LM111-MDE

LM111QML_16 TI1 | Alldatasheet

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www.ti.com SNOSAJ4C –OCTOBER 2005–REVISED MARCH 2013 LM111QMLVoltageComparator Check forSamples: LM111QML 1FEATURES DESCRIPTION The LM111 isa voltagecomparatorthathas input 2• Availablewithradiationensured currentsnearlya thousandtimeslowerthandevices– High Dose Rate 50 krad(Si) such as theLM106 or LM710. Itisalsodesignedto – Low Dose and ELDRS Free 100 krad(Si) operateover a widerrange of supplyvoltages:from standard±15V op amp suppliesdown to the single• Operates from single5V supply 5V supplyused forIC logic.The outputiscompatible• Inputcurrent:200 nA max. over temperature withRTL, DTL and TTL as wellas MOS circuits.

• Offsetcurrent:20 nA max. over temperature Further,it can drive lamps or relays,switching voltagesup to50V atcurrentsas highas 50 mA.• Differentialinputvoltagerange:±30V
• Power consumption: 135 mW at±15V Both theinputsand theoutputoftheLM111 can be isolatedfrom system ground, and the outputcan• Power supply voltage,single5V to±15V driveloadsreferredtoground,thepositivesupplyor• Offsetvoltagenullcapability the negativesupply.Offsetbalancingand strobe
• Strobecapability capabilityare providedand outputscan be wire OR'ed. Althoughslowerthan the LM106 and LM710 (200 ns responsetimevs 40 ns) the deviceisalso much lessprone tospuriousoscillations.The LM111 has the same pin configurationas the LM106 and LM710. Connection Diagrams Note:Pin4 connectedtocase Figure1. Top View Pleasebe aware thatan importantnoticeconcerningavailability,standardwarranty,and use incriticalapplicationsof Texas Instrumentssemiconductorproductsand disclaimerstheretoappearsattheend ofthisdatasheet. 2Alltrademarksarethepropertyoftheirrespectiveowners. PRODUCTION DATA informationiscurrentas ofpublicationdate. Copyright© 2005–2013,Texas InstrumentsIncorporatedProductsconform to specificationsper the terms of the Texas Instrumentsstandardwarranty.Productionprocessingdoes not necessarilyincludetestingofallparameters.

SNOSAJ4C –OCTOBER 2005–REVISED MARCH 2013 www.ti.com Figure2.Top View Figure3.Top View Figure4. Top View Figure5.Top View

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www.ti.com SNOSAJ4C –OCTOBER 2005–REVISED MARCH 2013 Schematic Diagram Pinconnectionsshown on schematicdiagramareforLMC0008C package. Figure6. These deviceshave limitedbuilt-inESD protection.The leadsshouldbe shortedtogetherorthedeviceplacedinconductivefoam duringstorageorhandlingtopreventelectrostaticdamage totheMOS gates. Copyright© 2005–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 3 ProductFolderLinks:LM111QML

SNOSAJ4C –OCTOBER 2005–REVISED MARCH 2013 www.ti.com AbsoluteMaximum Ratings (1) PositiveSupplyVoltage +30.0V NegativeSupplyVoltage -30.0V TotalSupplyVoltage 36V OutputtoNegativeSupplyVoltage 50V GND toNegativeSupplyVoltage 30V DifferentialInputVoltage ±30V SinkCurrent 50mA InputVoltage (2) ±15V Power Dissipation (3)

8 LD CDIP 400mW at25°C

8 LD TO-99 330mW at25°C

10 LD CLGA 330mW at25°C

20 LD LCCC 500mW at25°C

OutputShortCircuitDuration 10 seconds Maximum StrobeCurrent 10mA OperatingTemperatureRange -55°C ≤ TA ≤ 125°C ThermalResistance θJA 8 LD CDIP (StillAirat0.5W) 134°C/W 8 LD CDIP (500LF/MinAirflowat0.5W) 76°C/W 8 LD TO-99 (StillAirat0.5W) 162°C/W 8 LD TO-99 (500LF/MinAirflowat0.5W) 92°C/W 10 LD CLGA (StillAirat0.5W) 231°C/W 10 LD CLGA (500LF/MinAirflowat0.5W) 153°C/W 10 LD CLGA (StillAirat0.5W) 231°C/W 10 LD CLGA (500LF/MinAirflowat0.5W) 153°C/W 14 LD CDIP(StillAirat0.5W) 97°C/W 14 LD CDIP (500LF/MinAirflowat0.5W) 65°C/W 20 LD LCCC (StillAirat0.5W) 90°C/W 20 LD LCCC (500LF/MinAirflowat0.5W) 65°C/W θJC

8 LD CDIP 21°C/W

8 LD TO-99 50°C/W

10 LD CLGA 24°C/W

14 LD CDIP 20°C/W

20 LD LCCC 21°C/W

(1) AbsoluteMaximum Ratingsindicatelimitsbeyond whichdamage tothedevicemay occur.OperatingRatingsindicateconditionsfor whichthedeviceisfunctional,butdo notensurespecificperformancelimits.Forspecificationsand testconditions,see theElectrical Characteristicstables.The specificationsapplyonlyforthetestconditionslisted.Some performancecharacteristicsmay degradewhen thedeviceisnotoperatedunderthelistedtestconditions. (2) Thisratingappliesfor±15V supplies.The positiveinputvoltagelimitsis30 V above thenegativesupply.The negativeinputvoltage limitsisequaltothenegativesupplyvoltageor30V belowthepositivesupply,whicheverisless. (3) The maximum power dissipationmust be deratedatelevatedtemperaturesand isdictatedby TJmax (maximum junctiontemperature), θJA (packagejunctiontoambientthermalresistance),and TA (ambienttemperature).The maximum allowablepower dissipationatany temperatureisPDmax = (TJmax -TA)/θJA orthenumber givenintheAbsoluteMaximum Ratings,whicheverislower.

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www.ti.com SNOSAJ4C –OCTOBER 2005–REVISED MARCH 2013 AbsoluteMaximum Ratings(1)(continued) StorageTemperatureRange -65°C ≤ TA ≤ 150°C Maximum JunctionTemperature 175°C Lead Temperature(Soldering,60 seconds) 300°C VoltageatStrobePin V+ = -5V Package Weight(Typical)

8 LD TO-99 965mg

8 LD CDIP 1100mg

10 LD CLGA 250mg

10 LD CLGA 225mg

14 LD CDIP TBD

20 LD LCCC TBD

ESD Rating (4) 300V (4) Human body model,1.5kΩ inserieswith100 pF. Recommended OperatingConditions SupplyVoltage VCC = ±15VDC OperatingTemperatureRange -55°C ≤ TA ≤ 125°C QualityConformance Inspection Table1.Mil-Std-883,Method 5005 -Group A Subgroup Description Temperature (°C)

1 Statictestsat +25

2 Statictestsat +125

3 Statictestsat -55

4 Dynamic testsat +25

5 Dynamic testsat +125

6 Dynamic testsat -55

7 Functionaltestsat +25

9 Switchingtestsat +25

10 Switchingtestsat +125

11 Switchingtestsat -55

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SNOSAJ4C –OCTOBER 2005–REVISED MARCH 2013 www.ti.com LM111/883 ElectricalCharacteristicsDC Parameters(1) The followingconditionsapply,unlessotherwisespecified.V56 = 0,R S = 0 Ω,VCC = ±15V,VCM = 0,VO = 1.4VWRT −VCC The pinassignmentsarebased on the8 pinpackage configuration.(2) Sub-Symbol Parameter Conditions Notes Min Max Unit groups IIO InputOffsetCurrent VCM = 13.5V,R S = 50KΩ -10 10 nA 1 -20 20 nA 2,3 VCM = 13.5V,V85 = V86 = 0V,R S = (2) -30 30 nA 150KΩ VCM = -14.5V,R S= 50KΩ -10 10 nA 1 -20 20 nA 2,3 VCM = -14.5V,V85 = V86 = 0V,R S= (2) -30 30 nA 150KΩ R S = 50KΩ -10 10 nA 1 -20 20 nA 2,3 V85 = V86 = 0V,R S = 50KΩ (2) -30 30 nA 1 IIB InputBiasCurrent VCM = 13.5V,R S = 50KΩ 100 nA 1 150 nA 2,3 VCM = -14.5V,R S = 50KΩ 100 nA 1 150 nA 2,3 R S = 50KΩ 100 nA 1 150 nA 2,3 IOL OutputLeakage Current VCC = ± 18V,I5 + I6 = 5mA, (2) 10 nA 1 VO = 35V WRT -VCC (2) 500 nA 2,3 IGL Ground Leakage Current VCC = ± 18V,I5 + I6 = 5mA, (2) 25 nA 1 VO = 50V WRT -VCC (2) 500 nA 2 VSat SaturationVoltage VI= -5mV, I7 = 50mA (2) 1.5 V 1,2,3 -ICC NegativeSupplyCurrent 5.0 mA 1,2 15 mA 3 +ICC PositiveSupplyCurrent 6.0 mA 1,2 15 mA 3 IL1 InputLeakage Current VCC = ± 18V,V28 = 1V, (2) 10 nA 1 V38 = 30V,I5 + I6 = 5mA (2) 30 nA 2VO = 50V WRT -VCC IL2 InputLeakage Current VCC = ± 18V,V38 = 1V, (2) 10 nA 1 V28 = 30V,I5 + I6 = 5mA (2) 30 nA 2VO = 50V WRT -VCC VO St CollectorOutputVoltage(Strobe) 14 V 1 ISt = 3mA 14 V 1 (1) Calculatedparameter. (2) Pinnames based on an 8 pinpackage configuration.When usinghigherpincountpackagesthen:Pin2 & 3 areInputs,Pin5 is Balance,Pin6 isBalance/Strobe,Pin7 isOutput,and Pin8 isV+.Forexample:V56 istheVoltagebetween theBalanceand Balance/ Strobepins.

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www.ti.com SNOSAJ4C –OCTOBER 2005–REVISED MARCH 2013 LM111/883 ElectricalCharacteristicsDC Parameters(1)(continued) The followingconditionsapply,unlessotherwisespecified.V56 = 0,R S = 0 Ω,VCC = ±15V,VCM = 0,VO = 1.4VWRT −VCC The pinassignmentsarebased on the8 pinpackage configuration.(2) Sub-Symbol Parameter Conditions Notes Min Max Unit groups VIO InputOffsetVoltage VCM = 13.5V -3.0 3.0 mV 1 -4.0 4.0 mV 2,3 VCM = 13.5V,V85 = V86= 0V (2) -3.0 3.0 mV 1 VCM = -14.5V -3.0 3.0 mV 1 -4.0 4.0 mV 2,3 VCM = -14.5V,V85 = V86 = 0V (2) -3.0 3.0 mV 1 -3.0 3.0 mV 1 -4.0 4.0 mV 2,3 V85 = V86 = 0V (2) -3.0 3.0 mV 1 VO = 0.4V,+VCC = 4.5V, -5.0 5.0 mV 1 -VCC = 0V,VCM = 3V -6.0 6.0 mV 2,3 VO = 4.5V,+VCC = 4.5V, -3.0 3.0 mV 1 -VCC = 0V,VCM = 3V -4.0 4.0 mV 2,3 VO = 0.4V,+VCC = 4.5V, -5.0 5.0 mV 1 -VCC = 0V,VCM = 0.5V -6.0 6.0 mV 2,3 VO = 4.5V,+VCC = 4.5V, -3.0 3.0 mV 1 -VCC = 0V,VCM = 0.5V -4.0 4.0 mV 2,3 AVS LargeSignalGain -12V ≤ VO ≤ 35V,R L = 1KΩ (3) 40 V/mV 4 (3) 30 V/mV 5,6 (3) DatalogreadinginK=V/mV. LM111/883 ElectricalCharacteristicsAC Parameters(1) The followingconditionsapply,unlessotherwisespecified.V56 = 0,R S = 0 Ω,VCC = ±15V,VCM = 0,VO = 1.4VWRT −VCC The pinassignmentsarebased on the8 pinpackage configuration.(2) Notes Min Max Unit Sub-Symbol Parameter Conditions groups tR Response Time 400 nS 7 (1) Calculatedparameter. (2) Pinnames based on an 8 pinpackage configuration.When usinghigherpincountpackagesthen:Pin2 & 3 areInputs,Pin5 is Balance,Pin6 isBalance/Strobe,Pin7 isOutput,and Pin8 isV+.Forexample:V56 istheVoltagebetween theBalanceand Balance/ Strobepins. LM111-SMD ElectricalCharacteristicsSMD 5962-8687701DC Parameters(1) The followingconditionsapply,unlessotherwisespecified.VCC = ±15V,VCM = 0 Sub-Symbol Parameter Conditions Notes Min Max Unit groups VIO InputOffsetVoltage VI= 0V,R S = 50Ω -3.0 +3.0 mV 1 -4.0 +4.0 mV 2,3 VI= 0V,VCM = -14.5V, -4.0 +4.0 mV 2,3R S = 50Ω +VCC = 2V,-VCC = -28V, -3.0 +3.0 mV 1 VI= 0V,VCM = +13V, -4.0 +4.0 mV 2,3R S = 50Ω VI= 0V, -4.0 +4.0 mV 2,3R S = 50Ω (1) Calculatedparameter. Copyright© 2005–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 7 ProductFolderLinks:LM111QML

SNOSAJ4C –OCTOBER 2005–REVISED MARCH 2013 www.ti.com LM111-SMD ElectricalCharacteristicsSMD 5962-8687701DC Parameters(1)(continued) The followingconditionsapply,unlessotherwisespecified.VCC = ±15V,VCM = 0 Sub-Symbol Parameter Conditions Notes Min Max Unit groups VIO R RaisedInputOffsetVoltage VI= 0V,R S = 50Ω -3.0 +3.0 mV 1(2) -4.5 +4.5 mV 2,3 +VCC = 29.5V,-VCC = -0.5V, -3 +3 mV 1 VI= 0V,VCM = -14.5V, (2) -4.5 +4.5 mV 2,3R S = 50Ω +VCC = 2V,-VCC = -28V, -3.0 +3.0 mV 1(2) VI= 0V,VCM = +13V, R S = 50Ω -4.5 +4.5 mV 2,3 IIO InputOffsetCurrent VI= 0V,R S = 50KΩ -10 +10 nA 1,2 -20 +20 nA 3 VI= 0V,VCM = -14.5V, -20 +20 nA 3R S = 50KΩ +VCC = 2V,-VCC = -28V, -10 +10 nA 1,2 VI= 0V,VCM = +13V, -20 +20 nA 3R S = 50KΩ IIOR RaisedInputOffsetCurrent VI= 0V,R S = 50KΩ -25 +25 nA 1,2(2) -50 +50 nA 3 ±IIB InputBiasCurrent VI= 0V,R S = 50KΩ -100 0.1 nA 1,2 -150 0.1 nA 3 VI= 0V,VCM = -14.5V, -200 0.1 nA 3R S = 50KΩ +VCC = 2V,-VCC = -28V, -150 0.1 nA 1,2 VI= 0V,VCM = +13V, -200 0.1 nA 3R S = 50KΩ VO St CollectorOutputVoltage(Strobe) +VI= Gnd, -VI= 15V, (3)(4) V 1,2,3ISt = -3mA, R S = 50Ω 14 CMRR Common Mode RejectionRatio -28V ≤ -VCC ≤ -0.5V,R S = 50Ω,2V ≤ VCM ≤ 13V,R S = 50Ω VOL Low LevelOutputVoltage +VCC = 4.5V,-VCC = Gnd, VID = -6mV +VCC = 4.5V,-VCC = Gnd, VID = -6mV IO = 50mA, ±VI= 13V, 1.5 V 1,2,3VID = -5mV IO = 50mA, ±Vl= -14V, 1.5 V 1,2,3VID = -5mV ICEX OutputLeakage Current +VCC = 18V,-VCC = -18V, -1.0 10 nA 1 VO = 32V -1.0 500 nA 2 IL InputLeakage Current +VCC = 18V,-VCC = -18V, (5) -5.0 500 nA 1,2,3+VI= +12V, -VI= -17V +VCC = 18V,-VCC = -18V, (5) -5.0 500 nA 1,2,3+VI= -17V,-VI= +12V +ICC Power SupplyCurrent 6.0 mA 1,2 7.0 mA 3 (2) Subscript(R)indicatestestswhichareperformedwithinputstagecurrentraisedby connectingBAL and BAL/STB terminalsto+VCC . (3) IST = −2mA at−55°C (4) Group A sample ONLY (5) VID isvoltagedifferencebetween inputs.

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www.ti.com SNOSAJ4C –OCTOBER 2005–REVISED MARCH 2013 LM111-SMD ElectricalCharacteristicsSMD 5962-8687701DC Parameters(1)(continued) The followingconditionsapply,unlessotherwisespecified.VCC = ±15V,VCM = 0 Sub-Symbol Parameter Conditions Notes Min Max Unit groups -ICC Power SupplyCurrent -5.0 mA 1,2 -6.0 mA 3 Δ VIO /ΔT TemperatureCoefficientInput 25°C ≤ T ≤ 125°C (5)(4) -25 25 µV/°C 2 OffsetVoltage -55°C ≤ T ≤ 25°C (5)(4) -25 25 µV/°C 3 Δ IIO /ΔT TemperatureCoefficientInput 25°C ≤ T ≤ 125°C (5)(4) -100 100 pA/°C 2 OffsetCurrent -55°C ≤ T ≤ 25°C (5)(4) -200 200 pA/°C 3 IOS ShortCircuitCurrent VO = 5V,t≤ 10mS, -VI= 0.1V,+VI (6) 200 mA 1 = 0V (6) 150 mA 2 (6) 250 mA 3 +VIO adj. InputOffsetVoltage(Adjustment) VO = 0V,VI= 0V,R S = 50Ω 5.0 mV 1 -VIO adj. InputOffsetVoltage(Adjustment) VO = 0V,VI= 0V,R S = 50Ω -5.0 mV 1 ±AVE VoltageGain (Emitter) R L = 600Ω (7) 10 V/mV 4 (7) 8.0 V/mV 5,6 (6) Actualmin.limitused is5mA due totestsetup. (7) DatalogreadinginK=V/mV. LM111-SMD ElectricalCharacteristicsSMD 5962-8687701AC Parameters(1) The followingconditionsapply,unlessotherwisespecified.VCC = ±15V,VCM = 0 Sub-Symbol Parameter Conditions Notes Min Max Unit groups tRLHC Response Time (CollectorOutput) VOD (Overdrive)= -5mV, (2) 300 nS 7,8B C L = 50pF,VI= -100mV (2) 640 nS 8A tRHLC Response Time (CollectorOutput) VOD (Overdrive)= 5mV, (2) 300 nS 7,8B C L = 50pF,VI= 100mV (2) 500 nS 8A (1) Calculatedparameter. (2) Group A sample ONLY LM111 RADIATION ElectricalCharacteristicsSMD 5962L0052401 DC Parameters(1)(2) The followingconditionsapply,unlessotherwisespecified.VCC = ±15V,VCM = 0 Sub-Symbol Parameter Conditions Notes Min Max Unit groups VIO InputOffsetVoltage VI= 0V,R S = 50Ω -3.0 +3.0 mV 1 -4.0 +4.0 mV 2,3 VI= 0V,VCM = -14.5V, -4.0 +4.0 mV 2,3R S = 50Ω +VCC = 2V,-VCC = -28V, -3.0 +3.0 mV 1 VI= 0V,VCM = +13V, -4.0 +4.0 mV 2,3R S = 50Ω VI= 0V,R S = 50Ω -4.0 +4.0 mV 2,3 (1) Calculatedparameter. (2) Pre and postirradiationlimitsareidenticaltothoselistedunderAC and DC electricalcharacteristicsexceptas listedinthePost RadiationLimitsTable.These partsmay be dose ratesensitiveina space environmentand demonstrateenhanced lowdose rateeffect. Radiationend pointlimitsforthenotedparametersareensuredonlyfortheconditionsas specifiedinMil-Std-883,Method 1019, ConditionA. Copyright© 2005–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 9 ProductFolderLinks:LM111QML

SNOSAJ4C –OCTOBER 2005–REVISED MARCH 2013 www.ti.com LM111 RADIATION ElectricalCharacteristicsSMD 5962L0052401 DC Parameters(1)(2)(continued) The followingconditionsapply,unlessotherwisespecified.VCC = ±15V,VCM = 0 Sub-Symbol Parameter Conditions Notes Min Max Unit groups VIO R RaisedInputOffsetVoltage VI= 0V,R S = 50Ω -3.0 +3.0 mV 1(3) -4.5 +4.5 mV 2,3 VI= 0V,VCM = -14.5V, (3) -4.5 +4.5 mV 2,3R S = 50Ω +VCC = 2V,-VCC = -28V, -3.0 +3.0 mV 1 VI= 0V,VCM = +13V, (3) -4.5 +4.5 mV 2,3R S = 50Ω IIO InputOffsetCurrent VI= 0V,R S = 50KΩ -10 +10 nA 1,2 -20 +20 nA 3 VI= 0V,VCM = -14.5V, -20 +20 nA 3R S = 50KΩ +VCC = 2V,-VCC = -28V, -10 +10 nA 1,2 VI= 0V,VCM = +13V, -20 +20 nA 3R S = 50KΩ IIOR RaisedInputOffsetCurrent VI= 0V,R S = 50KΩ -25 +25 nA 1,2(3) -50 +50 nA 3 ±IIB InputBiasCurrent VI= 0V,R S = 50KΩ -100 0.1 nA 1,2 -150 0.1 nA 3 VI= 0V,VCM = -14.5V, -200 0.1 nA 3R S = 50KΩ +VCC = 2V,-VCC = -28V, -150 0.1 nA 1,2 VI= 0V,VCM = +13V, -200 0.1 nA 3R S = 50KΩ VO St CollectorOutputVoltage(Strobe) +VI= Gnd, -VI= 15V, (4)(5) V 1,2,3ISt = -3mA, R S = 50Ω 14 CMRR Common Mode RejectionRatio -28V ≤ -VCC ≤ -0.5V,R S = 50Ω,2V ≤ VCM ≤ 13V,R S = 50Ω VOL Low LevelOutputVoltage +VCC = 4.5V,-VCC = Gnd, IO = 8mA, ±VI= 0.5V, 0.4 V 1,2,3 VID = -6mV +VCC = 4.5V,-VCC = Gnd, IO = 8mA, ±VI= 3V, 0.4 V 1,2,3 VID = -6mV IO = 50mA, ±VI= 13V, 1.5 V 1,2,3VID = -5mV IO = 50mA, ±VI= -14V, 1.5 V 1,2,3VID = -5mV ICEX OutputLeakage Current +VCC = 18V,-VCC = -18V, -1.0 10 nA 1 VO = 32V -1.0 500 nA 2 IL InputLeakage Current +VCC = 18V,-VCC = -18V, (6) -5.0 500 nA 1,2,3+VI= +12V, -VI= -17V +VCC = 18V,-VCC = -18V, (6) -5.0 500 nA 1,2,3+VI= -17V,-VI= +12V +ICC Power SupplyCurrent 6.0 mA 1,2 7.0 mA 3 (3) Subscript(R)indicatestestswhichareperformedwithinputstagecurrentraisedby connectingBAL and BAL/STB terminalsto+VCC . (4) IST = −2mA at−55°C (5) Group A sample ONLY (6) VID isvoltagedifferencebetween inputs.

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www.ti.com SNOSAJ4C –OCTOBER 2005–REVISED MARCH 2013 LM111 RADIATION ElectricalCharacteristicsSMD 5962L0052401 DC Parameters(1)(2)(continued) The followingconditionsapply,unlessotherwisespecified.VCC = ±15V,VCM = 0 Sub-Symbol Parameter Conditions Notes Min Max Unit groups -ICC Power SupplyCurrent -5.0 mA 1,2 -6.0 mA 3 ΔVIO /ΔT TemperatureCoefficientInput 25°C ≤ T ≤ 125°C -25 25 µV/°C 2 OffsetVoltage -55°C ≤ T ≤ 25°C -25 25 µV/°C 3 Δ IIO /ΔT TemperatureCoefficientInput 25°C ≤ T ≤ 125°C -100 100 pA/°C 2 OffsetCurrent -55°C ≤ T ≤ 25°C -200 200 pA/°C 3 IOS ShortCircuitCurrent VO = 5V,t≤ 10mS, -VI= 0.1V,+VI (7) 200 mA 1 = 0V (7) 150 mA 2 (7) 250 mA 3 +VIO adj. InputOffsetVoltage(Adjustment) VO = 0V,VI= 0V,R S = 50Ω 5.0 mV 1 -VIO adj. InputOffsetVoltage(Adjustment) VO = 0V,VI= 0V,R S = 50Ω -5.0 mV 1 ±AVE VoltageGain (Emitter) R L = 600Ω (8) 10 V/mV 4 (8) 8.0 V/mV 5,6 (7) Actualmin.limitused is5mA due totestsetup. (8) DatalogreadinginK=V/mV. LM111 RADIATION ElectricalCharacteristicsSMD 5962L0052401 AC Parameters(1)(2) The followingconditionsapply,unlessotherwisespecified.VCC = ±15V,VCM = 0 Sub-Symbol Parameter Conditions Notes Min Max Unit groups tRLHC Response Time (CollectorOutput) VOD (Overdrive)= -5mV, 300 nS 7,8B(3) C L = 50pF,VI= -100mV 640 nS 8A tRHLC Response Time (CollectorOutput) VOD (Overdrive)= 5mV, 300 nS 7,8B(3) C L = 50pF,VI= 100mV 500 nS 8A (1) Calculatedparameter. (2) Pre and postirradiationlimitsareidenticaltothoselistedunderAC and DC electricalcharacteristicsexceptas listedinthePost RadiationLimitsTable.These partsmay be dose ratesensitiveina space environmentand demonstrateenhanced lowdose rateeffect. Radiationend pointlimitsforthenotedparametersareensuredonlyfortheconditionsas specifiedinMil-Std-883,Method 1019, ConditionA. (3) Group A sample ONLY LM111 RADIATION ElectricalCharacteristicsSMD 5962L0052401 DC DELTA Parameters(1)(2) The followingconditionsapply,unlessotherwisespecified.VCC = ±15V,VCM = 0 Deltacalculationsperformedon QMLV devicesatgroupB ,subgroup5. Sub-Symbol Parameter Conditions Notes Min Max Unit groups VIO InputOffsetVoltage VI= 0V,R S = 50Ω -0.5 0.5 mV 1 +VCC = 29.5V,-VCC = -0.5V, VI= 0V,VCM = -14.5V, -0.5 0.5 mV 1 R S = 50Ω +VCC = 2V,-VCC = -28V, VI= 0V,VCM = +13V, -0.5 0.5 mV 1 R S = 50Ω (1) Calculatedparameter. (2) Pre and postirradiationlimitsareidenticaltothoselistedunderAC and DC electricalcharacteristicsexceptas listedinthePost RadiationLimitsTable.These partsmay be dose ratesensitiveina space environmentand demonstrateenhanced lowdose rateeffect. Radiationend pointlimitsforthenotedparametersareensuredonlyfortheconditionsas specifiedinMil-Std-883,Method 1019, ConditionA. Copyright© 2005–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 11 ProductFolderLinks:LM111QML

SNOSAJ4C –OCTOBER 2005–REVISED MARCH 2013 www.ti.com LM111 RADIATION ElectricalCharacteristicsSMD 5962L0052401 DC DELTA Parameters(1)(2)(continued) The followingconditionsapply,unlessotherwisespecified.VCC = ±15V,VCM = 0 Deltacalculationsperformedon QMLV devicesatgroupB ,subgroup5. Sub-Symbol Parameter Conditions Notes Min Max Unit groups ±IIB InputBiasCurrent VI= 0V,R S = 50KΩ -12.5 12.5 nA 1 +VCC = 29.5V,-VCC = -0.5V, VI= 0V,VCM = -14.5V, -12.5 12.5 nA 1 R S = 50KΩ +VCC = 2V,-VCC = -28V, VI= 0V,VCM = +13V, -12.5 12.5 nA 1 R S = 50KΩ ICEX OutputLeakage Current +VCC = 18V,-VCC = -18V, -5.0 5.0 nA 1VO = 32V LM111 RADIATION ElectricalCharacteristicsSMD 5962L0052401 Post RadiationParameters(1)(2) The followingconditionsapply,unlessotherwisespecified Sub-Symbol Parameter Conditions Notes Min Max Unit groups IIO InputOffsetCurrent +VCC = 29.5V,−VCC = −0.5V,VI= −50 +50 nA 1 0V,VCM = −14.5V, R S = 50KΩ +VCC = 2V,−VCC = −28V, −50 +50 nA 1 VI= 0V,VCM = +13V, R S = 50KΩ ±IIB InputBiasCurrent VI= 0V,R S = 50KΩ −150 0.1 nA 1 +VCC = 29.5V,−VCC = −0.5V,VI= −175 0.1 nA 1 0V,VCM = −14.5V, R S = 50KΩ ICEX OutputLeakage Current +VCC = 18V,−VCC = −18V, −25 +25 nA 1 VO = 32V (1) Calculatedparameter. (2) Pre and postirradiationlimitsareidenticaltothoselistedunderAC and DC electricalcharacteristicsexceptas listedinthePost RadiationLimitsTable.These partsmay be dose ratesensitiveina space environmentand demonstrateenhanced lowdose rateeffect. Radiationend pointlimitsforthenotedparametersareensuredonlyfortheconditionsas specifiedinMil-Std-883,Method 1019, ConditionA. LM111 RADIATION ElectricalCharacteristicsSMD 5962R0052402 DC Parameters(1)(2) The followingconditionsapply,unlessotherwisespecified.VCC = ±15V,VCM = 0 Sub-Symbol Parameter Conditions Notes Min Max Unit groups VIO InputOffsetVoltage VI= 0V,R S = 50Ω -3.0 +3.0 mV 1 -4.0 +4.0 mV 2,3 VI= 0V,VCM = -14.5V, -4.0 +4.0 mV 2,3R S = 50Ω +VCC = 2V,-VCC = -28V, -3.0 +3.0 mV 1 VI= 0V,VCM = +13V, -4.0 +4.0 mV 2,3R S = 50Ω VI= 0V,R S = 50Ω -4.0 +4.0 mV 2,3 (1) Calculatedparameter. (2) Pre and postirradiationlimitsareidenticaltothoselistedunderAC and DC electricalcharacteristicsexceptas listedinthePost RadiationLimitsTable.These partsmay be sensitiveina highdose environment.Low dose ratetestinghas been performedon a wafer-by-waferbasis,pertestmethod 1019 conditionD ofMIL-STD-883,withno enhanced lowdose ratesensitivity(ELDRS) effect.

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www.ti.com SNOSAJ4C –OCTOBER 2005–REVISED MARCH 2013 LM111 RADIATION ElectricalCharacteristicsSMD 5962R0052402 DC Parameters(1)(2)(continued) The followingconditionsapply,unlessotherwisespecified.VCC = ±15V,VCM = 0 Sub-Symbol Parameter Conditions Notes Min Max Unit groups VIO R RaisedInputOffsetVoltage VI= 0V,R S = 50Ω -3.0 +3.0 mV 1(2) -4.5 +4.5 mV 2,3 VI= 0V,VCM = -14.5V, (2) -4.5 +4.5 mV 2,3R S = 50Ω +VCC = 2V,-VCC = -28V, -3.0 +3.0 mV 1 VI= 0V,VCM = +13V, (2) -4.5 +4.5 mV 2,3R S = 50Ω IIO InputOffsetCurrent VI= 0V,R S = 50KΩ -10 +10 nA 1,2 -20 +20 nA 3 VI= 0V,VCM = -14.5V, -20 +20 nA 3R S = 50KΩ +VCC = 2V,-VCC = -28V, -10 +10 nA 1,2 VI= 0V,VCM = +13V, -20 +20 nA 3R S = 50KΩ IIOR RaisedInputOffsetCurrent VI= 0V,R S = 50KΩ -25 +25 nA 1,2(2) -50 +50 nA 3 ±IIB InputBiasCurrent VI= 0V,R S = 50KΩ -100 0.1 nA 1,2 -150 0.1 nA 3 VI= 0V,VCM = -14.5V, -200 0.1 nA 3R S = 50KΩ +VCC = 2V,-VCC = -28V, -150 0.1 nA 1,2 VI= 0V,VCM = +13V, -200 0.1 nA 3R S = 50KΩ VO St CollectorOutputVoltage(Strobe) +VI= Gnd, -VI= 15V, (3)(4) V 1,2,3ISt = -3mA, R S = 50Ω 14 CMRR Common Mode RejectionRatio -28V ≤ -VCC ≤ -0.5V,R S = 50Ω,2V ≤ VCM ≤ 13V,R S = 50Ω VOL Low LevelOutputVoltage +VCC = 4.5V,-VCC = Gnd, IO = 8mA, ±VI= 0.5V, 0.4 V 1,2,3 VID = -6mV +VCC = 4.5V,-VCC = Gnd, IO = 8mA, ±VI= 3V, 0.4 V 1,2,3 VID = -6mV IO = 50mA, ±VI= 13V, 1.5 V 1,2,3VID = -5mV IO = 50mA, ±VI= -14V, 1.5 V 1,2,3VID = -5mV ICEX OutputLeakage Current +VCC = 18V,-VCC = -18V, -1.0 10 nA 1 VO = 32V -1.0 500 nA 2 IL InputLeakage Current +VCC = 18V,-VCC = -18V, (5) -5.0 500 nA 1,2,3+VI= +12V, -VI= -17V +VCC = 18V,-VCC = -18V, (5) -5.0 500 nA 1,2,3+VI= -17V,-VI= +12V +ICC Power SupplyCurrent 6.0 mA 1,2 7.0 mA 3 -ICC Power SupplyCurrent -5.0 mA 1,2 -6.0 mA 3 (3) IST = −2mA at−55°C (4) Group A sample ONLY (5) VID isvoltagedifferencebetween inputs. Copyright© 2005–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 13 ProductFolderLinks:LM111QML

SNOSAJ4C –OCTOBER 2005–REVISED MARCH 2013 www.ti.com LM111 RADIATION ElectricalCharacteristicsSMD 5962R0052402 DC Parameters(1)(2)(continued) The followingconditionsapply,unlessotherwisespecified.VCC = ±15V,VCM = 0 Sub-Symbol Parameter Conditions Notes Min Max Unit groups ΔVIO /ΔT TemperatureCoefficientInput 25°C ≤ T ≤ 125°C -25 25 µV/°C 2 OffsetVoltage -55°C ≤ T ≤ 25°C -25 25 µV/°C 3 Δ IIO /ΔT TemperatureCoefficientInput 25°C ≤ T ≤ 125°C -100 100 pA/°C 2 OffsetCurrent -55°C ≤ T ≤ 25°C -200 200 pA/°C 3 IOS ShortCircuitCurrent VO = 5V,t≤ 10mS, -VI= 0.1V,+VI (6) 200 mA 1 = 0V (5) 150 mA 2 (5) 250 mA 3 +VIO adj. InputOffsetVoltage(Adjustment) VO = 0V,VI= 0V,R S = 50Ω 5.0 mV 1 -VIO adj. InputOffsetVoltage(Adjustment) VO = 0V,VI= 0V,R S = 50Ω -5.0 mV 1 ±AVE VoltageGain (Emitter) R L = 600Ω (7) 10 V/mV 4 (7) 8.0 V/mV 5,6 (6) Actualmin.limitused is5mA due totestsetup. (7) Pinnames based on an 8 pinpackage configuration.When usinghigherpincountpackagesthen:Pin2 & 3 areInputs,Pin5 is Balance,Pin6 isBalance/Strobe,Pin7 isOutput,and Pin8 isV+.Forexample:V56 istheVoltagebetween theBalanceand Balance/ Strobepins. LM111 RADIATION ElectricalCharacteristicsSMD 5962R0052402 AC Parameters(1)(2) The followingconditionsapply,unlessotherwisespecified.VCC = ±15V,VCM = 0 Sub-Symbol Parameter Conditions Notes Min Max Unit groups tRLHC Response Time (CollectorOutput) VOD (Overdrive)= -5mV, 300 nS 7,8B(3) C L = 50pF,VI= -100mV 640 nS 8A tRHLC Response Time (CollectorOutput) VOD (Overdrive)= 5mV, 300 nS 7,8B(3) C L = 50pF,VI= 100mV 500 nS 8A (1) Calculatedparameter. (2) Pre and postirradiationlimitsareidenticaltothoselistedunderAC and DC electricalcharacteristicsexceptas listedinthePost RadiationLimitsTable.These partsmay be sensitiveina highdose environment.Low dose ratetestinghas been performedon a wafer-by-waferbasis,pertestmethod 1019 conditionD ofMIL-STD-883,withno enhanced lowdose ratesensitivity(ELDRS) effect. (3) Group A sample ONLY LM111 RADIATION ElectricalCharacteristicsSMD 5962R0052402 DC DELTA Parameters(1)(2) The followingconditionsapply,unlessotherwisespecified.VCC = ±15V,VCM = 0 Deltacalculationsperformedon QMLV devicesatgroupB ,subgroup5. Sub-Symbol Parameter Conditions Notes Min Max Unit groups VIO InputOffsetVoltage VI= 0V,R S = 50Ω -0.5 0.5 mV 1 +VCC = 29.5V,-VCC = -0.5V, VI= 0V,VCM = -14.5V, -0.5 0.5 mV 1 R S = 50Ω +VCC = 2V,-VCC = -28V, VI= 0V,VCM = +13V, -0.5 0.5 mV 1 R S = 50Ω (1) Calculatedparameter. (2) Pre and postirradiationlimitsareidenticaltothoselistedunderAC and DC electricalcharacteristicsexceptas listedinthePost RadiationLimitsTable.These partsmay be sensitiveina highdose environment.Low dose ratetestinghas been performedon a wafer-by-waferbasis,pertestmethod 1019 conditionD ofMIL-STD-883,withno enhanced lowdose ratesensitivity(ELDRS) effect.

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www.ti.com SNOSAJ4C –OCTOBER 2005–REVISED MARCH 2013 LM111 RADIATION ElectricalCharacteristicsSMD 5962R0052402 DC DELTA Parameters(1)(2)(continued) The followingconditionsapply,unlessotherwisespecified.VCC = ±15V,VCM = 0 Deltacalculationsperformedon QMLV devicesatgroupB ,subgroup5. Sub-Symbol Parameter Conditions Notes Min Max Unit groups ±IIB InputBiasCurrent VI= 0V,R S = 50KΩ -12.5 12.5 nA 1 +VCC = 29.5V,-VCC = -0.5V, VI= 0V,VCM = -14.5V, -12.5 12.5 nA 1 R S = 50KΩ +VCC = 2V,-VCC = -28V, VI= 0V,VCM = +13V, -12.5 12.5 nA 1 R S = 50KΩ ICEX OutputLeakage Current +VCC = 18V,-VCC = -18V, -5.0 5.0 nA 1VO = 32V LM111 RADIATION ElectricalCharacteristicsSMD 5962R0052402 Post RadiationParameters(1)(2) The followingconditionsapply,unlessotherwisespecified Sub-Symbol Parameter Conditions Notes Min Max Unit groups IIOR RaisedInputOffsetCurrent VI= 0V,R S = 50KΩ (3) −100 +100 nA 1 ±IIB InputBiasCurrent VI= 0V,R S = 50KΩ −180 0.1 nA 1 +VCC = 29.5V,−VCC = −0.5V,VI= −225 0.1 nA 1 0V,VCM = −14.5V,R S = 50KΩ ICEX OutputLeakage Current +VCC = 18V,−VCC = −18V, −1.0 +25 nA 1 VO = 32V (1) Calculatedparameter. (2) Pre and postirradiationlimitsareidenticaltothoselistedunderAC and DC electricalcharacteristicsexceptas listedinthePost RadiationLimitsTable.These partsmay be sensitiveina highdose environment.Low dose ratetestinghas been performedon a wafer-by-waferbasis,pertestmethod 1019 conditionD ofMIL-STD-883,withno enhanced lowdose ratesensitivity(ELDRS) effect. (3) Subscript(R)indicatestestswhichareperformedwithinputstagecurrentraisedby connectingBAL and BAL/STB terminalsto+VCC . Copyright© 2005–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 15 ProductFolderLinks:LM111QML

SNOSAJ4C –OCTOBER 2005–REVISED MARCH 2013 www.ti.com LM111 TypicalPerformance Characteristics InputBias Current InputBias Current Figure7. Figure8. InputBias Current InputBias Current Figure9. Figure10. InputBias Current InputBias Current Figure11. Figure12.

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www.ti.com SNOSAJ4C –OCTOBER 2005–REVISED MARCH 2013 LM111 TypicalPerformance Characteristics(continued) InputBias Current InputBias Current InputOverdrives InputOverdrives Figure13. Figure14. Response Time forVarious InputBias Current InputOverdrives Figure15. Figure16. Response Time forVarious InputOverdrives Output LimitingCharacteristics Figure17. Figure18. Copyright© 2005–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 17 ProductFolderLinks:LM111QML

SNOSAJ4C –OCTOBER 2005–REVISED MARCH 2013 www.ti.com LM111 TypicalPerformance Characteristics(continued) Supply Current Supply Current Figure19. Figure20. Leakage Currents Figure21.

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www.ti.com SNOSAJ4C –OCTOBER 2005–REVISED MARCH 2013 APPLICATION HINTS CIRCUIT TECHNIQUES FOR AVOIDING OSCILLATIONS IN COMPARATOR APPLICATIONS When a high-speedcomparatorsuch as theLM111 isused withfastinputsignalsand low sourceimpedances, theoutputresponsewillnormallybe fastand stable,assumingthatthepower supplieshave been bypassed(with 0.1μF disccapacitors),and thattheoutputsignalisroutedwellaway from theinputs(pins2 and 3) and also away frompins5 and 6. However,when theinputsignalisa voltageramp ora slowsinewave, orifthesignalsourceimpedance ishigh (1kΩ to100 kΩ),thecomparatormay burstintooscillationnearthecrossing-point.Thisisdue tothehighgain and wide bandwidthofcomparatorsliketheLM111. To avoidoscillationor instabilityinsuch a usage,several precautionsarerecommended, as shown inFigure22 below. 1. The trimpins(pins5 and 6) actas unwanted auxiliaryinputs.Ifthesepinsare notconnectedtoa trim-pot, theyshouldbe shortedtogether.Iftheyareconnectedtoa trim-pot,a 0.01μF capacitorC1 between pins5 and 6 willminimizethesusceptibilitytoAC coupling.A smallercapacitorisused ifpin5 isused forpositive feedbackas inFigure22. 2. Certainsourceswillproducea cleanercomparatoroutputwaveform ifa 100 pF to1000 pF capacitorC2 is connecteddirectlyacrosstheinputpins. 3. When thesignalsourceisappliedthrougha resistivenetwork,R S,itisusuallyadvantageoustochoose an R S′ ofsubstantiallythesame value,bothforDC and fordynamic (AC) considerations.Carbon,tin-oxide,and metal-filmresistorshave allbeen used successfullyin comparatorinputcircuitry.Inductivewire wound resistorsarenotsuitable. 4. When comparatorcircuitsuse inputresistors(e.g.summing resistors),theirvalue and placement are particularlyimportant.Inallcases thebody oftheresistorshouldbe closetothedeviceor socket.Inother words thereshouldbe verylittleleadlengthor printed-circuitfoilrun between comparatorand resistorto radiateorpickup signals.The same appliestocapacitors,pots,etc.For example,ifR S=10 kΩ,as littleas 5 inchesofleadbetween theresistorsand theinputpinscan resultinoscillationsthatareveryhardtodamp. Twistingthese inputleads tightlyis the only (second best)alternativeto placingresistorscloseto the comparator. 5. Sincefeedbacktoalmostany pinofa comparatorcan resultinoscillation,theprinted-circuitlayoutshouldbe engineeredthoughtfully.Preferablythereshouldbe a ground planeunder theLM111 circuitry,forexample, one sideofa double-layercircuitcard.Ground foil(or,positivesupplyornegativesupplyfoil)shouldextend between theoutputand theinputs,toactas a guard.The foilconnectionsfortheinputsshouldbe as small and compact as possible,and shouldbe essentiallysurroundedby groundfoilon allsides,toguardagainst capacitivecouplingfromany high-levelsignals(suchas theoutput).Ifpins5 and 6 arenotused,theyshould be shortedtogether.Iftheyareconnectedtoa trim-pot,thetrim-potshouldbe located,atmost,a few inches away from the LM111, and the 0.01 μF capacitorshouldbe installed.Ifthiscapacitorcannotbe used,a shieldingprinted-circuitfoilmay be advisablebetween pins6 and 7. The power supplybypass capacitors shouldbe locatedwithina coupleinchesoftheLM111. (Some othercomparatorsrequirethepower-supply bypasstobe locatedimmediatelyadjacenttothecomparator.) 6. Itisa standardproceduretouse hysteresis(positivefeedback)arounda comparator,topreventoscillation, and toavoidexcessivenoiseon theoutputbecause thecomparatorisa good amplifierforitsown noise.In the circuitof Figure23, the feedback from the outputto the positiveinputwillcause about 3 mV of hysteresis.However,ifR S islargerthan100Ω,such as 50 kΩ,itwould notbe reasonabletosimplyincrease thevalueofthepositivefeedbackresistorabove 510 kΩ.The circuitofFigure24 couldbe used,butitis ratherawkward.See thenotesinparagraph7 below. 7. When bothinputsoftheLM111 areconnectedtoactivesignals,orifa high-impedancesignalisdrivingthe positiveinputoftheLM111 so thatpositivefeedbackwould be disruptive,thecircuitofFigure22 isideal. The positivefeedbackisto pin5 (one of the offsetadjustmentpins).Itissufficientto cause 1 to 2 mV hysteresisand sharptransitionswithinputtrianglewaves from a few Hz tohundredsofkHz. The positive- feedbacksignalacrossthe82Ω resistorswings240 mV below thepositivesupply.Thissignaliscentered aroundthenominalvoltageatpin5,so thisfeedbackdoes notadd totheVOS ofthecomparator.As much as 8 mV ofVOS can be trimmedout,usingthe5 kΩ potand 3 kΩ resistoras shown. 8. These applicationnotesapplyspecificallytotheLM111 and areapplicabletoallhigh-speedcomparatorsin general,(withtheexceptionthatnotallcomparatorshave trimpins). Copyright© 2005–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 19 ProductFolderLinks:LM111QML

SNOSAJ4C –OCTOBER 2005–REVISED MARCH 2013 www.ti.com Pinconnectionsshown areforLM111H intheLMC0008C package Figure22. Improved PositiveFeedback Pinconnectionsshown areforLM111H intheLMC0008C package Figure23. ConventionalPositiveFeedback Figure24. PositiveFeedback withHigh Source Resistance

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www.ti.com SNOSAJ4C –OCTOBER 2005–REVISED MARCH 2013 TYPICAL APPLICATIONS Figure25. OffsetBalancing Note:Do Not Ground StrobePin.Outputisturnedoffwhen currentispulledfromStrobePin. Figure26. Strobing Increasestypicalcommon mode slewfrom7.0V/μs to18V/μs. Figure27. IncreasingInputStage Current Figure28. DetectorforMagnetic Transducer Copyright© 2005–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 21 ProductFolderLinks:LM111QML

SNOSAJ4C –OCTOBER 2005–REVISED MARCH 2013 www.ti.com Figure29. DigitalTransmissionIsolator *Absorbsinductivekickbackofrelayand protectsIC fromseverevoltagetransientson V++ line. Note:Do Not Ground StrobePin. Figure30. Relay DriverwithStrobe Note:Do Not Ground StrobePin. (1) Typicalinputcurrentis50 pA withinputsstrobedoff. (2) Pinconnectionsshown on schematicdiagramand typicalapplicationsareforLMC0008C package. Figure31. StrobingoffBoth Inputand Output Stages

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www.ti.com SNOSAJ4C –OCTOBER 2005–REVISED MARCH 2013 *Solidtantalum Figure32. PositivePeak Detector Figure33. Zero Crossing DetectorDrivingMOS Logic Copyright© 2005–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 23 ProductFolderLinks:LM111QML

SNOSAJ4C –OCTOBER 2005–REVISED MARCH 2013 www.ti.com TYPICAL APPLICATIONS FOR METAL CYLINDER PACKAGE (Pinnumbers refertoLMC0008C package) Figure34. Zero Crossing DetectorDrivingMOS Switch *TTL orDTL fanoutoftwo Figure35. 100 kHz Free Running Multivibrator

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www.ti.com SNOSAJ4C –OCTOBER 2005–REVISED MARCH 2013 *Adjustforsymmetricalsquarewave timewhen VIN = 5 mV †Minimum capacitance20 pF Maximum frequency50 kH Figure36. 10 Hz to10 kHz VoltageControlledOscillator *Inputpolarityisreversedwhen usingpin1 as output. Figure37. DrivingGround-ReferredLoad Figure38. Using Clamp Diodes toImprove Response Copyright© 2005–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 25 ProductFolderLinks:LM111QML

SNOSAJ4C –OCTOBER 2005–REVISED MARCH 2013 www.ti.com *Valuesshown arefora 0 to30V logicswingand a 15V threshold. †May be added tocontrolspeed and reducesusceptibilitytonoisespikes. Figure39. TTL InterfacewithHigh LevelLogic Figure40. CrystalOscillator Figure41. Comparator and SolenoidDriver

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www.ti.com SNOSAJ4C –OCTOBER 2005–REVISED MARCH 2013 *Solidtantalum †Adjusttosetclamp level Figure42. PrecisionSquarer *Solidtantalum Figure43. Low VoltageAdjustableReferenceSupply Copyright© 2005–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 27 ProductFolderLinks:LM111QML

SNOSAJ4C –OCTOBER 2005–REVISED MARCH 2013 www.ti.com *Solidtantalum Figure44. PositivePeak Detector Figure45. Zero Crossing DetectorDrivingMOS Logic *Solidtantalum Figure46. NegativePeak Detector

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www.ti.com SNOSAJ4C –OCTOBER 2005–REVISED MARCH 2013 *R2 setsthecomparisonlevel.Atcomparison,thephotodiodehas lessthan5 mV acrossit,decreasingleakagesby an orderofmagnitude. Figure47. PrecisionPhotodiode Comparator Figure48. SwitchingPower Amplifier Copyright© 2005–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 29 ProductFolderLinks:LM111QML

SNOSAJ4C –OCTOBER 2005–REVISED MARCH 2013 www.ti.com Figure49. SwitchingPower Amplifier

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www.ti.com SNOSAJ4C –OCTOBER 2005–REVISED MARCH 2013 Table2.RevisionHistory Released Revision Section Originator Changes 10/11/05 A New Release,Corporateformat L.Lytle 3 MDS datasheetsconvertedintoone Corp. datasheetformat.MNLM111-X Rev 0A0, MDLM111-X Rev.0B0,and MRLM111-X-RH Rev 0E1.The drifttablewas eliminatedfrom the883 sectionsinceitdidnotapply;Note #3 was removed fromRH & QML datasheetswith SG verificationthatitno longerapplied.Added NSID 's for50k Rad and PostRadiationTable. MDS datasheetswillbe archived. 12/14/05 B OrderingInformationTable R. Malone Removed NSID referenceLM111J-8PQMLV, 5962P0052401VPA 30k rd(Si).Reason:NSID on LTB, Inventory exhausted.Added followingNSID 's: LM111HPQMLV, LM111WPQMLV and LM111WGPQMLV. Reason:Stillhave Inventory.LM111QML, RevisionA willbe archived. 06/26/08 C Features,OrderingInformationTable, LarryMcGee Added Radiationreference,ELDRS NSID 's and ElectricalsectionNotes. Note 14 and 15,Low Dose ElectricalTable. Deleted30k rd(Si)NSID 's:LM111HPQMLV, LM111WPQMLV and LM111WGPQMLV. Reason:EOL 9/06/05.RevisionB willbe archived. 03/26/2013 C AllSections Changed layoutofNationalData SheettoTI format Copyright© 2005–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 31 ProductFolderLinks:LM111QML

www.ti.com 19-Jul-2016 Addendum-Page 1 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Drawing Pins Package Qty Eco Plan (2) Lead/Ball Finish (6) MSL Peak Temp (3) Op Temp (°C) Device Marking (4/5) Samples 5962L0052401VGA ACTIVE TO-99 LMC 8 20 TBD Call TI Call TI -55 to 125 LM111HLQMLV 5962L0052401VGA Q ACO 5962L0052401VGA Q 5962L0052401VHA ACTIVE CFP NAD 10 19 TBD Call TI Call TI -55 to 125 LM111W LQMLV Q 5962L00524 01VHA ACO 01VHA >T 5962L0052401VPA ACTIVE CDIP NAB 8 40 TBD Call TI Call TI -55 to 125 LM111J-8LQV 5962L00524 01VPA Q ACO 01VPA Q >T 5962L0052401VZA ACTIVE CFP NAC 10 54 TBD Call TI Call TI -55 to 125 LM111W GLQMLV Q 5962L00524 01VZA ACO 01VZA >T 5962R0052402VGA ACTIVE TO-99 LMC 8 20 TBD Call TI Call TI -55 to 125 LM111HRLQV 5962R0052402VGA Q ACO 5962R0052402VGA Q 5962R0052402VHA ACTIVE CFP NAD 10 19 TBD Call TI Call TI -55 to 125 LM111W RLQMLV Q 5962R00524 02VHA ACO 02VHA >T 5962R0052402VPA ACTIVE CDIP NAB 8 40 TBD Call TI Call TI -55 to 125 LM111J-8RLQV 5962R00524 02VPA Q ACO 02VPA Q >T 5962R0052402VZA ACTIVE CFP NAC 10 54 TBD Call TI Call TI -55 to 125 LM111W GRLQMLV Q 5962R00524 02VZA ACO 02VZA >T

www.ti.com 19-Jul-2016 Addendum-Page 2 Orderable Device Status (1) Package Type Package Drawing Pins Package Qty Eco Plan (2) Lead/Ball Finish (6) MSL Peak Temp (3) Op Temp (°C) Device Marking (4/5) Samples LM111 MD8 ACTIVE DIESALE Y 0 300 Green (RoHS & no Sb/Br) Call TI Level-1-NA-UNLIM -55 to 125 LM111 MW8 ACTIVE WAFERSALE YS 0 1 Green (RoHS & no Sb/Br) Call TI Level-1-NA-UNLIM -55 to 125 LM111-MDE ACTIVE DIESALE Y 0 40 Green (RoHS & no Sb/Br) Call TI Level-1-NA-UNLIM -55 to 125 LM111H/883 ACTIVE TO-99 LMC 8 20 TBD Call TI Call TI -55 to 125 LM111H/883 Q ACO LM111H/883 Q >T LM111HLQMLV ACTIVE TO-99 LMC 8 20 TBD Call TI Call TI -55 to 125 LM111HLQMLV 5962L0052401VGA Q ACO 5962L0052401VGA Q LM111HRLQMLV ACTIVE TO-99 LMC 8 20 TBD Call TI Call TI -55 to 125 LM111HRLQV 5962R0052402VGA Q ACO 5962R0052402VGA Q LM111J-8/883 ACTIVE CDIP NAB 8 40 TBD Call TI Call TI -55 to 125 LM111J-8 /883 Q ACO /883 Q >T LM111J-8LQMLV ACTIVE CDIP NAB 8 40 TBD Call TI Call TI -55 to 125 LM111J-8LQV 5962L00524 01VPA Q ACO 01VPA Q >T LM111J-8RLQMLV ACTIVE CDIP NAB 8 40 TBD Call TI Call TI -55 to 125 LM111J-8RLQV 5962R00524 02VPA Q ACO 02VPA Q >T LM111J/883 ACTIVE CDIP J 14 25 TBD Call TI Call TI -55 to 125 LM111J/883 Q LM111WG/883 ACTIVE CFP NAC 10 54 TBD Call TI Call TI -55 to 125 LM111WG /883 Q ACO /883 Q >T LM111WGLQMLV ACTIVE CFP NAC 10 54 TBD Call TI Call TI -55 to 125 LM111W GLQMLV Q 5962L00524 01VZA ACO 01VZA >T

www.ti.com 19-Jul-2016 Addendum-Page 3 Orderable Device Status (1) Package Type Package Drawing Pins Package Qty Eco Plan (2) Lead/Ball Finish (6) MSL Peak Temp (3) Op Temp (°C) Device Marking (4/5) Samples LM111WGRLQMLV ACTIVE CFP NAC 10 54 TBD Call TI Call TI -55 to 125 LM111W GRLQMLV Q 5962R00524 02VZA ACO 02VZA >T LM111WLQMLV ACTIVE CFP NAD 10 19 TBD Call TI Call TI -55 to 125 LM111W LQMLV Q 5962L00524 01VHA ACO 01VHA >T LM111WRLQMLV ACTIVE CFP NAD 10 19 TBD Call TI Call TI -55 to 125 LM111W RLQMLV Q 5962R00524 02VHA ACO 02VHA >T (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability information and additional product content details. TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above. Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material) (3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. (4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device. (5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation of the previous line and the two combined represent the entire Device Marking for that device.

www.ti.com 19-Jul-2016 Addendum-Page 4 (6) Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish value exceeds the maximum column width. Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release. In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis. OTHER QUALIFIED VERSIONS OF LM111QML, LM111QML-SP :

• Military: LM111QML
• Space: LM111QML-SP NOTE: Qualified Version Definitions:
• Military - QML certified for Military and Defense Applications
• Space - Radiation tolerant, ceramic packaging and qualified for use in Space-based application

www.ti.com J08A (Rev M)

www.ti.com WG10A (Rev H)

www.ti.com W10A (Rev H)

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