LM2005 NSC | Alldatasheet
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Technical content
Features
Y Wide supply range (8V–18V) Y Externally programmable gain Y With or without bootstrap Y Low distortion Y Low noise Y High peak current capability Y POe20W bridge Y High voltage protection Y AC and DC output short circuit protection to ground or across load Y Thermal protection Y Inductive load protection Y Accidental open ground protection Y Immunity to 40V power supply transients Y 3§C/W device dissipation Y Pin for pin compatible with TDA2005 Connection Diagram Plastic Package TL/H/5129–1 Order Number LM2005T-S or LM2005T-M See NS Package Number TA11A Typical Application TL/H/5129–2 FIGURE 1. 20W Bridge Amplifier Application and Test Circuit C1995 National Semiconductor Corporation RRD-B30M115/Printed in U. S. A.
If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/Distributors for availability and specifications. Operating Supply Voltage 18V DC Supply Voltage (Note 1) 28V Peak Supply Voltage (50 ms) 40V Output Current Repetitive (Note 2) 3.5A Non-Repetitive 4.5A Power Dissipation 30W Operating Temperature b40§Ct o a85§C Storage Temperature b60§Ct o a150§C Lead Temp. (Soldering, 10 seconds) 260 §C LM2005T-M Electrical Characteristics Refer to the bridge application circuit, Figure 1 ,T amb e 25§C, A V e 50 dB, Rth (heatsink) e 4§C/W, unless otherwise specified Parameter Test Conditions Min Typ Max Units Supply Voltage 81 8 V Output Offset Voltage (Note 3) V S e 14.4V g20 g150 mV (between Pin 8 and 10) V S e 13.2V g150 mV Total Quiescent Drain Current V S e 14.4V R L e 4X 75 150 mA Includes Current in Feedback Resistors V S e 13.2V R L e 3.2X 70 160 mA Output Power d e 10% f e 1 kHz VS e 14.4V R L e 4X 18 20 W RL e 3.2X 20 22 W VS e 13.2V R L e 3.2X 17 19 W THD f e 1 kHz VS e 14.4V R L e 4X PO e 50 mW to 15W 1 % VS e 13.2V R L e 3.2X PO e 50 mW to 13W 1 % Input Sensitivity f e 1 kHz PO e 2W R L e 4X 9m V PO e 2W R L e 3.2X 8m V Input Resistance f e 1 kHz 70 k X Low Frequency Roll Off ( b3 dB) R L e 3.2X 40 Hz High Frequency Roll Off ( b3 dB) R L e 3.2X 20 kHz Closed Loop Voltage Gain f e 1 kHz 45 50 dB Total Input Noise Voltage R g e 10 k X (Note 4) 3 10 mV Supply Voltage Rejection R g e 10 k X fripple e 100 Hz 45 55 dBC4 e 10 mFV ripple e 0.5V Efficiency V S e 14.4V f e 1 kHz PO e 20W R L e 4X 60 % PO e 22W R L e 3.2X 60 % VS e 13.2V f e 1 kHz PO e 19W R L e 3.2X 58 % Output Voltage with One Side V S e 14.4V R L e 4X 2Vof the Speaker Shorted to Ground V S e 13.2V R L e 3.2V Note 1: Internal voltage limit. Shuts down above 20V. Note 2: Internal current limit. Note 3: For LM2005T-M only. Note 4: Bandwidth filter: 22 Hz to 22 kHz.
Electrical Characteristics Refer to the stereo application circuit, Figure 2, Tamb e 25§C, G v e 50 dB, Rth (heatsink) e 4§C/W, unless otherwise specified Parameter Test Conditions Min Typ Max Units Supply Voltage 81 8 V Quiescent Output Voltage V S e 14.4V 6.6 7.2 7.8 V VS e 13.2V 6 6.6 7.2 V Total Quiescent Drain Current V S e 14.4V 65 120 mA Includes Current in Feedback Resistors V S e 13.2V 62 120 mA Output Power f e 1 kHz d e 10% (Each Channel) V S e 14.4V R L e 4X 6 6.5 W RL e 3.2X 78 W RL e 2X 91 0 W RL e 1.6X 10 11 W VS e 13.2V R L e 3.2X 6 6.5 W RL e 1.6X 91 0 W VS e 16V R L e 2X 12 W THD f e 1 kHz (Each Channel) V S e 14.4V R L e 4X PO e 50 mW to 4W 0.2 1 % VS e 14.4V R L e 2X PO e 50 mW to 6W 0.3 1 % VS e 13.2V R L e 3.2X PO e 50 mW to 3W 0.2 1 % VS e 13.2V R L e 1.6X PO e 40 mW to 6W 0.3 1 % Cross Talk V S e 14.4V f e 1 kHz 40 60 dB(Note 5) R L e 4X VO e 4V rms f e 10 kHz 40 dBRg e 5k X Input Saturation Voltage 300 mV Input Sensitivity f e 1 kHz P O e 1W RL e 4X 6 mVRL e 3.2X 5.5 Input Resistance f e 1 kHz Non-Inverting Input 70 200 k X Inverting Input 10 k X Low Frequency Roll Off ( b3 dB) R L e 2X 50 Hz High Frequency Roll Off ( b3 dB) R L e 2X 15 kHz Voltage Gain (Open Loop) f e 1 kHz 90 dB Voltage Gain (Closed Loop) f e 1 kHz 48 50 51 dB Closed Loop Gain Matching 0.5 dB Total Input Noise Voltage R g e 10 k X (Note 6) 1.5 5 mV Supply Voltage Rejection R g e 10 k X fripplee100 Hz 35 45 dBC3 e 10 mFV ripplee0.5V Efficiency V S e 14.4V f e 1 kHz RL e 4X PO e 6.5W 70 % RL e 2X PO e 10W 60 % VS e 13.2V f e 1 kHz RL e 3.2X PO e 6.5W 70 % RL e 1.6X PO e 10W 60 % Note 5: For LM2005T-S only. Note 6: Bandwidth filter: 22 Hz to 22 kHz.
TL/H/5129–3
- R1, R2 Sets voltage gain,
- R3 Adjusts output symmetry for maximum
- R O,C O Works to stabilize internal output
good high frequency capacitor.
- C1, C9 Input coupling capacitor. Low
- C4, C5 Bootstrap capacitors, used to increase
- C3 Improves power supply rejection.
(approximately 2 ms per mF).
- C2, C6 Inverting input DC decouple. Low
- C C Output coupling capacitor. Isolates
- C S Power supply filtering.
FIGURE 2. 10W/Channel Stereo Amplifier Application and Test Circuit
Typical Performance Characteristics Device Dissipation vs Ambient Temperature Supply Current vs Supply Voltage Output Offset Voltage vs Supply Voltage Power Output vs Supply Voltage Output Swing vs Supply Voltage Total Harmonic Distortion vs Frequency (Dual) Total Harmonic Distortion vs Power Output (Bridge) Total Harmonic Distortion vs Power Output (Dual) Power Supply Rejection Ratio (Referred to the Output) vs Frequency Channel Separation (Referred to the Output) vs Frequency Power Output vs Supply Voltage TL/H/5129–5
LM2005 20 Watt Automotive Power Amplifier Physical Dimensions inches (millimeters) Lit. Ý 107847 11-Lead TO-220 Power Package (T) Order Number LM2005T-S or LM2005T-M LIFE SUPPORT POLICY NATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF NATIONAL SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life systems which, (a) are intended for surgical implant support device or system whose failure to perform can into the body, or (b) support or sustain life, and whose be reasonably expected to cause the failure of the life failure to perform, when properly used in accordance support device or system, or to affect its safety or with instructions for use provided in the labeling, can effectiveness. be reasonably expected to result in a significant injury to the user. National Semiconductor National Semiconductor National Semiconductor National Semiconductor Corporation Europe Hong Kong Ltd. Japan Ltd.
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