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Document overview

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Technical content

Features

Applications

  • Positive temperature coefficient for safe operation and ease of paralleling
  • 175 °C maximum operating junction temperature
  • Enhanced surge capability
  • Extremely fast, temperature-independent switching behavior
  • Dramatically reduced switching losses compared to Si bipolar diodes
  • Boost diodes in power factor correction
  • Switch-mode power supplies
  • Uninterruptible power supplies
  • Solar inverters
  • Industrial motor drives Maximum Ratings Characteristics Symbol Conditions Max. Unit DC Blocking Voltage VR - 650 V Repetitive Peak Reverse Voltage, Tj = 25 °C VRRM 650 V Surge Peak Reverse Voltage VRSM 650 V Maximum DC Forward Current IF TC = 156 °C 4 A Non-Repetitive Forward Surge Current I FSM TC = 25 °C, 8.3 ms, half sine pulse 32 A Non-Repetitive Peak Forward Current IF ,MAX TC = 25 °C, 10 µS 235 A Non-Repetitive Avalanche Energy EAS Tj = 25 °C, L = 5 mH, Ipk = 3.55 A, VDD = 100 V 33 mJ Power Dissipation PTot TC = 25 °C 71 W TC = 156 °C 9 Maximum Operating Junction Temperature T J,MAX 175 °C Storage Temperature TSTG -55 to 175 °C Circuit Diagram

Description

The LFUSCD series of silicon carbide (SiC) Schottky di- odes has near-zero recovery current, high surge capability, and a maximum operating junction temperature of 175 °C. The diode series is ideal for applications where improve- ments in efficiency, reliability, and thermal management are desired. Case

© 2016 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 10/05/16 SiC Schottky Diode LFUSCD04065A, 650 V , 4 A, TO-220 2-lead 1.E-08 1.E-07 1.E-06 1.E-05 1.E-04 2002 50 3003 50 4004 50 5005 50 6006 50 Reverse Current, IR (A) Reverse Voltage, VR (V) - 55 °C 25 °C 100 °C 175 °C 10-4 10-5 10-6 10-7 10-8 Figure 2: T ypical Foward CharacteristicsFigure 1: T ypical Reverse Characteristics 0123 4 Forward Current, IF (A) Forward Voltage, VF (V) - 55 °C 25 °C 100 °C 150 °C 175 °C Characteristics Symbol Conditions Value Unit Min. Typ. Max. Forward Voltage VF IF = 4 A, TJ = 25 °C - 1. 5 1. 7 VIF = 4 A, TJ = 150 °C - 1. 8 2.1 IF = 4 A, TJ = 175 °C - 2.0 2.25 Reverse Current IR VR = 650 V , TJ = 25 °C - 10 170 μA VR = 650 V , TJ = 175 °C - 20 550 Total Capacitive Charge QC VR = 400 V , IF = 4 A, di/dt = 110 A/µs - 6 - nC Total Capacitance C VR = 1 V , f =1 MHz - 125 - pFVR = 300 V , f = 1 MHz - 16 - VR = 600 V , f = 1 MHz - 13 -

Electrical Characteristics

Footnote: TJ = +25 °C unless otherwise specified Thermal Characteristics Characteristics Symbol Conditions Value Unit Min. Typ. Max. Thermal Resistance RθJC - - - 2.1 °C/W

© 2016 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 10/05/16 SiC Schottky Diode LFUSCD04065A, 650 V , 4 A, TO-220 2-lead Dimensions-Package TO-220 2-lead Packing Specification ( T ube for TO-220 2-lead ) Symbol Inches Millimeters Min Max Min Max A 0.165 0.185 4.19 4.70 A1 0.048 0.052 1 .22 1 .32 A2 0.094 0.098 2.39 2.49 b 0.025 0.035 0.64 0.89 b2 0.045 0.055 1. 14 1 .40 C 0.018 0.025 0.46 0.64 D 0.595 0.615 15.11 15.62 D1 0.355 0.365 9.02 9.27 E 0.381 0.391 9.68 9.93 e1 0.198 0.202 5.03 5.13 L 0.500 0.510 12.70 12.95 L1 0.120 0.150 3.05 3.81 øP 0.143 0.147 3.63 3.73 Q 0.100 0.120 2.54 3.05 Part Marking System Packing Options Part Number Marking Packing Mode M.O.Q LFUSCD04065A LFUSCD04065A 50 pcs / Tube 500 Mounting M3/M3.5 1Nm Torque Screw 8.8 lbf-in Note: All units in Millimeters. Tolerances ± 0.25mm unless otherwise specified. LFUSCD 04065A PYWXX ZZZ SCD = SiC diode 04 = Current Rating(4A) 065 = Voltage Rating (650V) A = TO-220-2 package PYWXX = Date Code ZZZ = Lot Number LFU = Littelfuse Date code notes: P = assembly code Y = year W = week XX = sequencial build number