontrolscheme conservesoperatingcurrent

Adjustableoutputvoltageup to20V resultinginhighefficiencyovera wide range ofload conditions.The 21V switchallowsforoutputvoltages• 2.2Vto7V inputrange as highas 20V. The low 400ns off-timepermitsthe• Inputundervoltagelockout use of tiny,low profileinductorsand capacitorsto
0.01µA shutdown current minimize footprintand cost in space-conscious portableapplications.The LM2705 isidealforLCD• Small 5-Lead SOT-23 package panels requiringlow currentand high efficiencyas wellas white LED applicationsforcellularphoneAPPLICATIONS back-lighting.The LM2705 can driveup to 3 white
LCD Bias Supplies LEDs from a singleLi-Ionbattery.The low peak inductorcurrentoftheLM2705 makes itidealforUSB• White LED Back-Lighting applications.• Handheld Devices
DigitalCameras
PortableApplications TypicalApplicationCircuit Figure1. Typical20V Application Pleasebe aware thatan importantnoticeconcerningavailability,standardwarranty,and use incriticalapplicationsof Texas Instrumentssemiconductorproductsand disclaimerstheretoappearsattheend ofthisdatasheet. 2Alltrademarksarethepropertyoftheirrespectiveowners. PRODUCTION DATA informationiscurrentas ofpublicationdate. Copyright© 2002–2013,Texas InstrumentsIncorporatedProductsconform to specificationsper the terms of the Texas Instrumentsstandardwarranty.Productionprocessingdoes not necessarilyincludetestingofallparameters.

R1 = R2 VOUT 1.237V -1 SW FB GND VIN SHDN LM2705 SNVS191E –NOVEMBER 2002–REVISED MAY 2013 www.ti.com Connection Diagram Top View The maximum allowablepower dissipationisa functionofthemaximum junctiontemperature,TJ(MAX),thejunction- to-ambientthermalresistance,θJA,and theambienttemperature,TA.See theElectricalCharacteristicstableforthe thermalresistance.The maximum allowablepower dissipationatany ambienttemperatureiscalculatedusing:PD (MAX) = (TJ(MAX) − TA)/θJA.Exceedingthemaximum allowablepower dissipationwillcause excessivedie temperature. Figure2. SOT23-5 TJmax = 125°C, θJA = 220°C/W PIN DESCRIPTIONS Pin Name Function 1 SW Power Switchinput. 2 GND Ground. 3 FB Outputvoltagefeedbackinput. 4 SHDN Shutdown controlinput,activelow. 5 VIN Analogand Power input. SW(Pin 1):SwitchPin. ThisisthedrainoftheinternalNMOS power switch.Minimizethemetaltracearea connectedtothispintominimizeEMI. GND(Pin 2):Ground Pin. Tiedirectlytogroundplane. FB(Pin 3):Feedback Pin. Settheoutputvoltageby selectingvaluesforR1 and R2 using: (1) Connectthegroundofthefeedbacknetworktoan AGND planewhichshouldbe tieddirectly totheGND pin. SHDN(Pin 4):Shutdown Pin. The shutdownpinisan activelowcontrol.Tiethispinabove 1.1Vtoenablethedevice.Tie thispinbelow0.3Vtoturnoffthedevice. VIN(Pin5):InputSupplyPin. Bypass thispinwitha capacitoras closetothedeviceas possible. These deviceshave limitedbuilt-inESD protection.The leadsshouldbe shortedtogetherorthedeviceplacedinconductivefoam duringstorageorhandlingtopreventelectrostaticdamage totheMOS gates.

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www.ti.com SNVS191E –NOVEMBER 2002–REVISED MAY 2013 AbsoluteMaximum Ratings(1)(2) VIN 7.5V SW Voltage 21V FB Voltage 2V SHDN Voltage 7.5V Maximum JunctionTemp. TJ(3) 150°C Lead Temperature (Soldering10 sec.) 300°C Vapor Phase (60sec.) 215°C Infrared (15sec.) 220°C ESD Ratings(4) Human Body Model 2kV Machine Model (5) 200V (1) Absolutemaximum ratingsarelimitsbeyond whichdamage tothedevicemay occur.OperatingRatingsareconditionsforwhichthe deviceisintendedtobe functional.Forspecificationsand testconditions,see theElectricalCharacteristics. (2) IfMilitary/Aerospacespecifieddevicesarerequired,pleasecontacttheTISalesOffice/Distributorsforavailabilityand specifications. (3) The maximum allowablepower dissipationisa functionofthemaximum junctiontemperature,TJ(MAX),thejunction-to-ambientthermal resistance,θJA,and theambienttemperature,TA.See theElectricalCharacteristicstableforthethermalresistance.The maximum allowablepower dissipationatany ambienttemperatureiscalculatedusing:PD (MAX) = (TJ(MAX) − TA)/θJA.Exceedingthemaximum allowablepower dissipationwillcause excessivedietemperature. (4) The human body model isa 100 pF capacitordischargedthrougha 1.5kΩ resistorintoeach pin.The machine model isa 200 pF capacitordischargeddirectlyintoeach pin. (5) ESD susceptibilityusingthemachine model is150V forSW pin. OperatingConditions JunctionTemperature (1) −40°C to+125°C SupplyVoltage 2.2Vto7V SW VoltageMax. 20.5V (1) Alllimitsspecifiedatroom temperatureand attemperatureextremes.Allroom temperaturelimitsare100% productiontestedor specifiedthroughstatisticalanalysis.AlllimitsattemperatureextremesarespecifiedviacorrelationusingstandardStatisticalQuality Control(SQC) methods.Alllimitsareused tocalculateAverageOutgoingQualityLevel(AOQL). Copyright© 2002–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 3 ProductFolderLinks:LM2705

SNVS191E –NOVEMBER 2002–REVISED MAY 2013 www.ti.com ElectricalCharacteristics SpecificationsinstandardtypefaceareforTJ = 25°C and thoseinboldfacetypeapplyoverthefullOperatingTemperature Range (TJ = −40°C to+125°C).UnlessotherwisespecifiedVIN =2.2V. Min Typ MaxSymbol Parameter Conditions Units(1) (2) (1) IQ DeviceDisabled FB = 1.3V 40 70 DeviceEnabled FB = 1.2V 235 300 µA Shutdown SHDN = 0V 0.01 2.5 VFB FeedbackTripPoint 1.189 1.237 1.269 V ICL SwitchCurrentLimit 100 150 180 mA IB FB PinBiasCurrent FB = 1.23V (3) 30 120 nA VIN InputVoltageRange 2.2 7.0 V R DSON SwitchR DSON 0.7 1.6 Ω TOFF SwitchOffTime 400 ns ISD SHDN PinCurrent SHDN = VIN,TJ = 25°C 0 80 SHDN = VIN,TJ = 125°C 15 nA SHDN = GND 0 IL SwitchLeakage Current VSW = 20V 0.05 5 µA UVP InputUndervoltageLockout ON/OFF Threshold 1.8 V VFB Feedback Hysteresis 8 mV Hysteresis SHDN SHDN low 0.7 0.3 VThreshold SHDN High 1.1 0.7 θJA SOT23-5 ThermalResistance 220 °C/W (1) Alllimitsspecifiedatroom temperatureand attemperatureextremes.Allroom temperaturelimitsare100% productiontestedor specifiedthroughstatisticalanalysis.AlllimitsattemperatureextremesarespecifiedviacorrelationusingstandardStatisticalQuality Control(SQC) methods.Alllimitsareused tocalculateAverageOutgoingQualityLevel(AOQL). (2) Typicalnumbers areat25°C and representthemost likelynorm. (3) Feedback currentflowsintothepin.

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www.ti.com SNVS191E –NOVEMBER 2002–REVISED MAY 2013 TypicalPerformance Characteristics Enable Current DisableCurrent vs vs VIN VIN (PartSwitching) (PartNot Switching) Figure3. Figure4. Efficiency Efficiency vs vs Load Current Load Current Figure5. Figure6. SHDN Threshold Switch CurrentLimit vs vs VIN VIN Figure7. Figure8. Copyright© 2002–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 5 ProductFolderLinks:LM2705

-40 -20 0 20 40 60 80 100 120 JUNCTION TEMPERATURE (°C) 1.20 1.21 1.22 1.23 1.24 1.25 FEEDBACK TRIP POINT (V) FEEDBACK BIAS CURRENT (nA V nA LM2705 SNVS191E –NOVEMBER 2002–REVISED MAY 2013 www.ti.com TypicalPerformance Characteristics(continued) Switch R DSON FB TripPointand FB Pin Current vs vs VIN Temperature Figure9. Figure10. Output Voltage OffTime vs vs Load Current Temperature Figure11. Figure12. Step Response Start-Up/Shutdown VOUT = 20V,VIN = 3.0V VOUT = 20V,VIN = 3.0V 1)Load,0.5mA to5mA to0.5mA,DC 1)SHDN, 1V/div,DC 2)VOUT ,200mV/div,AC 2)IL,100mA/div,DC 3)IL,100mA/div,DC 3)VOUT ,10V/div,DC T = 100µs/div T = 400µs/div R L = 3.9kΩ Figure13. Figure14.

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www.ti.com SNVS191E –NOVEMBER 2002–REVISED MAY 2013 OPERATION Figure15. LM2705 Block Diagram VOUT = 20V,VIN = 2.7V,IOUT = 2.5mA 1)VSW ,20V/div,DC 2)InductorCurrent,100mA/div,DC 3)VOUT ,200mV/div,AC T = 10µs/div Figure16. TypicalSwitchingWaveform The LM2705 featuresa constantoff-timecontrolscheme. Operationcan be best understoodby referringto Figure15 and Figure16.TransistorsQ1 and Q2 and resistorsR3 and R4 ofFigure15 forma bandgap reference used to controlthe outputvoltage.When the voltageat the FB pinislessthan 1.237V,the Enable Comp in Figure15 enablesthedeviceand theNMOS switchisturnedon pullingtheSW pintoground.When theNMOS switchison,currentbeginstoflowthroughinductorL whiletheloadcurrentissuppliedby theoutputcapacitor C OUT .Once thecurrentintheinductorreachesthecurrentlimit,theCL Comp tripsand the400ns One Shotturns Copyright© 2002–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 7 ProductFolderLinks:LM2705

L2 = 2 VOUT + VD ICL TOFF IPK = ICL + VIN(max) L 100 ns VOUT - VIN(min) + VD ICL L = T OFF LM2705 SNVS191E –NOVEMBER 2002–REVISED MAY 2013 www.ti.com offthe NMOS switch.TheSW voltagewillthen riseto the outputvoltageplusa diodedrop and the inductor currentwillbegin to decrease as shown in Figure16. Duringthistime the energy storedin the inductoris transferredtoC OUT and theload.Afterthe400ns off-timetheNMOS switchisturnedon and energyisstoredin theinductoragain.Thisenergytransferfrom theinductortotheoutputcauses a steppingeffectintheoutput rippleas shown inFigure16. This cycleiscontinueduntilthe voltageat FB reaches 1.237V.When FB reaches thisvoltage,the enable comparatorthendisablesthedeviceturningofftheNMOS switchand reducingtheIqofthedeviceto40uA. The loadcurrentisthensuppliedsolelyby C OUT indicatedby thegraduallydecreasingslopeattheoutputas shown in Figure16. When the FB pin drops slightlybelow 1.237V,the enable comparatorenablesthe deviceand beginsthecycledescribedpreviously.The SHDN pincan be used toturnofftheLM2705 and reducetheIq to 0.01µA.Inshutdownmode theoutputvoltagewillbe a diodedroplowerthantheinputvoltage.

APPLICATION INFORMATION

INDUCTOR SELECTION -BOOST REGULATOR The appropriateinductorfora givenapplicationiscalculatedusingthefollowingequation: (2) where VD is the schottkydiode voltage,ICL is the switchcurrentlimitfound in the TypicalPerformance Characteristicssection,and TOFF istheswitchofftime.When usingthisequationbe suretouse theminimum inputvoltageforthe application,such as forbatterypowered applications.For the LM2705 constant-offtime controlscheme, theNMOS power switchisturnedoffwhen thecurrentlimitisreached.There isapproximatelya 100ns delayfrom thetimethecurrentlimitisreachedintheNMOS power switchand when theinternallogic actuallyturnsoffthe switch.Duringthis100ns delay,the peak inductorcurrentwillincrease.Thisincreasein inductorcurrentdemands a largersaturationcurrentratingforthe inductor.This saturationcurrentcan be approximatedby thefollowingequation: (3) ChoosinginductorswithlowESR decreasepower lossesand increaseefficiency. Care shouldbe takenwhen choosingan inductor.For applicationsthatrequirean inputvoltagethatapproaches theoutputvoltage,such as when convertinga Li-Ionbatteryvoltageto5V,the400ns offtimemay notbe enough timetodischargetheenergyintheinductorand transfertheenergytotheoutputcapacitorand load.Thiscan cause a rampingeffectintheinductorcurrentwaveform and an increasedrippleon theoutputvoltage.Usinga smallerinductorwillcause theIPK toincreaseand willincreasetheoutputvoltageripplefurther. For typicalcurves and evaluationpurposes the DT1608C seriesinductorsfrom Coilcraftwere used. Other acceptableinductorswould include,but are not limitedto,the SLF6020T seriesfrom TDK, the NP05D series fromTaiyoYuden,theCDRH4D18 seriesfromSumida,and theP1166 seriesfromPulse. INDUCTOR SELECTION -SEPIC REGULATOR The followingequationcan be used tocalculatetheapproximateinductorvaluefora SEPIC regulator: (4) The boost inductor,L1, can be smalleror largerbut isgenerallychosen to be the same valueas L2. See Figure23 and Figure24 fortypicalSEPIC applications. DIODE SELECTION To maintainhighefficiency,the average currentratingof the schottkydiodeshouldbe largerthan the peak inductorcurrent,IPK .Schottkydiodeswitha low forwarddropand fastswitchingspeeds areidealforincreasing efficiencyinportableapplications.Choose a reversebreakdown of the schottkydiodelargerthan the output voltage.

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www.ti.com SNVS191E –NOVEMBER 2002–REVISED MAY 2013 CAPACITOR SELECTION Choose lowESR capacitorsfortheoutputtominimizeoutputvoltageripple.Multilayerceramiccapacitorsarethe bestchoice.For most applications,a 1µF ceramiccapacitorissufficient.For some applicationsa reductionin outputvoltageripplecan be achievedby increasingthe outputcapacitor.Outputvoltageripplecan furtherbe reduced by adding a 4.7pF feed-forwardcapacitorin the feedbacknetworkplacedin parallelwithRF1, see Figure15. Localbypassingfortheinputisneeded on theLM2705. Multilayerceramiccapacitorsarea good choiceforthis as well.A 4.7µF capacitorissufficientformost applications.For additionalbypassing,a 100nF ceramiccapacitor can be used toshunthighfrequencyrippleon theinput. LAYOUT CONSIDERATIONS The inputbypass capacitorC IN,as shown inFigure1,must be placedclosetotheIC.Thiswillreducecopper traceresistancewhicheffectsinputvoltagerippleoftheIC.For additionalinputvoltagefiltering,a 100nF bypass capacitorcan be placedinparallelwithC IN toshuntany highfrequencynoisetoground.The outputcapacitor, C OUT ,shouldalsobe placedclosetotheIC.Any coppertraceconnectionsfortheCout capacitorcan increase theseriesresistance,which directlyeffectsoutputvoltageripple.The feedbacknetwork,resistorsR1 and R2, shouldbe keptclosetotheFB pintominimizecoppertraceconnectionsthatcan injectnoiseintothesystem. The groundconnectionforthefeedbackresistornetworkshouldconnectdirectlytoan analoggroundplane.The analog ground plane shouldtiedirectlyto the GND pin.Ifno analog ground plane isavailable,the ground connectionforthefeedbacknetworkshouldtiedirectlytotheGND pin.Traceconnectionsmade totheinductor and schottkydiodeshouldbe minimizedtoreducepower dissipationand increaseoverallefficiency. Figure17.Output RippleVoltage Figure18.Output RippleVoltage Copt /Ropt included Copt /Ropt excluded Copyright© 2002–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 9 ProductFolderLinks:LM2705

2.5V-4.2V 82: SW FBGND VIN SHDN D 4>1.1V CeramicLM2705 L 33 PH C IN: Taiyo Yuden Ceramic C OUT : Taiyo Yuden Ceramic L: Coilcraft DT1608C-333 D: ON Semiconductor MBRM130LT3 C OUT 1 PF C IN 4.7 PF Ceramic VIN 2.5V-4.2V 82: SW FBGND VIN SHDN D 4>1.1V CeramicLM2705 L 33 PH C IN: Taiyo Yuden Ceramic C OUT : Taiyo Yuden Ceramic L: Coilcraft DT1608C-333 D: ON Semiconductor MBRM130LT3 C OUT 1 PF C IN 4.7 PF Ceramic LM2705 SNVS191E –NOVEMBER 2002–REVISED MAY 2013 www.ti.com Figure19. 2 White LED Applicationand Efficiency Figure20. 3 White LED Applicationand Efficiency

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33 PH D

4.7 PF C IN: Taiyo Yuden Ceramic C OUT : Taiyo Yuden Ceramic L: Coilcraft DT1608C-333 D: ON Semiconductor MBRM130LT3 GND FB SWVIN SHDN VIN 2.5V - 4.2V L 4.7 PF C IN: Taiyo Yuden Ceramic C OUT : Taiyo Yuden Ceramic L: Coilcraft DT1608C-333 D: ON Semiconductor MBRM130LT3 LM2705 www.ti.com SNVS191E –NOVEMBER 2002–REVISED MAY 2013 Figure21. Li-Ion12V Application Figure22. 5V to12V Application Copyright© 2002–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 11 ProductFolderLinks:LM2705

2.5V - 7V 33PH D C IN 4.7PF C OUT 10PF 20mA 330k LM2705 Csepic 1PF 33PH Csepic: Taiyo Yuden Ceramic C IN: Taiyo Yuden Ceramic C OUT : Taiyo Yuden Ceramic L1, L2: Coilcraft DT1608C-333 D: ON Semiconductor MBRM130LT3 GND FB SWVIN SHDN VIN 2.5V - 5.5V 22PH D C IN 4.7PF C OUT 10PF 3.3V 30mA 180k 110k LM2705 Csepic 1PF 22PH Csepic: Taiyo Yuden Ceramic C IN: Taiyo Yuden Ceramic C OUT : Taiyo Yuden Ceramic L1, L2: Coilcraft DT1608C-223 D: ON Semiconductor MBRM130LT3 LM2705 SNVS191E –NOVEMBER 2002–REVISED MAY 2013 www.ti.com Figure23. 3.3VSEPIC Application Figure24. 5V SEPIC Application

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www.ti.com SNVS191E –NOVEMBER 2002–REVISED MAY 2013

REVISION HISTORY

www.ti.com 1-Nov-2013 Addendum-Page 1 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Drawing Pins Package Qty Eco Plan (2) Lead/Ball Finish (6) MSL Peak Temp (3) Op Temp (°C) Device Marking (4/5) Samples LM2705MF-ADJ NRND SOT-23 DBV 5 1000 TBD Call TI Call TI -40 to 85 S59B LM2705MF-ADJ/NOPB ACTIVE SOT-23 DBV 5 1000 Green (RoHS & no Sb/Br) CU SN Level-1-260C-UNLIM -40 to 85 S59B LM2705MFX-ADJ/NOPB ACTIVE SOT-23 DBV 5 3000 Green (RoHS & no Sb/Br) CU SN Level-1-260C-UNLIM -40 to 85 S59B (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability information and additional product content details. TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above. Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material) (3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. (4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device. (5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation of the previous line and the two combined represent the entire Device Marking for that device. (6) Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish value exceeds the maximum column width. Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and

www.ti.com 1-Nov-2013 Addendum-Page 2 continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release. In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.

*All dimensions are nominal Device Package Type Package Drawing Pins SPQ Reel Diameter (mm) Reel Width W1 (mm) (mm) (mm) (mm) (mm) W (mm) Pin1 Quadrant PACKAGE MATERIALS INFORMATION www.ti.com 23-Sep-2013 Pack Materials-Page 1

*All dimensions are nominal Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) LM2705MF-ADJ SOT-23 DBV 5 1000 210.0 185.0 35.0 LM2705MF-ADJ/NOPB SOT-23 DBV 5 1000 210.0 185.0 35.0 LM2705MFX-ADJ/NOPB SOT-23 DBV 5 3000 210.0 185.0 35.0 PACKAGE MATERIALS INFORMATION www.ti.com 23-Sep-2013 Pack Materials-Page 2

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