LCE6.5 ETC2 | Alldatasheet

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Features

 Breakdown Voltages (VBR)from 6.5 to 170V  1500W peak pulse power capability with a 10/1000μs waveform, repetitive rate (duty cycle):0.01%  Low capacitance  Fast Response Time  Excellent clamping capability  High temperature soldering guaranteed: 265℃ /10 seconds, 0.375” (9.5mm) lead length, 5lbs. (2.3kg) tension Application  Use in sensitive electronics protection against voltage transients induced by inductive load switching and lighting on ICS, MOSFE, signal lines of sensor units for consumer, computer, industrial, automotive and telecommunication Mechanical Data  Case: Void-free transfer molded thermosetting epoxy body meeting UL94V-O  Terminals: Tin-Lead or ROHS Compliant annealed matte-Tin plating readily solderable per MIL-STD-750, Method 2026  Marking: Part number and cathode band  Polarity: Cathode indicated by band  Weight: 1.2g（Approximately） CASE: DO-204AL (DO-27) Dimensions in inches and (millimeters) 打印无效

LCE6.5 thru LCE170A Document Number: LCE6.5 thru LCE170A www.smsemi.com Feb.29, 2012 2 Microsemi Part Number Breakdown Voltage VBR @ IBR Reverse Stand Off Voltage Maximum Standby current ID @ VWM Maximum Peak Pulse Current IPP @ 10/ 1000µ s Maximum Clamping Voltage VC @ IPP Maximum Capacitance @ 0V f=1MHZ Working Inverse Blocking Voltage IIIB @VWIB Peak Inverse Blocking Voltage MIN MAX IBR (mA) VBR(V) VWM(V) ID(µA) IPP (A) VC(V) pF VWIB(V) IIB(μA) VPIB(V) LCE6.5 LCE6.5A LCE7.0 LCE7.0A 7.22 7.22 7.78 7.78 8.82 7.98 9.51 8.60 6.5 6.5 7.0 7.0 1000 1000 500 500 100.0 100.0 100.0 100.0 12.3 11.2 13.3 12.0 100 100 100 100 100 100 100 100 LCE7.5 LCE7.5A LCE8.0 LCE8.0A 8.33 8.33 8.89 8.89 10.2 9.21 10.9 9.83 7.5 7.5 8.0 8.0 250 250 100 100 100.0 100.0 100.0 100.0 14.3 12.9 15.0 13.6 100 100 100 100 100 100 100 100 LCE8.5 LCE8.5A LCE9.0 LCE9.0A 9.44 9.44 10.0 10.0 11.5 10.4 12.2 11.1 8.5 8.5 9.0 9.0 94.0 100.0 89.0 97.0 15.9 14.4 16.9 15.4 100 100 100 100 100 100 100 100 LCE10 LCE10A LCE11 LCE11A 11.1 11.1 12.2 12.2 13.6 12.3 14.9 13.5 10.0 10.0 11.0 11.0 80.0 88.0 74.0 82.0 18.8 17.0 20.1 18.2 100 100 100 100 100 100 100 100 LCE12 LCE12A LCE13 LCE13A 13.3 13.3 14.4 14.4 16.3 14.7 17.6 15.9 12.0 12.0 13.0 13.0 68.0 75.0 63.0 70.0 22.0 19.9 23.8 21.5 100 100 100 100 100 100 100 100 LCE14 LCE14A LCE15 LCE15A 15.6 15.6 16.7 16.7 19.1 17.2 20.4 18.5 14.0 14.0 15.0 15.0 58.0 65.0 56.0 61.0 25.8 23.2 26.9 24.4 100 100 100 100 100 100 100 100 LCE16 LCE16A LCE17 LCE17A 17.8 17.8 18.9 18.9 21.8 19.7 23.1 20.9 16.0 16.0 17.0 17.0 52.0 57.0 49.0 54.0 28.8 26.0 30.5 27.6 100 100 100 100 100 100 100 100 LCE18 LCE18A LCE20 LCE20A 20.0 20.0 22.2 22.2 24.4 22.1 27.1 24.5 18.0 18.0 20.0 20.0 46.0 51.0 42.0 46.0 32.2 29.2 35.8 32.4 100 100 100 100 100 100 100 100 LCE22 LCE22A LCE24 LCE24A 24.4 24.4 26.7 26.7 29.8 26.9 32.6 29.5 22.0 22.0 24.0 24.0 38.0 42.0 35.0 39.0 39.4 35.5 43.0 38.9 100 100 100 100 100 100 100 100 LCE26 LCE26A LCE28 LCE28A 28.9 28.9 31.1 31.1 35.3 31.9 38.0 34.4 26.0 26.0 28.0 28.0 32.0 36.0 30.0 33.0 46.6 42.1 50.0 45.4 100 100 100 100 100 100 100 100 LCE30 LCE30A LCE33 LCE33A 33.3 33.3 36.7 36.7 40.7 36.8 44.9 40.6 30.0 30.0 33.0 33.0 28.0 31.0 25.4 28.1 53.5 48.4 58.0 53.3 100 100 100 100 100 100 100 100 LCE36 LCE36A LCE40 LCE40A 40.0 40.0 44.4 44.4 48.9 44.2 54.3 49.1 36.0 36.0 40.0 40.0 23.3 25.8 21.0 23.0 64.3 58.1 71.4 64.5 100 100 100 100 100 100 100 100 LCE43 LCE43A LCE45 LCE45A 47.8 47.8 50.0 50.0 58.4 52.8 61.1 55.3 43.0 43.0 45.0 45.0 19.5 21.6 18.7 20.6 76.7 69.4 80.3 72.7 100 100 100 100 150 150 150 150 200 200 200 200 LCE48 LCE48A LCE51 LCE51A 53.3 53.3 56.7 56.7 65.1 58.9 69.3 62.7 48.0 48.0 51.0 51.0 17.5 19.4 16.5 18.2 85.5 77.4 91.1 82.4 100 100 100 100 150 150 150 150 200 200 200 200 打印无效

LCE6.5 thru LCE170A Document Number: LCE6.5 thru LCE170A www.smsemi.com Feb.29, 2012 3 Note1: A transient voltage suppressor is normally selected according to voltage (VWM), which should be equal to or greater than the dc or continuous peak operating voltage level. Characteristic Curve Microsemi Part Number Breakdown Voltage VBR @ IBR Reverse Stand Off Voltage Maximum Standby current ID @ VWM Maximum Peak Pulse Current IPP @ 10/ 1000µs Maximum Clamping Voltage VC @ IPP Maximum Capacitance @ 0V f=1MHZ Working Inverse Blocking Voltage IIIB @VWIB Peak Inverse Blocking Voltage MIN MAX IBR (mA) VBR(V) VWM(V) ID(µA) IPP (A) VC(V) pF VWIB(V) IIB(μA) VPIB(V) LCE54 LCE54A LCE58 LCE58A 60.0 60.0 64.4 64.4 73.3 66.3 78.7 71.2 54.0 54.0 58.0 58.0 15.6 17.2 14.6 16.0 96.3 87.1 103.0 93.6 100 100 100 100 150 150 150 150 200 200 200 200 LCE60 LCE60A LCE64 LCE64A 66.7 66.7 71.1 71.1 81.5 73.7 86.9 78.6 60.0 60.0 64.0 64.0 14.0 15.5 13.2 14.6 107.0 96.8 114.0 103.0 150 150 150 150 200 200 200 200 LCE70 LCE70A LCE75 LCE75A 77.8 77.8 83.3 83.3 95.1 86.0 102 92.1 70.0 70.0 75.0 75.0 12.0 13.3 11.2 12.4 125.0 113.0 134.0 121.0 150 150 150 150 200 200 200 200 LCE80 LCE80A LCE90 LCE90A 88.7 88.7 100 100 108 98.0 122 111 80.0 80.0 90.0 90.0 10.6 11.6 9.4 10.3 142.0 129.0 160.0 146.0 150 150 300 300 200 200 200 200 LCE100 LCE100A LCE110 LCE110 111 111 122 122 136 123 149 135 100.0 100.0 110.0 110.0 8.4 9.3 7.7 8.4 179.0 162.0 196.0 178.0 300 300 300 300 200 200 400 400 LCE120 LCE120A LCE130 LCE130A 133 133 144 144 163 147 176 159 120.0 120.0 130.0 130.0 7.0 7.8 6.5 7.2 214.0 193.0 231.0 209.0 300 300 300 300 400 400 400 400 LCE150 LCE150A LCE160 LCE160A 167 167 178 178 204 185 218 197 150.0 150.0 160.0 160.0 5.6 6.2 5.2 5.8 268.0 243.0 287.0 259.0 300 300 300 300 400 400 400 400 LCE170 LCE170A 189 189 231 209 170.0 170.0 4.9 5.4 304.0 275.0 300 300 400 400 Fig. 1 Peak Pulse Power vs. Pulse Time Fig.2 Pulse Waveform for Exponential Surge PPP - Peak Pulse Power (kW) 100 1.0 0.1 0.1 1.0 10 102 103 tw-Pulse Width (µs) 0 1.0 2.0 3.0 4.0 t-Time (ms) tr=10µs Peak Value IPP Half Value IPP 10/1000µs Waveform as defined by R.E.A. 150 100 IPP - Peak Pulse Current - % IPP Impulse Exponential Decay 1.0 0.5 IPP IPP tW tW tW=0.71p tp Half Sine Square Wave Current Waveforms tW 打印无效

LCE6.5 thru LCE170A Document Number: LCE6.5 thru LCE170A www.smsemi.com Feb.29, 2012 4 Schematic Applications The TVS low capacitance device configuration is shown in Fi g.4. As a further option for unidirectional applications, an additional low capacitance rectifier diode may be used in paralle l in the sane polarity direction as the TVS as shown in Fig.5. In applications where random high voltage transients occur, this will prevent reverse transients from damaging the internal low capacitance rectifier diode and also prov ide a low voltage conducting direction. The added rectifier diode should be of similar low capacit ance and also have a higher reverse voltage rating than the TVS clamping voltage V C. If using two (2) low capacitance TVS devices in also provided. The unidirectional and bidirectional configurations in Fig.5 and 6 will both in twice the capacitance of Fig.4 Fig.3 Derating Curve 100 PPP-Peak Pulse Power or continuous Average Power in Percent of 25 ℃ (%) Peak Pulse Power (Single pulse). Average Power 0 50 100 150 200 Lead or Ambient Temperature (℃) TVS DIODE IN OUT Fig.4 TVS with internal Low Capacitance Diode Fig.5 Optional Unidirectional configuration (TVS and separate rectifier diode in parallel) Fig.6 Optional Bidirectional configuration (two TVS and devices in anti-parallel) 打印无效