LF353-N TI1 | Alldatasheet

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www.ti.com SNOSBH3F –APRIL 1998–REVISED MARCH 2013 LF353-NWideBandwidthDualJFETInputOperationalAmplifier Check forSamples: LF353-N 1FEATURES DESCRIPTION These devicesare low cost,highspeed,dualJFET 2• InternallyTrimmed OffsetVoltage:10 mV inputoperationalamplifierswithan internallytrimmed• Low InputBias Current:50pA inputoffsetvoltage(BI-FET II technology).They

  • Low InputNoise Voltage:25 nV/√Hz requirelow supplycurrentyetmaintaina largegain bandwidthproductand fastslewrate.Inaddition,well• Low InputNoise Current:0.01pA/√Hz matched high voltageJFET inputdevicesprovide• Wide Gain Bandwidth: 4 MHz verylow inputbiasand offsetcurrents.The LF353-N
  • High Slew Rate:13 V/μs ispincompatiblewiththestandardLM1558 allowing designers to immediately upgrade the overall• Low Supply Current:3.6mA performanceofexistingLM1558 and LM358 designs.• High InputImpedance: 1012Ω These amplifiersmay be used inapplicationssuch as• Low TotalHarmonic Distortion:≤0.02% high speed integrators,fastD/A converters,sample• Low 1/fNoise Corner:50 Hz and holdcircuitsand many othercircuitsrequiringlow
  • FastSettlingTime to0.01%:2 μs inputoffsetvoltage,low inputbiascurrent,highinput impedance,highslew rateand wide bandwidth.The devicesalsoexhibitlownoiseand offsetvoltagedrift. TypicalConnection Pleasebe aware thatan importantnoticeconcerningavailability,standardwarranty,and use incriticalapplicationsof Texas Instrumentssemiconductorproductsand disclaimerstheretoappearsattheend ofthisdatasheet. 2Alltrademarksarethepropertyoftheirrespectiveowners. PRODUCTION DATA informationiscurrentas ofpublicationdate. Copyright© 1998–2013,Texas InstrumentsIncorporatedProductsconform to specificationsper the terms of the Texas Instrumentsstandardwarranty.Productionprocessingdoes not necessarilyincludetestingofallparameters.

SNOSBH3F –APRIL 1998–REVISED MARCH 2013 www.ti.com SimplifiedSchematic Figure1. 1/2Dual Dual-In-LinePackage Top View Figure2. 8-PinSOIC (See D Package) 8-PinPDIP (See P Package)

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www.ti.com SNOSBH3F –APRIL 1998–REVISED MARCH 2013 These deviceshave limitedbuilt-inESD protection.The leadsshouldbe shortedtogetherorthedeviceplacedinconductivefoam duringstorageorhandlingtopreventelectrostaticdamage totheMOS gates. AbsoluteMaximum Ratings(1)(2) SupplyVoltage ±18V Power Dissipation See (3) OperatingTemperatureRange 0°C to+70°C Tj(MAX) 150°C DifferentialInputVoltage ±30V InputVoltageRange (4) ±15V OutputShortCircuitDuration Continuous StorageTemperatureRange −65°C to+150°C Lead Temp. (Soldering,10 sec.) 260°C SolderingInformation:Dual-In-LinePackage Soldering(10sec.) 260°C SmallOutlinePackage Vapor Phase (60sec.) 215°C Infrared(15sec.) 220°C ESD Tolerance(5) 1000V θJA D Package TBD (1) AbsoluteMaximum Ratingsindicatelimitsbeyond whichdamage tothedevicemay occur.Operatingratingsindicateconditionsfor whichthedeviceisfunctional,butdo notensurespecificperformancelimits.ElectricalCharacteristicsstateDC and AC electrical specificationsunderparticulartestconditionswhichensurespecificperformancelimits.Thisassumes thatthedeviceiswithinthe OperatingRatings.Specificationsarenotensuredforparameterswhere no limitisgiven,however,thetypicalvalueisa good indication ofdeviceperformance. (2) IfMilitary/Aerospacespecifieddevicesarerequired,pleasecontacttheTexas InstrumentsSalesOffice/Distributorsforavailabilityand specifications. (3) Foroperatingatelevatedtemperatures,thedevicemust be deratedbased on a thermalresistanceof115°C/W typjunctiontoambient fortheP package,and 160°C/W typjunctiontoambientfortheD package. (4) Unlessotherwisespecifiedtheabsolutemaximum negativeinputvoltageisequaltothenegativepower supplyvoltage. (5) Human body model,1.5kΩ inserieswith100 pF. Copyright© 1998–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 3 ProductFolderLinks:LF353-N

SNOSBH3F –APRIL 1998–REVISED MARCH 2013 www.ti.com DC ElectricalCharacteristics LF353-N Symbol Parameter Conditions Units MIn Typ Max VOS InputOffsetVoltage R S=10kΩ,TA=25°C 5 10 mV Over Temperature 13 mV ΔVOS /ΔT AverageTC ofInputOffsetVoltage R S=10 kΩ 10 μV/°C IOS InputOffsetCurrent Tj=25°C (1)(2) 25 100 pA Tj≤70°C 4 nA IB InputBiasCurrent Tj=25°C (1)(2) 50 200 pA Tj≤70°C 8 nA R IN InputResistance Tj=25°C 1012 Ω AVOL LargeSignalVoltageGain VS=±15V,TA=25°C 25 100 V/mV VO =±10V,R L=2 kΩ Over Temperature 15 V/mV VO OutputVoltageSwing VS=±15V,R L=10kΩ ±12 ±13.5 V VCM InputCommon-Mode Voltage VS=±15V ±11 +15 V Range −12 V CMRR Common-Mode RejectionRatio R S≤ 10kΩ 70 100 dB PSRR SupplyVoltageRejectionRatio See (3) 70 100 dB IS SupplyCurrent 3.6 6.5 mA (1) These specificationsapplyforVS=±15V and 0°C ≤TA≤+70°C. VOS ,IBand IOS aremeasured atVCM =0. (2) The inputbiascurrentsarejunctionleakagecurrentswhichapproximatelydoubleforevery10°C increaseinthejunctiontemperature, Tj.Due tothelimitedproductiontesttime,theinputbiascurrentsmeasured arecorrelatedtojunctiontemperature.Innormaloperation thejunctiontemperaturerisesabove theambienttemperatureas a resultofinternalpower dissipation,PD .Tj=TA+θjA PD where θjA isthe thermalresistancefromjunctiontoambient.Use ofa heatsinkisrecommended ifinputbiascurrentistobe kepttoa minimum. (3) Supplyvoltagerejectionratioismeasured forbothsupplymagnitudesincreasingordecreasingsimultaneouslyinaccordancewith common practice.VS = ±6V to±15V. AC ElectricalCharacteristics(1) LF353-N Symbol Parameter Conditions Units Min Typ Max AmplifiertoAmplifierCoupling TA=25°C, f=1Hz−20 kHz −120 dB(InputReferred) SR Slew Rate VS=±15V,TA=25°C 8.0 13 V/μs GBW Gain BandwidthProduct VS=±15V,TA=25°C 2.7 4 MHz en EquivalentInputNoiseVoltage TA=25°C, R S=100Ω,f=1000Hz 16 nV/√Hz in EquivalentInputNoiseCurrent Tj=25°C, f=1000Hz 0.01 pA/√Hz THD TotalHarmonicDistortion AV=+10,RL=10k, VO =20Vp−p, <0.02 %BW=20 Hz-20 kHz (1) These specificationsapplyforVS=±15V and 0°C ≤TA≤+70°C. VOS ,IBand IOS aremeasured atVCM =0.

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www.ti.com SNOSBH3F –APRIL 1998–REVISED MARCH 2013 TypicalPerformance Characteristics InputBias Current InputBias Current Figure3. Figure4. Supply Current PositiveCommon-Mode InputVoltageLimit Figure5. Figure6. NegativeCommon-Mode InputVoltageLimit PositiveCurrentLimit Figure7. Figure8. Copyright© 1998–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 5 ProductFolderLinks:LF353-N

SNOSBH3F –APRIL 1998–REVISED MARCH 2013 www.ti.com TypicalPerformance Characteristics(continued) NegativeCurrentLimit VoltageSwing Figure9. Figure10. Output VoltageSwing Gain Bandwidth Figure11. Figure12. Bode Plot Slew Rate Figure13. Figure14.

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www.ti.com SNOSBH3F –APRIL 1998–REVISED MARCH 2013 TypicalPerformance Characteristics(continued) Distortion vs. Frequency UndistortedOutput VoltageSwing Figure15. Figure16. Open Loop Frequency Response Common-Mode RejectionRatio Figure17. Figure18. Power Supply RejectionRatio EquivalentInputNoise Voltage Figure19. Figure20. Copyright© 1998–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 7 ProductFolderLinks:LF353-N

SNOSBH3F –APRIL 1998–REVISED MARCH 2013 www.ti.com TypicalPerformance Characteristics(continued) Open Loop VoltageGain (V/V) Output Impedance Figure21. Figure22. InverterSettlingTime Figure23.

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www.ti.com SNOSBH3F –APRIL 1998–REVISED MARCH 2013 Pulse Response Figure24.Small SignalingInverting Figure25.Large SignalInverting Figure26.Small SignalNon-Inverting Figure27.Large SignalNon-Inverting Copyright© 1998–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 9 ProductFolderLinks:LF353-N

SNOSBH3F –APRIL 1998–REVISED MARCH 2013 www.ti.com Figure28.CurrentLimit(RL = 100Ω)

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www.ti.com SNOSBH3F –APRIL 1998–REVISED MARCH 2013 APPLICATION HINTS These devicesare op amps withan internallytrimmedinputoffsetvoltageand JFET inputdevices(BI-FETII). These JFETs have largereversebreakdown voltagesfrom gate to sourceand draineliminatingthe need for clampsacrosstheinputs.Therefore,largedifferentialinputvoltagescan easilybe accommodated withouta large increaseininputcurrent.The maximum differentialinputvoltageisindependentofthesupplyvoltages.However, neitheroftheinputvoltagesshouldbe allowedtoexceed thenegativesupplyas thiswillcause largecurrentsto flowwhichcan resultina destroyedunit. Exceeding the negativecommon-mode limiton eitherinputwillforcethe outputto a high state,potentially causinga reversalofphase totheoutput.Exceedingthenegativecommon-mode limiton bothinputswillforce the amplifieroutputto a highstate.In neithercase does a latchoccursinceraisingthe inputback withinthe common-mode rangeagainputstheinputstageand thustheamplifierina normaloperatingmode. Exceedingthepositivecommon-mode limiton a singleinputwillnotchange thephase oftheoutput;however,if bothinputsexceed thelimit,theoutputoftheamplifierwillbe forcedtoa highstate. The amplifierswilloperatewitha common-mode inputvoltageequaltothepositivesupply;however,thegain bandwidthand slewratemay be decreasedinthiscondition.When thenegativecommon-mode voltageswings towithin3V ofthenegativesupply,an increaseininputoffsetvoltagemay occur. Each amplifierisindividuallybiasedby a zenerreferencewhich allowsnormalcircuitoperationon ±6V power supplies.Supplyvoltageslessthanthesemay resultinlowergainbandwidthand slewrate. The amplifierswilldrivea 2 kΩ loadresistanceto±10V overthefulltemperaturerange of0°C to+70°C. Ifthe amplifierisforcedtodriveheavierloadcurrents,however,an increaseininputoffsetvoltagemay occuron the negativevoltageswingand finallyreachan activecurrentlimiton bothpositiveand negativeswings. Precautionsshouldbe takentoensurethatthepower supplyfortheintegratedcircuitneverbecomes reversedin polarityorthattheunitisnotinadvertentlyinstalledbackwardsina socketas an unlimitedcurrentsurgethrough theresultingforwarddiodewithintheIC couldcause fusingoftheinternalconductorsand resultina destroyed unit. As withmost amplifiers,careshouldbe takenwithleaddress,component placementand supplydecouplingin ordertoensurestability.For example,resistorsfromtheoutputtoan inputshouldbe placedwiththebody close to the inputto minimize“pick-up” and maximize the frequencyof the feedback pole by minimizingthe capacitancefromtheinputtoground. A feedbackpoleiscreatedwhen the feedbackaround any amplifierisresistive.The parallelresistanceand capacitancefromtheinputofthedevice(usuallytheinvertinginput)toAC groundsetthefrequencyofthepole. Inmany instancesthefrequencyofthispoleismuch greaterthantheexpected3 dB frequencyoftheclosed loopgainand consequentlythereisnegligibleeffecton stabilitymargin.However, ifthefeedbackpoleisless thanapproximately6 timestheexpected3 dB frequencya leadcapacitorshouldbe placedfromtheoutputtothe inputoftheop amp. The valueoftheadded capacitorshouldbe such thattheRC timeconstantofthiscapacitor and theresistanceitparallelsisgreaterthanorequaltotheoriginalfeedbackpoletimeconstant. Copyright© 1998–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 11 ProductFolderLinks:LF353-N

SNOSBH3F –APRIL 1998–REVISED MARCH 2013 www.ti.com DetailedSchematic

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www.ti.com SNOSBH3F –APRIL 1998–REVISED MARCH 2013 TypicalApplications Three-Band ActiveTone Control (1) Allcontrolsflat. (2) Bass and trebleboost,mid flat. (3) Bass and treblecut,mid flat. (4) Mid boost,bass and trebleflat. (5) Mid cut,bass and trebleflat.

  • Allpotentiometersarelineartaper
  • Use theLF347 Quad forstereoapplications Copyright© 1998–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 13 ProductFolderLinks:LF353-N

SNOSBH3F –APRIL 1998–REVISED MARCH 2013 www.ti.com Improved CMRR InstrumentationAmplifier (1) FourthOrder Low Pass ButterworthFilter (2)

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www.ti.com SNOSBH3F –APRIL 1998–REVISED MARCH 2013 FourthOrder High Pass ButterworthFilter (3) Ohms-to-VoltsConverter (4) Copyright© 1998–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 15 ProductFolderLinks:LF353-N

SNOSBH3F –APRIL 1998–REVISED MARCH 2013 www.ti.com

REVISION HISTORY

Changes from RevisionE (March 2013)toRevisionF Page

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