LM136-2.5MDR

LM136A-2.5QML_17 TI1 | Alldatasheet

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LM136A-2.5QML,LM136A-2.5QML-SP www.ti.com SNOSAM3E –JULY 2007–REVISED APPRIL 2013 LM136A-2.5QML2.5VReferenceDiode Check forSamples: LM136A-2.5QML ,LM136A-2.5QML-SP 1FEATURES DESCRIPTION The LM136A-2.5QML integratedcircuitisa precision 2• AvailablewithRadiationSpecification 2.5V shuntregulatordiode.ThismonolithicIC voltage– TotalIonizingDose 100 krad(Si) referenceoperatesas a low-temperature-coefficient – ELDRS Free 100 krad(Si) 2.5V zener with0.2Ω dynamic impedance. A third terminalon theLM136A-2.5QML allowsthereference• Low Temperature Coefficient voltageand temperaturecoefficientto be trimmed• Wide OperatingCurrentof400 μA to10 mA easily.

• SpecifiedTemperature Stability The LM136A-2.5QML isusefulas a precision2.5V• EasilyTrimmed forMinimum Temperature Drift low voltagereferencefordigitalvoltmeters,power
• FastTurn-on suppliesor op amp circuitry.The 2.5V make it convenienttoobtaina stablereferencefrom5V logic• 3–Lead TransistorPackage supplies. Further, since the LM136A-2.5QML operatesas a shunt regulator,itcan be used as eithera positiveornegativevoltagereference. Connection Diagram Bottom View Figure1. TO Package See Package Number NDV0003H Pleasebe aware thatan importantnoticeconcerningavailability,standardwarranty,and use incriticalapplicationsof Texas Instrumentssemiconductorproductsand disclaimerstheretoappearsattheend ofthisdatasheet. 2Alltrademarksarethepropertyoftheirrespectiveowners. PRODUCTION DATA informationiscurrentas ofpublicationdate. Copyright© 2007–2013,Texas InstrumentsIncorporatedProductsconform to specificationsper the terms of the Texas Instrumentsstandardwarranty.Productionprocessingdoes not necessarilyincludetestingofallparameters.

LM136A-2.5QML,LM136A-2.5QML-SP SNOSAM3E –JULY 2007–REVISED APPRIL 2013 www.ti.com Schematic Diagram TypicalApplications Figure2. 2.5VReference †Adjustto2.490V *Any siliconsignaldiode Figure3. 2.5VReferencewithMinimum Temperature Coefficient

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LM136A-2.5QML,LM136A-2.5QML-SP www.ti.com SNOSAM3E –JULY 2007–REVISED APPRIL 2013 Figure4. Wide InputRange Reference These deviceshave limitedbuilt-inESD protection.The leadsshouldbe shortedtogetherorthedeviceplacedinconductivefoam duringstorageorhandlingtopreventelectrostaticdamage totheMOS gates. Copyright© 2007–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 3 ProductFolderLinks:LM136A-2.5QML LM136A-2.5QML-SP

LM136A-2.5QML,LM136A-2.5QML-SP SNOSAM3E –JULY 2007–REVISED APPRIL 2013 www.ti.com AbsoluteMaximum Ratings(1) ReverseCurrent 15 mA ForwardCurrent 10 mA StorageTemperature −60°C ≤ TA ≤ +150°C OperatingTemperatureRange (2) −55°C ≤ TA ≤ +125°C Maximum JunctionTemperature(TJ)(2) +150°C Lead Temperature(Soldering10 seconds) 300°C ThermalResistance θJA StillAirFlow 354°C/W 500LF/MinAirFlow 77°C/W θJC 46°C/W ESD Rating(3) 1,000V (1) AbsoluteMaximum Ratingsindicatelimitsbeyond whichdamage tothedevicemay occur.OperatingRatingsindicateconditionsfor whichthedeviceisfunctional,butdo notensurespecificperformancelimits.Forensuredspecificationsand testconditions,see the ElectricalCharacteristics.The ensuredspecificationsapplyonlyforthetestconditionslisted.Some performancecharacteristicsmay degradewhen thedeviceisnotoperatedunderthelistedtestconditions. (2) The maximum power dissipationmust be deratedatelevatedtemperaturesand isdictatedby TJmax (maximum junctiontemperature), θJA (packagejunctiontoambientthermalresistance),and TA (ambienttemperature).The maximum allowablepower dissipationatany temperatureisPDmax = (TJmax -TA)/θJA orthenumber givenintheAbsoluteMaximum Ratings,whicheverislower. (3) Human body model,1.5KΩ inserieswith100pF. QualityConformance Inspection Mil-Std-883,Method 5005 -Group A Subgroup Description Temp °C

1 Statictestsat +25

2 Statictestsat +125

3 Statictestsat -55

4 Dynamic testsat +25

5 Dynamic testsat +125

6 Dynamic testsat -55

7 Functionaltestsat +25

9 Switchingtestsat +25

10 Switchingtestsat +125

11 Switchingtestsat -55

12 Settlingtimeat +25

13 Settlingtimeat +125

14 Settlingtimeat -55

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LM136A-2.5QML,LM136A-2.5QML-SP www.ti.com SNOSAM3E –JULY 2007–REVISED APPRIL 2013 LM136A-2.5QML ElectricalCharacteristicsDC Parameters(1)(2) The followingconditionsapply,unlessotherwisespecified.IR = 1mA Sub-Parameter TestConditions Notes Min Max Unit groups IAdj AdjustCurrent VAdj = 0.7V -125 +125 µA 1,2,3 ΔVZ 6.0 mV 1 DeltaZenerVoltage 0.4mA ≤ IZ ≤ 10 mA 10 mV 2,3 2.46 2.51 V 1 5 5VAdj = Open 2.44 2.54 V 2,3 VZ ZenerVoltage 2.39 2.49 V 1 VAdj = 0.7V 2.29 2.49 V 2,3 VAdj = 1.9V 2.49 2.69 V 1,2,3 See (3) 0.6 Ω 1 ZRD ReverseDynamic Impedance See (3) 1.0 Ω 2,3 VStab TemperatureStability VZ = Adjustedto2.490V 18 mV 2,3 (1) Pre and postirradiationlimitsareidenticaltothoselistedunderDC electricalcharacteristics.These partsmay be dose ratesensitivein a space environmentand may demonstrateenhanced lowdose rateeffect.Radiationend pointlimitsforthenotedparametersare specifiedonlyfortheconditionsas specifiedinMil-Std-883,Method 1019. (2) Low dose ratetestinghas been performedon a wafer-by-waferbasis,pertestmethod 1019 conditionD ofMIL-STD-883,withno enhanced lowdose ratesensitivity(ELDRS) effect. (3) Parametertestedgo-no-goonly. LM136A-2.5QML ElectricalCharacteristicsDC DriftParameters(1)(2) Deltacalculationsareperformedon QMLV devicesatGroup B,Subgroup 5 only. Sub-Parameter TestConditions Notes Min Max Unit groups VAdj = Open −10 +10 mV 1 VZ ZenerVoltage VAdj = 0.7V −10 +10 mV 1 VAdj = 1.9V −10 +10 mV 1 (1) Pre and postirradiationlimitsareidenticaltothoselistedunderDC electricalcharacteristics.These partsmay be dose ratesensitivein a space environmentand may demonstrateenhanced lowdose rateeffect.Radiationend pointlimitsforthenotedparametersare specifiedonlyfortheconditionsas specifiedinMil-Std-883,Method 1019. (2) Low dose ratetestinghas been performedon a wafer-by-waferbasis,pertestmethod 1019 conditionD ofMIL-STD-883,withno enhanced lowdose ratesensitivity(ELDRS) effect. Copyright© 2007–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 5 ProductFolderLinks:LM136A-2.5QML LM136A-2.5QML-SP

LM136A-2.5QML,LM136A-2.5QML-SP SNOSAM3E –JULY 2007–REVISED APPRIL 2013 www.ti.com TypicalPerformance Characteristics Reverse VoltageChange Zener Noise Voltage Figure5. Figure6. Dynamic Impedance Response Time Figure7. Figure8. Reverse Characteristics Forward Characteristics Figure9. Figure10.

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LM136A-2.5QML,LM136A-2.5QML-SP www.ti.com SNOSAM3E –JULY 2007–REVISED APPRIL 2013 TypicalPerformance Characteristics(continued) Temperature Drift Figure11. Copyright© 2007–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 7 ProductFolderLinks:LM136A-2.5QML LM136A-2.5QML-SP

LM136A-2.5QML,LM136A-2.5QML-SP SNOSAM3E –JULY 2007–REVISED APPRIL 2013 www.ti.com APPLICATION HINTS The LM136 voltagereferenceismuch easierto use than ordinaryzener diodes.It'slow impedance and wide operatingcurrentrange simplifybiasingin almost any circuit.Further,eitherthe breakdown voltageor the temperaturecoefficientcan be adjustedtooptimizecircuitperformance. Figure12 shows an LM136 witha 10k potentiometerforadjustingthe reversebreakdown voltage.With the additionofR1 thebreakdown voltagecan be adjustedwithoutaffectingthetemperaturecoefficientofthedevice. The adjustmentrangeisusuallysufficienttoadjustforboththeinitialdevicetoleranceand inaccuraciesinbuffer circuitry. Ifminimum temperaturecoefficientis desired,two diodes can be added in serieswith the adjustment potentiometeras shown in Figure13. When the deviceisadjustedto 2.490V the temperaturecoefficientis minimized.Almostany siliconsignaldiodecan be used forthispurposesuch as a 1N914, 1N4148 ora 1N457. For propertemperaturecompensationthediodesshouldbe inthesame thermalenvironmentas theLM136. Itis usuallysufficienttomount thediodesneartheLM136 on theprintedcircuitboard.The absoluteresistanceofR1 isnotcriticaland any valuefrom2k to20k willwork. Figure12. LM136 With Pot forAdjustment ofBreakdown Voltage (TrimRange = ±120 mV typical) Figure13. Temperature CoefficientAdjustment (TrimRange = ±70 mV typical)

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LM136A-2.5QML,LM136A-2.5QML-SP www.ti.com SNOSAM3E –JULY 2007–REVISED APPRIL 2013 *L1 60 turns#16 wireon ArnoldCore A-254168-2 †Efficiency≈ 80% Figure14. Low Cost 2 Amp SwitchingRegulator† Figure15. PrecisionPower RegulatorwithLow Temperature Coefficient Figure16. 5V Crowbar Copyright© 2007–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 9 ProductFolderLinks:LM136A-2.5QML LM136A-2.5QML-SP

LM136A-2.5QML,LM136A-2.5QML-SP SNOSAM3E –JULY 2007–REVISED APPRIL 2013 www.ti.com *Does notaffecttemperaturecoefficient Figure17. Trimmed 2.5VReferencewith Temperature CoefficientIndependent ofBreakdown Voltage Figure18. AdjustableShunt Regulator Figure19. LinearOhmmeter

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LM136A-2.5QML,LM136A-2.5QML-SP www.ti.com SNOSAM3E –JULY 2007–REVISED APPRIL 2013 Figure20. Op Amp withOutput Clamped Figure21. BipolarOutput Reference Figure22. 2.5VSquare Wave Calibrator Copyright© 2007–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 11 ProductFolderLinks:LM136A-2.5QML LM136A-2.5QML-SP

LM136A-2.5QML,LM136A-2.5QML-SP SNOSAM3E –JULY 2007–REVISED APPRIL 2013 www.ti.com Figure23. 5V BufferedReference Figure24. Low Noise BufferedReference

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LM136A-2.5QML,LM136A-2.5QML-SP www.ti.com SNOSAM3E –JULY 2007–REVISED APPRIL 2013

REVISION HISTORY

Date Released Revision Section Changes 07/06/07 A New Release,Corporateformat 2 MDS datasheetsconvertedintoone corporate datasheetformat.MNLM136 –2.5–X Rev 0A0 and MNLM136A-2.5 –X-RH. The ELDRS Parthas also been added.Rev.0E0 willbe archived. 10/16/2010 B Data SheetTitle,GeneralDescription,Order Update withcurrentdeviceinformationand format. Information,ElectricalCharacteristics, Removed allreferencestotheLM136-2.5Non “A” ApplicationHints package NSID no longeroffered.Added DieNSID 's to datasheet.RevisionA willbe Archived. Changes from RevisionD (April2013)toRevisionE Page Copyright© 2007–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 13 ProductFolderLinks:LM136A-2.5QML LM136A-2.5QML-SP

www.ti.com 17-Mar-2017 Addendum-Page 1 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Drawing Pins Package Qty Eco Plan (2) Lead/Ball Finish (6) MSL Peak Temp (3) Op Temp (°C) Device Marking (4/5) Samples 5962R0050101V9A ACTIVE DIESALE Y 0 40 Green (RoHS & no Sb/Br) Call TI Level-1-NA-UNLIM -55 to 125 5962R0050101VXA ACTIVE TO NDV 3 20 TBD Call TI Call TI -55 to 125 R0050101VXA Q 5962R0050102V9A ACTIVE DIESALE Y 0 40 Green (RoHS & no Sb/Br) Call TI Level-1-NA-UNLIM -55 to 125 5962R0050102VXA ACTIVE TO NDV 3 20 TBD Call TI Call TI -55 to 125 R0050102VXA Q LM136-2.5 MD8 ACTIVE DIESALE Y 0 400 Green (RoHS & no Sb/Br) Call TI Level-1-NA-UNLIM -55 to 125 LM136-2.5 MDE ACTIVE DIESALE Y 0 40 Green (RoHS & no Sb/Br) Call TI Level-1-NA-UNLIM -55 to 125 LM136-2.5 MDR ACTIVE DIESALE Y 0 40 Green (RoHS & no Sb/Br) Call TI Level-1-NA-UNLIM -55 to 125 LM136AH-2.5/883 ACTIVE TO NDV 3 20 TBD Call TI Call TI -55 to 125 LM136A-2.5 Q LM136AH-2.5RLQV ACTIVE TO NDV 3 20 TBD Call TI Call TI -55 to 125 R0050102VXA Q LM136AH-2.5RQV ACTIVE TO NDV 3 20 TBD Call TI Call TI -55 to 125 R0050101VXA Q (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability information and additional product content details. TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above. Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material)

www.ti.com 17-Mar-2017 Addendum-Page 2 (3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. (4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device. (5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation of the previous line and the two combined represent the entire Device Marking for that device. (6) Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish value exceeds the maximum column width. Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release. In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis. OTHER QUALIFIED VERSIONS OF LM136A-2.5QML, LM136A-2.5QML-SP :

• Military: LM136A-2.5QML
• Space: LM136A-2.5QML-SP NOTE: Qualified Version Definitions:
• Military - QML certified for Military and Defense Applications
• Space - Radiation tolerant, ceramic packaging and qualified for use in Space-based application

www.ti.com PACKAGE OUTLINE ( 2.54) 1.16 0.92 4.95 4.55 0.76 MAX 2.67 MAX

0.64 MAX

12.7 MIN

3X 0.483 0.407 -5.56 5.32 1.22 0.72 TO-CAN - 2.67 mm max heightNDV0003H TO-46 4219876/A 01/2017 NOTES: 1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing per ASME Y14.5M. 2. This drawing is subject to change without notice. 3. Reference JEDEC registration TO-46. SCALE 1.250

www.ti.com EXAMPLE BOARD LAYOUT

0.07 MAX

( 1.2) METAL 2X ( 1.2) METAL 3X ( 0.7) VIA (R0.05) TYP (2.54) (1.27) TO-CAN - 2.67 mm max heightNDV0003H TO-46 4219876/A 01/2017 LAND PATTERN EXAMPLE NON-SOLDER MASK DEFINED SCALE:12X SOLDER MASK OPENING SOLDER MASK OPENING

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