LM193A_14 TI1 | Alldatasheet
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LM193A,LM193QML www.ti.com SNOSAM2C –MAY 2005–REVISED MARCH 2013 LM193A/LM193QMLLowPowerLowOffsetVoltageDualComparators Check forSamples: LM193A ,LM193QML 1FEATURES DESCRIPTION The LM193 series consistsof two independent 2• AvailablewithRadiationGuarantee precisionvoltagecomparatorswithan offsetvoltage– TotalIonizingDose 100 krad(Si) specificationas low as 2.0 mV max for two – ELDRS Free 100 krad(Si) comparators which were designed specificallyto operatefroma singlepower supplyovera widerange• Wide Supply of voltages.Operationfrom splitpower suppliesis– VoltageRange: 2.0VDC to36VDC alsopossibleand thelow power supplycurrentdrain – Singleor Dual Supplies:±1.0Vto±18V isindependentofthemagnitudeofthepower supply voltage.These comparators also have a unique• Very Low Supply CurrentDrain(0.4mA) — characteristicinthattheinputcommon-mode voltageIndependentofSupply Voltage range includesground,even thoughoperatedfrom a• Low InputBiasingCurrent:25 nA typ singlepower supplyvoltage.
- Low InputOffsetCurrent:±5 nA typ Applicationareas includelimitcomparators,simple• InputCommon-Mode VoltageRange Includes analogto digitalconverters;pulse,squarewave andGround timedelaygenerators;wide range VCO; MOS clock
- DifferentialInputVoltageRange Equal tothe timers;multivibratorsand high voltagedigitallogic gates.The LM193 serieswas designed to directlyPower Supply Voltage interfacewithTTL and CMOS. When operatedfrom• Low Output SaturationVoltage,:250 mV at4 both plus and minus power supplies,the LM193mA typ serieswilldirectlyinterfacewithMOS logicwhere
- Output VoltageCompatible withTTL, DTL, theirlow power drainis a distinctadvantage over ECL, MOS and CMOS Logic Systems standardcomparators. ADVANTAGES
- High PrecisionComparators
- Reduced VOS DriftOver Temperature
- EliminatesNeed forDual Supplies
- Allows Sensing Near Ground
- Compatible withAllForms ofLogic
- Power DrainSuitableforBatteryOperation Pleasebe aware thatan importantnoticeconcerningavailability,standardwarranty,and use incriticalapplicationsof Texas Instrumentssemiconductorproductsand disclaimerstheretoappearsattheend ofthisdatasheet. 2Alltrademarksarethepropertyoftheirrespectiveowners. PRODUCTION DATA informationiscurrentas ofpublicationdate. Copyright© 2005–2013,Texas InstrumentsIncorporatedProductsconform to specificationsper the terms of the Texas Instrumentsstandardwarranty.Productionprocessingdoes not necessarilyincludetestingofallparameters.
LM193A,LM193QML SNOSAM2C –MAY 2005–REVISED MARCH 2013 www.ti.com Schematic and Connection Diagrams Figure1. TO-99 Package See Package Number LMC Figure2. CDIP Package See Package Number NAB0008A
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LM193A,LM193QML www.ti.com SNOSAM2C –MAY 2005–REVISED MARCH 2013 These deviceshave limitedbuilt-inESD protection.The leadsshouldbe shortedtogetherorthedeviceplacedinconductivefoam duringstorageorhandlingtopreventelectrostaticdamage totheMOS gates. AbsoluteMaximum Ratings(1) SupplyVoltage,V+ 36VDC or±18VDC DifferentialInputVoltage(2) 36V InputVoltage −0.3VDC to+36VDC InputCurrent(VIN< −0.3VDC )(3) 50 mA Maximum JunctionTemperature 150°C Power Dissipation(4)(5) TO-99 660 mW CDIP 780 mW OutputShort-CircuittoGround(6) Continuous OperatingTemperatureRange −55°C ≤ TA ≤ +125°C StorageTemperatureRange −65°C ≤ TA ≤ +150°C ThermalResistance θJA TO-99 (StillAir) 174°C/W TO-99 (500LF/MinAirflow) 99°C/W CDIP (StillAir) 146°C/W CDIP (500LF/MinAirflow) 85°C/W θJC TO-99 44°C/W CDIP 33°C/W Lead Temperature(Soldering,10 seconds) 260°C ESD Tolerance(7) 500V (1) AbsoluteMaximum Ratingsindicatelimitsbeyond whichdamage tothedevicemay occur.OperatingRatingsindicateconditionsfor whichthedeviceisfunctional,butdo notensurespecificperformancelimits.Forensuredspecificationsand testconditions,see the ElectricalCharacteristics.The ensuredspecificationsapplyonlyforthetestconditionslisted.Some performancecharacteristicsmay degradewhen thedeviceisnotoperatedunderthelistedtestconditions. (2) Positiveexcursionsofinputvoltagemay exceed thepower supplylevel.As longas theothervoltageremainswithinthecommon-mode range,thecomparatorwillprovidea properoutputstate.The lowinputvoltagestatemust notbe lessthan−0.3V(or0.3Vbelowthe magnitudeofthenegativepower supply,ifused). (3) Thisinputcurrentwillonlyexistwhen thevoltageatany oftheinputleadsisdrivennegative.Itisdue tothecollector-basejunctionof theinputPNP transistorsbecoming forwardbiasedand therebyactingas inputdiodeclamps.Inadditiontothisdiodeaction,thereis alsolateralNPN parasitictransistoractionon theIC chip.Thistransistoractioncan cause theoutputvoltagesofthecomparatorstogo totheV+ voltagelevel(ortogroundfora largeoverdrive)forthetimedurationthatan inputisdrivennegative.Thisisnotdestructive and normaloutputstateswillre-establishwhen theinputvoltage,whichwas negative,againreturnstoa valuegreaterthan−0.3VDC . (4) The maximum power dissipationmust be deratedatelevatedtemperaturesand isdictatedby TJmax (maximum junctiontemperature), θJA (packagejunctiontoambientthermalresistance),and TA (ambienttemperature).The maximum allowablepower dissipationatany temperatureisPDmax = (TJmax -TA)/θJA orthenumber givenintheAbsoluteMaximum Ratings,whicheverislower. (5) The LM193A must be deratedbased on a 150°C, TJmax .The lowbiasdissipationand theON-OFF characteristicoftheoutputskeep the chipdissipationverysmall(PD ≤ 100mV), providedtheoutputtransistorsareallowedtosaturate. (6) ShortcircuitsfromtheoutputtoV+ can cause excessiveheatingand eventualdestruction.When consideringshortcircuitstoground, themaximum outputcurrentisapproximately20 mA independentofthemagnitudeofV+. (7) Human body model,1.5KΩ inserieswith100pF. QualityConformance Inspection Mil-Std-883,Method 5005 -Group A Subgroup Description Temp °C
1 Statictestsat 25
2 Statictestsat 125
3 Statictestsat -55
4 Dynamic testsat 25
5 Dynamic testsat 125
6 Dynamic testsat -55
7 Functionaltestsat 25
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LM193A,LM193QML SNOSAM2C –MAY 2005–REVISED MARCH 2013 www.ti.com QualityConformance Inspection(continued) Mil-Std-883,Method 5005 -Group A Subgroup Description Temp °C
9 Switchingtestsat 25
10 Switchingtestsat 125
11 Switchingtestsat -55
12 Settlingtimeat 25
13 Settlingtimeat 125
14 Settlingtimeat -55
LM193 ElectricalCharacteristicsDC Parameters The followingconditionsapply,unlessotherwisespecified.+V = 5V,VCM = 0V Symbol Parameter Conditions Sub-Notes Min Max Unit groups ICC SupplyCurrent 1.0 mA 1,2,3 +V = 36V 2.5 mA 1,2,3 ICEX OutputLeakage Current +V = 30V,+VI= 1V, -0.65 0.65 µA 1 VO = 30V,-VI= 0V -1.0 1.0 µA 2,3 ISink OutputSinkCurrent VO = 1.5V,-VI= 1V, 6.0 mA 1+VI= 0V VSat OutputSaturationVoltage ISink= 4mA, -VI= 1V, 0.4 V 1 +VI= 0V 0.7 V 2,3 VIO InputOffsetVoltage -5.0 5.0 mV 1 -9.0 9.0 mV 2,3 +V = 30V -5.0 5.0 mV 1 -9.0 9.0 mV 2,3 +V = 30V,VCM = 28.5V -5.0 5.0 mV 1 +V = 30V,VCM = 28.0V -9.0 9.0 mV 2,3 ±IIB InputBiasCurrent -100 -1.0 nA 1 -300 -1.0 nA 2,3 IIO InputoffsetCurrent R S = 50Ω -25 25 nA 1 -100 100 nA 2,3 VCM Common Mode Voltage +V = 30V See (1) 28.5 V 1 See (1) 28 V 2,3 PSRR Power SupplyRejectionRatio +V = 5V to30V, 60 dB 1R S = 50Ω CMRR Common Mode RejectionRatio +V = 30V,R S = 50Ω 60 dB 1VCM = 0V to28.5V, VDiff DifferentialInputVoltage +V = 30V,+VI= 36V, See (2) 500 nA 1,2,3-VI= 0V +V = 30V,+VI= 0V, See (2) 500 nA 1,2,3-VI= +36V AVS VoltageGain +V = 15V,R PullUp= 15KΩ See (3) 50 V/mV 41V ≤ VO ≤ 11V, (1) Parameterspecifiedby theVIO tests. (2) The valueforVDiffisnotdataloggedduringRead and Record. (3) DatalogreadinginK = V/mV.
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LM193A,LM193QML www.ti.com SNOSAM2C –MAY 2005–REVISED MARCH 2013 LM193 ElectricalCharacteristicsAC Parameters The followingconditionsapply,unlessotherwisespecified.+V = 5V Symbol Parameter Conditions Sub-Notes Min Max Unit groups tRLH Response Time VOD = 5mV 5.0 µS 9 VOD = 50mV 0.8 µS 9 tRHL Response Time VOD = 5mV 2.5 µS 9 VOD = 50mV 0.8 µS 9 LM193A ElectricalCharacteristicsDC Parameters The followingconditionsapply,unlessotherwisespecified.+V = 5V,VCM = 0V Symbol Parameter Conditions Sub-Notes Min Max Unit groups ICC SupplyCurrent R L = Infinity 1.0 mA 1,2,3 +V = 36V,R L = Infinity 2.5 mA 1,2,3 ICEX OutputLeakage Current +V = 30V,+VI= 1V, -0.65 0.65 µA 1 ISink OutputSinkCurrent VO = 1.5V,-VI= 1V, 6.0 mA 1 +VI= 0V 4.0 mA 2,3 VSat OutputSaturationVoltage ISink= 4mA, 0.4 V 1 -VI= 1V,+VI= 0V 0.7 V 2,3 VIO InputOffsetVoltage -2.0 2.0 mV 1 -4.0 4.0 mV 2,3 +V = 30V -2.0 2.0 mV 1 -4.0 4.0 mV 2,3 +V = 30V,VCM = 28.5V -2.0 2.0 mV 1 +V = 30V,VCM = 28.0V -4.0 4.0 mV 2,3 ±IIB InputBiasCurrent VO = 1.5V -100 -1.0 nA 1 -300 -1.0 nA 2,3 IIO InputoffsetCurrent R S = 50Ω,VO = 1.5V -25 25 nA 1 -100 100 nA 2,3 VCM Common Mode Voltage +V = 30V See (1) 28.5 V 1 See (1) 28 V 2,3 PSRR Power SupplyRejectionRatio +V = 5V to30V, 60 dB 1R S = 50Ω CMRR Common Mode RejectionRatio +V = 30V,R S = 50Ω 60 dB 1VCM = 0V to28.5V, VDiff DifferentialInputVoltage +V = 30V,+VI= 36V,-VI= 0V See (2) 500 nA 1,2,3 +V = 30V,+VI= 0V,-VI= +36V See (2) 500 nA 1,2,3 AVS VoltageGain +V = 15V,R PullUp= 15KΩ See (3) 50 V/mV 4 1V ≤ VO ≤ 11V, See (3) 25 V/mV 5,6 (1) Parameterspecifiedby theVIO tests. (2) The valueforVDiffisnotdataloggedduringRead and Record. (3) DatalogreadinginK = V/mV. Copyright© 2005–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 5 ProductFolderLinks:LM193A LM193QML
LM193A,LM193QML SNOSAM2C –MAY 2005–REVISED MARCH 2013 www.ti.com LM193A ElectricalCharacteristicsAC Parameters The followingconditionsapply,unlessotherwisespecified.+V = 5V,VCM = 0V Symbol Parameter Conditions Sub-Notes Min Max Unit groups tRLH Response Time VOD = 5mV 5.0 µS 9 VOD = 50mV 0.8 µS 9 tRHL Response Time VOD = 5mV 2.5 µS 9 VOD = 50mV 0.8 µS 9 LM193A ElectricalCharacteristicsDC DriftParameters The followingconditionsapply,unlessotherwisespecified.+V = 5V,VCM = 0V Deltacalculationsperformedon QMLV devicesatGroup B,Subgroup 5 only Symbol Parameter Conditions Sub-Notes Min Max Unit groups VIO InputOffsetVoltage +V = 30V -1.0 1.0 mV 1 ±IIB InputBiasCurrent -15 15 nA 1 LM193A -100K RadiationElectricalCharacteristicsDC Parameters(1)(2) The followingconditionsapply,unlessotherwisespecified.+V = 5V,VCM = 0V Symbol Parameter Conditions Sub-Notes Min Max Unit groups ICC SupplyCurrent R L = Infinity 1.0 mA 1,2,3 +V = 36V,R L = Infinity 2.5 mA 1,2,3 ICEX OutputLeakage Current +V = 30V,+VI= 1V, -0.65 0.65 µA 1 ISink OutputSinkCurrent VO = 1.5V,-VI= 1V, 6.0 mA 1 +VI= 0V 4.0 mA 2,3 VSat OutputSaturationVoltage ISink= 4mA, 0.4 V 1 -VI= 1V,+VI= 0V 0.7 V 2,3 VIO InputOffsetVoltage -2.0 2.0 mV 1 -4.0 4.0 mV 2,3 +V = 30V -2.0 2.0 mV 1 -4.0 4.0 mV 2,3 +V = 30V,VCM = 28.5V -2.0 2.0 mV 1 +V = 30V,VCM = 28.0V -4.0 4.0 mV 2,3 ±IIB InputBiasCurrent VO = 1.5V -100 -1.0 nA 1 -300 -1.0 nA 2,3 IIO InputoffsetCurrent R S = 50Ω,VO = 1.5V -25 25 nA 1 -100 100 nA 2,3 VCM Common Mode Voltage +V = 30V See (3) 28.5 V 1 See (3) 28 V 2,3 PSRR Power SupplyRejectionRatio +V = 5V to30V, 60 dB 1R S = 50Ω CMRR Common Mode RejectionRatio +V = 30V,R S = 50Ω 60 dB 1VCM = 0V to28.5V, (1) Pre and postirradiationlimitsareidenticaltothoselistedunderAC and DC electricalcharacteristicsexceptas listedinthePost RadiationLimitsTable.These partsmay be dose ratesensitiveina space environmentand demonstrateenhanced lowdose rateeffect. Radiationend pointlimitsforthenotedparametersarespecifiedonlyfortheconditionsas specifiedinMIL-STD-883,Method 1019 (2) Low dose ratetestinghas been performedon a wafer-by-waferbasis,pertestmethod 1019 conditionD ofMIL-STD-883,withno enhanced lowdose ratesensitivity(ELDRS) effect. (3) Parameterspecifiedby theVIO tests.
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LM193A,LM193QML www.ti.com SNOSAM2C –MAY 2005–REVISED MARCH 2013 LM193A -100K RadiationElectricalCharacteristicsDC Parameters(1)(2)(continued) The followingconditionsapply,unlessotherwisespecified.+V = 5V,VCM = 0V Symbol Parameter Conditions Sub-Notes Min Max Unit groups VDiff DifferentialInputVoltage +V = 30V,+VI= 36V,-VI= 0V See (4) 500 nA 1,2,3 +V = 30V,+VI= 0V,-VI= +36V See (4) 500 nA 1,2,3 AVS VoltageGain +V = 15V,R PullUp= 15KΩ See (3) 50 V/mV 4 1V ≤ VO ≤ 11V, See (5) 25 V/mV 5,6 (4) The valueforVDiffisnotdataloggedduringRead and Record. (5) DatalogreadinginK = V/mV. LM193A -100K RadiationElectricalCharacteristicsAC Parameters(1)(2) The followingconditionsapply,unlessotherwisespecified.+V = 5V,VCM = 0V Symbol Parameter Conditions Sub-Notes Min Max Unit groups tRLH Response Time VOD = 5mV 5.0 µS 9 VOD = 50mV 0.8 µS 9 tRHL Response Time VOD = 5mV 2.5 µS 9 VOD = 50mV 0.8 µS 9 (1) Pre and postirradiationlimitsareidenticaltothoselistedunderAC and DC electricalcharacteristicsexceptas listedinthePost RadiationLimitsTable.These partsmay be dose ratesensitiveina space environmentand demonstrateenhanced lowdose rateeffect. Radiationend pointlimitsforthenotedparametersarespecifiedonlyfortheconditionsas specifiedinMIL-STD-883,Method 1019 (2) Low dose ratetestinghas been performedon a wafer-by-waferbasis,pertestmethod 1019 conditionD ofMIL-STD-883,withno enhanced lowdose ratesensitivity(ELDRS) effect. LM193A -100K RadiationElectricalCharacteristics(Continued)DC DriftParameters(1)(2) The followingconditionsapply,unlessotherwisespecified.+V = 5V,VCM = 0V Deltacalculationsperformedon QMLV devicesatGroup B,Subgroup 5 only Symbol Parameter Conditions Sub-Notes Min Max Unit groups VIO InputOffsetVoltage +V = 30V -1.0 1.0 mV 1 ±IIB InputBiasCurrent -15 15 nA 1 (1) Low dose ratetestinghas been performedon a wafer-by-waferbasis,pertestmethod 1019 conditionD ofMIL-STD-883,withno enhanced lowdose ratesensitivity(ELDRS) effect. (2) Pre and postirradiationlimitsareidenticaltothoselistedunderAC and DC electricalcharacteristicsexceptas listedinthePost RadiationLimitsTable.These partsmay be dose ratesensitiveina space environmentand demonstrateenhanced lowdose rateeffect. Radiationend pointlimitsforthenotedparametersarespecifiedonlyfortheconditionsas specifiedinMIL-STD-883,Method 1019 LM193A -100K RadiationElectricalCharacteristics(Continued)AC Parameters -Post Radiation Limits@ +25°C (1)(2) The followingconditionsapply,unlessotherwisespecified.+V = 5V,VCM = 0V Symbol Parameter Conditions Sub-Notes Min Max Unit groups tRLH Response Time VOD = 50mV 1.0 µS 9 (1) Pre and postirradiationlimitsareidenticaltothoselistedunderAC and DC electricalcharacteristicsexceptas listedinthePost RadiationLimitsTable.These partsmay be dose ratesensitiveina space environmentand demonstrateenhanced lowdose rateeffect. Radiationend pointlimitsforthenotedparametersarespecifiedonlyfortheconditionsas specifiedinMIL-STD-883,Method 1019 (2) Low dose ratetestinghas been performedon a wafer-by-waferbasis,pertestmethod 1019 conditionD ofMIL-STD-883,withno enhanced lowdose ratesensitivity(ELDRS) effect. Copyright© 2005–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 7 ProductFolderLinks:LM193A LM193QML
LM193A,LM193QML SNOSAM2C –MAY 2005–REVISED MARCH 2013 www.ti.com TypicalPerformance Characteristics Supply Current InputCurrent Figure3. Figure4. Response Time forVariousInputOverdrives— Negative Output SaturationVoltage Transition Figure5. Figure6. Response Time forVariousInputOverdrives— PositiveTransition Figure7.
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LM193A,LM193QML www.ti.com SNOSAM2C –MAY 2005–REVISED MARCH 2013 APPLICATION HINTS The LM193 seriesarehighgain,wide bandwidthdeviceswhich,likemost comparators,can easilyoscillateifthe outputleadisinadvertentlyallowedtocapacitivelycoupletotheinputsviastraycapacitance.Thisshows up only duringthe outputvoltagetransitionintervalsas the comparatorchange states.Power supplybypassingisnot requiredto solvethisproblem.StandardPC board layoutishelpfulas itreducesstrayinput-outputcoupling. Reducing the inputresistorsto < 10 KΩ reducesthe feedbacksignallevelsand finally,addingeven a small amount (1.0to10 mV) ofpositivefeedback(hysteresis)causes such a rapidtransitionthatoscillationsdue to strayfeedbackare not possible.Simplysocketingthe IC and attachingresistorsto the pinswillcause input- outputoscillationsduringthe smalltransitionintervalsunlesshysteresisisused.Ifthe inputsignalisa pulse waveform,withrelativelyfastriseand falltimes,hysteresisisnotrequired. Allinputpinsofany unused comparatorsshouldbe tiedtothenegativesupply. The biasnetworkoftheLM193 seriesestablishesa draincurrentwhichisindependentofthemagnitudeofthe power supplyvoltageovertherangeoffrom2.0VDC to30 VDC . Itisusuallyunnecessarytouse a bypasscapacitoracrossthepower supplyline. The differentialinputvoltagemay be largerthanV+ withoutdamaging thedevice(seefollowingnote). NOTE Positiveexcursionsofinputvoltagemay exceed thepower supplylevel.As longas the othervoltageremains withinthe common-mode range,the comparatorwillprovidea properoutputstate.The low inputvoltagestatemust not be lessthan −0.3V (or0.3V belowthemagnitudeofthenegativepower supply,ifused). Protectionshouldbe providedtopreventtheinputvoltagesfrom goingnegativemore than−0.3VDC (at25°C). An inputclamp diodecan be used as shown intheapplicationssection. The outputoftheLM193 seriesistheuncommittedcollectorofa grounded-emitterNPN outputtransistor.Many collectorscan be tiedtogethertoprovidean outputOR'ingfunction.An outputpull-upresistorcan be connected toany availablepower supplyvoltagewithinthepermittedsupplyvoltagerangeand thereisno restrictionon this voltagedue to the magnitudeof the voltagewhich isappliedto the V+ terminalof the LM193 package.The outputcan alsobe used as a simpleSPST switchtoground(when a pull-upresistorisnotused).The amount of currentwhichtheoutputdevicecan sinkislimitedby thedriveavailable(whichisindependentofV+)and theβ ofthisdevice.When themaximum currentlimitisreached(approximately16mA), theoutputtransistorwillcome out of saturationand the outputvoltagewillriseveryrapidly.The outputsaturationvoltageislimitedby the approximately60Ω rSAT oftheoutputtransistor.The low offsetvoltageoftheoutputtransistor(1.0mV)allowsthe outputtoclamp essentiallytogroundlevelforsmallloadcurrents. Copyright© 2005–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 9 ProductFolderLinks:LM193A LM193QML
LM193A,LM193QML SNOSAM2C –MAY 2005–REVISED MARCH 2013 www.ti.com TypicalApplications (V+=5.0VDC ) Basic Comparator DrivingCMOS DrivingTTL Squarewave Oscillator Pulse Generator CrystalControlledOscillator *ForlargeratiosofR1/R2, D1 can be omitted. Figure8. Two-Decade High Frequency VCO V* = +30 VDC +250 mV DC ≤ VC ≤ +50 VDC 700Hz ≤ fo ≤ 100kHz
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LM193A,LM193QML www.ti.com SNOSAM2C –MAY 2005–REVISED MARCH 2013 Basic Comparator Non-InvertingComparator withHysteresis InvertingComparator withHysteresis Output Strobing AND Gate OR Gate Copyright© 2005–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 11 ProductFolderLinks:LM193A LM193QML
LM193A,LM193QML SNOSAM2C –MAY 2005–REVISED MARCH 2013 www.ti.com Large Fan-inAND Gate LimitComparator Comparing InputVoltagesofOpposite Polarity ORing theOutputs Zero Crossing Detector(SinglePower Supply) One-Shot Multivibrator
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LM193A,LM193QML www.ti.com SNOSAM2C –MAY 2005–REVISED MARCH 2013 Bi-StableMultivibrator One-Shot MultivibratorwithInputLock Out Zero Crossing Detector Comparator With a NegativeReference Figure9. Time Delay Generator Copyright© 2005–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 13 ProductFolderLinks:LM193A LM193QML
LM193A,LM193QML SNOSAM2C –MAY 2005–REVISED MARCH 2013 www.ti.com Split-SupplyApplications (V+=+15 VDC and V−=−15 VDC ) Figure10. MOS Clock Driver
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LM193A,LM193QML www.ti.com SNOSAM2C –MAY 2005–REVISED MARCH 2013 Table1.RevisionHistory Date Released Revision Section Originator Changes 05/09/05 A New Release.Corporateformat L.Lytle 2 MDS datasheetsconvertedintoone Corp. datasheetformat.MNLM193A-X Rev 1B3 & MNLM193 –X Rev 0E1.The IoutVsatcondition forLM193 was changed toIsinkforconsistency withtheLM193A and JAN electricalconditions. Also,redundantparameterswere removed fromconditionsthatwere definedatbeginning ofthetable.MDS datasheetswillbe archived. 05/07/07 B Features,OrderingInformation,LM193A LarryMcGee Added RadiationElectricalinformationfor 10/29/07 C Features,OrderingInformation,Notes LarryMcGee Added referencetoNew ELDS NSID and SMD Device03,ELDRS Note 12.RevisionB willbe archived. 03/20/13 C All Changed layoutofNationalData SheettoTI format Copyright© 2005–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 15 ProductFolderLinks:LM193A LM193QML
www.ti.com 11-Apr-2013 Addendum-Page 1 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Drawing Pins Package Qty Eco Plan (2) Lead/Ball Finish MSL Peak Temp (3) Op Temp (°C) Top-Side Markings (4) Samples 5962-9452602MGA ACTIVE TO-99 LMC 8 20 TBD Call TI Call TI -55 to 125 LM193AH/883 5962-9452602MGA Q ACO 5962-9452602MGA Q 5962-9452602MPA ACTIVE CDIP NAB 8 40 TBD Call TI Call TI -55 to 125 LM193AJ/883 5962-94526 02MPA Q ACO 02MPA Q >T 5962-9452602VPA ACTIVE CDIP NAB 8 40 TBD Call TI Call TI -55 to 125 LM193AJ-QMLV 5962-94526 02VPA Q ACO 02VPA Q >T 5962R9452602VGA ACTIVE TO-99 LMC 8 20 TBD Call TI Call TI -55 to 125 LM193AHRQMLV 5962R9452602VGA Q ACO 5962R9452602VGA Q 5962R9452602VPA ACTIVE CDIP NAB 8 40 TBD Call TI Call TI -55 to 125 LM193AJRQMLV 5962R94526 02VPA Q ACO 02VPA Q >T 5962R9452603VGA ACTIVE TO-99 LMC 8 20 TBD Call TI Call TI -55 to 125 LM193AHRLQMLV 5962R9452603VGA Q ACO 5962R9452603VGA Q 5962R9452603VPA ACTIVE CDIP NAB 8 40 TBD Call TI Call TI -55 to 125 LM193AJRLV 5962R94526 03VPA Q ACO 03VPA Q >T LM193AH/883 ACTIVE TO-99 LMC 8 20 TBD Call TI Call TI -55 to 125 LM193AH/883 5962-9452602MGA Q ACO 5962-9452602MGA Q LM193AHRLQMLV ACTIVE TO-99 LMC 8 20 TBD Call TI Call TI -55 to 125 LM193AHRLQMLV
www.ti.com 11-Apr-2013 Addendum-Page 2 Orderable Device Status (1) Package Type Package Drawing Pins Package Qty Eco Plan (2) Lead/Ball Finish MSL Peak Temp (3) Op Temp (°C) Top-Side Markings (4) Samples 5962R9452603VGA Q ACO 5962R9452603VGA Q LM193AHRQMLV ACTIVE TO-99 LMC 8 20 TBD Call TI Call TI -55 to 125 LM193AHRQMLV 5962R9452602VGA Q ACO 5962R9452602VGA Q LM193AJ-QMLV ACTIVE CDIP NAB 8 40 TBD Call TI Call TI -55 to 125 LM193AJ-QMLV 5962-94526 02VPA Q ACO 02VPA Q >T LM193AJ/883 ACTIVE CDIP NAB 8 40 TBD Call TI Call TI -55 to 125 LM193AJ/883 5962-94526 02MPA Q ACO 02MPA Q >T LM193AJRLQMLV ACTIVE CDIP NAB 8 40 TBD Call TI Call TI -55 to 125 LM193AJRLV 5962R94526 03VPA Q ACO 03VPA Q >T LM193AJRQMLV ACTIVE CDIP NAB 8 40 TBD Call TI Call TI -55 to 125 LM193AJRQMLV 5962R94526 02VPA Q ACO 02VPA Q >T LM193H/883 ACTIVE TO-99 LMC 8 20 TBD Call TI Call TI -55 to 125 LM193H/883 Q ACO LM193H/883 Q >T LM193J/883 ACTIVE CDIP NAB 8 40 TBD Call TI Call TI -55 to 125 LM193J /883 Q ACO /883 Q >T (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device.
www.ti.com 11-Apr-2013 Addendum-Page 3 (2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability information and additional product content details. TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above. Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material) (3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. (4) Multiple Top-Side Markings will be inside parentheses. Only one Top-Side Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation of the previous line and the two combined represent the entire Top-Side Marking for that device. Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release. In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis. OTHER QUALIFIED VERSIONS OF LM193QML, LM193QML-SP :
- Military: LM193QML
- Space: LM193QML-SP NOTE: Qualified Version Definitions:
- Military - QML certified for Military and Defense Applications
- Space - Radiation tolerant, ceramic packaging and qualified for use in Space-based application
www.ti.com J08A (Rev M)
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Click to View Pricing, Inventory, Delivery & Lifecycle Information: Texas Instruments: LM193AHRLQMLV LM193AHRQMLV LM193AJ-QMLV LM193AJRLQMLV LM193AJRQMLV 5962R9452602VPA 5962-9452602MPA 5962-9452602VPA 5962-9452602MGA