LM212-N

LM112_11 TI1 | Alldatasheet

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LM112,LM212,LM312 LM112 LM212 LM312 Operational Amplifiers Literature Number: SNOSBR9A

LM112/LM212/LM312 Operational Amplifiers September 1992 LM112/LM212/LM312 Operational Amplifiers General Description The LM112 series are micropower operational amplifiers with very low offset-voltage and input-current errorsÐat least a factor of ten better than FET amplifiers over a b55§Ct o a125§C temperature range. Similar to the LM108 series, that also use supergain transistors, they differ in that they include internal frequency compensation and have pro- visions for offset adjustment with a single potentiometer. These amplifiers will operate on supply voltages of g2V to g20V, drawing a quiescent current of only 300 mA. Per- formance is not appreciably affected over this range of volt- ages, so operation from unregulated power sources is easily accomplished. They can also be run from a single supply like the 5V used for digital circuits. The LM112 series are the first IC amplifiers to improve reli- ability by including overvoltage protection for the MOS com- pensation capacitor. Without this feature, IC’s have been known to suffer catastrophic failure caused by short-dura- tion overvoltage spikes on the supplies. Unlike other inter- nally-compensated IC amplifiers, it is possible to overcom- pensate with an external capacitor to increase stability mar- gin. The LM212 is identical to the LM112, except that the LM212 has its performance guaranteed over a b25§Ct o a85§C temperature range instead of b55§Ct o a125§C. The LM312 is guaranteed over a 0 §Ct o a70§C temperature range.

Features

Y Maximum input bias current of 3 nA over temperature Y Offset current less than 400 pA over temperature Y Low noise Y Guaranteed drift specifications Connection Diagram Metal Can Package TL/H/7751–4 Top View Order Number LM112H, LM212H, LM312H or LM112H/883 See NS Package Number H08C Auxiliary Circuits Offset Balancing TL/H/7751–2 Overcompensation for Greater Stability Margin TL/H/7751–3 C1995 National Semiconductor Corporation RRD-B30M115/Printed in U. S. A. Obsolete

If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/Distributors for availability and specifications. (Note 5) LM112/LM212 LM312 Supply Voltage g20V g18V Power Dissipation (Note 1) 500 mW 500 mW Differential Input Current (Note 2) g10 mA g10 mA Input Voltage (Note 3) g15V g15V Output Short-Circuit Duration Continuous Continuous Operating Temperature Range LM112 b55§Ct o a125§C0 §Ct o a70§C LM212 b25§Ct o a85§C Storage Temperature Range b65§Ct o a150§C b65§Ct o a150§C Lead Temperature (Soldering, 10 sec.) 300 §C 300§C ESD rating to be determined. Electrical Characteristics (Note 4) Parameter Conditions LM112/LM212 LM312 Units Min Typ Max Min Typ Max Input Offset Voltage TA e 25§C 0.7 2.0 2.0 7.5 mV Input Offset Current TA e 25§C 0.05 0.2 0.2 1 nA Input Bias Current TA e 25§C 0.8 2.0 1.5 7 nA Input Resistance TA e 25§C3 0 70 1 0 40 M X Supply Current TA e 25§C 0.3 0.6 0.3 0.8 mA Large Signal Voltage Gain T A e 25§C, V S e g15V 50 300 25 300 V/mVVOUT e g10V, R L t 10 k X Input Offset Voltage 3.0 10 mV Average Temperature Coefficient of Input 3.0 15 6.0 30 mV/§C Offset Voltage Input Offset Current 0.4 1.5 nA Average Temperature Coefficient of Input 0.5 2.5 2.0 10 pA/ §C Offset Current Input Bias Current 3.0 10 nA Supply Current TA e 125§C 0.15 0.4 mA Large Signal Voltage Gain V S e g15V, V OUT e g10V RL t 10 k X 25 15 V/mV Output Voltage Swing VS e g15V, R L e 10 k X g13 g14 g13 g14 V Input Voltage Range VS e g15V g13.5 g14 V Common-Mode Rejection Ratio 85 100 80 100 dB Supply Voltage Rejection Ratio 80 96 80 96 dB Note 1: The maximum junction temperature of the LM112 is 150 §C, LM212 is 100 §C and LM312 is 85 §C. For operating at elevated temperatures, devices in the H08 package must be derated based on a thermal resistance of 160 §C/W, junction to ambient, or 20 §C/W, junction to case. Note 2: The inputs are shunted with shunt diodes for overvoltage protection. Therefore, excessive current will flow if a differential input voltage in excess of 1V is applied between the inputs unless some limiting resistance is used. Note 3: For supply voltages less than g15V, the absolute maximum input voltage is equal to the supply voltage. Note 4: These specifications apply for g5V s VS s g20V and b55§C s TA s a125§C (LM112), b25§C s TA s a85§C (LM212), g5V s VS s g15V and 0§ C s TA s a70§C (LM312) unless otherwise noted. Note 5: Refer to RETS112X for LM112H military specifications. Obsolete

Typical Performance Characteristics LM112/LM212 Input Currents Offset Error Drift Error Input Noise Voltage Power Supply Rejection Output Impedance Closed Loop Voltage Gain Output Swing Supply Current Response Open Loop Frequency Response Large Signal Frequency Response Voltage Follower Pulse TL/H/7751–5 Obsolete

Typical Performance Characteristics LM312 Input Currents Offset Error Drift Error Input Noise Voltage Power Supply Rejection Output Impedance Closed Loop Voltage Gain Output Swing Supply Current Response Open Loop Frequency Response Large Signal Frequency Response Voltage Follower Pulse TL/H/7751–6 Obsolete

TL/H/7751–1 Obsolete

LM112/LM212/LM312 Operational Amplifiers Physical Dimensions inches (millimeters) Metal Can Package (H) Order Number LM112H, LM212H, LM312H or LM112H/883 LIFE SUPPORT POLICY NATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF NATIONAL SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life systems which, (a) are intended for surgical implant support device or system whose failure to perform can into the body, or (b) support or sustain life, and whose be reasonably expected to cause the failure of the life failure to perform, when properly used in accordance support device or system, or to affect its safety or with instructions for use provided in the labeling, can effectiveness. be reasonably expected to result in a significant injury to the user. National Semiconductor National Semiconductor National Semiconductor National Semiconductor Corporation Europe Hong Kong Ltd. Japan Ltd.

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Arlington, TX 76017 Email: cnjwge @ tevm2.nsc.com Ocean Centre, 5 Canton Rd. Fax: 81-043-299-2408 Tel: 1(800) 272-9959 Deutsch Tel: ( a49) 0-180-530 85 85 Tsimshatsui, Kowloon Fax: 1(800) 737-7018 English Tel: ( a49) 0-180-532 78 32 Hong Kong Fran3ais Tel: ( a49) 0-180-532 93 58 Tel: (852) 2737-1600 Italiano Tel: ( a49) 0-180-534 16 80 Fax: (852) 2736-9960 National does not assume any responsibility for use of any circuitry described, no circuit patent licenses are implied and National reserves the right at any time without notice to change said circuitry and specifications. Obsolete

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