LCXXCI SHUNYE | Alldatasheet

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LCXXCI a 3.3V-30V bi-directional TVS diode , utilizing leading monolithic silicon technology to provide fast response time and low ESD clamping voltage, making his device an ideal solution for protecting voltage sensitive high-speed data lines. The LCX XCI has a low capacitance with a typical value at 1pF,and com -plies with the IEC61000-4-2(ESD) standard with ±30kV air and ±30kV contact discharge. It is assembled into a lead free SOD- 323 package. The small size, low capacitance and high ESD su rge protection make LCXXCI an idea choice to protect cell phon -e, wireless systems, and communication equipment.  USB Ports.  Smart Phones.  Wireless Systems.  Ethernet 10/100/1000 Base T.  350W peak pulse power (8/20μs).  Ultra low capacitance: 1.2pF typical.  Ultra low leakage: nA leel.  Low operating :3.3V ,5V,8V,12V,15V,18V,24V,30V.  Low clamping voltage.  Protects one power line or data line.  Complies with following standards: – IEC 61000-4-2 (ESD) immunity test Air discharge: ±30kV Contact discharge: ±30kV.  –IEC61000-4-4 (EFT) 40A (5/50ns).  RoHS Compliant.  Package: SOD-323. PartNO packaging ReelSize LC03CI 3000/Tape&Reel 7inch LC05CI 3000/Tape&Reel 7inch LC08CI 3000/Tape&Reel 7inch LC12CI 3000/Tape&Reel 7inch LC15CI 3000/Tape&Reel 7inch LC18CI 3000/Tape&Reel 7inch LC24CI 3000/Tape&Reel 7inch LC30CI 3000/Tape&Reel 7inch SOD-323 LCxxCI Series 1-Line Low Capacitance Bi-directional TVS Diode

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AbsoluteMaximumRatings(TA=25°Cunlessotherwisespecified) Parameter Symbol Value Unit PeakPulsePower(8/20µs) Ppp 350 W PeakPulseCurrent(8/20µs) Ipp 22-6 A ESDperIEC61000−4−2(Air) ESDperIEC61000−4−2(Contact) VESD ±30 ±30 kV OperatingTemperatureRange TJ −40to+85 °C StorageTemperatureRange Tstg −55to+150 °C LCO3CI Parameter Symbol TestCondition Min Typ Max Unit ReverseWorkingVoltage VRWM 3.3 V BreakdownVoltage VBR IT=1mA 4 6 V ReverseLeakageCurrent IR VRWM=3.3V 0.2 µA ClampingVoltage VC IPP=1A(8x20µspulse) 5 V ClampingVoltage VC IPP=22A(8x20µspulse) 16 V JunctionCapacitance CJ VR=0V,f=1MHz 1.2 pF LC05CI Parameter Symbol TestCondition Min Typ Max Unit ReverseWorkingVoltage VRWM 5.0 V BreakdownVoltage VBR IT=1mA 6.2 6.8 8.0 V ReverseLeakageCurrent IR VRWM=5.0V 0.5 µA ClampingVoltage VC IPP=1A(8x20µspulse) 8.5 V ClampingVoltage VC IPP=22A(8x20µspulse) 17.0 20 V JunctionCapacitance CJ VR=0V,f=1MHz 1.0 1.5 pF ELECTRICAL CHARACTERISTICS(TA=25°C unless otherwise specified) www.shunyegroup.com.cn

Parameter Symbol TestCondition Min Typ Max Unit ReverseWorkingVoltage VRWM 8.0 V BreakdownVoltage VBR IT=1mA 8.5 V ReverseLeakageCurrent IR VRWM=8V 0.2 µA ClampingVoltage VC IPP=1A(8x20µspulse) 13 V ClampingVoltage VC IPP=18A(8x20µspulse) 19.5 V JunctionCapacitance CJ VR=0V,f=1MHz 1 pF LC12CI Parameter Symbol TestCondition Min Typ Max Unit ReverseWorkingVoltage VRWM 12.0 V BreakdownVoltage VBR IT=1mA 13.3 V ReverseLeakageCurrent IR VRWM=12V 0.2 µA ClampingVoltage VC IPP=1A(8x20µspulse) 18 V ClampingVoltage VC IPP=12A(8x20µspulse) 29 V JunctionCapacitance CJ VR=0V,f=1MHz 1.2 pF LC15CI Parameter Symbol TestCondition Min Typ Max Unit ReverseWorkingVoltage VRWM 15.0 V BreakdownVoltage VBR IT=1mA 16.7 V ReverseLeakageCurrent IR VRWM=15V 0.2 µA ClampingVoltage VC IPP=1A(8x20µspulse) 22 V ClampingVoltage VC IPP=10A(8x20µspulse) 32 V JunctionCapacitance CJ VR=0V,f=1MHz 1.2 pF www.shunyegroup.com.cn

Parameter Symbol TestCondition Min Typ Max Unit ReverseWorkingVoltage VRWM 18.0 V BreakdownVoltage VBR IT=1mA 20 V ReverseLeakageCurrent IR VRWM=18V 0.2 µA ClampingVoltage VC IPP=1A(8x20µspulse) 26 V ClampingVoltage VC IPP=10A(8x20µspulse) 35 V JunctionCapacitance CJ VR=0V,f=1MHz 1 pF LC24CI Parameter Symbol TestCondition Min Typ Max Unit ReverseWorkingVoltage VRWM 24.0 V BreakdownVoltage VBR IT=1mA 26.7 V ReverseLeakageCurrent IR VRWM=24V 0.2 µA ClampingVoltage VC IPP=1A(8x20µspulse) 43 V ClampingVoltage VC IPP=8A(8x20µspulse) 55 V JunctionCapacitance CJ VR=0V,f=1MHz 1.2 pF LC30CI Parameter Symbol TestCondition Min Typ Max Unit ReverseWorkingVoltage VRWM 30.0 V BreakdownVoltage VBR IT=1mA 33.3 V ReverseLeakageCurrent IR VRWM=30V 0.2 µA ClampingVoltage VC IPP=1A(8x20µspulse) 50 V ClampingVoltage VC IPP=10A(8x20µspulse) 75 V JunctionCapacitance CJ VR=0V,f=1MHz 1.2 pF www.shunyegroup.com.cn

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ReflowCondition Pb-FreeAssembly Pre-heat -TemperatureMin(Ts(min)) +150°C -TemperatureMax(Ts(max)) +200°C -Time(MintoMax)(ts) 60-180secs Averagerampuprate(LiquidusTemp(TL)to peak) 3°C/sec.Max TS(max)toTL-Ramp-upRate 3°C/sec.Max Reflow -Temperature(TL)(Liquidus) +217°C -Temperature(tL) 60-150secs PeakTemp(Tp) +260(+0/-5)°C Timewithin5°CofactualPeakTemp(tp) 30secs.Max Ramp-downRate 6°C/secs.Max xTime25°CtoPeakTemp(TP) 8min.Max Donotexceed +260°C www.shunyegroup.com.cn

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