LM185-2.5-N_13 TI1 | Alldatasheet
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LM185-2.5-N,LM285-2.5-N,LM385-2.5-N www.ti.com SNVS743D –DECEMBER 1999–REVISED MARCH 2013 LM185-2.5-N/LM285-2.5-N/LM385-2.5-NMicropowerVoltageReferenceDiode Check forSamples: LM185-2.5-N,LM285-2.5-N,LM385-2.5-N Carefuldesign of the LM185-2.5-N has made the1FEATURES device exceptionallytolerantof capacitiveloading, 2• ±20 mV (±0.8%)max. InitialTolerance(A making it easy to use in almost any referenceGrade) application.The wide dynamic operatingrangeallows
- OperatingCurrentof20 μA to20 mA itsuse with widelyvaryingsupplieswith excellent regulation.• 0.6Ω Dynamic Impedance (A Grade) The extremelylow power drainof the LM185-2.5-N• Low Temperature Coefficient makes itusefulformicropowercircuitry.Thisvoltage• Low VoltageReference— 2.5V referencecan be used to make portablemeters,• 1.2VDevice and AdjustableDevice Also regulatorsor generalpurpose analog circuitrywith Available— LM185-1.2Seriesand LM185 batterylifeapproachingshelflife.Further,the wide Series,respectively operatingcurrentallowsittoreplaceolderreferences witha tightertolerancepart.Forapplicationsrequiring 1.2Vsee LM185-1.2.DESCRIPTION Connection Diagram Figure1.TO-92 Package Figure2.SOIC Package (Bottom View) See Package Number D0008A See Package Number LP0003A *Pin3 isattachedtotheDieAttachPad (DAP) and shouldbe connectedtoPin2 orleftfloating. Figure3. SOT-23 Pleasebe aware thatan importantnoticeconcerningavailability,standardwarranty,and use incriticalapplicationsof Texas Instrumentssemiconductorproductsand disclaimerstheretoappearsattheend ofthisdatasheet. 2Alltrademarksarethepropertyoftheirrespectiveowners. PRODUCTION DATA informationiscurrentas ofpublicationdate. Copyright© 1999–2013,Texas InstrumentsIncorporatedProductsconform to specificationsper the terms of the Texas Instrumentsstandardwarranty.Productionprocessingdoes not necessarilyincludetestingofallparameters.
LM185-2.5-N,LM285-2.5-N,LM385-2.5-N SNVS743D –DECEMBER 1999–REVISED MARCH 2013 www.ti.com Figure4. LCCC LeadlessChip Carrier Figure5.TO Package See Package Number NAJ0020A (Bottom View) See Package Number NDU0002A These deviceshave limitedbuilt-inESD protection.The leadsshouldbe shortedtogetherorthedeviceplacedinconductivefoam duringstorageorhandlingtopreventelectrostaticdamage totheMOS gates. ABSOLUTE MAXIMUM RATINGS (1)(2)(3) ReverseCurrent 30 mA ForwardCurrent 10 mA LM185-2.5-N −55°C to+ 125°C OperatingTemperatureRange (4) LM285-2.5-N −40°C to+ 85°C LM385-2.5-N 0°C to70°C ESD Susceptibility(5) 2kV StorageTemperature −55°C to+ 150°C SolderingInformation Vapor Phase (60sec.) 215°C SOIC and SOT-23 Package Infrared(15sec.) 220°C See http://www.ti.comforothermethods ofsolderingsurfacemount devices. (1) RefertoRETS185H-2.5 formilitaryspecifications. (2) AbsoluteMaximum Ratingsindicatelimitsbeyond whichdamage tothedevicemay occur.OperatingRatingsindicateconditionsfor whichthedeviceisintendedtobe functional,butdo notensurespecificperformancelimits.Forensuredspecificationsand test conditions,see theElectricalCharacteristics.The ensuredspecificationsapplyonlyforthetestconditionslisted. (3) IfMilitary/Aerospacespecifieddevicesarerequired,pleasecontacttheTISalesOffice/Distributorsforavailabilityand specifications. (4) Forelevatedtemperatureoperation,TJ MAX is: LM185-N: 150°C LM285-N: 125°C LM385-N: 100°C See THERMAL CHARACTERISTICS . (5) The human body model isa 100 pF capacitordischargedthrougha 1.5kΩ resistorintoeach pin. THERMAL CHARACTERISTICS overoperatingfree-airtemperaturerange(unlessotherwisenoted) LM185 150°C LM285 125°C Thermal Resistance SOIC-8 SOT-23 LM385 100°C TO-92 TO θja(JunctiontoAmbient) 180°C/W (0.4″ Leads) 440°C/W 165°C/W 283°C/W 170°C/W (0.125″ Leads) θjc(JunctiontoCase) N/A 80°C/W N/A N/A
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LM185-2.5-N,LM285-2.5-N,LM385-2.5-N www.ti.com SNVS743D –DECEMBER 1999–REVISED MARCH 2013
ELECTRICAL CHARACTERISTICS
LM385A-2.5-N LM385AX-2.5-N UnitsParameter Conditions Typ (Limits)LM385AY-2.5-N Tested Limit(2) Design Limit(3) ReverseBreakdown IR = 100 μA 2.500 2.480 V(Min) Voltage 2.520 V(Max) 2.500 2.470 V(Min)
2.530 V(Max)
Minimum Operating 12 18 20 μA Current (Max) ReverseBreakdown IMIN ≤ IR ≤ 1mA 1 1.5 mV VoltageChange with (Max) Current 1 mA ≤ IR ≤ 20 mA 10 20 mV (Max) ReverseDynamic IR = 100 μA, 0.2 0.6 Ω Impedance f= 20 Hz 1.5 Wideband Noise(rms) IR = 100 μA 120 μV
10 Hz ≤ f≤ 10 kHz
Long Term Stability IR = 100 μA,T = 1000 Hr, 20 ppm TA = 25°C ±0.1°C AverageTemperatureCoefficient(4) IMIN ≤ IR ≤ 20 mA X Suffix 30 ppm/°C Y Suffix 50 (Max) AllOthers 150 (1) Parametersidentifiedwithboldfacetypeapplyattemperatureextremes.Allothernumbers applyatTA = TJ = 25°C. (2) Specifiedand 100% productiontested. (3) Specified,butnot100% productiontested.These limitsarenotused tocalculateaverageoutgoingqualitylevels. (4) The averagetemperaturecoefficientisdefinedas themaximum deviationofreferencevoltageatallmeasured temperaturesbetween theoperatingTMAX and TMIN ,dividedby TMAX –TMIN .The measured temperaturesare−55°C, −40°C, 0°C, 25°C, 70°C, 85°C, 125°C. Copyright© 1999–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 3 ProductFolderLinks:LM185-2.5-N LM285-2.5-N LM385-2.5-N
LM185-2.5-N,LM285-2.5-N,LM385-2.5-N SNVS743D –DECEMBER 1999–REVISED MARCH 2013 www.ti.com LM185-2.5-N LM385B-2.5-N LM185BX-2.5-N LM185BY-2.5-N LM385BX-2.5-N LM385-2.5-N LM285-2.5-N UnitsParameter Conditions Typ (Limit)LM285BX-2.5-N LM385BY-2.5-N LM285BY-2.5-N Tested Limit(1)(2) Design Tested Design Tested Design Limit(3) Limit(1) Limit(3) Limit(1) Limit(3) ReverseBreakdown TA = 25°C, 2.5 2.462 2.462 2.425 V(Min) Voltage 20 μA ≤ IR ≤ 20 mA 2.538 2.538 2.575 V(Max) Minimum Operating 13 20 30 20 30 20 30 μA Current (Max) LM385M3-2.5-N 15 20 VoltageChange (Max) withCurrent 1 mA ≤ IR ≤ 20 mA 10 20 20 25 20 25 mV (Max) ReverseDynamic IR = 100 μA, 1 Ω Impedance f= 20 Hz Wideband Noise IR = 100 μA, 120 μV(rms) 10 Hz ≤ f≤ 10 kHz Long Term StabilityIR = 100 μA, T = 1000 Hr, 20 ppm TA = 25°C ±0.1°C Average IR = 100 μA Temperature X Suffix 30 30 ppm/°CCoefficient(4) Y Suffix 50 50 ppm/°C AllOthers 150 150 150 ppm/°C (Max) (1) Specifiedand 100% productiontested. (2) A militaryRETS electricalspecificationavailableon request. (3) Specified,butnot100% productiontested.These limitsarenotused tocalculateaverageoutgoingqualitylevels. (4) The averagetemperaturecoefficientisdefinedas themaximum deviationofreferencevoltageatallmeasured temperaturesbetween theoperatingTMAX and TMIN ,dividedby TMAX –TMIN .The measured temperaturesare−55°C, −40°C, 0°C, 25°C, 70°C, 85°C, 125°C.
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LM185-2.5-N,LM285-2.5-N,LM385-2.5-N www.ti.com SNVS743D –DECEMBER 1999–REVISED MARCH 2013 TYPICAL PERFORMANCE CHARACTERISTICS Reverse Characteristics Reverse Characteristics Figure6. Figure7. Forward Characteristics Temperature Drift Figure8. Figure9. Reverse Dynamic Reverse Dynamic Impedance Impedance Figure10. Figure11. Copyright© 1999–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 5 ProductFolderLinks:LM185-2.5-N LM285-2.5-N LM385-2.5-N
LM185-2.5-N,LM285-2.5-N,LM385-2.5-N SNVS743D –DECEMBER 1999–REVISED MARCH 2013 www.ti.com TYPICAL PERFORMANCE CHARACTERISTICS (continued) Noise Voltage FilteredOutput Noise Figure12. Figure13. Response Time Figure14.
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APPLICATIONS
Figure15.Wide InputRange Reference Figure16.Micropower Referencefrom 9V Battery LM385-2.5-NApplications IQ ≃ 30 μA standbycurrent IQ ≃ 40 μA Figure17.Micropower 5V Reference Figure18.Micropower 10V Reference PRECISION 1 μA to1 mA CURRENT SOURCES Figure19. METER THERMOMETERS Copyright© 1999–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 7 ProductFolderLinks:LM185-2.5-N LM285-2.5-N LM385-2.5-N
LM185-2.5-N,LM285-2.5-N,LM385-2.5-N SNVS743D –DECEMBER 1999–REVISED MARCH 2013 www.ti.com CalibrationCalibration 2. Remove short,adjustR2 forcorrectreadingin°F2. Remove short,adjustR2 forcorrectreadingincentigrade Figure20.0°C –100°C Thermomemter Figure21.0°F–50°F Thermomemter AdjustmentProcedure 1. AdjustTC ADJ potuntilvoltageacrossR1 equalsKelvintemperaturemultipliedby thethermocoupleSeebeck coefficient. 2. AdjustzeroADJ potuntilvoltageacrossR2 equalsthethermocoupleSeebeck coefficientmultipliedby 273.2. Figure22. Micropower Thermocouple Cold JunctionCompensator Thermocouple Type (1) Seebeck R1 R2 VoltageAcross R1 VoltageAcross R2Coefficient (Ω) (Ω) @25 °C (mV)(μV/°C) (mV) J 52.3 523 1.24k 15.60 14.32 T 42.8 432 1k 12.77 11.78 K 40.8 412 953Ω 12.17 11.17 S 6.4 63.4 150Ω 1.908 1.766 (1) Typicalsupplycurrent50 μA
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LM185-2.5-N,LM285-2.5-N,LM385-2.5-N www.ti.com SNVS743D –DECEMBER 1999–REVISED MARCH 2013 Figure23. ImprovingRegulationofAdjstableRegulators Schematic Diagram Copyright© 1999–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 9 ProductFolderLinks:LM185-2.5-N LM285-2.5-N LM385-2.5-N
LM185-2.5-N,LM285-2.5-N,LM385-2.5-N SNVS743D –DECEMBER 1999–REVISED MARCH 2013 www.ti.com
REVISION HISTORY
Changes from RevisionC (March 2013)toRevisionD Page
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www.ti.com 21-May-2013 Addendum-Page 1 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Drawing Pins Package Qty Eco Plan (2) Lead/Ball Finish MSL Peak Temp (3) Op Temp (°C) Device Marking (4/5) Samples LM185BXH-2.5 ACTIVE TO NDU 2 1000 TBD Call TI Call TI -55 to 125 LM185BXH2.5 LM185BXH-2.5/NOPB ACTIVE TO NDU 2 1000 Green (RoHS & no Sb/Br) POST-PLATE Level-1-NA-UNLIM -55 to 125 LM185BXH2.5 LM185BYH-2.5 ACTIVE TO NDU 2 1000 TBD Call TI Call TI -55 to 125 LM185BYH2.5 LM185BYH-2.5/NOPB ACTIVE TO NDU 2 1000 Green (RoHS & no Sb/Br) POST-PLATE Level-1-NA-UNLIM -55 to 125 LM185BYH2.5 LM285BXM-2.5/NOPB ACTIVE SOIC D 8 95 Green (RoHS & no Sb/Br) CU SN Level-1-260C-UNLIM -40 to 85 285BX M2.5 LM285BXMX-2.5/NOPB ACTIVE SOIC D 8 2500 Green (RoHS & no Sb/Br) CU SN Level-1-260C-UNLIM -40 to 85 285BX M2.5 LM285BXZ-2.5/NOPB ACTIVE TO-92 LP 3 1800 Green (RoHS & no Sb/Br) SNCU Level-1-NA-UNLIM -40 to 85 285BX Z2.5 LM285BYM-2.5/NOPB ACTIVE SOIC D 8 95 Green (RoHS & no Sb/Br) CU SN Level-1-260C-UNLIM -40 to 85 285BY M2.5 LM285BYMX-2.5/NOPB ACTIVE SOIC D 8 2500 Green (RoHS & no Sb/Br) CU SN Level-1-260C-UNLIM -40 to 85 285BY M2.5 LM285BYZ-2.5/NOPB ACTIVE TO-92 LP 3 1800 Green (RoHS & no Sb/Br) SNCU Level-1-NA-UNLIM -40 to 85 285BY Z2.5 LM285M-2.5/NOPB ACTIVE SOIC D 8 95 Green (RoHS & no Sb/Br) CU SN Level-1-260C-UNLIM -40 to 85 LM285 M2.5 LM285MX-2.5/NOPB ACTIVE SOIC D 8 2500 Green (RoHS & no Sb/Br) CU SN Level-1-260C-UNLIM -40 to 85 LM285 M2.5 LM285Z-2.5/LFT7 ACTIVE TO-92 LP 3 2000 Green (RoHS & no Sb/Br) SN Level-1-NA-UNLIM LM285 Z-2.5 LM285Z-2.5/NOPB ACTIVE TO-92 LP 3 1800 Green (RoHS & no Sb/Br) SNCU Level-1-NA-UNLIM -40 to 85 LM285 Z-2.5 LM385BM-2.5 ACTIVE SOIC D 8 95 TBD Call TI Call TI 0 to 70 LM385 BM2.5 LM385BM-2.5/NOPB ACTIVE SOIC D 8 95 Green (RoHS & no Sb/Br) CU SN Level-1-260C-UNLIM 0 to 70 LM385 BM2.5 LM385BMX-2.5 ACTIVE SOIC D 8 2500 TBD Call TI Call TI 0 to 70 LM385 BM2.5
www.ti.com 21-May-2013 Addendum-Page 2 Orderable Device Status (1) Package Type Package Drawing Pins Package Qty Eco Plan (2) Lead/Ball Finish MSL Peak Temp (3) Op Temp (°C) Device Marking (4/5) Samples LM385BMX-2.5/NOPB ACTIVE SOIC D 8 2500 Green (RoHS & no Sb/Br) CU SN Level-1-260C-UNLIM 0 to 70 LM385 BM2.5 LM385BXM-2.5 ACTIVE SOIC D 8 95 TBD Call TI Call TI 0 to 70 385BX M2.5 LM385BXM-2.5/NOPB ACTIVE SOIC D 8 95 Green (RoHS & no Sb/Br) CU SN Level-1-260C-UNLIM 0 to 70 385BX M2.5 LM385BXMX-2.5/NOPB ACTIVE SOIC D 8 2500 Green (RoHS & no Sb/Br) CU SN Level-1-260C-UNLIM 0 to 70 385BX M2.5 LM385BXZ-2.5/NOPB ACTIVE TO-92 LP 3 1800 Green (RoHS & no Sb/Br) SNCU Level-1-NA-UNLIM 0 to 70 385BX Z-2.5 LM385BYM-2.5/NOPB ACTIVE SOIC D 8 95 Green (RoHS & no Sb/Br) CU SN Level-1-260C-UNLIM 0 to 70 385BY M2.5 LM385BYMX-2.5/NOPB ACTIVE SOIC D 8 2500 Green (RoHS & no Sb/Br) CU SN Level-1-260C-UNLIM 0 to 70 385BY M2.5 LM385BYZ-2.5/NOPB ACTIVE TO-92 LP 3 1800 Green (RoHS & no Sb/Br) SNCU Level-1-NA-UNLIM 0 to 70 385BY Z-2.5 LM385BZ-2.5/LFT7 ACTIVE TO-92 LP 3 2000 Green (RoHS & no Sb/Br) SNCU Level-1-NA-UNLIM LM385 BZ2.5 LM385BZ-2.5/NOPB ACTIVE TO-92 LP 3 1800 Green (RoHS & no Sb/Br) SNCU Level-1-NA-UNLIM 0 to 70 LM385 BZ2.5 LM385M-2.5/NOPB ACTIVE SOIC D 8 95 Green (RoHS & no Sb/Br) CU SN Level-1-260C-UNLIM 0 to 70 LM385 M2.5 LM385M3-2.5 ACTIVE SOT-23 DBZ 3 1000 TBD Call TI Call TI 0 to 70 R12 LM385M3-2.5/NOPB ACTIVE SOT-23 DBZ 3 1000 Green (RoHS & no Sb/Br) CU SN Level-1-260C-UNLIM 0 to 70 R12 LM385M3X-2.5 ACTIVE SOT-23 DBZ 3 3000 TBD Call TI Call TI 0 to 70 R12 LM385M3X-2.5/NOPB ACTIVE SOT-23 DBZ 3 3000 Green (RoHS & no Sb/Br) CU SN Level-1-260C-UNLIM 0 to 70 R12 LM385MX-2.5 ACTIVE SOIC D 8 2500 TBD Call TI Call TI 0 to 70 LM385 M2.5 LM385MX-2.5/NOPB ACTIVE SOIC D 8 2500 Green (RoHS & no Sb/Br) CU SN Level-1-260C-UNLIM 0 to 70 LM385 M2.5 LM385Z-2.5/LFT1 ACTIVE TO-92 LP 3 2000 Green (RoHS & no Sb/Br) SNCU Level-1-NA-UNLIM LM385 Z2.5
www.ti.com 21-May-2013 Addendum-Page 3 Orderable Device Status (1) Package Type Package Drawing Pins Package Qty Eco Plan (2) Lead/Ball Finish MSL Peak Temp (3) Op Temp (°C) Device Marking (4/5) Samples LM385Z-2.5/LFT2 ACTIVE TO-92 LP 3 2000 Green (RoHS & no Sb/Br) SNCU Level-1-NA-UNLIM LM385 Z2.5 LM385Z-2.5/LFT3 ACTIVE TO-92 LP 3 2000 Green (RoHS & no Sb/Br) SNCU Level-1-NA-UNLIM LM385 Z2.5 LM385Z-2.5/LFT7 ACTIVE TO-92 LP 3 2000 Green (RoHS & no Sb/Br) SNCU Level-1-NA-UNLIM LM385 Z2.5 LM385Z-2.5/NOPB ACTIVE TO-92 LP 3 1800 Green (RoHS & no Sb/Br) SNCU Level-1-NA-UNLIM 0 to 70 LM385 Z2.5 (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability information and additional product content details. TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above. Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material) (3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. (4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device. (5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation of the previous line and the two combined represent the entire Device Marking for that device. Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
www.ti.com 21-May-2013 Addendum-Page 4 In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
*All dimensions are nominal Device Package Type Package Drawing Pins SPQ Reel Diameter (mm) Reel Width W1 (mm) (mm) (mm) (mm) (mm) W (mm) Pin1 Quadrant PACKAGE MATERIALS INFORMATION www.ti.com 8-Apr-2013 Pack Materials-Page 1
*All dimensions are nominal Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) LM285BXMX-2.5/NOPB SOIC D 8 2500 367.0 367.0 35.0 LM285BYMX-2.5/NOPB SOIC D 8 2500 367.0 367.0 35.0 LM285MX-2.5/NOPB SOIC D 8 2500 367.0 367.0 35.0 LM385BMX-2.5 SOIC D 8 2500 367.0 367.0 35.0 LM385BMX-2.5/NOPB SOIC D 8 2500 367.0 367.0 35.0 LM385BXMX-2.5/NOPB SOIC D 8 2500 367.0 367.0 35.0 LM385BYMX-2.5/NOPB SOIC D 8 2500 367.0 367.0 35.0 LM385M3-2.5 SOT-23 DBZ 3 1000 210.0 185.0 35.0 LM385M3-2.5/NOPB SOT-23 DBZ 3 1000 210.0 185.0 35.0 LM385M3X-2.5 SOT-23 DBZ 3 3000 210.0 185.0 35.0 LM385M3X-2.5/NOPB SOT-23 DBZ 3 3000 210.0 185.0 35.0 LM385MX-2.5 SOIC D 8 2500 367.0 367.0 35.0 LM385MX-2.5/NOPB SOIC D 8 2500 367.0 367.0 35.0 PACKAGE MATERIALS INFORMATION www.ti.com 8-Apr-2013 Pack Materials-Page 2
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