LF2810A MACOM | Alldatasheet
Document overview
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Technical content
Features
N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation Common Source Configuration Lower Noise Floor
Applications
Broadband Linear Operation 500‘tiHz to 1200 MHz Absolute Maximum Ratings at 25°C F 6.22 6048 ,245 z?ss G Ll4 1.40 ,045 .055 H 2.92 310 .I15 x5 J L40 1.65 ,055 ,065 K 1.96 2.46 -077 ,097 L 3.61 4.37 642 572 Electrical Characteristics at 25°C Output Capacitance Reverse Capacitance Power Gain Drain Efficiency Load Mismatch Tolerance C ass 10 pF V,,=28.0 V, F=l .O MHz C RSS 4.8 pF V,,=26.0 V, F=l .O MHz GP 10 - dB V,,=28.0 V, I,,=1 00 mA, P,,=lO.O W, F=l .O GHz q0 50 - % V,,=28.0 V, I,,,=1 00 mA, P,,=lO.O W, F=l .O GHz VSWR-T - 2O:l - V,,=28.0 V, I,,=1 00 mA, P,,=lO.O W, F=l .O GHz Specifica!ions Subject to Change Without Notice. 9-74 North America: Tel. (800) 366-2266 D Asia/Pacific: Tel. +81 (03) 3226-1671 Fax (800) 618-8883 Fax +81 (03) 3226-1451 M/A-COM, Inc. n Europe: Tel. +44 (1344) 869 595 Fax +44 (1344) 300 020
RF MOSFET Power Transistor, IOW, 28V LF281 OA v2.w Typical Broadband Performance Curves CAPACITANCES vs VOLTAGE F=l .O MHz GAIN vs FREQUENCY V,,=28 V I,,=100 mA Po,,=lO W iii 500 700 1000 12w FREQUENCY (MHz) POWER OUTPUT vs VOLTAGE F=l.OGHz P,,=l.O W l,o=lOO mA 5 10 15 20 25 30 36 v,, (V) EFFICIENCY vs FREQUENCY 5.5 V,,,=28 V l,o=lOO mA Po,,=l 0 W 500 750 1000 1250 1400 FREQUENCY (MHz) POWER OUTPUT vs POWER OUTPUT V,,=28 V I,,=200 mA 0 0.5 1 1.5 2 2.5 3 POWER INPUT(W) Specifications Subject to Change Without Notice. M/A-COM, Inc. 9-75 North America: Tel. (800) 366-2266 n Asia/Pacific: Tel. +81 (03) 3226-1671 m Europe: Tel. +44 (1344) 869 595 Fax (800) 618-8883 Fax +81 (03) 3226-1451 Fax +44 (1344) 300 020
RF MOSFET Power Transistor, lOW, 28V LF281 OA V2.00 Typical Device Impedance Frequency (MHz) 500 &, (OHMS) ( G,,, (OHMS) 0.60 - j 9.5 10.0 + j 17.0 ( 1000 1 1.4+j 1.0 1 4.85 + j 7.9 ) 1200 1 1.5+ j 3.5 1 5.7 + j 5.7 I ,I V,,=28 V, I,,=1 00. mA, PO,,.=1 0 Watts Z,, is the series equivalent input impedance of the device from gate to source. z LOAD is the optimum series equivalent load impedance as measured from drain to ground. . . RF Test Fixture POWER SUPPL .Y ,015 uf (3 PL> JACK (3 PL> CONNECTOR (2 PL) TURNS OF 18 PlWG (2 PL) SUBSTRATE ,031: Er = 2.54 50 uf @ 50 VOLTS ~ r560 pf ATC (2 PL> r ,130’ \\ t-t- J 1,360’- *1.040’ +-- 2.240’- Specifications Subject to Change Without Notice. 9-76 North America: Tel. (800) 366-2266 n Asia/Pacific: Tel. +81 (03) 3226-1671 Fax (800) 618-8883 Fax +81 (03) 3226-1451 M/A-COM, Inc. n Europe: Tel. +44 (1344) 869 595 Fax +44 (1344) 300 020