LH0042 NSC | Alldatasheet

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Y High open loop gainÐ100 dB typ Y Internal compensation Y Pin compatible with standard IC op amps (TO-99 package) Connection Diagram Metal Can Package TL/K/5557–3 Top View Order Number LH0042H-MIL, LH0042H or LH0042CH See NS Package Number H08D C1995 National Semiconductor Corporation RRD-B30M115/Printed in U. S. A.

If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/Distributors for availability and specifications. Supply Voltage g22V Power Dissipation (see Graph) 500 mW Input Voltage (Note 1) g15V Differential Input Voltage (Note 2) g30V Voltage Between Offset Null and V b g0.5V Short Circuit Duration Continuous Operating Temperature Range LH0022, LH0042, LH0052 b55§Ct o a125§C LH0022C, LH0042C, LH0052C b25§Ct o a85§C Storage Temperature Range b65§Ct o a150§C Lead Temperature (Soldering, 10 sec.) 300 §C Limits Parameter Conditions LH0022 LH0022C Units Min Typ Max Min Typ Max Input Offset Voltage R S s 100 k X,T A e 25§C 2.0 4.0 3.5 6.0 mVVS e g15V RS s 100 k X,V S e g15V 5.0 7.0 mV Temperature Coefficient of R S s 100 k X 10 15 mV/§CInput Offset Voltage Offset Voltage Drift with Time 3 4 mV/week Input Offset Current T A e 25§C (Note 4) 0.2 2.0 1.0 5.0 pA 2.0 0.5 nA Temperature Coefficient of Doubles Every 10 §C Doubles Every 10 §CInput Offset Current Offset Current Drift with Time 0.1 0.1 pA/week Input Bias Current T A e 25§C (Note 4) 5 10 10 25 pA 10 2.5 nA Temperature Coefficient of Doubles Every 10 §C Doubles Every 10 §CInput Bias Current Differential Input Resistance 10 12 1012 X Common Mode Input Resistance 10 12 1012 X Input Capacitance 4.0 4.0 pF Input Voltage Range V S e g15V g12 g13.5 g12 g13.5 V Common Mode Rejection Ratio R S s 10 k X,V IN e g10V 74 90 70 90 dB Supply Voltage Rejection Ratio R S s 10 k X, g5V s VS s g15V 74 90 70 90 dB Large Signal Voltage Gain R L e 2k X,V OUT e g10V 75 100 75 100 V/mVTA e 25§C, V S e g15V RL e 2k X,V OUT e g10V 30 30 V/mVVS e g15V Output Voltage Swing R L e 1k X,T A e 25§C g10 g12.5 g10 g12 VVS e g15V RL e 2k X,V S e g15V g10 g10 V Output Current Swing V OUT e g10V, T A e 25§C g10 g15 g10 g15 mA Output Resistance 75 75 X Output Short Circuit Current 25 25 mA Supply Current V S e g15V 2.0 2.5 2.4 2.8 mA Power Consumption V S e g15V 75 85 mW

Parameter Conditions LH0042 LH0042C Units Min Typ Max Min Typ Max Input Offset Voltage R S s 100 k X 5.0 20 6.0 20 mV Temperature Coefficient of R S s 100 k X 10 15 mV/§CInput Offset Voltage Offset Voltage Drift with Time 7.0 10 mV/week Input Offset Current T A e 25§C (Note 4) 1.0 5.0 2.0 10 pA Input Bias Current T A e 25§C (Note 4) 10 25 15 50 pA Temperature Coefficient of Doubles Every 10 §C Doubles Every 10 §CInput Bias Current Differential Input Resistance 10 12 1012 X Common Mode Input Resistance 10 12 1012 X Input Capacitance 4.0 4.0 pF Input Voltage Range g12 g13.5 g12 g13.5 V Common Mode Rejection Ratio R S s 10 k X,V IN e g10V 70 86 70 80 dB Supply Voltage Rejection Ratio R S s 10 k X, g5V s VS s g15V 70 86 70 86 dB Large Signal Voltage Gain R S s 2k X,V OUT e g10V, 50 100 25 100 V/mVTA e 25§C RS s 2k X,V OUT e g10V 30 25 V/mV Output Voltage Swing R L e 1k X,T A e 25§C g10 g12.5 g10 g12 V RL e 2k X g10 g10 V Output Current Swing V OUT e g10V g10 g15 g10 g15 mA Output Resistance 75 75 X Output Short Circuit Current 20 20 mA Supply Current V S e g15V 2.5 3.5 2.8 4.0 mA Power Consumption V S e g15V 105 120 mW

Parameter Conditions LH0052 LH0052C Units Min Typ Max Min Typ Max Input Bias Current T A e 25§C (Note 4) 0.5 2.5 1.0 5.0 pA 2.5 0.5 nA Temperature Coefficient of Doubles Every 10 §C Doubles Every 10 §CInput Bias Current Differential Input Resistance 10 12 1012 X Common Mode Input Resistance 10 12 1012 X Input Capacitance 4.0 4.0 pF Input Voltage Range V S e g15V g12 g13.5 g12 g13.5 V Common Mode Rejection Ratio R S s 10 k X,V IN e g10V 74 90 70 90 dB Supply Voltage Rejection Ratio R S s 10 k X, g5V s VS s g15V 74 90 70 90 dB Large Signal Voltage Gain R L e 2k X,V OUT e g10V 75 100 75 100 V/mVVS e g15V, T A e 25§C RL e 2k X,V OUT e g10V 30 30 V/mVVS e g15V Output Voltage Swing R L e 1k X,T A e 25§C g10 g12.5 g10 g12 VVS e g15V RL e 2k X,V S e g15V g10 g10 V Output Current Swing V OUT e g10V, T A e 25§C g10 g15 g10 g15 mA Output Resistance 75 75 X Output Short Circuit Current 25 25 mA Supply Current V S e g15V 3.0 3.5 3.0 3.8 mA Power Consumption V S e g15V 105 114 mW Limits Parameter Conditions LH0022/42/52 LH0022C/42C/52C Units Min Typ Max Min Typ Max Slew Rate Voltage Follower 1.5 3.0 1.0 3.0 V/ ms Large Signal Bandwidth Voltage Follower 40 40 kHz Small Signal Bandwidth 1.0 1.0 MHz Rise Time 0.3 1.5 0.3 1.5 ms Overshoot 10 30 15 40 % Settling Time (0.1%) DVIN e 10V 4.5 4.5 ms Overload Recovery 4.0 4.0 ms

Parameter Conditions LH0042 LH0042C Units Min Typ Max Min Typ Max Input Noise Voltage R S e 10 k X,f o e 10 Hz 150 150 nV/ SHz RS e 10 k X,f o e 100 Hz 55 55 nV/ SHz RS e 10 k X,f o e 1 kHz 35 35 nV/ SHz RS e 10 k X,f o e 10 kHz 30 30 nV/ SHz BW e 10 Hz to 10kHz, R S e 10 k X 12 12 mVrms Note 1: For supply voltages less than g15V, the absolute maximum input voltage is equal to the supply voltage. Note 2: Rating applies for minimum source resistance of 10 k X, for source resistances less than 10 k X, maximum differential input voltage is g5V. Note 3: Unless otherwise specified, these specifications apply for g5V s VS s g20V and b55§C s TA s a125§C for the LH0042 and b25§C s TA s a85§C for the LH0042C. Typical values are given for T A e 25§C. Note 4: Input currents are a strong function of temperature. Due to high speed testing they are specified at a junction temperature T j e 25§C. Self heating will cause an increase in current in manual tests. 25 §C spec is guaranteed by testing at 125 §C. Note 5: See RETS0042X for the LH0042H military specifications. Auxiliary Circuits (Shown for TO-99 pin out) Offset Null TL/K/5557–5 Protecting Inputs from g150V Transients Note: All diodes are ultra low leakage. TL/K/5557–6 Boosting Output Drive to g100 mA TL/K/5557–7

TL/K/5557–1

Precision Voltage Comparator TL/K/5557–9 Subtractor for Automatic Test Gear TL/K/5557–11 eOUT e 10 c (eIN1 b eIN2) Sensitive Low Cost ‘‘VTVM’’ TL/K/5777–12

Typical Applications (Continued) Ultra Low Level Current Source TL/K/5777–13 Sample and Hold *Polystyrene dielectric. TL/K/5557–16 Re-Zeroing Amplifier C1Ð0.01 mF polystyrene. TL/K/5557–17

Typical Performance Characteristics Maximum Power Dissipation vs Temperature Input Offset Current Temperature Input Bias Current vs vs Temperature Input Offset Voltage (without V OS Null) Offset Error vs Source Resistance Total Input Noise Voltage * vs Frequency Total Input Noise Voltage * vs Supply Voltage Common Mode Input Voltage Power Turn-On Input Offset Voltage from Stabilization Time of Shock vs Time Voltage Due to Thermal Change in Input Offset TL/K/5557–18 *Noise voltage includes contribution from source resistance.

Typical Performance Characteristics (Continued) Supply Current Supply Voltage vs Voltage Gain Supply Voltage Output Swing vs vs Load Resistance Output Voltage Swing Current Limiting Frequency Output Voltage Swing vs Signal Response Voltage Follower Large Transient Response Ambient Temperature Frequency Characteristics vs Supply Voltage Frequency Characteristics vs Frequency Output Resistance vs Characteristics vs Frequency Open Loop Transfer TL/K/5557–19

LH0042 Low Cost FET Op Amp Physical Dimensions inches (millimeters) Metal Can Package (H) Order Number H0042H-MIL, LH0042H or LH0042CH LIFE SUPPORT POLICY NATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF NATIONAL SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life systems which, (a) are intended for surgical implant support device or system whose failure to perform can into the body, or (b) support or sustain life, and whose be reasonably expected to cause the failure of the life failure to perform, when properly used in accordance support device or system, or to affect its safety or with instructions for use provided in the labeling, can effectiveness. be reasonably expected to result in a significant injury to the user. National Semiconductor National Semiconductor National Semiconductor National Semiconductor Corporation Europe Hong Kong Ltd. Japan Ltd.

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