LM134H

LM134_16 TI1 | Alldatasheet

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LM134,LM234,LM334 www.ti.com SNVS746E –MARCH 2000–REVISED MAY 2013 LM134/LM234/LM3343-TerminalAdjustableCurrentSources Check forSamples: LM134 ,LM234 ,LM334 1FEATURES The sense voltageused toestablishoperatingcurrent2• Operates From 1V to40V in the LM134 is 64mV at 25°C and is directly• 0.02%/V CurrentRegulation proportionalto absolute temperature (°K). The• Programmable From 1μA to10mA simplestone externalresistorconnection,then, generatesa currentwith ≈+0.33%/°C temperature• True 2-TerminalOperation dependence.Zero driftoperationcan be obtainedby• Availableas FullySpecifiedTemperature addingone extraresistorand a diode.Sensor Applicationsfor the currentsources includebias• ±3% InitialAccuracy networks,surge protection,low power reference, The LM134 isspecifiedovera temperaturerange ofThe LM134/LM234/LM334 are truefloatingcurrent −55°C to+125°C, theLM234 from −25°C to+100°Csourceswithno separatepower supplyconnections. and the LM334 from 0°C to +70°C. These devicesInaddition,reverseappliedvoltagesofup to20V will are availablein TO hermetic,TO-92 and SOIC-8draw only a few dozen microamperes of current, plasticpackages.allowingthe devicesto act as both a rectifierand currentsourceinAC applications. Connection Diagrams Figure1.SOIC-8 SurfaceMount Package Figure2.SOIC-8 AlternativePinoutSurfaceMount LM334MX/NOPB) (LM334SM; LM334SM/NOPB; LM334SMX; LM334SMX/NOPB)See Package Number D See Package Number D Figure3.TO MetalCan Package (Bottom View) Figure4.TO-92 PlasticPackage (Bottom View) See Package Number NDV See Package Number LP Pleasebe aware thatan importantnoticeconcerningavailability,standardwarranty,and use incriticalapplicationsof Texas Instrumentssemiconductorproductsand disclaimerstheretoappearsattheend ofthisdatasheet. 2Alltrademarksarethepropertyoftheirrespectiveowners. PRODUCTION DATA informationiscurrentas ofpublicationdate. Copyright© 2000–2013,Texas InstrumentsIncorporatedProductsconform to specificationsper the terms of the Texas Instrumentsstandardwarranty.Productionprocessingdoes not necessarilyincludetestingofallparameters.

LM134,LM234,LM334 SNVS746E –MARCH 2000–REVISED MAY 2013 www.ti.com These deviceshave limitedbuilt-inESD protection.The leadsshouldbe shortedtogetherorthedeviceplacedinconductivefoam duringstorageorhandlingtopreventelectrostaticdamage totheMOS gates. AbsoluteMaximum Ratings(1)(2) V+ toV− ForwardVoltage LM134/LM234/LM334 40V LM234-3/LM234-6 30V V+ toV− ReverseVoltage 20V R PintoV− Voltage 5V SetCurrent 10 mA Power Dissipation 400 mW ESD Susceptibility(3) 2000V OperatingTemperatureRange (4) LM134 −55°C to+125°C LM234/LM234-3/LM234-6 −25°C to+100°C LM334 0°C to+70°C SolderingInformation TO-92 Package (10sec.) 260°C Infrared(15sec.) 220°C (1) “AbsoluteMaximum Ratings”indicatelimitsbeyond whichdamage tothedevicemay occur.OperatingRatingsindicateconditionsfor whichthedeviceisfunctional,butdo notensurespecificperformancelimits. (2) IfMilitary/Aerospacespecifieddevicesarerequired,pleasecontacttheTexas InstrumentsSalesOffice/Distributorsforavailabilityand specifications. (3) Human body model,100pF dischargedthrougha 1.5kΩ resistor. (4) Forelevatedtemperatureoperation,TJ max is: LM134 150°C LM234 125°C LM334 100°C See ThermalCharacteristics. Thermal Characteristics overoperatingfree-airtemperaturerange(unlessotherwisenoted) Thermal Resistance TO-92 TO SOIC-8 θja(JunctiontoAmbient) 180°C/W (0.4″ leads) 440°C/W 165°C/W 160°C/W (0.125″ leads) θjc(JunctiontoCase) N/A 32°C/W 80°C/W

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LM134,LM234,LM334 www.ti.com SNVS746E –MARCH 2000–REVISED MAY 2013 ElectricalCharacteristics(1) LM134/LM234 LM334 Parameter Conditions Units Min Typ Max Min Typ Max SetCurrentError,V+=2.5V(2) 10μA ≤ ISET ≤ 1mA 3 6 % 1mA < ISET ≤ 5mA 5 8 % 2μA ≤ ISET < 10μA 8 12 % RatioofSetCurrenttoBias 100μA ≤ ISET ≤ 1mA 14 18 23 14 18 26 Current 1mA ≤ ISET ≤ 5mA 14 14 2 μA≤ISET ≤100 μA 18 23 18 26 Minimum OperatingVoltage 2μA ≤ ISET ≤ 100μA 0.8 0.8 V 100μA < ISET ≤ 1mA 0.9 0.9 V 1mA < ISET ≤ 5mA 1.0 1.0 V withInputVoltage 5V ≤ V+ ≤ 40V 0.01 0.03 0.01 0.05 %/V 1mA < ISET ≤ 5mA 1.5V≤ V ≤ 5V 0.03 0.03 %/V 5V ≤ V ≤ 40V 0.02 0.02 %/V TemperatureDependence of 25μA ≤ ISET ≤ 1mA 0.96T T 1.04T 0.96T T 1.04T SetCurrent(3) EffectiveShuntCapacitance 15 15 pF (1) Unlessotherwisespecified,testsareperformedatTj= 25°C withpulsetestingso thatjunctiontemperaturedoes notchange duringtest (2) SetcurrentisthecurrentflowingintotheV+ pin.FortheBasic2-TerminalCurrentSourcecircuitshown inFigure13.ISET isdetermined by thefollowingformula:ISET = 67.7mV/R SET (@ 25°C).Setcurrenterrorisexpressedas a percentdeviationfromthisamount.ISET increasesat0.336%/°C @ Tj= 25°C (227μV/°C). (3) ISET isdirectlyproportionaltoabsolutetemperature(°K).ISET atany temperaturecan be calculatedfrom:ISET = Io (T/To)where Io isISET measured atTo (°K). ElectricalCharacteristics(1) LM234-3 LM234-6 Parameter Conditions Units Min Typ Max Min Typ Max SetCurrentError,V+=2.5V (2) 100μA ≤ ISET ≤ 1mA ±1 ±2 % TJ = 25° EquivalentTemperatureError ±3 ±6 °C RatioofSetCurrenttoBias 100μA ≤ ISET ≤ 1mA 14 18 26 14 18 26 Current Minimum OperatingVoltage 100μA ISET ≤ 1mA 0.9 0.9 V withInputVoltage 5V ≤ V+ ≤ 30V 0.01 0.03 0.01 0.05 %/V TemperatureDependence of 100μA ≤ ISET ≤ 1mA 0.98T T 1.02T 0.97T T 1.03T SetCurrent(3) EquivalentSlopeError ±2 ±3 % EffectiveShuntCapacitance 15 15 pF (1) Unlessotherwisespecified,testsareperformedatTj= 25°C withpulsetestingso thatjunctiontemperaturedoes notchange duringtest (2) SetcurrentisthecurrentflowingintotheV+ pin.FortheBasic2-TerminalCurrentSourcecircuitshown inFigure13.ISET isdetermined by thefollowingformula:ISET = 67.7mV/R SET (@ 25°C).Setcurrenterrorisexpressedas a percentdeviationfromthisamount.ISET increasesat0.336%/°C @ Tj= 25°C (227μV/°C). (3) ISET isdirectlyproportionaltoabsolutetemperature(°K).ISET atany temperaturecan be calculatedfrom:ISET = Io (T/To)where Io isISET measured atTo (°K). Copyright© 2000–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 3 ProductFolderLinks:LM134 LM234 LM334

LM134,LM234,LM334 SNVS746E –MARCH 2000–REVISED MAY 2013 www.ti.com TypicalPerformance Characteristics Maximum Slew Rate Output Impedance LinearOperation Figure5. Figure6. Start-Up TransientResponse Figure7. Figure8. VoltageAcross R SET (VR ) CurrentNoise Figure9. Figure10.

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LM134,LM234,LM334 www.ti.com SNVS746E –MARCH 2000–REVISED MAY 2013 TypicalPerformance Characteristics(continued) Turn-On Voltage RatioofISET toIBIAS Figure11. Figure12. Copyright© 2000–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 5 ProductFolderLinks:LM134 LM234 LM334

LM134,LM234,LM334 SNVS746E –MARCH 2000–REVISED MAY 2013 www.ti.com APPLICATION HINTS The LM134 has been designedforease ofapplication,buta generaldiscussionofdesignfeaturesispresented heretofamiliarizethedesignerwithdevicecharacteristicswhichmay notbe immediatelyobvious.These include theeffectsofslewing,power dissipation,capacitance,noise,and contactresistance. CalculatingR SET The totalcurrentthroughtheLM134 (ISET )isthesum ofthecurrentgoingthroughtheSET resistor(IR )and the LM134's biascurrent(IBIAS),as shown inFigure13. Figure13. Basic CurrentSource A graph showing theratioofthesetwo currentsissuppliedunderRatioof ISET to IBIAS inTypicalPerformance Characteristics. The currentflowingthroughR SET isdeterminedby VR , which isapproximately214μV/°K (64 mV/298°K ∼ 214μV/°K). (1) Since(fora givensetcurrent)IBIAS issimplya percentageofISET ,theequationcan be rewritten where

• n istheratioofISET toIBIAS as specifiedinElectricalCharacteristicsand shown inthegraph (2) Sincen istypically18 for2μA ≤ ISET ≤ 1mA, theequationcan be furthersimplifiedto (3) formost setcurrents. Slew Rate At slewratesabove a giventhreshold(seecurve),theLM134 may exhibitnon-linearcurrentshifts.The slewing rateatwhich thisoccursisdirectlyproportionaltoISET .At ISET = 10μA, maximum dV/dtis0.01V/μs;atISET = 1mA, thelimitis1V/μs.Slew ratesabove thelimitdo notharm theLM134, orcause largecurrentstoflow. Thermal Effects Internalheatingcan have a significanteffecton currentregulationforISET greaterthan100μA.Forexample,each 1V increaseacrossthe LM134 at ISET = 1 mA willincreasejunctiontemperatureby ≈0.4°C instillair.Output current(ISET )has a temperaturecoefficientof≈0.33%/°C, so thechange incurrentdue totemperaturerisewillbe effects,therefore,must be taken intoaccountwhen DC regulationiscriticaland ISET exceeds 100μA. Heat sinkingoftheTO package ortheTO-92 leadscan reducethiseffectby more than3:1.

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LM134,LM234,LM334 www.ti.com SNVS746E –MARCH 2000–REVISED MAY 2013 Shunt Capacitance Incertainapplications,the15 pF shuntcapacitanceoftheLM134 may have tobe reduced,eitherbecause of loadingproblems or because itlimitsthe AC outputimpedance of the currentsource.This can be easily accomplishedby bufferingtheLM134 withan FET as shown intheapplications.Thiscan reducecapacitanceto lessthan3 pF and improveregulationby atleastan orderofmagnitude.DC characteristics(withtheexception ofminimum inputvoltage),arenotaffected. Noise Currentnoisegeneratedby theLM134 isapproximately4 timestheshotnoiseofa transistor.IftheLM134 is used as an activeloadfora transistoramplifier,inputreferrednoisewillbe increasedby about12dB. Inmany cases,thisisacceptableand a singlestageamplifiercan be builtwitha voltagegainexceeding2000. Lead Resistance The sense voltagewhich determinesoperatingcurrentof the LM134 is less than 100mV. At thislevel, thermocoupleor leadresistanceeffectsshouldbe minimizedby locatingthe currentsettingresistorphysically closetothedevice.Socketsshouldbe avoidedifpossible.Ittakesonly0.7Ω contactresistancetoreduceoutput currentby 1% atthe1 mA level. Sensing Temperature The LM134 makes an idealremote temperaturesensor because itscurrentmode operationdoes not lose accuracyoverlongwireruns.OutputcurrentisdirectlyproportionaltoabsolutetemperatureindegreesKelvin, accordingtothefollowingformula: (4) CalibrationoftheLM134 isgreatlysimplifiedbecause ofthefactthatmost oftheinitialinaccuracyisdue toa gainterm(slopeerror)and notan offset.Thismeans thata calibrationconsistingofa gainadjustmentonlywill trimbothslopeand zeroatthesame time.Inaddition,gainadjustmentisa one pointtrimbecause theoutputof theLM134 extrapolatestozeroat0°K,independentofR SET orany initialinaccuracy. Figure14. Gain Adjustment This propertyof the LM134 isillustratedin the accompanying graph.Line abc isthe sensor currentbefore trimming.Linea′b′c′ isthe desiredoutput.A gaintrimdone at T2 willmove the outputfrom b to b′ and will simultaneouslycorrecttheslopeso thattheoutputatT1 and T3 willbe correct.Thisgaintrimcan be done on R SET oron theloadresistorused toterminatetheLM134. Slopeerroraftertrimwillnormallybe lessthan±1%. To maintainthisaccuracy,however,a lowtemperaturecoefficientresistormust be used forR SET . A 33 ppm/°C driftof R SET willgivea 1% slopeerrorbecause the resistorwillnormallysee about the same temperaturevariationsas theLM134. SeparatingR SET fromtheLM134 requires3 wiresand has leadresistance problems,so is not normallyrecommended. Metal filmresistorswithlessthan 20 ppm/°C driftare readily available.Wirewound resistorsmay alsobe used where beststabilityisrequired. Copyright© 2000–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 7 ProductFolderLinks:LM134 LM234 LM334

LM134,LM234,LM334 SNVS746E –MARCH 2000–REVISED MAY 2013 www.ti.com Applicationas a Zero Temperature CoefficentCurrentSource Adding a diode and a resistorto the standardLM134 configurationcan cancelthe temperature-dependent characteristicoftheLM134. The circuitshown inFigure15 balancesthepositivetempco oftheLM134 (about +0.23mV/°C) withthenegativetempco ofa forward-biasedsilicondiode(about−2.5mV/°C). Figure15. Zero Tempco CurrentSource The setcurrent(ISET ) isthesum ofI1 and I2,each contributingapproximately50% ofthesetcurrent,and IBIAS. IBIAS is usuallyincludedin the I1 term by increasingthe VR value used forcalculationsby 5.9%. (See CALCULATING R SET .) (5) The firststepistominimizethetempco ofthecircuit,usingthefollowingequations.An example isgivenusinga valueof+227μV/°C as thetempco oftheLM134 (whichincludestheIBIAS component),and −2.5mV/°C as the tempco ofthediode(forbestresults,thisvalueshouldbe directlymeasured orobtainedfromthemanufacturer ofthediode). (6) (7) With theR 1 toR 2 ratiodetermined,valuesforR 1 and R 2 shouldbe determinedtogivethedesiredsetcurrent. The formulaforcalculatingthesetcurrentatT = 25°C isshown below,followedby an example thatassumes the forwardvoltagedropacrossthediode(VD )is0.6V,thevoltageacrossR 1 is67.7mV (64mV + 5.9% toaccount forIBIAS),and R 2/R1 = 10 (fromthepreviouscalculations).

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LM134,LM234,LM334 www.ti.com SNVS746E –MARCH 2000–REVISED MAY 2013 (8) This circuitwilleliminatemost of the LM134's temperaturecoefficient,and itdoes a good job even ifthe estimatesofthediode'scharacteristicsarenotaccurate(asthefollowingexample willshow).For lowesttempco witha specificdiodeatthedesiredISET ,however,thecircuitshouldbe builtand testedovertemperature.Ifthe measured tempco of ISET ispositive,R 2 shouldbe reduced.Ifthe resultingtempco isnegative,R 2 shouldbe increased.The recommended diodeforuse inthiscircuitisthe 1N457 because itstempco iscenteredat 11 timesthetempco oftheLM134, allowingR 2 = 10 R 1.You can alsouse thiscircuittocreatea currentsourcewith non-zerotempcos by settingthetempco component ofthetempco equationtothedesiredvalueinsteadof0. EXAMPLE: A 1mA, Zero-Tempco CurrentSource First,solveforR 1 and R 2: (9) The valuesofR 1 and R 2 can be changed tostandard1% resistorvalues(R1 = 133Ω and R 2 = 1.33kΩ)withless thana 0.75% error. Iftheforwardvoltagedropofthediodewas 0.65V insteadoftheestimateof0.6V (anerrorof8%), theactualset currentwillbe (10) an erroroflessthan5%. Ifthe estimateforthe tempco of the diode'sforwardvoltagedrop was off,the tempco cancellationis still reasonablyeffective.Assume thetempco ofthediodeis2.6mV/°C insteadof2.5mV/°C (an errorof4%). The tempco ofthecircuitisnow: (11) A 1mA LM134 currentsource withno temperaturecompensationwould have a set resistorof 68Ω and a resultingtempco of (12) So even ifthediode'stempco variesas much as ±4% fromitsestimatedvalue,thecircuitstilleliminates98% of theLM134's inherenttempco. Copyright© 2000–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 9 ProductFolderLinks:LM134 LM234 LM334

LM134,LM234,LM334 SNVS746E –MARCH 2000–REVISED MAY 2013 www.ti.com TypicalApplications *SelectR3 = VREF /583μA.VREF may be any stablepositivevoltage≥ 2V TrimR3 tocalibrate Figure16. Ground ReferredFahrenheitThermometer Figure17. TerminatingRemote Sensor forVoltageOutput *Outputimpedance oftheLM134 atthe“R ”pinisapproximately where R 2 istheequivalentexternalresistanceconnectedfromtheV− pintoground.Thisnegativeresistancecan be reducedby a factorof5 ormore by insertingan equivalentresistorR 3 = (R2/16)inserieswiththeoutput. Figure18. Low Output Impedance Thermometer

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LM134,LM234,LM334 www.ti.com SNVS746E –MARCH 2000–REVISED MAY 2013 Figure19. Low Output Impedance Thermometer *SelectR1 and C1 foroptimum stability Figure20. HigherOutput Current Figure21. Basic 2-TerminalCurrentSource Copyright© 2000–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 11 ProductFolderLinks:LM134 LM234 LM334

LM134,LM234,LM334 SNVS746E –MARCH 2000–REVISED MAY 2013 www.ti.com Figure22. Micropower Bias Figure23. Low InputVoltageReferenceDriver Figure24. Ramp Generator

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LM134,LM234,LM334 www.ti.com SNVS746E –MARCH 2000–REVISED MAY 2013 *SelectratioofR1 toR2 toobtainzerotemperaturedrift Figure25. 1.2VReferenceOperates on 10 μA and 2V *SelectratioofR1 toR2 forzerotemperaturedrift Figure26. 1.2VRegulatorwith1.8VMinimum Input Figure27. Zener Biasing Copyright© 2000–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 13 ProductFolderLinks:LM134 LM234 LM334

LM134,LM234,LM334 SNVS746E –MARCH 2000–REVISED MAY 2013 www.ti.com *For±10% adjustment,selectR SET 10% high,and make R1 ≈ 3 R SET Figure28. AlternateTrimming Technique Figure29. BufferforPhotoconductiveCell *SelectQ1 orQ2 toensureatleast1V acrosstheLM134. Vp (1− ISET /IDSS )≥ 1.2V.

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LM134,LM234,LM334 www.ti.com SNVS746E –MARCH 2000–REVISED MAY 2013 Figure30. FET Cascoding forLow Capacitanceand/orUltraHigh Output Impedance *ZOUT ≈ −16 • R1 (R1/VIN must notexceed ISET ) Figure31. GeneratingNegativeOutput Impedance *Use minimum valuerequiredtoensurestabilityofprotecteddevice.Thisminimizesinrushcurrenttoa directshort. Figure32. In-LineCurrentLimiter Copyright© 2000–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 15 ProductFolderLinks:LM134 LM234 LM334

LM134,LM234,LM334 SNVS746E –MARCH 2000–REVISED MAY 2013 www.ti.com Schematic Diagram

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LM134,LM234,LM334 www.ti.com SNVS746E –MARCH 2000–REVISED MAY 2013

REVISION HISTORY

Changes from RevisionC (April2013)toRevisionD Page Copyright© 2000–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 17 ProductFolderLinks:LM134 LM234 LM334

www.ti.com 27-Jul-2016 Addendum-Page 1 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Drawing Pins Package Qty Eco Plan (2) Lead/Ball Finish (6) MSL Peak Temp (3) Op Temp (°C) Device Marking (4/5) Samples LM134 MDC ACTIVE DIESALE Y 0 400 Green (RoHS & no Sb/Br) Call TI Level-1-NA-UNLIM -40 to 85 LM134H ACTIVE TO NDV 3 1000 TBD Call TI Call TI -55 to 125 ( LM134H ~ LM134H) LM134H/NOPB ACTIVE TO NDV 3 1000 Green (RoHS & no Sb/Br) Call TI Level-1-NA-UNLIM -55 to 125 ( LM134H ~ LM134H) LM234Z-3/NOPB ACTIVE TO-92 LP 3 1800 Green (RoHS & no Sb/Br) CU SN N / A for Pkg Type -25 to 100 LM234 Z-3 LM234Z-6/NOPB ACTIVE TO-92 LP 3 1800 Green (RoHS & no Sb/Br) CU SN N / A for Pkg Type -25 to 100 LM234 Z-6 LM334 MWC ACTIVE WAFERSALE YS 0 1 Green (RoHS & no Sb/Br) Call TI Level-1-NA-UNLIM -40 to 85 LM334M NRND SOIC D 8 95 TBD Call TI Call TI 0 to 70 LM334 M LM334M/NOPB ACTIVE SOIC D 8 95 Green (RoHS & no Sb/Br) CU SN Level-1-260C-UNLIM 0 to 70 LM334 M LM334MX/NOPB ACTIVE SOIC D 8 2500 Green (RoHS & no Sb/Br) CU SN Level-1-260C-UNLIM 0 to 70 LM334 M LM334SM NRND SOIC D 8 95 TBD Call TI Call TI 0 to 70 LM334 SM LM334SM/NOPB ACTIVE SOIC D 8 95 Green (RoHS & no Sb/Br) CU SN Level-1-260C-UNLIM 0 to 70 LM334 SM LM334SMX NRND SOIC D 8 2500 TBD Call TI Call TI 0 to 70 LM334 SM LM334SMX/NOPB ACTIVE SOIC D 8 2500 Green (RoHS & no Sb/Br) CU SN Level-1-260C-UNLIM 0 to 70 LM334 SM LM334Z/LFT1 ACTIVE TO-92 LP 3 2000 Green (RoHS & no Sb/Br) CU SN N / A for Pkg Type LM334 Z LM334Z/NOPB ACTIVE TO-92 LP 3 1800 Green (RoHS & no Sb/Br) CU SN N / A for Pkg Type 0 to 70 LM334 Z (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available.

www.ti.com 27-Jul-2016 Addendum-Page 2 OBSOLETE: TI has discontinued the production of the device. (2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability information and additional product content details. TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above. Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material) (3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. (4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device. (5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation of the previous line and the two combined represent the entire Device Marking for that device. (6) Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish value exceeds the maximum column width. Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release. In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.

*All dimensions are nominal Device Package Type Package Drawing Pins SPQ Reel Diameter (mm) Reel Width W1 (mm) (mm) (mm) (mm) (mm) W (mm) Pin1 Quadrant PACKAGE MATERIALS INFORMATION www.ti.com 5-Dec-2014 Pack Materials-Page 1

*All dimensions are nominal Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) LM334MX/NOPB SOIC D 8 2500 367.0 367.0 35.0 LM334SMX SOIC D 8 2500 367.0 367.0 35.0 LM334SMX/NOPB SOIC D 8 2500 367.0 367.0 35.0 PACKAGE MATERIALS INFORMATION www.ti.com 5-Dec-2014 Pack Materials-Page 2

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