LBAV99LT1G LEIDITECH | Alldatasheet

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  1. FEATURES
  • We declare that the material of product compliance with RoHS requirements and Halogen Free.
  • S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable. 2. DEVICE MARKING AND ORDERING INFORMATION 3. MAXIMUM RATINGS(Ta = 25º C) Reverse Voltage Forward Current Peak Forward Surge Current Repetitive Peak Reverse Voltage Average Rectified Forward Current Non-Repetitive Peak Forward Current t=1ms t=1s 4. THERMAL CHARACTERISTICS Total Device Dissipation, FR−4 Board (Note 1) @ TA = 25ºC Derate above 25º C Thermal Resistance, Junction–to–Ambient(Note 1) Junction and Storage temperature 0.5 500 mA VRRM 70 V IF(AV) mA A IFM(surge) LBAV99LT3G A7 10000/Tape&Reel Parameter Symbol Limits Device Marking Shipping LBAV99LT1G A7 3000/Tape&Reel IF 215 mA Unit LBAV99LT1G S-LBAV99LT1G Repetitive Peak Forward Current IFRM 500 mA 225 Parameter Symbol Limits Unit PD t=1μs 2 mW VR 75 V IFSM 1.8 556 −65∼+150 RΘJA TJ,Tstg mW/º C º C/W ºC (averaged over any 20 ms period) 715 SOT23(TO-236) Rev : 01.06.2014 1/4 www.leiditech.com
  1. ELECTRICAL CHARACTERISTICS (Ta= 25ºC) Characteristic Reverse Breakdown Voltage (I(BR)=100μA) Forward Voltage (IF = 1.0 mAdc) (IF = 10 mAdc) (IF = 50 mAdc) (IF = 150 mAdc) Reverse Voltage Leakage Current (VR = 70Vdc) (VR = 70Vdc,TJ = 150° C) (VR = 25Vdc,TJ = 150° C) Diode Capacitance (VR = 0V, f = 1.0 MHz) Reverse Recovery Time (IF=IR=10mAd,RL =50Ω ) Forward Recovery Voltage (IF = 10 mAdc, tr = 20 ns) μA - - 2.5 - - 50 VFR V pF ns - - - 1000 Unit VF mV - - 1250 Symbol Min. VBR V 70 - - trr - - 6.0 - 1.75 IR - - 30 CD - - 2.0 Typ. Max. 715 - - 855 LBAV99LT1G S-LBAV99LT1G Rev : 01.06.2014 2/4 www.leiditech.com

6.ELRCTRICAL CHARACTERISTICS CURVES 0.1 100 1000 0 0.5 1 1.5 IF, Forward Current(mA) VF, Forward Voltage(V) 150℃ 25℃ -55℃ 85℃ 0.001 0.01 0.1 100 1000 0 20 40 60 80 100 IR,Reverse Current(uA) VR, Reverse Voltage(V) 150℃ 25℃ -55℃ 85℃ 0.1 0.2 0.3 0.4 0.5 0.6 0 10 20 30 40 50 C,Capacitor(pF) VR, Reverse Voltage(V) f=1MHz Reverse Characteristics Capacitor Characteristics Forward Characteristics LBAV99LT1G S-LBAV99LT1G Rev : 01.06.2014 3/4 www.leiditech.com

7.OUTLINE AND DIMENSIONS Notes: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. 8.SOLDERING FOOTPRINT e L 0.35 0.54 0.051 0.055 0.004 1.20 0.114 0.12 1.3 1.4 0.047 3.04 0.11 0.02 MAX A DIM MILLIMETERS INCHES 0.69 0.014 0.021 0.029 b E MIN NOM MAX MIN NOM D c 2.80 2.9 LBAV99LT1G S-LBAV99LT1G Shanghai Leiditech Electronic Co.,Ltd Email: sale1@leiditech.com Tel : +86- 021 50828806 Fax : +86- 021 50477059 Rev : 01.06.2014 4/4 www.leiditech.com