LM110 NSC | Alldatasheet

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Y Input current 10 nA max over temperature Y Small signal bandwidth 20 MHz Y Slew rate 30 V/ ms Y Supply voltage range g5V to g18V Schematic Diagram TL/H/7761–1 C1995 National Semiconductor Corporation RRD-B30M115/Printed in U. S. A.

If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/Distributors for availability and specifications. (Note 6) Supply Voltage g18V Power Dissipation (Note 1) 500 mW Input Voltage (Note 2) g15V Output Short Circuit Duration (Note 3) Indefinite Operating Temperature Range LM110 b55§Ct o a125§C LM210 b25§Ct o a85§C LM310 0 §Ct o a70§C Storage Temperature Range b65§Ct o a150§C Lead Temperature (Soldering, 10 sec.) 260 §C Soldering Information Dual-In-Line Package Soldering (10 sec.) 260 §C Small Outline Package Vapor Phase (60 sec.) 215 §C Infrared (15 sec.) 220 §C See AN-450 ‘‘Surface Mounting Methods and Their Effect on Product Reliability’’ for other methods of soldering sur- face mount devices. ESD rating to be determined. Electrical Characteristics (Note 4) Parameter Conditions LM110 LM210 LM310 Units Min Typ Max Min Typ Max Min Typ Max Input Resistance T A e 25§C1 0 10 1012 1010 1012 1010 1012 X Input Capacitance 1.5 1.5 1.5 pF Input Offset Voltage 6.0 6.0 10 mV Offset Voltage b55§C s TA s a85§C6 6 mV/§C Temperature Drift a85 s TA s 125§C1 2 mV/§C 0§C s TA s a70§C1 0 mV/§C Input Bias Current 10 10 10 nA Large Signal Voltage V S e g15V, V OUT e g10V 0.999 0.999 0.999 V/VGain R L e 10 k X Output Voltage V S e g15V, R L e 10 k X g10 g10 g10 VSwing (Note 5) Supply Current T A e 125§C 2.0 4.0 2.0 4.0 mA Supply Voltage g5V s VS s g18V 70 80 70 80 70 80 dBRejection Ratio Note 1: The maximum junction temperature of the LM110 is 150 §C, of the LM210 is 100 §C, and of the LM310 is 85 §C. For operating at elevated temperatures, devices in the HO8 package must be derated based on a thermal resistance of 165 §C/W, junction to ambient, or 22 §C/W, junction to case. The thermal resistance of the dual-in-line package is 100 §C/W, junction to ambient. Note 2: For supply voltages less than g15V, the absolute maximum input voltage is equal to the supply voltage. Note 3: Continuous short circuit for the LM110 and LM210 is allowed for case temperatures to 125 §C and ambient temperatures to 70 §C, and for the LM310, 70 §C case temperature or 55 §C ambient temperature. It is necessary to insert a resistor greater than 2 k X in series with the input when the amplifier is driven from low impedance sources to prevent damage when the output is shorted. R S e 5k min, 10k typical is recommended for dynamic stability in all applications. Note 4: These specifications apply for g5V s VS s g18V and b55§C s TA 125§C for the LM110, b25§C s TA s 85§C for the LM210, and 0 §C s TA s 70§C for the LM310 unless otherwise specified. Note 5: Increased output swing under load can be obtained by connecting an external resistor between the booster and V b terminals. See curve. Note 6: Refer to RETS110X for LM110H, LM110J military specifications. Application Hint The input must be driven from a source impedance of typically 10 k X (5 k X min.) to maintain stability. The total source impedance will be reduced at high frequencies if there is stray capacitance at the input pin. In these cases, a 10 k X resistor should be inserted in series with the input, physically close to the input pin to minimize the stray capacitance and prevent oscillation.

Typical Performance Characteristics (LM110/LM210) Input Current Output Noise Voltage Response Large Signal Pulse Phase Lag Voltage Gain and Phase Lag Voltage Gain and Voltage Gain Output Resistance Symmetrical Output Swing Positive Output Swing Frequency Response Large Signal Power Supply Rejection Supply Current TL/H/7761–28

Typical Performance Characteristics (LM310) Input Current Output Noise Voltage Response Large Signal Pulse Phase Lag Voltage Gain and Phase Lag Voltage Gain and Voltage Gain Output Resistance Symmetrical Output Swing Positive Output Swing Frequency Response Large Signal Power Supply Rejection Supply Current TL/H/7761–29

TL/H/7761–2 Increasing Negative Swing Under Load TL/H/7761–3 *May be added to reduce internal dissipation Typical Applications Differential Input Instrumentation Amplifier TL/H/7761–4 e R5 AV e R4 Fast Integrator with Low Input Current TL/H/7761–5

Typical Applications (Continued) Fast Inverting Amplifier with High Input Impedance TL/H/7761–6 Comparator for Signals of Opposite Polarity TL/H/7761–7 Zero Crossing Detector TL/H/7761–9

Typical Applications (Continued) Driver for A/D Ladder Network TL/H/7761–8 Buffer for Analog Switch * TL/H/7761–10 *Switch substrates are boot-strapped to reduce output capacitance of switch.

Typical Applications (Continued) Comparator for AC Coupled Signals TL/H/7761–11 High Input Impedance AC Amplifier TL/H/7761–12 Comparator for A/D Converter Using a Binary-Weighted Network TL/H/7761–13

Typical Applications (Continued) Bilateral Current Source TL/H/7761–14 IOUT e R3 VIN R1 R5 R3 e R4 a R5 R1 e R2 Comparator for A/D Converter Using a Ladder Network TL/H/7761–15 Sine Wave Oscillator fo e 10 kHz TL/H/7761–16

Typical Applications (Continued) Low Pass Active Filter TL/H/7761–18 *Values are for 10 kHz cutoff. Use silvered mica capacitors for good temperature stability. High Pass Active Filter TL/H/7761–19 *Values are for 100 Hz cutoff. Use metalized polycarbonate capacitors for good temperature stability. Simulated Inductor TL/H/7761–21

Typical Applications (Continued) Adjustable Q Notch Filter TL/H/7761–22 fo e 1 2qR1C1 R1 e R2 e 2R3 C1 e C2 e C3/2 Bandpass Filter TL/H/7761–23 Sample and Hold TL/H/7761–24 ²Use capacitor with polycarbonate teflon or polythylene dietetric

Typical Applications (Continued) Buffered Reference Source TL/H/7761–25 Low Drift Sample and Hold * ²Teflon polyethylene or polycarbonate dielectric capacitor *Worst case drift less than 3 mV/sec TL/H/7761–26 Variable Capacitance Multiplier C e 1 a Rb Ra J TL/H/7761–27

TL/H/7761–30 Package is connected to Pin 4 (V b) Top View Order Number LM110H, LM210H or LM310H LM110H/883* See NS Package Number H08C Dual-In-Line Package TL/H/7761–31 Top View Order Number LM110J, LM210J, LM310J or LM110J/883 * See NS Package Number J14A Dual-In-Line Package TL/H/7761–32 Top View Order Number LM310M, LM310N or LM110J-8/883 * See NS Package Number J08A, M08A or N08E *Available per SMD Ý 5962-8760601

Physical Dimensions inches (millimeters) Metal Can Package (H) Order Number LM110H, LM110H/883, LM210H or LM310H Dual-In-Line Package (J) Order Number LM110J-8/883

Physical Dimensions inches (millimeters) (Continued) Ceramic Dual-In-Line Package (J) Order Number LM110J/883 S.O. Package (M) Order Number LM310M

LM110/LM210/LM310 Voltage Follower Physical Dimensions inches (millimeters) (Continued) Molded Dual-In-Line Package (N) Order Number LM310N LIFE SUPPORT POLICY NATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF NATIONAL SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life systems which, (a) are intended for surgical implant support device or system whose failure to perform can into the body, or (b) support or sustain life, and whose be reasonably expected to cause the failure of the life failure to perform, when properly used in accordance support device or system, or to affect its safety or with instructions for use provided in the labeling, can effectiveness. be reasonably expected to result in a significant injury to the user. National Semiconductor National Semiconductor National Semiconductor National Semiconductor Corporation Europe Hong Kong Ltd. Japan Ltd.

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