LF2805A MACOM | Alldatasheet
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Technical content
Features
N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation Common Source Configuration Lower Noise Floor AppIications . *Broadband Linear Operation
500 MHz to 1400 MHz
Absolute Maximum Ratings at 25°C Electrical Characteristics at 25°C Parameter Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current Gate Threshold Voltage ForwardTransconductance Input Capacitance Output Capacitance Reverse Capacitance Power Gain Drain Efficiency Load Mismatch Tolerance Symbol Min Max Units lest Conditions BV,,, 65 - V V,,=O.O V, 1,,=2.0 mA ‘Dss - 1.0 mA V,,=28.0 V, V,,=O.O V I GSS 1.0 p-4 v,,=20 v, v,,=o.o v V GSCTW 2.0 6.0 V V&O.0 V, l,,=lO.O mA GM 80 - mS V&O.0 V, i&00.0 mA, AVGs=l .O V, 80 us Puke C ISS 7 PF V&8.0 V, F-l.0 MHz C oss 5 PF V,,=28.0 V, F-1 .O MHz C RSS 2.4 pF V,,=28.0 V, F=l .O MHz GP 10 - dB V,,d8.0 V, I,,=50 mA, PO,+0 W, F=l .O GHz ‘1D 50 - % V,,=28.0 V, I,,=50 mA, P,s5.0 W, F=l .O GHz VSWR-T - 2O:l - V,,=28.0 V, I,,=50 mA, P,&%O W, F=l .O GHz Specifications Subject to Change Without Notice. M/A-COM, Inc. 9-71 North America: Tel. (800) 366-2266 m Asia/Pacific: Tel. +81 (03) 3226-1671 8 Europe: Tel. +44 (1344) 869 595 Fax (800) 618-8883 Fax +81 (03) 3226-1451 Fax +44 (1344) 300 020
RF MOSFET Power Transistor, 5W, 28V LF2805A v2.00 Typical Broadband Performance Curves CAPACITANCES vs VOLTAGE POWER OUTPUT vs VOLTAGE F=l .O MHz F=l .O GHz P,,=O.5 W I,,=50 mA 7 7 6 - GAIN vs FREQUENCY s 210 z 5 - 500 700 1000 1400 FREQUENCY (MHz) EFFICIENCY vs FREQUENCY V,,=28 V I,,=50 mA P,,=5.0 W 500 750 1000 1250 1400 FREQUENCY (MHz) POWER OUTPUT vs POWER OUTPUT V,,=28 V I,,=50 mA I;- p-p= 3 2- 0 0.05 02 0.4 0.6 0.6 1 POWER INPUT (W) Specifications Subject to Change Without Notice. 9-72 North America: Tel. (800) 366-2266 D Asia/Pacific: Tel. +81 (03) 3226-1671 Fax (800) 618-8883 Fax +81 (03) 3226-1451 M/A-COM, Inc. n Europe: Tel. +44 (1344) 869 595 Fax +44 (1344) 300 020
RF MOSFET Power Transistor, 5W. 28V LF2805A v2.00 Typical Device Impedance Frequency (MHz) 500 1000 1400 q,, (OHMS) z LOAD (OHMS) 4.3 - j 29.0 27.3 + j 28.6 2.2 - j 2.75 8.0 + j 16.0 v,,=28 V, iDo= mA, P,,=5.0 Watts Z,, is the series equivalent input impedance of the device from gate to source. z, OAB $ the optimum series equivalent load impedance as measured from drain to ground. RF Test Fixture POWER SUPPLY JACK <3 PLACES) 7 r ,015 uf (4 PLACES> SUBS1 RATE .031’ THICK, Er = 2.54 LlK OHMS l/8 WATT
50 OHM RF CUNNECTOR 10 TURNS UF 18 AWG WIRE (2 PLACES)
L- ,180 I- 1.740 L-560 pf Specifications Subject to Change Without Notice. M/A-COM, Inc. 9-73 North America: Tel. (800) 366-2266 n Asia/Pacific: Tel. +81 (03) 3226-1671 n Europe: Tel. +44 (1344) 869 595 Fax (800) 618-8883 Fax +81 (03) 3226-1451 Fax +44 (1344) 300 020