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Y Guaranteed drift of LM321AÐ0.2 mV/§C Y Guaranteed drift of LM221 seriesÐ1 mV/§C Y Offset voltage less than 0.4 mV Y Bias current less than 10 nA at 10 mA operating current Y CMRR 126 dB minimum Y 120 dB supply rejection Y Easily nulled offset voltage Typical Applications Thermocouple Amplifier with Cold Junction Compensation TL/H/7769 1 *Set for 2.98V at output with LM113 shorted. Output should equal ambi- ent temperature at 10 mV/ §K. ²Adjust for output reading in §C. C1995 National Semiconductor Corporation RRD B30M115/Printed in U S A

Power Dissipation (Note 1) 500 mW Differential Input Voltage (Notes 2 and 3) g15V Input Voltage (Note 3) g15V Operating Temperature Range LM321A 0 §Ct o a70§C Storage Temperature Range b65§Ct o a150§C Lead Temperature (Soldering, 10 sec.) 300 §C ESD rating to be determined. Parameter Conditions LM321A Units Min Typ Max Input Offset Voltage TA 25§C, 6.4k s RSET s 70k 0.2 0.4 mV Input Offset Current TA 25§C, RSET 70k 0.3 0.5 nA RSET 6.4k 5 nA Input Bias Current TA 25§C, RSET 70k 5 15 nA RSET 6.4k 50 150 nA Input Resistance TA 25§C, RSET 70k 2 8 MX RSET 6.4k 0.2 MX Supply Current TA 25§C, R SET 70k 0.8 2.2 mA Input Offset Voltage 6.4k s RSET s 70k 0.5 0.65 mV Input Bias Current RSET 70k 15 25 nA RSET 6.4k 150 250 nA Input Offset Current RSET 70k 0.5 1 nA RSET 6.4k 5 10 nA Input Offset Current Drift R SET 70k 3 pA/§C Average Temperature RS s 200X, 6.4k s RSET s 70k Coefficient of Input Offset Offset Voltage Nulled Voltage 0.07 0.2 mV/§C Long Term Stability 3 mV/yr Supply Current 1 3.5 mA Input Voltage Range VS g15V, (Note 5) RSET 70k g13 V RSET 6.4k a7, b13 V Common-Mode Rejection R SET 70k 126 140 dB Ratio RSET 6.4k 120 130 dB Supply Voltage Rejection R SET 70k 118 126 dB Ratio RSET 6.4k 114 120 dB Voltage Gain TA 25§C, R SET 70k, RL l 3M X 12 20 V/V Noise RSET 70k, R SOURCE 0 8 nV/0Hz Note 1: The maximum junction temperature of the LM321A is 85 §C. For operating at elevated temperature, devices in the H08 package must be derated based on a thermal resistance of 150 §C/W, junction to ambient, or 18 §C/W, junction to case. Note 2: The inputs are shunted with back-to-back diodes in series with a 500 X resistor for overvoltage protection. Therefore, excessive current will flow if a differential input voltage in excess of 1V is applied between the inputs. Note 3: For supply voltages less than g15V, the absolute maximum input voltage is equal to the supply voltage. Note 4: These specifications apply for g5 s VS s g20V and 55 §C s TA s a125§C, unless otherwise specified. With the LM221A, however all temperature specifications are limited to 25§C s TA s a85§C, and for the LM321A the specifications apply over a 0 §Ct o a70§C temperature range. Note 5: External precision resistor Ð0.1%Ð can be placed from pins 1 and 8 to 7 increase positive common-mode range. Note 6: See RETS121X for LM121H/883 military specs and RET121AX for LM121AH/883 military specs.

If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/Distributors for availability and specifications. Supply Voltage g20V Power Dissipation (Note 1) 500 mW Differential Input Voltage (Notes 2 and 3) g15V Input Voltage (Note 3) g15V Operating Temperature Range LM221, LM121A (-883), LM121 (-883) b25§Ct o a85§C LM321, LM321A 0 §Ct o a70§C Storage Temperature Range b65§Ct o a150§C Lead Temperature (Soldering, 10 sec.) 260 §C ESD rating to be determined. Parameter Conditions LM221 LM321 Units Min Typ Max Min Typ Max Input Offset Voltage T A 25§C, 6.4k s RSET s 70k 0.7 1.5 mV Input Offset Current T A 25§C, RSET 70k 1 2 nA RSET 6.4k 10 20 nA Input Bias Current T A 25§C, RSET 70k 10 18 nA RSET 6.4k 100 180 nA Input Resistance TA 25§C, RSET 70k 4 2 MX RSET 6.4k 0.4 0.2 MX Supply Current TA 25§C, R SET 70k 1.5 2.2 mA Input Offset Voltage 6.4k s RSET s 70k 1.0 2.5 mV Input Bias Current R SET 70k 30 28 nA RSET 6.4k 300 280 nA Input Offset Current R SET 70k 3 4 nA RSET 6.4k 30 40 nA Input Offset Current Drift R SET 70k 3 3 pA/§C Average Temperature R S s 200X, 6.4k s RSET s 70k Coefficient of Input Offset Voltage Nulled 1 1 mV/§C Offset Voltage Long Term Stability 5 5 mV/yr Supply Current 2.5 3.5 mA Input Voltage Range V S g15V, (Note 5) RSET 70k g13 g13 V RSET 6.4k a7, b13 a7, b13 V Common-Mode Rejection R SET 70k 120 114 dB Ratio R SET 6.4k 114 114 dB Supply Voltage Rejection R SET 70k 120 114 dB Ratio R SET 6.4k 114 114 dB Voltage Gain TA 25§C, R SET 70k, RL l 3M X 16 12 V/V Noise RSET 70k, R SOURCE 0 8 8 nV/0Hz Note 1: The maximum junction temperature of the LM221 is 100 §C. The maximum junction temperature of the LM321 is 85 §C. For operating at elevated temperature, devices in the H08 package must be derated based on a thermal resistance of 150 §C/W, junction to ambient, or 18 §C/W, junction to case. Note 2: The inputs are shunted with back-to-back diodes in series with a 500 X resistor for overvoltage protection. Therefore, excessive current will flow if a differential input voltage in excess of 1V is applied between the inputs. Note 3: For supply voltages less than g15V, the absolute maximum input voltage is equal to the supply voltage. Note 4: These specifications apply for g5 s VS s g20V and 55 §C s TA s a125§C, unless otherwise specified. With the LM221, however all temperature specifications are limited to 25§C s TA s a85§C, and for the LM321 the specifications apply over a 0 §Ct o a70§C temperature range. Note 5: External precision resistor Ð0.1%Ð can be placed from pins 1 and 8 to 7 increase positive common-mode range.

Typical Performance Characteristics Input Bias Current Voltage Drift (Nulled) Distribution of Offset Voltage Drift (Nulled) Distribution of Offset Rejection Positive Power Supply Rejection Negative Power Supply Input Noise Voltage Input Noise Current Voltage Drift Differential Voltage Gain Set Resistor and Set Current Set Current Common-Mode Limits TL/H/7769 9

Typical Performance Characteristics (Continued) Common-Mode Limits Output Common-Mode Voltage Differential Voltage Gain Supply Current Offset Voltage Adjustment Ratio Common-Mode Rejection TL/H/7769 10 Connection Diagram Metal Can Package TL/H/7769 7 Top View Note: Pin 4 connected to case. Order Number LM121AH/883, LM121H/883, LM221H, LM321H or LM321AH See NS Package Number H08C Note: Outputs are inverting from the input of the same number.

TL/H/7769–8

follower or integratorÐand the gain of the LM321 is high. erate with any unity-gain stable op amp. the bandwidth may be increased to about 2 MHz.

106 ACL RSET

pacitors for various gains and operating currents. This table applies for the LM108, LM101A, LM741, LM118. ²See table for frequency compensation. FIGURE 1. Low Drift Op Amp Using the LM321A as a Preamp

Typical Applications (Continued) Gain of 1000 Instrumentation Amplifier ³ TL/H/7769 3 *Offset adjust ²Gain trim ³Better than 1% linearity for input sig- nals up to g10 mV gain stability typi- cal a2% from 55 to a125§C. Match of R5 and R6 effect power supply rejection High Speed* Inverting Amplifier with Low Drift *Bandwidth 10 MHz Slew Rate 40 V/ ms TL/H/7769 4 Medium Speed* General Purpose Amplifier *Bandwidth 3.5 MHz Slew Rate 1.1 V/ ms TL/H/7769 5

Typical Applications (Continued) Increased Common-Mode Range at High Operating Currents *Match to 0.1% ²Depends on close loop gain TL/H/7769 6

LM221/LM321 Precision Preamplifiers Physical Dimensions inches (millimeters) Metal Can Package (H) Order Number LM221H, LM321H or LM321AH LIFE SUPPORT POLICY NATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF NATIONAL SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life systems which, (a) are intended for surgical implant support device or system whose failure to perform can into the body, or (b) support or sustain life, and whose be reasonably expected to cause the failure of the life failure to perform, when properly used in accordance support device or system, or to affect its safety or with instructions for use provided in the labeling, can effectiveness. be reasonably expected to result in a significant injury to the user. National Semiconductor National Semiconductor National Semiconductor National Semiconductor Corporation Europe Hong Kong Ltd. Japan Ltd.

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Arlington, TX 76017 Email: cnjwge @ tevm2.nsc.com Ocean Centre, 5 Canton Rd. Fax: 81-043-299-2408 Tel: 1(800) 272-9959 Deutsch Tel: ( a49) 0-180-530 85 85 Tsimshatsui, Kowloon Fax: 1(800) 737-7018 English Tel: ( a49) 0-180-532 78 32 Hong Kong Fran3ais Tel: ( a49) 0-180-532 93 58 Tel: (852) 2737-1600 Italiano Tel: ( a49) 0-180-534 16 80 Fax: (852) 2736-9960 National does not assume any respons bility for use of any circuitry described, no circuit patent l censes are implied and National reserves the right at any t me without notice to change said circuitry and specificat ons