LM0804A LEIDITECH | Alldatasheet

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ID (at VGS=10V) 100A RDS(ON) (atVGS=10V) 3.2mΩ(Typ) Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Maximum Units Drain-SourceVoltage VDS 80 V Gate-SourceVoltage VGS +20/-12 V DrainCurrent-Continuous TC=25°C ID 100 A TC=100°C ID A MaximumPower Dissipation PD 142 W Single pulseavalancheenergy(1) EAS 540 mJ JunctionandStorage TemperatureRange TJ,TSTG -55To 150 ℃ Thermal Characteristics Parameter Symbol Typ Max Unit ThermalResistancejunction-case RθJc 1.1 ℃ /W ThermalResistanceunction-to-Ambient RθJA 62 ℃ /W D G S PDFN5x6 D S G S S D D D Enhancement Mode Field Effect Transistor N-Channel LM0804A Rev : www.leiditech.com 01.06.2018 1/5

Electrical Characteristics (TJ=25℃ unless otherwise noted) Symbol Parameter Condition Min Typ Max Unit STATIC PARAMETERS BVDSS Drain-SourceBreakdown Voltage VGS=0VID=250μA 80 V IDSS ZeroGate VoltageDrainCurrent VDS=80V,VGS=0V 1 μA IGSS Gate-BodyLeakageCurrent VGS=20V,VDS=0V 100 nA VGS(th) Gate ThresholdVoltage VDS=VGS,ID=250μA 1.2 1.6 2.5 V RDS(ON) Drain-Source On-State Resistance VGS=10V, ID=20A 3.2 3.9 mΩ DYNAMIC PARAMETERS Clss Input Capacitance VDS=30V,VGS=0V, F=1.0MHz 5160 pF Coss OutputCapacitance 1346 pF Crss ReverseTransferCapacitance pF SWITCHING PARAMETERS td(on) Turn-on DelayTime VDD=40V,ID=1A, VGS=10V, RG=6Ω nS tr Turn-on RiseTime nS td(off) Turn-Off DelayTime nS tf Turn-Off FallTime nS Qg Total GateCharge VDS=40V,ID=10A, VGS=10V nC Qgs Gate-SourceCharge 10.2 nC Qgd Gate-DrainCharge nC VSD Diode Forward Voltage VGS=0V,ISD=10A 0.72 1.2 V Rg Gate resistance VGS=0V,VDS=0V, F=1MHz 1.65 Ω Note： 1. Repetitive Rating : Pulsed width limited by maximum junction temperature. 2. VDD=25V,VGS=10V,L=0.1mH,IAS=95A., Starting TJ=25℃ 3. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%. 4. Essentially independent of operating temperature. VGS=4.5V, ID=10A 4.5 6.0 mΩ LM0804A Rev : www.leiditech.com 01.06.2018 2/5

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS I D , Continuous Drain Current (A) TC , Case Temperature (℃) Fig.1 Continuous Drain Current vs. TC T J , Junction Temperature ( ) Fig.3 Normalized Vth vs. T J Normalized Gate Threshold V oltage (V) Qg , Gate Charge (nC) Fig.4 Gate Charge Characteristics VGS , Gate to Source V oltage (V) Square Wave Pulse Duration (s) Fig.5 Normalized Transient Impedance V DS , Drain to Source Voltage (V) Fig.6 Maximum Safe Operation Area Normalized Thermal Response (RθJC) ID , Drain Current (A) T J , Junction Temperature ( ) Fig.2 Normalized RDSON vs. T J Normalized On Resistance (mΩ ) LM0804A Rev : www.leiditech.com 01.06.2018 3/5

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS Fig.7 Switching Time Waveform Fig.8 Gate Charge Waveform LM0804A Rev : www.leiditech.com 01.06.2018 4/5

Symbol Dimensions In Millimeters Dim ensions In Inches MAX MIN MAX MIN A 1.100 0.800 0.043 0.031 b 0.510 0.330 0.020 0.013 C 0.300 0.200 0.012 0.008 D1 5.100 4.800 0.201 0.189 D2 4.100 3.610 0.161 0.142 E 6.200 5.900 0.244 0.232 E1 5.900 5.700 0.232 0.224 E2 3.780 3.350 0.149 0.132 e 1.27BSC 0.05BSC H 0.700 0.410 0.028 0.016 K 1.500 1.100 0.059 0.043 L 0.710 0.510 0.028 0.020 L1 0.200 0.060 0.008 0.002 θ 12° 0° 12° 0° DFN5x6 PACKAGE INFORMATION LM0804A Shanghai Leiditech Electronic Co.,Ltd Email: sale1@leiditech.com Tel : +86- 021 50828806 Fax : +86- 021 50477059 Rev : www.leiditech.com 01.06.2018 5/5