LF2802A MACOM | Alldatasheet
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‘an AMP company . , RF MOSFETPower Transistor, 2W, 28V 500 - 1000 MHz LF2802A i v2.00 Features > * N-Channel Enhancement Mode Device r ¢ DMOS Structure | (| D ¢ Lower Capacitances for Broadband Operation ¢ Common Source Configuration tte BS 4 © Lower Noise Floor S * Applications | Ig Broadband Linear Operation aL
500 MHz to 1400 MHz
A x ———— Absolute Maximum Ratings at 25°C 4 — [Parameter | Symbol [Rating | units] cm anes ee] [ DrsinSoucevorage [Vs | 6 | V_ | i [eae savervouge [ve | =|] Paar Pasa [ae [aisoocacorer | te [07 [| Ts Pies fos To [PeverDaspaion | fs | 8 | W | [ef we fee | oe | 2 | [ieaertenpente | t | #0 | | p> fee Peet H [ StorageTemperawre [Tae | s5to+1580 | °c | [+ | eze | exe [20s [ass | [[TremaiResistance |e. [218 | “ow | [oe [ise [tao [oes [ass | [ow [ese [ae [us [aes | [so [wo [ses [oss [ccs | [x [ise [ene | o77 | o7_| poe [ae [as | see [ave | Pow fe fas | tos] 06 | Electrical Characteristics at 25°C [pansoreSenamnvonne [Sm [@ | |v [aeons FpanssvertomapeCoren [igs |] o# [ ow [vgrowvgeoay [arsroestasgrcuron [Tee [=f 08 | om [varvvssoy [eateThreshoisVotage | Voum | 20 | 60 | V |Voert00V.Ia50mA | imectawoamme |e [© | [os [vray genom ngeiou oma | a | Sapstaperes | ean a | geo ionme | peeseceemnes [ear 8 Lm [gems rome a a {satan Toomee [vows [ [i | [vgn vignasra Parton roars | ‘Specifications Subj Chany Notice. ggg recmontons Stier tocrangewreuee WACOM, Inc. North America: Tel. (800) 366-2266 = Asia/Pacific: Tel. +81 (03) 3226-1671 = Europe: Tel. +44 (1344) 869 595 Fax (800) 618-8883 Fax +81 (03) 3226-1451 Fax +44 (1344) 300 020
RF MOSFET Power Transistor, 2W, 28V LF2802A 2.00 Typical Broadband Performance Curves CAPACITANCES vs VOLTAGE POWER OUTPUT vs VOLTAGE 5 F=1.0 MHz 3 Fe1.0 GHz P,,=0.2 W 1,225 mA ———— g° C, = = ss 3 2 & = Ba ‘ | Cass. & ° 0 s 10 15 20 25 x” 5 10 15 20 25 30 3 Vos (V) Vos (V) GAIN vs FREQUENCY EFFICIENCY vs FREQUENCY 20 Vp9228 V lpg=25.0 MA Poyr=2.0 W « Vop=28 V tyq=25.0 MA Pou 7=2.0 W 18 a = = I s > 5 "99 ° 36 500 700 1000, 1400 500 750 1000, 1250 1400 FREQUENCY (MHz) FREQUENCY (MHz) POWER OUTPUT vs POWER OUTPUT ‘ Vp5=28 V 1,225.0 MA Es 500 MHz, 1000 MHz 52 1400 MHz E © 0.05 On 02 03 04 0s POWER INPUT (W) - Continued next page - ‘Specifications Subject to Change Without Notice. North America: Tel. (800) 366-2266 m= Asia/Pacific: Tel. +81 (03) 9226-1671 = Europe: Tel. +44 (1344) 869 595 Fax (800) 618-8883 Fax +81 (03) 3226-1451 Fax +44 (1344) 300 020
RF MOSFET Power Transistor, 2W, 28V LF2802A js UU EEE need 2.00 Typical Device Impedance Frequency (MHz) Z,, (OHMS) Z,oap (OHMS) Vop228 V, Ipg=25 MA, Poy 7=2.0 Watts Z, is the series equivalent input impedance of the device from gate to source. Z.oap is the optimum series equivalent load impedance as measured from drain to ground. RF Test Fixture POWER SUPPLY JACK (3 PLACES) 01S uf (4 PLACES) 11K OHMS 1/8 WATT SUBSTRATE 031’ THICK, er = 2.54
50 OHM RF CONNECTOR 10 TURNS OF 18 AWG WIRE (2 PLACES)
<2 PLACES) LL RU re tL Cb a | | 70 415 a | LIN = 530 799 ST INPUT / | OUTPUT 560 pf 560 pF 620 f= ~-1.000: | 200 | .300 1130--| soo lel 180 1.740 —| 200 Specifications Subject to Change Without Notice. North America: Tel. (800) 366-2266 2 Asia/Pacific: Tel. +81 (03) 3226-1671 . Europe: Tel. +44 (1344) 869 595 Fax (800) 618-8883 Fax +81 (03) 3226-1451 Fax +44 (1344) 300 020