LM185H-1.2/NOPB

LM185-1.2-N_13 TI1 | Alldatasheet

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LM185-1.2-N,LM285-1.2-N,LM385-1.2-N www.ti.com SNVS742E –JANUARY 2000–REVISED APRIL 2013 LM185-1.2-N/LM285-1.2-N/LM385-1.2-NMicropowerVoltageReferenceDiode Check forSamples: LM185-1.2-N,LM285-1.2-N,LM385-1.2-N Carefuldesign of the LM185-1.2-N has made the1FEATURES device exceptionallytolerantof capacitiveloading, 2• ±1% and 2% InitialTolerance making it easy to use in almost any reference

• OperatingCurrentof10μA to20mA application.The wide dynamic operatingrangeallows itsuse with widelyvaryingsupplieswith excellent• 1Ω Dynamic Impedance regulation.• Low Temperature Coefficient The extremelylow power drainof the LM185-1.2-N• Low VoltageReference— 1.235V makes itusefulformicropowercircuitry.Thisvoltage• 2.5VDevice and AdjustableDevice Also referencecan be used to make portablemeters,Available regulatorsor generalpurpose analog circuitrywith
• LM185-2.5Seriesand LM185 Series, batterylifeapproachingshelflife. respectively Further,the wide operatingcurrentallows it to replaceolderreferenceswitha tightertolerancepart.DESCRIPTION transistorsand resistors,low noise and good long termstabilityresult. CONNECTION DIAGRAM Figure1. T0-92Package (LP) (Bottom View) Figure3. SOIC Package *Pin3 isattachedtotheDieAttachPad (DAP) and shouldbe connectedtoPin2 or leftfloating. Figure2. SOT-23 Figure4. TO Package (NDV) (Bottom View) Pleasebe aware thatan importantnoticeconcerningavailability,standardwarranty,and use incriticalapplicationsof Texas Instrumentssemiconductorproductsand disclaimerstheretoappearsattheend ofthisdatasheet. 2Alltrademarksarethepropertyoftheirrespectiveowners. PRODUCTION DATA informationiscurrentas ofpublicationdate. Copyright© 2000–2013,Texas InstrumentsIncorporatedProductsconform to specificationsper the terms of the Texas Instrumentsstandardwarranty.Productionprocessingdoes not necessarilyincludetestingofallparameters.

LM185-1.2-N,LM285-1.2-N,LM385-1.2-N SNVS742E –JANUARY 2000–REVISED APRIL 2013 www.ti.com These deviceshave limitedbuilt-inESD protection.The leadsshouldbe shortedtogetherorthedeviceplacedinconductivefoam duringstorageorhandlingtopreventelectrostaticdamage totheMOS gates. ABSOLUTE MAXIMUM RATINGS (1)(2)(3) ReverseCurrent 30mA ForwardCurrent 10mA OperatingTemperatureRange (4) LM185-1.2-N −55°C to+125°C LM285-1.2-N −40°C to+85°C LM385-1.2-N 0°C to70°C ESD Susceptibility(5) 2kV StorageTemperature −55°C to+150°C SolderingInformation TO-92 package:10 sec. 260°C TO package:10sec. 300°C SOIC and SOT-23 Pkg. Vapor phase (60sec.) 215°C Infrared(15sec.) 220°C See AN-450 “SurfaceMountingMethods and TheirEffecton ProductReliability”forothermethods ofsolderingsurfacemount devices. (1) AbsoluteMaximum Ratingsindicatelimitsbeyond whichdamage tothedevicemay occur.OperatingRatingsindicateconditionsfor whichthedeviceisintendedtobe functional.Forspecificationsand testconditions,see theElectricalCharacteristics.The specifications applyonlyforthetestconditionslisted. (2) RefertoRETS185H-1.2 formilitaryspecifications. (3) IfMilitary/Aerospacespecifieddevicesarerequired,pleasecontacttheTISalesOffice/Distributorsforavailabilityand specifications. (4) Forelevatedtemperatureoperation,see Table1. (5) The human body model isa 100 pF capacitordischargedthrougha 1.5kΩ resistorintoeach pin. Table1.TJ(max) forElevatedTemperature Operation DEVICE TJ(max) (°C) LM185-1.2-N 150 LM285-1.2-N 125 LM385-1.2-N 100

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LM185-1.2-N,LM285-1.2-N,LM385-1.2-N www.ti.com SNVS742E –JANUARY 2000–REVISED APRIL 2013 ELECTRICAL CHARACTERISTICS (1) LM185-1.2-N LM185BX-1.2-N LM385B-1.2-N LM185BY-1.2-N LM385BX-1.2-N LM385-1.2-N LM285-1.2-N LM385BY-1.2-N UnitsParameter Conditions Typ LM285BX-1.2-N (Limit) LM285BY-1.2-N Tested Design Tested Design Tested Design Limit(2) Limit (4) Limit (2) Limit (4) Limit (2) Limit (4) (3) ReverseBreakdown TA = 25°C, 1.23 1.223 1.223 1.205 V(Min) Voltage 10μA ≤ IR ≤ 20mA 1.247 1.247 1.260 V(Max) Minimum Operating 8 10 20 15 20 15 20 μA Current LM385M3-1.2-N 10 15 (Max) ReverseBreakdown 10μA ≤ IR ≤ 1mA 1 1.5 1 1.5 1 1.5 mV VoltageChange with (Max)Current 1mA ≤ IR ≤ 20mA 10 20 20 25 20 25 mV (Max) ReverseDynamic IR = 100μA,f= 20Hz 1 Ω Impedance Wideband Noise IR = 100μA, 60 μV (rms) 10Hz ≤ f≤ 10kHz Long Term Stability IR = 100μA,T = 1000 Hr, 20 ppm TA = 25°C ±0.1°C AverageTemperature IR = 100μA Coefficient(5) X Suffix 30 30 ppm/°C Y Suffix 50 50 ppm/°C AllOthers 150 150 150 ppm/°C (Max) (1) Parametersidentifiedwithboldfacetypeapplyattemperatureextremes.Allothernumbers applyatTA = TJ = 25°C. (2) Productiontested. (3) A militaryRETS electricalspecificationisavailableon request. (4) Specifiedby design.Not productiontested.These limitsarenotused tocalculateaverageoutgoingqualitylevels. (5) The averagetemperaturecoefficientisdefinedas themaximum deviationofreferencevoltageatallmeasured temperaturesbetween theoperatingTMAX and TMIN ,dividedby TMAX − TMIN .The measured temperaturesare−55°C, −40°C, 0°C, 25°C, 70°C, 85°C, 125°C. THERMAL CHARACTERISTICS Thermal Resistance TO-92 TO SOIC SOT-23 180°C/W (0.4″ leads)θJA (junctiontoambient) 440°C/W 165°C/W 283°C/W170°C/W (0.125″ leads) θJC (junctiontocase) N/A 80°C/W N/A N/A Copyright© 2000–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 3 ProductFolderLinks:LM185-1.2-N LM285-1.2-N LM385-1.2-N

LM185-1.2-N,LM285-1.2-N,LM385-1.2-N SNVS742E –JANUARY 2000–REVISED APRIL 2013 www.ti.com TYPICAL PERFORMANCE CHARACTERISTICS Reverse Characteristics Reverse Characteristics Figure5. Figure6. Temperature Driftof3 Forward Characteristics RepresentativeUnits Figure7. Figure8. Reverse Dynamic Impedance Reverse Dynamic Impedance Figure9. Figure10.

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LM185-1.2-N,LM285-1.2-N,LM385-1.2-N www.ti.com SNVS742E –JANUARY 2000–REVISED APRIL 2013 TYPICAL PERFORMANCE CHARACTERISTICS (continued) Noise Voltage FilteredOutput Noise Figure11. Figure12. Response Time Figure13. Copyright© 2000–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 5 ProductFolderLinks:LM185-1.2-N LM285-1.2-N LM385-1.2-N

LM185-1.2-N,LM285-1.2-N,LM385-1.2-N SNVS742E –JANUARY 2000–REVISED APRIL 2013 www.ti.com TYPICAL APPLICATIONS Figure14.Wide InputRange Reference Figure15.Micropower Referencefrom 9V Battery Figure16.Referencefrom 1.5VBattery *IQ ≃ 30μA Figure17. Micropower* 5V Regulator

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LM185-1.2-N,LM285-1.2-N,LM385-1.2-N www.ti.com SNVS742E –JANUARY 2000–REVISED APRIL 2013 *IQ ≃20μA standbycurrent Figure18. Micropower* 10V Reference Figure19. Figure20.Precision1μA to1mA CurrentSources Copyright© 2000–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 7 ProductFolderLinks:LM185-1.2-N LM285-1.2-N LM385-1.2-N

LM185-1.2-N,LM285-1.2-N,LM385-1.2-N SNVS742E –JANUARY 2000–REVISED APRIL 2013 www.ti.com METER THERMOMETERS Calibration 1.ShortLM385-1.2-N,adjustR3 forIOUT = temp at1μA/°K 2.Remove short,adjustR2 forcorrectreadingincentigrade †IQ at1.3V≃500μA IQ at1.6V≃2.4mA Figure21. 0°C −100°C Thermometer Figure22. *2N3638 or2N2907 selectforinverseH FE ≃ 5 †Selectforoperationat1.3V ‡IQ ≃ 600μA to900μA Figure23. Lower Power Thermometer

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LM185-1.2-N,LM285-1.2-N,LM385-1.2-N www.ti.com SNVS742E –JANUARY 2000–REVISED APRIL 2013 Calibration 1.ShortLM385-1.2-N,adjustR3 forIOUT = temp at1.8μA/°K 2.Remove short,adjustR2 forcorrectreadingin°F Figure24. 0°F−50°F Thermometer Adjustment Procedure 1.AdjustTC ADJ potuntilvoltageacrossR1 equalsKelvintemperaturemultipliedby thethermocoupleSeebeck coefficient. 2.AdjustzeroADJ potuntilvoltageacrossR2 equalsthethermocoupleSeebeck coefficientmultipliedby 273.2. Figure25. Micropower Thermocouple Cold JunctionCompensator Copyright© 2000–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 9 ProductFolderLinks:LM185-1.2-N LM285-1.2-N LM385-1.2-N

LM185-1.2-N,LM285-1.2-N,LM385-1.2-N SNVS742E –JANUARY 2000–REVISED APRIL 2013 www.ti.com Thermocouple Seebeck R1 R2 Voltage Voltage Type Coefficient (Ω) (Ω) Across R1 Across R2 (μV/°C) @ 25°C (mV) (mV) J 52.3 523 1.24k 15.60 14.32 T 42.8 432 1k 12.77 11.78 K 40.8 412 953Ω 12.17 11.17 S 6.4 63.4 150Ω 1.908 1.766 Typicalsupplycurrent50μA Calibration 1.AdjustR1 so thatV1 = temp at1mV/°K 2.AdjustV2 to273.2mV †IQ for1.3Vto1.6Vbatteryvolt- age = 50μA to150μA Figure26. CentigradeThermometer

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LM185-1.2-N,LM285-1.2-N,LM385-1.2-N www.ti.com SNVS742E –JANUARY 2000–REVISED APRIL 2013 SCHEMATIC DIAGRAM Copyright© 2000–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 11 ProductFolderLinks:LM185-1.2-N LM285-1.2-N LM385-1.2-N

LM185-1.2-N,LM285-1.2-N,LM385-1.2-N SNVS742E –JANUARY 2000–REVISED APRIL 2013 www.ti.com

REVISION HISTORY

Changes from RevisionD (April2013)toRevisionE Page

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www.ti.com 11-Apr-2013 Addendum-Page 1 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Drawing Pins Package Qty Eco Plan (2) Lead/Ball Finish MSL Peak Temp (3) Op Temp (°C) Top-Side Markings (4) Samples LM185BYH-1.2 ACTIVE TO NDU 2 1000 TBD Call TI Call TI -55 to 125 LM185BYH1.2 LM185BYH-1.2/NOPB ACTIVE TO NDU 2 1000 Green (RoHS & no Sb/Br) POST-PLATE Level-1-NA-UNLIM -55 to 125 LM185BYH1.2 LM185H-1.2 ACTIVE TO NDU 2 1000 TBD Call TI Call TI -55 to 125 LM185H1.2 LM185H-1.2/NOPB ACTIVE TO NDU 2 1000 Green (RoHS & no Sb/Br) POST-PLATE Level-1-NA-UNLIM -55 to 125 LM185H1.2 LM285BXM-1.2/NOPB ACTIVE SOIC D 8 95 Green (RoHS & no Sb/Br) CU SN Level-1-260C-UNLIM -40 to 85 285BX M1.2 LM285BXMX-1.2/NOPB ACTIVE SOIC D 8 2500 Green (RoHS & no Sb/Br) CU SN Level-1-260C-UNLIM -40 to 85 285BX M1.2 LM285BXZ-1.2/LFT4 ACTIVE TO-92 LP 3 2000 Green (RoHS & no Sb/Br) SNCU Level-1-NA-UNLIM 285BX Z-1.2 LM285BXZ-1.2/NOPB ACTIVE TO-92 LP 3 1800 Green (RoHS & no Sb/Br) SNCU Level-1-NA-UNLIM -40 to 85 285BX Z-1.2 LM285BYM-1.2/NOPB ACTIVE SOIC D 8 95 Green (RoHS & no Sb/Br) CU SN Level-1-260C-UNLIM -40 to 85 285BY M1.2 LM285BYMX-1.2/NOPB ACTIVE SOIC D 8 2500 Green (RoHS & no Sb/Br) CU SN Level-1-260C-UNLIM -40 to 85 285BY M1.2 LM285H-1.2 ACTIVE TO NDU 2 1000 TBD Call TI Call TI -40 to 85 LM285H1.2 LM285H-1.2/NOPB ACTIVE TO NDU 2 1000 Green (RoHS & no Sb/Br) POST-PLATE Level-1-NA-UNLIM -40 to 85 LM285H1.2 LM285M-1.2/NOPB ACTIVE SOIC D 8 95 Green (RoHS & no Sb/Br) CU SN Level-1-260C-UNLIM -40 to 85 LM285 M1.2 LM285MX-1.2/NOPB ACTIVE SOIC D 8 2500 Green (RoHS & no Sb/Br) CU SN Level-1-260C-UNLIM -40 to 85 LM285 M1.2 LM285Z-1.2/NOPB ACTIVE TO-92 LP 3 1800 Green (RoHS & no Sb/Br) SNCU Level-1-NA-UNLIM -40 to 85 LM28 5Z-1.2 LM385BM-1.2 ACTIVE SOIC D 8 95 TBD Call TI Call TI 0 to 70 LM385 BM1.2 LM385BM-1.2/NOPB ACTIVE SOIC D 8 95 Green (RoHS & no Sb/Br) CU SN Level-1-260C-UNLIM 0 to 70 LM385 BM1.2 LM385BMX-1.2 ACTIVE SOIC D 8 2500 TBD Call TI Call TI 0 to 70 LM385

www.ti.com 11-Apr-2013 Addendum-Page 2 Orderable Device Status (1) Package Type Package Drawing Pins Package Qty Eco Plan (2) Lead/Ball Finish MSL Peak Temp (3) Op Temp (°C) Top-Side Markings (4) Samples BM1.2 LM385BMX-1.2/NOPB ACTIVE SOIC D 8 2500 Green (RoHS & no Sb/Br) CU SN Level-1-260C-UNLIM 0 to 70 LM385 BM1.2 LM385BXM-1.2/NOPB ACTIVE SOIC D 8 95 Green (RoHS & no Sb/Br) CU SN Level-1-260C-UNLIM 0 to 70 385BX M1.2 LM385BXMX-1.2/NOPB ACTIVE SOIC D 8 2500 Green (RoHS & no Sb/Br) CU SN Level-1-260C-UNLIM 0 to 70 385BX M1.2 LM385BXZ-1.2/NOPB ACTIVE TO-92 LP 3 1800 Green (RoHS & no Sb/Br) SNCU Level-1-NA-UNLIM 0 to 70 385BX Z-1.2 LM385BYM-1.2/NOPB ACTIVE SOIC D 8 95 Green (RoHS & no Sb/Br) CU SN Level-1-260C-UNLIM 0 to 70 385BY M1.2 LM385BYMX-1.2 ACTIVE SOIC D 8 2500 TBD Call TI Call TI 0 to 70 385BY M1.2 LM385BYMX-1.2/NOPB ACTIVE SOIC D 8 2500 Green (RoHS & no Sb/Br) CU SN Level-1-260C-UNLIM 0 to 70 385BY M1.2 LM385BYZ-1.2/NOPB ACTIVE TO-92 LP 3 1800 Green (RoHS & no Sb/Br) SNCU Level-1-NA-UNLIM 0 to 70 385BY Z-1.2 LM385BZ-1.2/NOPB ACTIVE TO-92 LP 3 1800 Green (RoHS & no Sb/Br) SNCU Level-1-NA-UNLIM 0 to 70 LM385 BZ1.2 LM385M-1.2 ACTIVE SOIC D 8 95 TBD Call TI Call TI 0 to 70 LM385 M1.2 LM385M-1.2/NOPB ACTIVE SOIC D 8 95 Green (RoHS & no Sb/Br) CU SN Level-1-260C-UNLIM 0 to 70 LM385 M1.2 LM385M3-1.2 ACTIVE SOT-23 DBZ 3 1000 TBD Call TI Call TI 0 to 70 R11 LM385M3-1.2/NOPB ACTIVE SOT-23 DBZ 3 1000 Green (RoHS & no Sb/Br) CU SN Level-1-260C-UNLIM 0 to 70 R11 LM385M3X-1.2 ACTIVE SOT-23 DBZ 3 3000 TBD Call TI Call TI 0 to 70 R11 LM385M3X-1.2/NOPB ACTIVE SOT-23 DBZ 3 3000 Green (RoHS & no Sb/Br) CU SN Level-1-260C-UNLIM 0 to 70 R11 LM385MX-1.2 ACTIVE SOIC D 8 2500 TBD Call TI Call TI 0 to 70 LM385 M1.2 LM385MX-1.2/NOPB ACTIVE SOIC D 8 2500 Green (RoHS & no Sb/Br) CU SN Level-1-260C-UNLIM 0 to 70 LM385 M1.2 LM385Z-1.2/LFT3 ACTIVE TO-92 LP 3 2000 Green (RoHS & no Sb/Br) SNCU Level-1-NA-UNLIM LM385 Z-1.2

www.ti.com 11-Apr-2013 Addendum-Page 3 Orderable Device Status (1) Package Type Package Drawing Pins Package Qty Eco Plan (2) Lead/Ball Finish MSL Peak Temp (3) Op Temp (°C) Top-Side Markings (4) Samples LM385Z-1.2/LFT4 ACTIVE TO-92 LP 3 2000 Green (RoHS & no Sb/Br) SNCU Level-1-NA-UNLIM LM385 Z-1.2 LM385Z-1.2/NOPB ACTIVE TO-92 LP 3 1800 Green (RoHS & no Sb/Br) SNCU Level-1-NA-UNLIM 0 to 70 LM385 Z-1.2 (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability information and additional product content details. TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above. Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material) (3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. (4) Multiple Top-Side Markings will be inside parentheses. Only one Top-Side Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation of the previous line and the two combined represent the entire Top-Side Marking for that device. Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release. In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.

*All dimensions are nominal Device Package Type Package Drawing Pins SPQ Reel Diameter (mm) Reel Width W1 (mm) (mm) (mm) (mm) (mm) W (mm) Pin1 Quadrant PACKAGE MATERIALS INFORMATION www.ti.com 8-Apr-2013 Pack Materials-Page 1

*All dimensions are nominal Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) LM285BXMX-1.2/NOPB SOIC D 8 2500 367.0 367.0 35.0 LM285BYMX-1.2/NOPB SOIC D 8 2500 367.0 367.0 35.0 LM285MX-1.2/NOPB SOIC D 8 2500 367.0 367.0 35.0 LM385BMX-1.2 SOIC D 8 2500 367.0 367.0 35.0 LM385BMX-1.2/NOPB SOIC D 8 2500 367.0 367.0 35.0 LM385BXMX-1.2/NOPB SOIC D 8 2500 367.0 367.0 35.0 LM385BYMX-1.2 SOIC D 8 2500 367.0 367.0 35.0 LM385BYMX-1.2/NOPB SOIC D 8 2500 367.0 367.0 35.0 LM385M3-1.2 SOT-23 DBZ 3 1000 210.0 185.0 35.0 LM385M3-1.2/NOPB SOT-23 DBZ 3 1000 210.0 185.0 35.0 LM385M3X-1.2 SOT-23 DBZ 3 3000 210.0 185.0 35.0 LM385M3X-1.2/NOPB SOT-23 DBZ 3 3000 210.0 185.0 35.0 LM385MX-1.2 SOIC D 8 2500 367.0 367.0 35.0 LM385MX-1.2/NOPB SOIC D 8 2500 367.0 367.0 35.0 PACKAGE MATERIALS INFORMATION www.ti.com 8-Apr-2013 Pack Materials-Page 2

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