MDLM111-X NSC | Alldatasheet
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Technical content
Original Creation Date: 01/10/01 Last Update Date: 04/20/01 Last Major Revision Date: MDLM111-X REV 0B0 MICROCIRCUIT DATA SHEET VOLTAGE COMPARATOR General Description The LM111, is a voltage comparator that has input currents nearly a thousand times lower than devices such as the LM106 and LM710. It is also designed to operate over a wider range of supply voltages: from standard +15V op amp supplies down to the single 5V supply used for IC logic. Its output is compatible with RTL, DTL and TTL as well as MOS circuits. Further, it can drive lamps or relays, switching voltages up to 50V at currents as high as 50mA. Both the inputs and the outputs of the LM111, can be isolated from system ground, and the output can drive loads referred to ground, the positive supply or the negative supply. Offset balancing and strobe capability are provided and outputs can be wire OR'ed. Although slower than the LM106 and LM710 (200 ns response time vs 40ns) the devices are also much less prone to spurious oscillations. The LM111 has the same pin configuration as the LM106 and LM710. NS Part Numbers LM111E-SMD LM111H-SMD LM111J-8-SMD LM111WG-SMD Industry Part Number LM111 Prime Die LM111 Controlling Document SEE FEATURES SECTION Processing MIL-STD-883, Method 5004 Quality Conformance Inspection MIL-STD-883, Method 5005 Subgrp Description Temp ( C) o Static tests at +25 Static tests at +125 Static tests at -55 Dynamic tests at +25 Dynamic tests at +125 Dynamic tests at -55 Functional tests at +25 Functional tests at +125 Functional tests at -55 Switching tests at +25 Switching tests at +125 Switching tests at -55
Features
- Low Input Bias Current. - Low Input Offset Current. - Wide Differential Input Voltage. - Power Supply Voltage, Single 5V to +15V. - Offset Voltage Null Capability. - Strobe Capability. CONTROLLING DOCUMENTS: LM111E-SMD 5962-8687701Q2A LM111H-SMD 5962-8687701QGA LM111J-8-SMD 5962-8687701QPA LM111WG-SMD 5962-8687701QZA
(Absolute Maximum Ratings) (Note 1) Positive Supply Voltage +30.0V Negative Supply Voltage -30.0V Total Supply Voltage 36V Output to Negative Supply Voltage 50V GND to Negative Supply Voltage 30V Differential Input Voltage +30V Sink Current 50mA Input Voltage (Note 2) +15V Power Dissipation (Note 3) 500mW Output Short Circuit Duration 10 sec. Maximum Strobe Current 10mA Operating Temperature Range -55 C < Ta < 125 C Thermal Resistance ThetaJA
134 C/W
8 Ld DIP (Still Air @ 0.5W)
76 C/W
(500LF/Min Air flow @ 0.5W)
162 C/W
8 Ld Metal Can Pkg (Still Air @ 0.5W)
92 C/W
(500LF/Min Air flow @ 0.5W)
231 C/W
10 CERAMIC SOIC (Still Air @ 0.5W)
153 C/W
(500LF/Min Air flow @ 0.5W)
90 C/W
20 Ld LCC (Still Air @ 0.5W)
65 C/W
(500LF/Min Air flow @ 0.5W) ThetaJC
21 C/W
8 Ld DIP
50 C/W
8 Ld Metal Can Pkg
24 C/W
10 CERAMIC SOIC
20 Ld LCC
-65 C < Ta < 150 C Maximum Junction Temperature 175 C Lead Temperature 300 C (Soldering, 60 seconds) Voltage at Strobe Pin V+ -5V Package Weight (Typical) 965mg
8 Ld Metal Can
10 Ld CERAMIC SOIC
(Note 4)
(Absolute Maximum Ratings)(Continued) (Note 1) ESD Rating (Note 4) 300V Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is functional, but do not guarantee specific performance limits. For guaranteed specifications and test conditions, see the Electrical Characteristics. The guaranteed specifications apply only for the test conditions listed. Some performance characteristics may degrade when the device is not operated under the listed test conditions. Note 2: This rating applies for +15V supplies. The positive input voltage limits is 30V above the negative supply. The negative input voltage limits is equal to the negative supply voltage or 30V below the positive supply, whichever is less. Note 3: The maximum power dissipation must be derated at elevated temperatures and is dictated by Tjmax (maximum junction temperature), ThetaJA (package junction to ambient thermal resistance), and TA (ambient temperature). The maximum allowable power dissipation at any temperature is Pdmax = (Tjmax - TA)/ThetaJA or the number given in the Absolute Maximum Ratings, whichever is lower. Note 4: Human body model, 1.5k Ohms in series with 100pF. Recommended Operating Conditions Supply Voltage Vcc = +15Vdc Operating Temperature Range -55 C < Ta < +125 C
Electrical Characteristics
(The following conditions apply to all the following parameters, unless otherwise specified.) DC: +Vcc = +15V, Vcm = 0V SYMBOL PARAMETER CONDITIONS NOTES PIN- NAME MIN MAX UNIT SUB- GROUPS Vio Input Offset Voltage Vin = 0V, Rs = 50 Ohms mV mV 2, 3 +Vcc = 29.5V, -Vcc = -0.5V, Vin = 0V, Vcm = -14.5V, Rs = 50 Ohms mV mV 2, 3 +Vcc = 2V, -Vcc = -28V, Vin = 0V, Vcm = +13V, Rs = 50 Ohms mV mV 2, 3 +Vcc = +2.5V, -Vcc = -2.5V, Vin = 0V, Rs = 50 Ohms mV mV 2, 3 Vio(R) Raised Input Offset Voltage Vin = 0V, Rs = 50 Ohms mV -4.5 +4.5 mV 2, 3 +Vcc = 29.5V, -Vcc = -0.5V, Vin = 0V, Vcm = -14.5V, Rs = 50 Ohms mV -4.5 +4.5 mV 2, 3 +Vcc = 2V, -Vcc = -28V, Vin = 0V, Vcm = +13V, Rs = 50 Ohms mV -4.5 +4.5 mV 2, 3 Iio Input Offset Current Vin = 0V, Rs = 50K Ohms -10 +10 nA 1, 2 -20 +20 nA +Vcc = 29.5V, -Vcc = -0.5V, Vin = 0V, Vcm = -14.5V, Rs = 50K Ohms -10 +10 nA 1, 2 -20 +20 nA +Vcc = 2V, -Vcc = -28V, Vin = 0V, Vcm = +13V, Rs = 50K Ohms -10 +10 nA 1, 2 -20 +20 nA Iio(R) Raised Input Offset Current Vin = 0V, Rs = 50K Ohms -25 +25 nA 1, 2 -50 +50 nA Iib+ Input Bias Current Vin = 0V, Rs = 50K Ohms -100 0.1 nA 1, 2 -150 0.1 nA +Vcc = 29.5V, -Vcc = -0.5V, Vin = 0V, Vcm = -14.5V, Rs = 50K Ohms -150 0.1 nA 1, 2 -200 0.1 nA +Vcc = 2V, -Vcc = -28V, Vin = 0V, Vcm = +13V, Rs = 50K Ohms -150 0.1 nA 1, 2 -200 0.1 nA
DC PARAMETERS(Continued) (The following conditions apply to all the following parameters, unless otherwise specified.) DC: +Vcc = +15V, Vcm = 0V SYMBOL PARAMETER CONDITIONS NOTES PIN- NAME MIN MAX UNIT SUB- GROUPS Iib- Input Bias Current Vin = 0V, Rs = 50K Ohms -100 0.1 nA 1, 2 -150 0.1 nA +Vcc = 29.5V, -Vcc = -0.5V, Vin = 0V, Vcm = -14.5V, Rs = 50K Ohms -150 0.1 nA 1, 2 -200 0.1 nA +Vcc = 2V, -Vcc = -28V, Vin = 0V, Vcm = +13V, Rs = 50K Ohms -150 0.1 nA 1, 2 -200 0.1 nA Vo(STB) Collector Output Voltage (ST) Vin+ = Gnd, Vin- = 15V, Istb = -3mA, Rs = 50 Ohms V 1, 2, CMR Common Mode Rejection -28V<-Vcc<-0.5V, Rs=50 Ohms, 2V<+Vcc<29.5V, Rs=50 Ohms, -14.5V<Vcm<13V,Rs=50 Ohms dB 1, 2, Vol Low Level Output Voltage +Vcc = 4.5V, -Vcc = Gnd, Iout = 8mA, +Vin = 0.71V, Vid = -6mV 0.4 V 1, 2, +Vcc = 4.5V, -Vcc = Gnd, Iout = 8mA, +Vin = -1.75V, Vid = -6mV 0.4 V 1, 2, Iout = 50mA, +Vin = 13V, Vid = -5mV 1.5 V 1, 2, Iout = 50mA, +Vin = -14V, Vid = -5mV 1.5 V 1, 2, Icex Output Leakage Current +Vcc = 18V, -Vcc = -18V, Vout = 32V nA 500 nA Ii Input Leakage Current +Vcc = 18V, -Vcc = -18V, +Vin = +12V, -Vin = -17V 500 nA 1, 2, +Vcc = 18V, -Vcc = -18V, +Vin = -17V, -Vin = +12V 500 nA 1, 2, Icc+ Power Supply Current mA 1, 2 mA Icc- Power Supply Current mA 1, 2 mA Delta Vio/Delta T Temperature Coefficient Input Offset Voltage
25 C < T < 125 C
-25 uV/ C 2 -55 C < T < 25 C -25 uV/ C 3 Delta Iio/Delta T Temperature Coefficient Input Offset Current -100 100 pA/ C 2 -55 C < T < 25 C -200 200 pA/ C 3
DC PARAMETERS(Continued) (The following conditions apply to all the following parameters, unless otherwise specified.) DC: +Vcc = +15V, Vcm = 0V SYMBOL PARAMETER CONDITIONS NOTES PIN- NAME MIN MAX UNIT SUB- GROUPS Ios Short Circuit Current Vout = 5V, t < 10mS, Vin- = 0.1V, Vin+ = 0V 3, 5 200 mA 3, 5 150 mA 3, 5 250 mA Vio(adj)+ Input Offset Voltage (Adjustment) Vout = 0V, Vin = 0V, Rs = 50 Ohms mV Vio(adj)- Input Offset Voltage (Adjustment) Vout = 0V, Vin = 0V, Rs = 50 Ohms mV Ave+ Voltage Gain (Emitter) Rl = 600 Ohms 3, 6 V/mV 3, 6 V/mV 5, 6 Ave- Voltage Gain (Emitter) Rl = 600 Ohms 3, 6 V/mV 3, 6 V/mV 5, 6 AC PARAMETERS (The following conditions apply to all the following parameters, unless otherwise specified.) AC: +Vcc = +15V, Vcm = 0 trLHC Response Time (Collector Output) Vod(Overdrive) = -5mV, Cl = 50pF, Vin = -100mV 4, 8 300 nS 7, 8B 4, 8 640 nS trHLC Response Time (Collector Output) Vod(Overdrive) = 5mV, Cl = 50pF, Vin = 100mV 4, 8 300 nS 7, 8B 4, 8 500 nS Note 1: Istb = -2mA at -55 C. Note 2: Calculated parameter. Note 3: Use DC tape for Ios and Vio(adj), Ave+ and Ave- as indicated in TAPE NAME section of this JRETS. Note 4: Uses AC tape and hardware. Note 5: Actual min. limit used is 5mA due to test setup. Note 6: Datalog reading in K = V/mV. Note 7: Vid is voltage difference between inputs. Note 8: Group A sample ONLY
GRAPHICS#
DESCRIPTION
METAL CAN (H), TO-99, 8LD .200 DIA P.C. (B/I CKT) 05174HRC2 CERPACK (W), 10 LEAD (B/I CKT) 05284HRC2 METAL CAN (H), TO-99, 3LD .200 DIA P.C. (B/I CKT) 05445HRC1 CERDIP (J), 8 LEAD (B/I CKT) 05652HRA2 CERDIP (J), 8 LEAD (B/I CKT) 05815HRA3 LCC (E), TYPE C, 20 TERMINAL (B/I CKT) 09569HRC2 CERPACK (W), 10 LEAD (B/I CKT) E20ARE LCC (E), TYPE C, 20 TERMINAL(P/P DWG) H08CRF METAL CAN (H), TO-99, 8LD, .200 DIA P.C. (P/P DWG) J08ARL CERDIP (J), 8 LEAD (P/P DWG) P000264A METAL CAN (H), 8 LEAD (PINOUT) P000265A CERDIP (J), 8 LEAD (PINOUT) P000314B LCC (E), 20 LEAD (PINOUT) P000373A CERAMIC SOIC (WG), 10 LEAD (PINOUT) WG10ARC CERAMIC SOIC (WG), 10 LEAD (P/P DWG) See attached graphics following this page.
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N MIL/AEROSPACE OPERATIONS
2900 SEMICONDUCTOR DRIVE
SANTA CLARA, CA 95050 4 18 8 14 9 10 11 12 13 3 2 1 20 19 N/C N/C N/C IN+ GND N/C N/C N/C OUTPUT N/C BALANCE/ N/C BALANCE N/C N/C IN- N/C LM111E 20 - LEAD LCC CONNECTION DIAGRAM TOP VIEW P000314B N/C STROBE
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Revision History
ECN # Rel Date Originator Changes 0A0 M0003786 04/20/01 Rose Malone Initial MDS Release: MDLM111-X, Rev. 0A0 0B0 M0003794 04/20/01 Rose Malone Update MDS: MDLM111-X, Rev. 0A0 to MDLM111-X, Rev. 0B0. Added Note 8 to DC and AC Electrical Sections for the following parameters Delta Vio/Delta T, Delta Iio/Delta T, trLHC and trHLC