IRLL024N IRF | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 8
Technical content
HEXFET ® Power MOSFET PD - 91895 S D G VDSS = 55V R DS(on) = 0.065Ω ID = 3.1A Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The SOT-223 package is designed for surface-mount using vapor phase, infra red, or wave soldering techniques. Its unique package design allows for easy automatic pick- and-place as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heatsinking. Power dissipation of 1.0W is possible in a typical surface mount application. 6/15/99
Description
l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l Fast Switching l Fully Avalanche Rated SOT-223 * When mounted on FR-4 board using minimum recommended footprint. ** When mounted on 1 inch square copper board, for comparison with other SMD devices. Parameter Typ. Max. Units R θJA Junction-to-Amb. (PCB Mount, steady state)* 90 120 R θJA Junction-to-Amb. (PCB Mount, steady state) 50 60 Thermal Resistance °C/W Parameter Max. Units ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 4.4 ID @ TA = 25°C Continuous Drain Current, VGS @ 10V* 3.1 ID @ TA = 70°C Continuous Drain Current, VGS @ 10V* 2.5 IDM Pulsed Drain Current 12 PD @T A = 25°C Power Dissipation (PCB Mount)** 2.1 W PD @T A = 25°C Power Dissipation (PCB Mount)* 1.0 W Linear Derating Factor (PCB Mount)* 8.3 mW/°C VGS Gate-to-Source Voltage ± 16 V EAS Single Pulse Avalanche Energy 120 mJ IAR Avalanche Current 3.1 A EAR Repetitive Avalanche Energy* 0.1 mJ dv/dt Peak Diode Recovery dv/dt 5.0 V/ns TJ, TSTG Junction and Storage Temperature Range -55 to + 150 °C Absolute Maximum Ratings A www.irf.com 1
2 www.irf.com Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 55 ––– ––– V V GS = 0V, ID = 250µA ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient ––– 0.048 ––– V/°C Reference to 25°C, ID = 1mA VGS(th) Gate Threshold Voltage 1.0 ––– 2.0 V V DS = VGS , ID = 250µA gfs Forward Transconductance 3.3 ––– ––– S V DS = 25V, ID = 1.9 A ––– ––– 25 µA VDS = 55V, VGS = 0V ––– ––– 250 V DS = 44V, VGS = 0V, TJ = 125°C Gate-to-Source Forward Leakage ––– ––– 100 nA VGS = 16V Gate-to-Source Reverse Leakage ––– ––– -100 V GS = -16V Q g Total Gate Charge ––– 10.4 15.6 I D = 1.9A Q gs Gate-to-Source Charge ––– 1.5 2.3 nC V DS = 44V Q gd Gate-to-Drain ("Miller") Charge ––– 5.5 8.3 V GS = 5.0V, See Fig. 6 and 9 td(on) Turn-On Delay Time ––– 7.4 ––– V DD = 28V tr Rise Time ––– 21 ––– ns ID = 1.9A td(off) Turn-Off Delay Time ––– 18 ––– R G = 24 Ω tf Fall Time ––– 25 ––– R D = 15 Ω, See Fig. 10 C iss Input Capacitance ––– 510 ––– V GS = 0V C oss Output Capacitance ––– 140 ––– pF V DS = 25V C rss Reverse Transfer Capacitance ––– 58 ––– ƒ = 1.0MHz, See Fig. 5 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) IGSS RDS(on) Static Drain-to-Source On-Resistance IDSS Drain-to-Source Leakage Current Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) ISD ≤ 1.9A, di/dt ≤ 270A/µs, VDD ≤ V(BR)DSS , TJ ≤ 150°C Notes: Starting TJ = 25°C, L = 25 mH RG = 25Ω , IAS = 3.1A. (See Figure 12) Pulse width ≤ 300µs; duty cycle ≤ 2%. Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) showing the ISM Pulsed Source Current integral reverse (Body Diode) p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.0 V T J = 25°C, IS = 1.9A, VGS = 0V trr Reverse Recovery Time ––– 39 58 ns T J = 25°C, IF = 1.9A Q rr Reverse RecoveryCharge ––– 63 94 nC di/dt = 100A/µs ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Source-Drain Ratings and Characteristics 3.1 A
www.irf.com 3 Fig 4. Normalized On-Resistance Vs. Temperature Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics Fig 3. Typical Transfer Characteristics 100 0.1 1 10 100 20µs PULSE WIDTH T = 25CJ ° TOP BOTTOM VGS 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V 2.7V V , Drain-to-Source Voltage (V) I , Drain-to-Source Current (A) DS D 2.7V 100 0.1 1 10 100 20µs PULSE WIDTH T = 150CJ ° TOP BOTTOM VGS 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V 2.7V V , Drain-to-Source Voltage (V) I , Drain-to-Source Current (A) DS D 2.7V -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 T , Junction Temperature( C) R , Drain-to-Source On Resistance (Normalized) J DS(on) V = I = GS D 10V 3.1A 100 2 4 6 8 10 12 V = 25V 20µs PULSE WIDTH DS V , Gate-to-Source Voltage (V) I , Drain-to-Source Current (A) GS D T = 25 CJ ° T = 150 CJ °
4 www.irf.com Fig 8. Maximum Safe Operating Area Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 7. Typical Source-Drain Diode Forward Voltage 1 10 100 200 400 600 800 1000 V , Drain-to-Source Voltage (V) C, Capacitance (pF) DS V C C C 0V, C C C f = 1MHz + C + C C SHORTED GS iss gs gd , ds rss gd oss ds gd C iss C oss C rss 0 4 8 12 16 20 Q , Total Gate Charge (nC) V , Gate-to-Source Voltage (V) G GS FOR TEST CIRCUIT SEE FIGURE I =D 1.9A V = 11VDS V = 27VDS V = 44VDS 0.1 100 V ,Source-to-Drain Voltage (V) I , Reverse Drain Current (A) SD SD V = 0 V GS T = 25 CJ ° T = 150 CJ ° 0.1 100 0.1 1 10 100 1000 OPERATION IN THIS AREA LIMITED BY R DS(on) Single Pulse T T = 150 C = 25 C° C V , Drain-to-Source Voltage (V) I , Drain Current (A)I , Drain Current (A) DS D 100us 1ms 10ms
www.irf.com 5 Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient Fig 9. Maximum Drain Current Vs. Case Temperature 0.1 100 1000 Notes: 1. Duty factor D =t / t 2. Peak T= P x Z + T 1 2 J DM thJA A P t t DM t , Rectangular Pulse Duration (sec) Thermal Response (Z ) thJA 0.01 0.02 0.05 0.10 0.20 D = 0.50 SINGLE PULSE (THERMAL RESPONSE) 25 50 75 100 125 150 0.0 1.0 2.0 3.0 4.0 T , Case Temperature( C) I , Drain Current (A) D Fig 10a. Switching Time Test Circuit VDS 90% 10% VGS td(on) tr td(off) tf Fig 10b. Switching Time Waveforms VDS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % R D VGS R G D.U.T. 5.0V -VDD
6 www.irf.com Fig 12c. Maximum Avalanche Energy Vs. Drain Current Fig 12b. Unclamped Inductive Waveforms tp V (BR)DSS IAS Fig 12a. Unclamped Inductive Test Circuit R G IAS 0.01 Ωtp D.U.T LV DS - V DD DRIVER A 15V 10V Q G Q GS Q GD VG Charge D.U.T. VDS IDIG 3mA VGS .3µF 50KΩ .2µF12V Current Regulator Same Type as D.U.T. Current Sampling Resistors 5.0 V Fig 13b. Gate Charge Test CircuitFig 13a. Basic Gate Charge Waveform 25 50 75 100 125 150 100 150 200 250 300 Starting T , Junction Temperature( C) E , Single Pulse Avalanche Energy (mJ) J AS ID TOP BOTTOM 1.4A 2.5A 3.1A
www.irf.com 7 Package Outline SOT-223 (TO-261AA) Outline SOT-223 Part Marking Information DATE CODE (YWW) Y = LAST DIGIT OF THE YEAR WW = WEE K BOTTOM PART NUMBER TOP INTERNATIONAL RECTIFIER LOGO EXAMPLE : THIS IS AN IRFL014 W AFER LOT CODE XXXXXX314 FL014
8 www.irf.com SOT-223 Outline Tape & Reel Information 4.10 (.161) 1.95 (.077) 12.10 (.475) 11.90 (.469) 7.10 (.279) 6.90 (.272) 1.60 (.062) 1.50 (.059) TYP. 7.55 (.297) 7.45 (.294) 7.60 (.299) 7.40 (.292) 2.30 (.090) 2.10 (.083) 16.30 (.641) 15.70 (.619) 0.35 (.013) 0.25 (.010) FEED DI RECTI ON TR 13.20 (.519) 12.80 (.504) 50.00 (1.969) M IN . 330.00 (13.000) MAX. NOTES : 1. CONTROLLI NG DI MENSI ON: MI LLI METER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. 3. EACH O330.00 (13.00) REEL CONTAINS 2,500 DEVICES. NOTES : 1. OUTLINE COMFORMS TO EIA-418-1. 2. CONTROLLI NG DIMENSION: MI LLIMETER.. 3. DIMENSI ON MEASURED @ HUB. 4. I NCLUDES FLANGE DI STORTI ON @ OUTER EDGE. 15.40 (.607) 11.90 (.469) 18.40 (.724) M AX. 14.40 (.566) 12.40 (.488) WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630 IR TAIWAN: 16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936 http://www.irf.com/ Data and specifications subject to change without notice. 6/99