LF2802A MA-COM | Alldatasheet

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RF Power MOSFET Transistor 2W, 500-1000MHz, 28V M/A-COM Products Released; RoHS Compliant LF2802A

  • North America Tel: 800.366.2266 / Fax: 978.366.2266 Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. Package Outline Features
  • N-Channel enhancement mode device
  • DMOS structure
  • Lower capacitances for broadband operation
  • Common source configuration
  • Lower noise floor
  • Applications Broadband linear operation

500 MHz to 1400 MHz

ABSOLUTE MAXIMUM RATINGS AT 25° C Parameter Rating Drain-Source Voltage 65 Gate-Source Voltage 20 Drain-Source Current 0.7 Power Dissipation 8 Junction Temperature 200 Storage Temperature -55 to +150 Thermal Resistance 21.8 Symbol VDS VGS IDS PD TJ TSTG θJC Units V V A W °C/W ELECTRICAL CHARACTERISTICS AT 25°C Parameter Symbol Min Max Units Test Conditions Drain-Source Breakdown Voltage BVDSS 65 - V VGS = 0.0 V , IDS = 1.0 mA Drain-Source Leakage Current IDSS - 0.5 mA VGS = 28.0 V , VGS = 0.0 V Gate-Source Leakage Current IGSS - 0.5 µA VGS = 20.0 V , VDS = 0.0 V Gate Threshold Voltage VGS(TH) 2.0 6.0 V VDS = 10.0 V , IDS = 5.0 mA Forward Transconductance GM 40 - mS VDS = 28.0 V , IDS = 50.0 mA , Δ VGS = 1.0V, 80 μs Pulse Input Capacitance CISS - 3.5 pF VDS = 28.0 V , F = 1.0 MHz Output Capacitance COSS - 3.75 pF VDS = 28.0 V , F = 1.0 MHz Reverse Capacitance CRSS - 1.2 pF VDS = 28.0 V , F = 1.0 MHz Power Gain GP 10 - dB VDD = 28.0 V, IDQ = 25 mA, POUT = 2.0 W F =1.0 GHz Drain Efficiency ŋD 40 - % VDD = 28.0 V, IDQ = 25 mA, POUT = 2.0 W F =1.0 GHz Load Mismatch Tolerance VSWR-T - 20:1 - VDD = 28.0 V, IDQ = 25 mA, POUT = 2.0 W F =1.0 GHz LETTER MILLIMETERS INCHES DIM MIN MAX MIN MAX A 20.70 20.96 .815 .825 B 14.35 14.61 .565 .575 C 13.72 14.22 .540 .560 D 6.27 6.53 .247 .257 E 6.22 6.48 .245 .255 F 6.22 6.48 .245 .255 G 1.14 1.40 .045 .055 H 2.92 3.18 .115 .125 J 1.40 1.65 .055 .065 K 1.96 2.46 .077 .097 L 3.61 4.37 .142 .172 M .08 .15 .003 .006 F (MHz) ZIN (Ω) ZLOAD (Ω) 500 10.0 - j41.5 40.0 +j53.0 1000 4.2 - j12.0 11.85 + j33.0 1400 3.5 - j1.0 7.5 + j23.3 VDD = 28V, IDQ = 25mA, POUT = 2.0 W TYPICAL DEVICE IMPEDANCE ZIN is the series equivalent input impedance of the device from gate to source. ZLOAD is the optimum series equivalent load impedance as measured from drain to ground.

RF Power MOSFET Transistor 2W, 500-1000MHz, 28V M/A-COM Products Released; RoHS Compliant LF2802A

  • North America Tel: 800.366.2266 / Fax: 978.366.2266 Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. Typical Broadband Performance Curves VDS (V) POWER OUTPUT VS VOLTAGE F =1.0GHz PIN=2.0 W IDQ=25 mA POWER OUTPUT VS POWER INPUT VDD =28 V IDQ =25.0 mA POWER OUTPUT (W) POWER OUTPUT (W) 0.05 0.2 POWER INPUT (W)

1000 MHz

0.1 0.5 0.3

1400 MHz

VDD =28 V IDQ =25.0 mA Pout =2.0 W EFFICIENCY (%) 750 1250 FREQUENCY (MHz) 1000 500 0.4 FREQUENCY (MHz) GAIN (dB) GAIN VS FREQUENCY VDD=28 V IDQ=25.0 mA POUT=2.0 W 500 1000 700 1400 VPS (v) CAPACITANCE (pF) CAPACITANCES VS VOLTAGE F =1.0MHz 5 15 25 10 20 30 COSS CISS CRSS 30 25 35 1400

RF Power MOSFET Transistor 2W, 500-1000MHz, 28V M/A-COM Products Released; RoHS Compliant LF2802A

  • North America Tel: 800.366.2266 / Fax: 978.366.2266 Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. TEST FIXTURE CIRCUIT DIMENSIONS TEST FIXTURE ASSEMBLY