LM2609

LM2609 LEIDITECH | Alldatasheet

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Technical content

Features Package Dimensions

• LowOnresistance. 4.5Vdrive.
• RoHScompliant. Specifications Absolute Maximum Ratings atTa=250C Parameter Symbol Conditions N-Cha nnel P-Cha nnel Unit Drain-to-SourceVoltage VDSS 20 -20 V Gate-to-SourceVoltage VGSS + 12 + 12 V Drain Current(DC) ID 3.5 -2.5 A Drain Current(Pulse) IDP PW≤10uS,duty cycle≤1% 14 10 A Allowable PowerDissipation PD Mounted on a ceramic board (1000mm2×0.8mm) 1unit 1.14 1.14 W Total Dissipation PT Mountedon aceramic board (1000mm2×0.8mm) 1.14 W ChannelTemperature Tch 150 0C StorageTemperature Tstg -55~+15 N-Channel Electrical Characteristics atTa=250C Parameter Symbol Conditions Ratings Unitmin Typ max Drain-to-Source BreakdownVoltage V(BR)DSS ID=250uA,VGS=0V 20 - - V Zero-GateVoltage Drain Current IDSS VDS=20V,VGS=0V - - 1 uA TSOP-6 N and P-Channel Enhancement Mode Power MOSFET LM2609 Rev : www.leiditech.com 01.06.2018 1/6

Gate-to-SourceLeakageCurrent IGSS VGS=12V,VDS=0V - - 100 nA GateThreshold Voltage VGS(th) VDS=VGS,ID=250uA 0.4 1.2 V StaticDrain-to-SourceOn-State Resistance RDS(ON) ID=2.5A,VGS=4.5V - 28 35 mΩ RDS(ON) ID=2A,VGS=2.5V - 36 60 mΩ InputCapacitance Ciss VDS=10V,VGS=0V,f=1MHz - 380 - pF OutputCapacitance Coss VDS=10V,VGS=0V,f=1MHz - 90 - pF ReverseTransferCapacitance Crss VDS=10V,VGS=0V,f=1MHz - 60 - pF N-Channel Electrical Characteristics atTa=250C (Continued) Parameter Symbol Conditions Ratings Unitmin Typ max Turn-on DelayTime td(on) VDS=10V,RGEN=6Ω,ID=3.5A,VGS=4.5V - 16 nS RiseTime tr - 16 nS Turn-offDelayTime td(off) - 32 nS FallTime tf - 7 nS Total Gate Charge Qg VDS=10V,VGS=3.3V,ID=3.5A - 3.6 nC Gate-to-SourceCharge Qgs - 1.0 - nC Gate-to-Drain “Miller”Charge Qgd - 1.2 - nC Diode ForwardVoltage VSD IS=1A,VGS=0V - 1.1 V P-Channel Electrical Characteristics atTa=250C Parameter Symbol Conditions Ratings Unitmin Typ max Drain-to-Source BreakdownVoltage V(BR)DSS ID=-250uA,VGS=0V -20 - - V Zero-GateVoltage Drain Current IDSS VDS=-16V,VGS=0V - - -1 uA Gate-to-SourceLeakageCurrent IGSS VGS=-12V,VDS=0V - - -100 nA GateThreshold Voltage VGS(th) VDS=VGS,ID=-250uA -0.4 -1.2 V StaticDrain-to-SourceOn-State Resistance RDS(ON) ID=-2.5A,VGS=-4.5V - 60 85 mΩ RDS(ON) ID=-1.5A,VGS=-2.5V - 90 115 mΩ InputCapacitance Ciss VDS=-10V,VGS=0V,f=1MHz - 375 - pF OutputCapacitance Coss VDS=-10V,VGS=0V,f=1MHz - 90 - pF ReverseTransferCapacitance Crss VDS=-10V,VGS=0V,f=1MHz - 60 - pF P-Channel Electrical Characteristics atTa=250C (Continued) Parameter Symbol Conditions Ratings Unitmin Typ max Turn-on DelayTime td(on) VDS=-10V,RGEN=3Ω, ID=-2.5A,VGS=-4.5V - 17 nS RiseTime tr - 17 nS Turn-offDelayTime td(off) - 27 nS FallTime tf - 7 nS Total Gate Charge Qg VDS=-10V,VGS=-3.3V,ID=-2.0A - 2.9 nC Gate-to-SourceCharge Qgs - 0.46 - nC LM2609 Rev : www.leiditech.com 01.06.2018 2/6

Gate-to-Drain “Miller”Charge Qgd - 1.2 - nC Diode ForwardVoltage VSD IS=-1A,VGS=0V - 1.1 V Typical Characteristics atTa=250C LM2609 Rev : www.leiditech.com 01.06.2018 3/6

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Shanghai Leiditech Electronic Co.,Ltd Email: sale1@leiditech.com Tel : +86- 021 50828806 Fax : +86- 021 50477059 Rev : www.leiditech.com 01.06.2018 6/6