LM185H-1.2-QV

LM185-1.2QML TI1 | Alldatasheet

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Technical content

LM185-1.2QML LM185-1.2QML Micropower Voltage Reference Diode Literature Number: SNVS384

LM185-1.2QML Micropower Voltage Reference Diode General Description The LM185-1.2 is a micropower 2-terminal band-gap voltage regulator diodes. Operating over a 10µA to 20mA current range, it features exceptionally low dynamic impedance and good temperature stability. On-chip trimming is used to pro- vide tight voltage tolerance. Since the LM185-1.2 band-gap reference uses only transistors and resistors, low noise and good long term stability result. Careful design of the LM185-1.2 has made the device ex- ceptionally tolerant of capacitive loading, making it easy to use in almost any reference application. The wide dynamic operating range allows its use with widely varying supplies with excellent regulation. The extremely low power drain of the LM185-1.2 makes it useful for micropower circuitry. This voltage reference can be used to make portable meters, regulators or general purpose analog circuitry with battery life approaching shelf life. Further, the wide operating current allows it to replace older references with a tighter tolerance part.

Features

n Operating current of 10µA to 20mA n 1Ω maximum dynamic impedance (typical) n Low temperature coefficient n Low voltage reference - 1.235V

Ordering Information

NS Part Number JAN Part Number NS Package Number Package Description LM185E-1.2/883 5962–87594012A E20A 20LD LCC LM185H-1.2-SMD 5962–8759401XA H02A 2 LD T0–46 LM185H-1.2-QV 5962–8759401VXA H02A 2 LD T0–46 LM185WG-1.2/883 5962–8759401YA WG10A 10LD Ceramic SOIC LM185BYH-1.2-SMD 5962–8759405XA H02A 2 LD T0–46 LM185WG-1.2-QV 5962–8759401VYA WG10A 10LD Ceramic SOIC Connection Diagrams Hermetic Leadless Chip Carrier (E) TO-46 Metal Can Package (H) 20156135 See NS Package Number E20A 20156106 Bottom View See NS Package Number H02A October 2005 LM185-1.2QML Micropower Voltage Reference Diode © 2005 National Semiconductor Corporation DS201561 www.national.com

Connection Diagrams (Continued) Ceramic SOIC (WG) 20156134 See NS Package Number WG10A Schematic Diagram 20156107 LM185-1.2QML www.national.com 2

Absolute Maximum Ratings (Note 1) Reverse Current 30mA Forward Current 10mA Operating Temperature Range −55˚C ≤ TA ≤ +125˚C Maximum Junction Temperature (TJmax) (Note 2) +150˚C Storage Temperature −55˚C ≤ TA ≤ +150˚C Lead Temperature (Soldering 10 Seconds) Ceramic SOIC 260˚C TO-46 package 300˚C 20LD LCC package 300˚C Thermal Resistance θJA Metal Can (Still Air) 300˚C/W Metal Can (500LF / Min Air Flow) 139˚C/W 20LD LCC (Still Air) 100˚C/W 20LD LCC (500LF / Min Air Flow) 73˚C/W Ceramic SOIC (Still Air) 194˚C/W Ceramic SOIC (500LF / Min Air Flow) 128˚C/W θ JC Metal Can 57˚C/W 20LD LCC 25˚C/W Ceramic SOIC 23˚C/W Package Weight (Typical) Metal Can TBD 20LD LCC TBD Ceramic SOIC 210mg ESD Tolerance (Note 3) 4KV Quality Conformance Inspection Mil-Std-883, Method 5005 - Group A Subgroup Description Temp ˚C

1 Static tests at 25

2 Static tests at 125

3 Static tests at -55

4 Dynamic tests at 25

5 Dynamic tests at 125

6 Dynamic tests at -55

7 Functional tests at 25

8A Functional tests at 125 8B Functional tests at -55

9 Switching tests at 25

10 Switching tests at 125

11 Switching tests at -55

12 Settling time at 25

13 Settling time at 125

14 Settling time at -55

LM185-1.2QML www.national.com3

LM185–1.2 Electrical Characteristics DC Parameters Symbol Parameter Conditions Notes Min Max Units Sub- groups VRef Reverse Breakdown Voltage I R = 10µA 1.223 1.247 V 1 IR = 20µA 1.205 1.26 V 2, 3 IR = 1mA 1.223 1.247 V 1 1.205 1.26 V 2, 3 IR = 20mA 1.223 1.247 V 1 1.205 1.26 V 2, 3 ∆VRef / ∆IR Reverse Breakdown Voltage Change with Current 10µA ≤ IR ≤ 1mA -1.0 1.0 mV 1 20µA ≤ IR ≤ 1mA -1.5 1.5 mV 2, 3 1mA ≤ IR ≤ 20mA -10.0 10.0 mV 1 -20.0 20.0 mV 2, 3 VF Forward Bias Voltage I F = 2mA -1.0 -0.4 V 1 DC Drift Parameters Delta calculations performed on QMLV devices at grou p B , subgroup 5, unless otherwise specified on the IPI. Symbol Parameter Conditions Notes Min Max Units Sub- groups VR Reverse Breakdown Voltage I R = 10µA -0.01 0.01 V 1 IR = 20mA -0.01 0.01 V 1 LM185BY–1.2 Electrical Characteristics DC Parameters Symbol Parameter Conditions Notes Min Max Units Sub- groups VRef Reverse Breakdown Voltage I R = 10µA 1.223 1.247 V 1 IR = 20µA 1.205 1.26 V 2, 3 IR = 1mA 1.223 1.247 V 1 1.205 1.26 V 2, 3 IR = 20mA 1.223 1.247 V 1 1.205 1.26 V 2, 3 ∆VRef / ∆IR Reverse Breakdown Voltage Change with Current 10µA ≤ IR ≤ 1mA -1.0 1.0 mV 1 20µA ≤ IR ≤ 1mA -1.5 1.5 mV 2, 3 1mA ≤ IR ≤ 20mA -10.0 10.0 mV 1 -20.0 20.0 mV 2, 3 VF Forward Bias Voltage I F = 2mA -1.0 -0.4 V 1 TC Temperature Coefficient (Note 4) 50 PPM/˚C 2, 3 Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is functional, but do not guarantee specific performance limits. For guaranteed specifications and test conditions, see the Electrical Characterist ics. The guaranteed specifications apply only for the test conditions listed. Some performance characteristics may degrade when the device is not operated under the lis ted test conditions. Note 2: The maximum power dissipation must be derated at elevated temperatures and is dictated by TJmax (maximum junction temperature), θJA (package junction to ambient thermal resistance), and T A (ambient temperature). The maximum allowable power dissipation at any temperature is P Dmax =( TJmax -T A)/θJA or the number given in the Absolute Maximum Ratings, whichever is lower. Note 3: Human body model, 1.5K Ω in series with 100pF. Note 4: The average temperature coefficient is defined as the maximum deviation of reference voltage, at all measured temperatures between the operating T Min &T Max, divided by (T Max −T Min). The measured temperatures (T Measured) are −55˚C, 25˚C, & 125˚C or ∆VRef /( TMax −T Min) LM185-1.2QML www.national.com 4

Typical Performance Characteristics Reverse Characteristics Reverse Characteristics 20156113 20156114 Forward Characteristics Temperature Drift of 3 Representative Units 20156115 20156116 Reverse Dynamic Impedance Reverse Dynamic Impedance 20156117 20156118 LM185-1.2QML www.national.com5

Typical Performance Characteristics (Continued) Noise Voltage Filtered Output Noise 20156119 20156120 Response Time 20156121 Typical Applications Wide Input Range Reference 20156108 Micropower Reference from 9V Battery 20156122 Reference from 1.5V Battery 20156123 LM185-1.2QML www.national.com 6

Typical Applications (Continued) Micropower* 5V Regulator 20156124 *IQ . 30µA Micropower* 10V Reference 20156125 *IQ .20µA standby current Precision 1µA to 1mA Current Sources 20156126 20156127 LM185-1.2QML www.national.com7

Typical Applications (Continued) METER THERMOMETERS 0˚C−100˚C Thermometer 20156128 Calibration 1. Short LM385-1.2, adjust R3 for I OUT= temp at 1µA/˚K 2. Remove short, adjust R2 for correct reading in centigrade †IQ at 1.3V.500µA IQ at 1.6V.2.4mA Lower Power Thermometer 20156129 *2N3638 or 2N2907 select for inverse H FE . 5 †Select for operation at 1.3V ‡IQ . 600µA to 900µA 0˚F−50˚F Thermometer 20156130 Calibration 1. Short LM385-1.2, adjust R3 for I OUT= temp at 1.8µA/˚K 2. Remove short, adjust R2 for correct reading in ˚F Centigrade Thermometer 20156101 Calibration 1. Adjust R1 so that V1 = temp at 1mV/˚K 2. Adjust V2 to 273.2mV †IQ for 1.3V to 1.6V battery volt- age = 50µA to 150µA Micropower Thermocouple Cold Junction Compensator 20156131 Adjustment Procedure 1. Adjust TC ADJ pot until voltage across R1 equals Kelvin temperature multiplied by the thermocouple Seebeck coefficient. 2. Adjust zero ADJ pot until voltage across R2 equals the thermocouple Seebeck coefficient multiplied by 273.2. Thermocouple Seebeck R1 R2 Voltage Voltage Type Coefficient ( Ω)( Ω) Across Across (µV/˚C) @ 25˚C (mV) (mV) J 52.3 523 1.24k 15.60 14.32 T 42.8 432 1k 12.77 11.78 K 40.8 412 953Ω 12.17 11.17 S 6.4 63.4 150Ω 1.908 1.766 Typical supply current 50µA LM185-1.2QML www.national.com 8

Released Revision Section Originator Changes 10/07/05 A New Release, Corporate format L. Lytle 2 MDS data sheets converted into one Corp. data sheet format. MNLM185-1.2-X Rev 2A3 and MNLM185BY-1.2-X Rev 0B0 data sheets will be archived. LM185-1.2QML www.national.com9

Physical Dimensions inches (millimeters) unless otherwise noted TO-46 Metal Can Package (H) Leadless Chip Carrier Package (E) LM185-1.2QML www.national.com 10

Physical Dimensions inches (millimeters) unless otherwise noted (Continued) Ceramic SOIC Package (WG) National does not assume any responsibility for use of any circuitry described, no circuit patent licenses are implied and National reserves the right at any time without notice to change said circuitry and specifications. For the most current product information visit us at www.national.com. LIFE SUPPORT POLICY NATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT AND GENERAL COUNSEL OF NATIONAL SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. BANNED SUBSTANCE COMPLIANCE National Semiconductor manufactures products and uses packing materials that meet the provisions of the Customer Products Stewardship Specification (CSP-9-111C2) and the Banned Substances and Materials of Interest Specification (CSP-9-111S2) and contain no ‘‘Banned Substances’’ as defined in CSP-9-111S2. Leadfree products are RoHS compliant. National Semiconductor Americas Customer Support Center Email: new.feedback@nsc.com Tel: 1-800-272-9959 National Semiconductor Europe Customer Support Center Fax: +49 (0) 180-530 85 86 Email: europe.support@nsc.com Deutsch Tel: +49 (0) 69 9508 6208 English Tel: +44 (0) 870 24 0 2171 Français Tel: +33 (0) 1 41 91 8790 National Semiconductor Asia Pacific Customer Support Center Email: ap.support@nsc.com National Semiconductor Japan Customer Support Center Fax: 81-3-5639-7507 Email: jpn.feedback@nsc.com Tel: 81-3-5639-7560 www.national.com LM185-1.2QML Micropower Voltage Reference Diode

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