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Error correction capability improved by soft-decision error correction The load on the control micropro cessor can be reduced by storing decoded data in the on-chip data buffer RAM. Two synchronization detection circuits provide continuous and stable detection of the synchronization. Data can be read out starting with the backward-protection block data after a synchronization reset. Fully adjustment free Specifications Operating power-supply voltage : 4.5 to 5.5 V Operating temperature : 40 to +85C Package : MFP24 (375 mil) SOIC24 W / MFP24 (375 mil)
www.onsemi.com Specifications Absolute Maximum Ratings at Ta = 25C, Vssd = Vssa = 0 V Parameter Symbol Pin Name Ratings Unit Maximum supply voltage Vddmax Vddd, Vdda 0.3 to +7.0 V Maximum input voltage Vin1max CL, DI, CE, SYR, T1, T2, T3, T4, T5, T6, T7, SYNC 0.3 to +7.0 V Vin2max XIN 0.3 to Vddd+0.3 V Vin3max MPXIN, CIN 0.3 to Vdda+0.3 V Maximum output voltage Vo1max DO, SYNC, RDS-ID, T3, T4, T5, T6, T7 0.3 to +7.0 V Vo2max XOUT 0.3 to Vddd+0.3 V Vo3max FLOUT 0.3 to Vdda+0.3 V Maximum output current Io1max DO, T3, T4, T5, T6, T7 +6.0 mA Io2max XOUT, FLOUT +3.0 mA Io3max SYNC, RDS-ID +20.0 mA Allowable power dissipation Pdmax (Ta 85C) 175 mW Operating temperature Topr 40 to +85 C Storage temperature Tstg 55 to +125 C Allowable Operating Ranges at Ta = 40 to 85C, Vssd = Vssa = 0 V Parameter Symbol Pin Name Conditions Ratings Unit min typ max Supply voltage Vdd1 Vddd, Vdda 4.5 5.0 5.5 V Vdd2 Vddd Serial data hold voltage 2.0 V Input high-level voltage VIH CL, DI, CE, SYR, T1, T2 0.7Vddd 6.5 V Input low-level voltage VIL CL, DI, CE, SYR, T1, T2 0 0.3Vddd V Output voltage VO DO, SYNC, RDS-ID, T3, T4, T5, T6, T7 6.5 V Input amplitude VIN1 MPXIN f = 57 2 kHz 50 mVrms VIN2 100% modulation composite 100 mVrms VXIN XIN 400 1500 mVrms Guaranteed crystal Oscillator frequencies XTAL XIN, XOUT CI 120 Ω (XS = 0) 4.332 MHz CI 70 Ω (XS = 1) 8.664 MHz Crystal oscillator frequency deviation TXtal XIN, XOUT fo = 4.332 MHz, 8.664 MHz 100 ppm Data setup time tSU DI, CL 0.75 s Data hold time tHD DI, CL 0.75 s Clock low level time tCL CL 0.75 s Clock high level time tCH CL 0.75 s CE wait time tEL CE, CL 0.75 s CE setup time tES CE, CL 0.75 s CE hold time tEH CE, CL 0.75 s CE high-level time tCE CE 20 ms Data latch change time tLC 1.15 s Data output time tDC DO,CL Differs depending on the value of the pull-up resistor used. 0.46 s tDH DO,CE 0.46 s Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recomme nded Operating Ranges limits mayaffect device reliability.
www.onsemi.com Electrical Characteristics at Ta = 40 to 85C, Vssd = Vssa = 0 V Parameter Symbol Pin Name Conditions Ratings Unit min typ max Input resistance RMPXIN MPXIN-Vssa f = 57 kHz 43.0 k Ω Rcin CIN-Vssa f = 57 kHz 100.0 k Ω Internal feedback resistance Rf XIN 1.0 M Ω Center frequency fc FLOUT 56.5 57.0 57.5 kHz 3 dB band width BW-3dB FLOUT 2.5 3.0 3.5 kHz Gain Gain MPXIN-FLOUT f = 57 kHz 28 31 34 dB Stop band Attenuation Att1 FLOUT f = 7 kHz 30 dB Att2 FLOUT f < 45 kHz, f > 70 kHz 40 dB Att3 FLOUT f < 20 kHz 50 dB Reference voltage output Vref Vref Vdda = 5.0 V 2.5 V Hysteresis VHIS CL, DI, CE, SYR, T1, T2 0.1Vddd V Output low-level voltage VOL1 DO, T3, T4, T5, T6, T7 I = 2 mA 0.5 V VOL2 SYNC, RDS-ID I = 8 mA 0.5 V Input high-level current I IIH1 CL, DI, CE, SYR, T1, T2 VI = Vddd 5.0 A I IIH2 XIN VI = Vddd 2.0 11.0 A Input low-level current I IIL1 CL, DI, CE, SYR, T1, T2 VI = 0 V 5.0 A I IIL2 XIN VI = 0 V 2.0 11.0 A Output off leakage current I IOFF DO, SYNC, RDS-ID, T3, T4, T5, T6, T7 VO = 6.5 V 5.0 A Current drain Idd Vddd, Vdda 9 mA Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product per formance may not be indicated by the Electrical Characteristics if operated under different conditions.
www.onsemi.com Package Dimensions unit : mm SOIC24 W / MFP24 (375 mil) CASE 751CF ISSUE A SOLDERING FOOTPRINT* NOTE: The measurements are not to guarantee but for reference only. *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. (Unit: mm) 9.75 0.52 1.15 1.27 XXXXX = Specific Device Code Y = Year M = Month DDD = Additional Traceability Data GENERIC MARKING DIAGRAM* *This information is generic. Please refer to device data sheet for actual part marking. XXXXXXXXXX YMDDD to
www.onsemi.com Pin Assignment Block Diagram VREF MPXIN Vdda Vssa FLOUT CIN T3 (RDCL) T4 (RDDA) T5 (RSFT) XOUT LC72722PM Top view SYR CE DI CL DO RDS-ID SYNC T7 (CORREC/ARI-ID/TA/BEO) T6 (ERROR/57K/TP/BE1) Vssd Vddd XIN Vdda Vssa MPXIN REFERENCE VOLTAGE ANTIALIASING FILTER VREF 57kHz BPF (SCF) SMOOTHING FILTER FLOUT CIN VREF PLL (57kHz) CLOCK RECOVERY (1187.5Hz) DATA DECODER Vddd +5.0V Vssd RDS-ID SYNC/EC CONTROLLER SYNC SYR CCB TEST DO CL DI CE T3 to T7 RAM (24 BLOCK DATA) ERROR CORRECTION (SOFT DECISION) MEMORY CONTROL OSC/DIVIDER CLK (4.332MHz) XIN XOUT SYNC DETECT-1 SYNC DETECT-2 +5.0V
www.onsemi.com Pin Functions Pin No. Pin name Function I/O Pin circuit
1 VREF Reference voltage output (Vdda/2) Output
2 MPXIN Baseband (multiplexed) signal input Input
5 FLOUT Subcarrier output (filter output) Output
7 CIN Subcarrier input (comparator input) Input
3 Vdda Analog system power supply (+5V)
4 Vssa Analog system ground
12 XOUT Crystal oscillator output (4.332/8.664MHz) Output
13 XIN Crystal oscillator input (external reference signal input)
7 T1 Test input (This pin must always be connected to ground.) 8 T2 Test input (standby control) 0:Normal operation, 1:Standby state (crystal oscillator stopped)
9 T3(RDCL) Test I/O (RDS clock output)
I/O*
10 T4(RDDA) Test I/O (RDS data output)
11 T5(RSFT) Test I/O (soft-de cision control data output)
(ERROR/57K/BE1) Test I/O (error status, regenerated carrier, error block count) (CORREC/ARI-ID/BE0) Test I/O (error correction status, SK detection, error block count)
18 SYNC Block synchronization detection output
19 RDS-ID RDS detection output
20 DO Data output
21 CL Clock input
24 SYR Synchronization and RAM address reset (active high)
14 Vddd Digital system power supply (+5V)
15 Vssd Digital system ground
Note : * Normally function as an output pin. Used as an I/O pin in test mode, which is not available to user applications. Serial data interface (CCB) Vdda Vdda Vdda Vddd VREF Vssa Vssa Vssd Vssa XOUT XIN Vssd Vssd S Vssd S Vssd
www.onsemi.com CCB output data format 1. Each block of output data consists of 32 bits (4 bytes), of which 2 bytes are RDS data and 2 bytes are flag data. 2. Any number of 32-bits output data blocks can be output consecutively. 3. When there is no data that can be read out in the internal memory, the system outputs blocks of all-zero data consecutively. 4. If data readout is interrupted, the next read operation starts with the 32-bit data block whose readout was interrupted. However, if only the last bit is remaining to be read, it will not be possible to re-read that whole block. 5. The check bits (10 bits) are not output. 6. The data valid (OWD) must not be referred to. 7. When the first leading bits are not “1010”, the read in data is in invalid, and read operation is cancelled. (1) Offset word detection flag (1bit) : OWD OWD Offset word detection
1 Detected
0 Not detected (protection function operating)
(2) Offset word information flag (3bit) : B0 to B2 B B B
0 Offset word
0 1 1 C’ 1 0 0 D 1 0 1 E 1 1 0 Unused 1 1 1 Unused DI DO B 1010 O W D R F R F A R I S Y C D D D D D D B E E E D D D D D D D D D D B B R E 0110110 B B B A A A A CCB address 6C Output data / first bit Last bit (8) RDS data (7) Error information flags (6) Synchronization established flag (5) ARI(SK) detection flag (4) RAM data remaining flags (3) Consecutive RAM read out possible flag (2) Offset word information flags (1) Offset word detection flag Fixed pattern (1010)
www.onsemi.com (3) Consecutive RAM read out possible flag (1bit) : RE RE RAM data information
1 The next data to be read out is in RAM
0 This data item is the last item in RAM, ant the next data is not present. (4) RAM data remaining flag (2bits) : RF0,RF1 RF1 RF0 Remaining data in RAM (number of blocks) 0 0 1 to 7 0 1 8 to 15 1 0 16 to 23 1 1 24 Caution : This value is only meaningful when RE is 1. When RE is 0, there is no data in RAM, even if RF is 00. If a synchronization reset was applied using SYR, then the backward protection block data that was written to memory is also counted in this value. (5) ARI(SK) detection flag (1bit) : ARI ARI SK signal
0 Not detected
(6) Synchronization established flag (1bit) : SYC SYC Synchronization detection
1 Synchronized
0 Not synchronized
Caution : This flag indicates the synchronization state of the circuit at the point when the data block being output was received. On the other hand, the SYNC pin (pin18) output indicates the current synchronization state of the circuit. (7) Error information flags (3bits) : E0 to E2 E E E
0 Number of bits corrected
0 0 0 0 (no errors) 0 0 1 1 0 1 0 2 0 1 1 3 1 0 0 4 1 0 1 5 1 1 0 Correction not possible 1 1 1 Unused Caution : If the number of errors exceeds the value of the EC0 to EC2 setting (see the section on the CCB input format), the error information flags will be set to the “Correction not possible” value. (8) RDS data (16bits) : D0 to D15 This data is output with the MSB first ant the LSB last. Caution : When error correction was not possible, the input data is output without change.
www.onsemi.com CCB Input data format (1) Synchronization protection (forward protection) method setting (4bits) : FS0 to FS3 FS3 = 0 : If offset words in the correct order could not be detected continuously during the number of blocks specified by FS0 to FS2, take that to be a lost synchronization sate. FS3 = 1 : If blocks with uncorrectable errors were received consecutively during the number of blocks specified by FS0 to FS2, take that to be a lost synchronization state. F S F S F S Condition for detecting lost synchronization 0 0 0 If 3 consecutive blocks matching the FS3 condition are received. 1 0 0 If 4 consecutive blocks matching the FS3 condition are received. 0 1 0 If 5 consecutive blocks matching the FS3 condition are received. 1 1 0 If 6 consecutive blocks matching the FS3 condition are received. 0 0 1 If 8 consecutive blocks matching the FS3 condition are received. 1 0 1 If 10 consecutive blocks matching the FS3 condition are received. 0 1 1 If 12 consecutive blocks matching the FS3 condition are received. 1 1 1 If 16 consecutive blocks matching the FS3 condition are received. Initial value : FS0 = 0, FS1 = 1, FS2 = 0, FS3 = 0 (2) Synchronization detection method setting (1bit) : BS BS Synchronization detection conditions 0 If during 3 blocks, 2 blocks of offset words were detected in the correct order. 1 If the offset words were detected in the correct order in 2 consecutive blocks. Initial value : BS = 0 DI B B B B A A A A [1] CCB address 6A F S F S F S F S B S S Y R O W E E C E C E C E C E C C T (12) Circuit control (5) Error correction method setting (4) RAM write control (3) Synchronization and RAM address reset (2) Synchronization detection method setting (1) Synchronization protection method setting IN1 data, first bit DI B B B B A A A A [2] CCB address 6B C T S P S P X S P L P L P T P T P T T S T S T S (11) Test mode settings (10) Output pin settings (9) RDS/RBDS selection (8) Demodulation circuit phase control (7) Crystal oscillator frequency selection (12) Circuit control IN2 data, first bit R M T S Caution : The bits labeled with an asterisk must be set to 0. (6) Intermittent DO output setting
www.onsemi.com (3) Synchronization and RAM address reset (1bit) : SYR SYR Synchronization detection circuit RAM
0 Normal operation (reset cleared) Normal wr ite (See the description of the OWE bit)
1 Forced to the unsynchronized state
(synchronization reset) After the reset is cleared, start writing from the data prior to the establishment of synchronization, i.e. the data in backward protection. Initial value : SYR = 0 Caution : 1. To apply a synchronization reset, set SYR to 1 temporar ily using CCB, and then set it back to 0 again using CCB. The circuit will start synchronization capt ure operation at the point SYR is set to 0. 2. The SYR pin (pin24) also provides an identical reset control operation. Applications can use either method. However, the control method that is not used must be set to 0 at all times. Any pulse with a width of over 250 ns will suffice. 3. A reset must be applied immediately after the reception channel is changed. If a reset is not applied, reception data from the previous channel may remain in on-chip memory. 4. Data read out after a synchronization reset is read out starting with the backward protection block data preceding the establishment of synchronization. (4) RAM write control (1bit) : OWE OWE RAM write conditions 0 Only data for which synchronization had been established is written.
1 Data for which synchronization not has been established (unsynchronized data) is also
written. (However, this applies when SYR = 0.) Initial value : OWE = 0 (5) Error correction method setting (5bits) : EC0 to EC4 Initial values : EC0 = 0, EC1 = 1, EC2 = 0, EC3 = 0, EC4 = 1 Caution : 1. If soft-decision A or soft-decision B is specified, so ft-decision control will be performed even if the number of bits corrected is set to 0 (error detection only). With these settings, data will be output for blocks with no errors. 2. As opposed to soft-decision B, the soft-decision A setting suppresses soft decision error correction. (6) Intermittent DO output setting SP0 SP1 DO output state 0 0 DO goes low when one or more blocks of data are written to memory. 1 0 DO goes low when 4 or more blocks of data are written to memory. 0 1 DO goes low when 8 or more blocks of data are written to memory. 1 1 DO goes low when 12 or more blocks of data are written to memory. Initial values : SP0 = 0, SP1 = 0 E C E C E C Number of bits corrected 0 0 0 0 (error detection only) 1 0 0 1 or fewer bits 0 1 0 2 or fewer bits 1 1 0 3 or fewer bits 0 0 1 4 or fewer bits 1 0 1 5 or fewer bits 0 1 1 Illegal value 1 1 1 Illegal value E C E C Soft-decision setting 0 0 MODE0 Hard decision 1 0 MODE1 Soft decision A 0 1 MODE2 Soft decision B 1 1 Illegal value
www.onsemi.com (7) Crystal oscillator frequency selection (1bit) : XS XS = 0 : 4.332MHz (Initial value : XS = 0) XS = 1 : 8.664MHz (8) Demodulation circuit phase control (2bits) : PL0, PL1 PL0 PL1 Demodulation circuit phase control 0 0/1 Normal operation when ARI presence or absence is unclear.
0 If the circuit determines that the ARI signal is absent : 90 phase
1 If the circuit determines that the ARI signal is present : 0 phase
Initial values : PL0 = 0, PL1 = 1 Caution : 1. When PL0 is 0 (normal operation), the IC detects the presence or absence of the ARI signal and reproduces the RDS data by automatically controlling the demodulation phase with respect to the reproduced carrier. However, the initial phase following a synchronization reset is set by PL1. 2. If PL0 is set to 1, the demodulation circuit phase is locked according to the PL1 setting at either 90 (PL1 = 0) or 0 (PL1 = 1), allowing RDS data to be reproduced. When ARI is not present, PL1 should be set to 0, since the RDS data is reproduced by detecting at a phase of 90 with respect to the reproduced carrier. When ARI is present, PL1 should be set to 1, since detection is at 0. In cases where the ARI presence is known in advance, more stable reproduction can be achieved by fixing the demodulation phase in this manner. (9) RDS/RBDS(MMBS) selection (1bit) : RM RM RBDS Decoding method 0 None Only RDS data is decoded correctly (Offset word E is not detected.) 1 Provided RDS and MMBS data is decoded correctly (Offset word E is also detected.) Initial value : RM=0 (10) Output pin settings (3bits) : PT0 to PT2 These bits control the T3, T4, T5, T6, T7, SYNC, and RDS-ID pins MODE P T P T P T T3 T4 T5 T6 T7 RDCL RDDA RSFT ERROR 57K TP BE1 CORREC ARI-ID TA BE0 : open, , : Output enabled ( = reverse polarity) Initial value : PT0 = 1, PT1 = 1, PT2 = 0 (Mode 3) Caution : 1. When PT2 is set to 1, the polarity of the T6(ERROR/57K/TP), T7(CORREC/ARI-ID/TA), SYNC, and RDS-ID pins changes to active high. 2. The output pins (T3 to T7, SYNC, and RDS-ID) are all open-drain pins, and require external pull-up resistors to output data. Mode1 (PT2 = 0) Pin T6 (TP) TP = 0 detected High (1) TP = 1 detected Low (0) TP = Traffic program code
www.onsemi.com Mode1 (PT2 = 0) Pin T7 (TA) TA = 0 detected High (1) TA = 1 detected Low (0) TA = Traffic announcement code Mode2 (PT2 = 0) Pin T7 (ARI-ID) No SK High (1) SK present Low (0) Mode3 (PT2 = 0) Pin T6 (ERROR) Pin T7 (CORREC) Correction not possible Low (0) Low (0) Errors corrected High (1) Low (0) No errors High (1) High (1) Mode = 4 Pin T6 (BE1) Pin T7 (BE0) Number of error blocks (B) B=0 Low (0) Low (0) 1 B 20 Low (0) High (1) 20 B 40 High (1) Low (0) 40 B 48 High (1) High (1) These pins indicate the number of blocks in a set of 48 blocks that had errors before correction. The output polarity of these pins is fixed at the values listed in the table. Mode (PT2 = 0) The SYNC pin 0 to 2 When synchronized : Low (0), When unsynchronized: High (1) When synchronized : Goes high for a fixed period (421 s) at the start of a block and then goes low. When unsynchronized : High (1) Caution : The output indicates the synchronization state for the previous block. When PT2 = 0 The RDS-ID pin No RDS High (1) RDS present Low (0) (11) Test mode settings (4bits) : TS0 to TS3 Initial values : TS0 = 0, TS1 = 0, TS2 = 0, TS3 = 0 (Applications must set these bits to the above values.) Notes : The T1 and T2 pins (pins 7 and 8) are related to test mode as follows. Pin T1 Pin T2 IC operation Notes 0 0 Normal operating mode These states are user settable 0 1 Standby mode (crystal oscillator stopped) 1 0/1 IC test mode Users cannot use this state The T1 pin must be tied to VSS (0V). (12) Circuit control (2 bits) : CT0 and CT1 Item Control CT0 RSFT control When set to 1, soft-decision control data (RSFT) is easier to generate. CT1 RDS-ID detection condition When set to 1, the RDS-ID detection conditions are made more restrictive. Initial value : CT0 = 0, CT1 = 0
www.onsemi.com RDCL / RDDA / RSFT and ERROR / CORREC / SYNC output timing (1) Timing 1 Note : When PT2 = 0, RDDA and RSFT must be acquired on the falling edge of RDCL. (2) Timing 2 (mode 3, PT2 = 0) Input data Error crrection SYNC output ERROR output CORREC output Sync NG Sync OK Tp1 Tp1 Sync OK Sync OK Sync OK Sync OK Sync NG Sync NG Data corrected No errors No errors Data corrected Uncorrectable Uncorrectable 17 μs 421 μs 421 μs Tp2 Tp1 17 μs RDCL output RSFT output RDDA output
www.onsemi.com Serial Data Input and Output Methods Data is input and output using the CCB (Computer Control Bus), which is Our audio IC serial bus format. This IC adopts an 8-bit address CCB format. I/O mode (LSB) Address (MSB) Comment B0 B1 B2 B3 A0 A1 A2 A3 [1] IN1 (6A) 0 1 0 1 0 1 1 0 Control data input mode, also referred to as “ serial data input ” mode. 16bit data input mode [2] IN2 (6B) 1 1 0 1 0 1 1 0 [3] OUT (6C) 0 0 1 1 0 1 1 0 Data output mode The data for multiple blocks can be output sequentially in this mode. CE CL DI DO B0 B1 B2 B3 A0 A1 A2 A3 First Data IN1/2 First Data OUT First Data OUT I/O mode determined For the CL normal high state For the CL normal low state
www.onsemi.com (1) Serial data input (IN1 / IN2) tSU, tHD, tEL, tES, tEH 0.75s tLC 1.15s tCE 20 ms CL : Normal high CL : Normal low (2) Serial data output (OUT) tSU, tHD, tEL, tES, tEH 0.75s tDC, tDH 0.46s tCE 20 ms CL : Normal high CL : Normal low Cautions : 1. Since the DO pin is an n-channel open-drain output, the transition times (tDC, tDH) will differ with the value of the pull-up resistor used. 2. The CE, CL, DI, and DO pins can be connected to the corresponding pins on other ICs that use the CCB interface. (However, we recommend connecting the DO and CE pins separately if the number of available microcontroller ports allows it.) 3. Serial data I/O becomes possible after the crystal oscillator starts oscillation. tSU tHD tEL tES tEH tLC tCE B0 B1 B2 B3 A0 A1 A2 A3 FS0 CT1 FS1 FS2 SP0 FS3 SP1 EC3 TS0 EC4 TS1 CT0 TS2 TS3 CE CL DI Internal data tSU tHD tEL tES tEH tDC tDC tCE B0 B1 B2 B3 A0 A1 A2 A3 1 0 1 0 D3 D2 D1 D0 CE CL DI DO tDH tSU tHD tEL tES tEH tLC tCE B0 B1 B2 B3 A0 A1 A2 A3 FS1 FS0 CT1 FS2 SP0 FS3 SP1 EC3 TS0 EC4 TS1 CT0 TS2 TS3 CE CL DI tSU tHD tDC tDC B0 B1 B2 B3 A0 A1 A2 A3 1 0 1 0 D3 D2 D1 D0 CE CL DI DO tDH tEL tES tEH tCE Internal data
www.onsemi.com (3) Serial data timing CL : Normal high CL : Normal low Parameter Symbol Cond itions min typ max Unit Data setup time tSU DI, CL 0.75 s Data hold time tHD DI, CL 0.75 s Clock low level time tCL CL 0.75 s Clock high level time tCH CL 0.75 s CE wait time tEL CE, CL 0.75 s CE setup time tES CE, CL 0.75 s CE hold time tEH CE, CL 0.75 s CE high level time tCE CE 20 ms Data latch transition time tLC 1.15 s Data output time tDC DO, CL Differs with the value of the pull-up resistor used. 0.46 s tDH DO, CE 0.46 s tCE VIH VIL VIL VIH VIL tEH tDH tLC tES tDC tDC tEL Old Old New New tCLtCH tSU tHD VIH VIL VIHVIL VIHVIL VIL CE CL DI DO tCE VIH VIL VIHVIL tEH tDH tLC tES tDC tEL tCL tCH tSU tHD VIH VIL VIH VIL VIH VIL VIH CE CL DI DO Internal data latch Internal data latch
www.onsemi.com DO pin operation This IC incorporates a RAM data buffer that can hold up to 24 blocks of data. At the point when one block of data is written to this RAM, the IC issues a read request by switching the DO pin from high to low. The DO pin always goes high for a fixed period (Tdo = 265 s) after a readout and CE goes low. When all the data in the data buffer has been read out, the DO pin is held in the high state until a new block of data has been written to the RAM. If there is data that has not yet been read remaining in the data buffer, the DO pin goes low after the Tdo time has elapsed. After a synchronization reset, the DO pin is held high until synchronization is established. It goes low at the point the IC synchronizes. When the DO pin is high following the 265 s period (Tdo) after data is read out. Here, the buffer is in the empty state, i.e. the state where new data has not been written. After this, when the DO pin goes low, applications are guaranteed to be able to read out that data without it being overwritten by new data if they start a readout operation within 480 ms of DO going low. When DO goes low 265 s after data is read out Here, there is data that has not been read out remaining in the data buffer. In this case, applications are guaranteed to be able to read out that data without it being overwritten by new data if they start a readout operation within 20 ms of DO going low. (Note that this is the worst case condition.) Notes : 1. Although an application can determine whether or not there is data remaining in the buffer by checking the DO level with the above timing, checking the RE and RF flags in the serial data is a preferable method. 2. Applications are not limited to reading out one block of data at a time, but rather can read out multiple blocks of data continuously as described above. When using this method, if an application references the RE and RF flags in the data while reading out data, it can determine the amount of data remaining. However, the length of the period for data readout (the period the CE pin remains high) must be kept under 20 ms. 3. If the DO pin is shared with other ICs that use the CCB interface, the application must identify which IC issued the readout request. One method is to read out data from the LC72722PM and either check whether meaningful data has been read (if the LC72722PM is not requesting a read, data consisting of all zeros will be read out) or check whether the DO level goes low within the 256 s following the completion of the read (if the DO pin goes low, then the request was from another IC). CE pin DO pin (Last data)-1 Last data New data T Tdo DO check (Tdo < T) CE pin DO pin (Last data)-2 (Last data)-1 Last data T Tdo DO check (Tdo < T)
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ORDERING INFORMATION
Device Package Shipping (Qty / Packing) LC72722PM-MPB-E SOIC24 W / MFP24 (375mil) (Pb-Free) 25 / Fan-Fold LC72722PM-TLM-E SOIC24 W / MFP24 (375mil) (Pb-Free) 1000 / Tape & Reel † For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://www.onsemi.com/pub_link/Collateral/BRD8011-D.PDF + 12 4VREF SYR SYR 22 3MPXIN CE 32 2Vdda DI 42 1Vssa CL 52 0FLOUT DO 61 9CIN RDS-ID 71 8T1 SYNC 12 13XOUT XIN 10 μF MPXIN Vdda Vssa 8 T2 Vssd
9 T3NC NC
0.1 μF 15Vssd 14Vddd 0.1 μF Vssa
4.332 MHz
10 kΩ Vddd 10 kΩ RDS-ID SYNC Vddd 10 kΩ