LF347M/NOPB | DigiCamel IC Datasheet

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LF147,LF347-N www.ti.com SNOSBH1D –MAY 1999–REVISED MARCH 2013 LF147/LF347WideBandwidthQuadJFETInputOperationalAmplifiers Check forSamples: LF147,LF347-N 1FEATURES DESCRIPTION The LF147 isa low cost,highspeed quad JFET input 23• InternallyTrimmed OffsetVoltage:5 mV max operationalamplifierwithan internallytrimmed input• Low InputBias Current:50 pA offsetvoltage( BI-FET II™ technology).The device

Low InputNoise Current:0.01pA/√Hz requiresa low supplycurrentand yet maintainsa largegainbandwidthproductand a fastslewrate.In• Wide Gain Bandwidth: 4 MHz addition,well matched high voltage JFET input• High Slew Rate:13 V/μs devices provide very low input bias and offset
Low Supply Current:7.2mA currents.The LF147 is pin compatiblewith the standardLM148. This featureallowsdesignersto• High InputImpedance: 1012Ω immediatelyupgrade the overallperformance of• Low TotalHarmonic Distortion:≤0.02% existingLF148 and LM124 designs.• Low 1/fNoise Corner:50 Hz The LF147 may be used inapplicationssuch as high• FastSettlingTime to0.01%:2 μs speed integrators,fastD/A converters,sample-and- hold circuitsand many othercircuitsrequiringlow inputoffsetvoltage,low inputbiascurrent,highinput impedance,highslew rateand wide bandwidth.The devicehas lownoiseand offsetvoltagedrift. SimplifiedSchematic Connection Diagram ¼ Quad LF147 availableas perJM38510/11906. Figure1. 14-PinPDIP /CDIP /SOIC Top View See Package Number J0014A, D0014A or NFF0014A Pleasebe aware thatan importantnoticeconcerningavailability,standardwarranty,and use incriticalapplicationsof Texas Instrumentssemiconductorproductsand disclaimerstheretoappearsattheend ofthisdatasheet. 2BI-FETIIisa trademarkofdcl_owner. 3Allothertrademarksarethepropertyoftheirrespectiveowners. PRODUCTION DATA informationiscurrentas ofpublicationdate. Copyright© 1999–2013,Texas InstrumentsIncorporatedProductsconform to specificationsper the terms of the Texas Instrumentsstandardwarranty.Productionprocessingdoes not necessarilyincludetestingofallparameters.

LF147,LF347-N SNOSBH1D –MAY 1999–REVISED MARCH 2013 www.ti.com This integratedcircuitcan be damaged by ESD. Texas Instrumentsrecommends thatallintegratedcircuitsbe handled with appropriateprecautions.Failuretoobserveproperhandlingand installationprocedurescan cause damage. ESD damage can rangefromsubtleperformancedegradationtocompletedevicefailure.Precisionintegratedcircuitsmay be more susceptibletodamage because verysmallparametricchanges couldcause thedevicenottomeet itspublishedspecifications. AbsoluteMaximum Ratings (1)(2) LF147 LF347B/LF347 SupplyVoltage ±22V ±18V DifferentialInputVoltage ±38V ±30V InputVoltageRange (3) ±19V ±15V OutputShortCircuitDuration(4) Continuous Continuous Power Dissipation(5)(6) 900 mW 1000 mW Tjmax 150°C 150°C θjA CDIP (J)Package 70°C/W PDIP (NFF)Package 75°C/W SOIC Narrow (D) 100°C/W SOIC Wide (D) 85°C/W OperatingTemperatureRange See (7) See (7) StorageTemperatureRange −65°C ≤TA≤150°C Lead Temperature(Soldering,10 sec.) 260°C 260°C SolderingInformation PDIP /CDIP Soldering(10seconds) 260°C Infrared(15seconds) 220°C ESD Tolerance(8) 900V (1) AbsoluteMaximum Ratingsindicatelimitsbeyond whichdamage tothedevicemay occur.OperatingRatingsindicateconditionsfor whichthedeviceisfunctional,butdo notensurespecificperformancelimits. (2) IfMilitary/Aerospacespecifieddevicesarerequired,pleasecontacttheTISalesOffice/Distributorsforavailabilityand specifications. (3) Unlessotherwisespecifiedtheabsolutemaximum negativeinputvoltageisequaltothenegativepower supplyvoltage. (4) Any oftheamplifieroutputscan be shortedtogroundindefinitely,however,more thanone shouldnotbe simultaneouslyshortedas the maximum junctiontemperaturewillbe exceeded. (5) Foroperatingatelevatedtemperature,thesedevicesmust be deratedbased on a thermalresistanceofθjA. (6) Max. Power Dissipationisdefinedby thepackage characteristics.OperatingthepartneartheMax. Power Dissipationmay cause the parttooperateoutsideensuredlimits. (7) The LF147 isavailableinthemilitarytemperaturerange−55°C ≤TA≤125°C, whiletheLF347B and theLF347 areavailableinthe commercialtemperaturerange0°C ≤TA≤70°C. Junctiontemperaturecan risetoTjmax = 150°C. (8) Human body model,1.5kΩ inserieswith100 pF. DC ElectricalCharacteristics(1)(2) Symbol Parameter Conditions LF147 LF347B LF347 Units Min Typ Max Min Typ Max Min Typ Max VOS InputOffsetVoltage R S=10 kΩ,TA=25°C 1 5 3 5 5 10 mV Over Temperature 8 7 13 mV ΔVOS /Δ AverageTC ofInput R S=10 kΩ 10 10 10 μV/°C T OffsetVoltage IOS InputOffsetCurrent Tj=25°C, (2)(3) 25 100 25 100 25 100 pA Over Temperature 25 4 4 nA IB InputBiasCurrent Tj=25°C, (2)(3) 50 200 50 200 50 200 pA Over Temperature 50 8 8 nA R IN InputResistance Tj=25°C 1012 1012 1012 Ω (1) RefertoRETS147X forLF147D and LF147J militaryspecifications. (2) Unlessotherwisespecifiedthespecificationsapplyoverthefulltemperaturerangeand forVS=±20V fortheLF147 and forVS=±15V for theLF347B/LF347.VOS ,IB,and IOS aremeasured atVCM =0. (3) The inputbiascurrentsarejunctionleakagecurrentswhichapproximatelydoubleforevery10°C increaseinthejunctiontemperature, Tj.Due tolimitedproductiontesttime,theinputbiascurrentsmeasured arecorrelatedtojunctiontemperature.Innormaloperationthe junctiontemperaturerisesabove theambienttemperatureas a resultofinternalpower dissipation,PD .Tj=TA+θjA PD where θjA isthe thermalresistancefromjunctiontoambient.Use ofa heatsinkisrecommended ifinputbiascurrentistobe kepttoa minimum.