LB3036 VBSEMI | Alldatasheet

Document overview

  • Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
  • PDF pages: 7

Technical content

N-Channel 60 V (D-S) MOSFET

FEATURES

  • TrenchFET® power MOSFET
  • Package with low thermal resistance
  • 100 % Rg and UIS tested Notes a. Package limit ed. b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. c. When mounted on 1" square PCB (FR4 materi al). PRODUCT SUMMARY VDS (V) 60 RDS(on) (Ω) at VGS = 10 V 0.0016 0.002RDS(on) (Ω) at VGS = 4.5 V 0 ID (A) 270 Configuration Single D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS 60 V Gate-Source Voltage ±VGS 20 TC Continuous Drain Current = 25 °C ID 270 TC A = 125 °C Continuous Source Current (Diode Conduction) IS Pulsed Drain Current b IDM 600 Single Pulse Avalanche Current IL = 0.1 mH AS 75 Single Pulse Avalanche Energy EAS 281 mJ TC Maximum Power Dissipation b = 25 °C PD

375 W TC = 125 °C 125

TJ, TOperating Junction and Storage Temperature Range stg -55 to +175 °C THERMAL RESISTANCE RATINGS PARAMETER SYMBOL LIMIT UNIT PCB MountJunction-to-Ambient c RthJA 40 °C/WJunction-to-Case (Drain) 0.RthJC 4 120 a 120 a LB3036-VB www.VBsemi.com TO-220AB Top View S g R¡pí~¿ÿ400-655-8788S D G

a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. b. Guaranteed by design, not subj ect to production testing. c. Independent of operating temperature. SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 μA 60 - - V Gate-Source Threshold Voltage VDS = VGS, IDVGS(th) = 250 μA 1.5 2 .0 2.5 Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V ±- - 100 nA Zero Gate Voltage Drain Current VGS IDSS = 0 V VDS = 60 V - - 1 μA VGS = 0 V V DS = 60 V, TJ = 125 °C - - 50 VGS = 0 V V DS = 60 V, TJ = 175 °C - - 1.5 mA On-State Drain Current a ID(on) VDS ≥VGS = 10 V 5 V 120 - - A Drain-Source On-State Resistance a VGS RDS(on) = 10 V ID = 30 A - 0.0 016 VGS = 10 V I D = 30 A, TJ Ω = 125 °C - 0.0031 VGS = 10 V I D = 30 A, TJ = 175 °C - 0.0037 VGS = 4.5 V ID = 20 A - 0.0020 Forward Transconductance b VDS = 15 V, IDgfs = 30 A - 164 - S Dynamic b Input Capacitance Ciss VGS = 0 V V DS = 25 V, f = 1 MHz - 12 060 15 100 Coss pF Output Capacitance - 5750 72 00 Reverse Transfer Capacitance - 860 11Crss 00 Total Gate Charge c Qg - 128 2 VGS = 10 V V DS = 30 V, ID = 80 A Gate-Source Charge nC c Qgs -3 3- Gate-Drain Charge c Qgd -1 1- Gate Resistance Rg f = 1 MHz 1.0.8 68 2.6 Ω Turn-On Delay Time c td(on) VDD = 30 V, RL = 0.375 Ω -2 0 2 ID ≅ 80 A, VGEN = 10 V, Rg = 1 Ω Rise Time ns c tr -1 5 4 0 Turn-Off Delay Time c td(off) -6 5 100 Fall Time c tf -1 2 2 0 Source-Drain Diode Ratings and Characteristics b Pulsed Current a ISM -- 3 0 0 A Forward Voltage VSD IF = 80 A, VGS = 0 V - 0. 88 1.5 V LB3036-VB www.VBsemi.com g

TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Output Characteristics Capacitance Transfer Characteristics On-Resistance vs. Drain Current Gate Charge 200 ID - Drain Current (A) 02468 1 0 VDS -D ra i n - t o -Source Voltage (V) VGS = 10 V thru 4 V VGS = 3 V gfs -T ra nsconductance (S 120 240 300) 0 1 02 03 04 05 0 ID - Drain Current (A) Transconductance TC = 125 °C TC = - 55 °C TC = 25 °C C - C 3600 10 800 14 400 18 000apacitance (pF) Ci 0 1 02 03 04 05 06 0 VDS -D ra i n - t o -Source Voltage (V) ss Coss Crss ID - 02468 1 0 VGS - Gate-to-Source Voltage Drain Current (A) (V) TC = - 55 °CTC = 125 °C TC = 25 °C 0.000 0.001 0.002 0.003 0.004 0.005 0 20 RDS(on) - On-Resis 40 60 80 100 120 tance (Ω) ID - Drain Current (A) VGS = 4.5 V VGS = 10 V VGS - Gate-to-Source Voltage 306 09 0 1 2 0 1 5 0 (V) Qg -T ot a l Gate Charge (nC) ID = 80 A LB3036-VB www.VBsemi.com g

TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) On-Resistance vs. Junction Temperature On-Resistance vs. Gate-to-Source Voltage Drain Source Breakdown vs. Junction Temperature Source Drain Diode Forward Voltage Threshold Voltage Safe Operating Area 0.6 1.2 1.5 1.8 2.1 RDS(on) -O n- R esistance (Normalized) - 50 - 25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) ID = 30 A VGS = 4.5 V VGS = 10 V RDS(on) -O n- R esis 0.000 005 0.010 0.015 0.020 0.025 tance (Ω) 02468 1 0 VGS - Gate-to-Source Voltage (V) TJ = 150 °C TJ = 25 °C - 50 VDS -D ra i n - t o -S - 25 0 25 50 75 100 125 150 175 ource Voltage (V) TJ - Junction Temperature (°C) ID = 10 mA 0.001 0.1 100 VSD - Source-to- IS - Source Current (A) Drain Voltage (V) TJ = 25 °C TJ = 150 °C 0.8 0.4 0.0 - 0.4 - 0.8 - 1.2 - 1.6 VGS(th) - 50 - 25 0 25 50 75 100 125 150 175 Variance (V) TJ - Temperature (°C) ID = 250 μA ID = 5 mA 0.01 100 1000 0.01 0.1 1 ID - D 10 100 rain Current (A) VDS -D ra i n - t o -Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Limited by RDS(on)* 1 ms IDM Limited TC = 25 °C Single Pulse BVDSS Limited 100 μs 10ms ID Limited LB3036-VB www.VBsemi.com g

THERMAL RATINGS (TA = 25 °C, unless otherwise noted) Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Thermal Transient Impedance, Junction-to-Case Note

  • The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C) - Normalized Transient Thermal Impedance Junction-to-Case (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062" , double sided with 2 oz. copper, 100 % on both sides. The part ca pabilities can widely vary depending on actual application parameters and operating conditions. 10-4 10-3 10-2 10-1 1 10 100 1000 0.01 0.001 0.1 0.0001 Normalized Effective Trans Square Wave Pulse Duration (s) ient Thermal Impedance 0.1 0.01 10-4 10-3 10-2 Square Wave Pulse Duration (s) 10-1 t n e i s n a r T e v i t c e f f E d e z i l a m r o N e c n a d e p m I l a m r e h T 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 LB3036-VB www.VBsemi.com g

www.VBsemi.com No tes 1. Plane B includes maximum features of heat sink tab and plastic. 2. No more than 25 % of L1 ca n fall above seating plane by max. 8 mils. 3. Pin-to-pin coplanarity max. 4 mils. 4. *: Thin lead is for SUB, SYB. Thick lead is for SUM, SYM, SQM. 5. Use inches as the primary measurement. 6. This feature is for thick lead. MINCHES ILLIMETERS A 0.160 0.190 4.064 4.826 b 0.020 0.039 0.508 0.990 b1 0.020 0.035 0.508 0.889 b2 0.045 0.055 1.143 1.397 c* Thin lead 0.013 0.018 0.330 0.457 Thick lead 0.023 0.028 0.584 0.711 c1 Thin lead 0.013 0.017 0.330 0.431 Thick lead 0.023 0.027 0.584 0.685 c2 0.045 0.055 1.143 1.397 D 0.340 0.380 8.636 9.652 D1 0.220 0.240 5.588 6.096 D2 0.038 0.042 0.965 1.067 D3 0.045 0.055 1.143 1.397 D4 0.044 0.052 1.118 1.321 E 0.380 0.410 9.652 10.414 E1 0.245 - 6.223 - E2 0.355 0.375 9.017 9.525 E3 0.072 0.078 1.829 1.981 e 0.100 BSC 2.54 BSC K 0.045 0.055 1.143 1.397 L 0.575 0.625 14.605 15.875 L1 0.090 0.110 2.286 2.794 L2 0.040 0.055 1.016 1.397 L3 0.050 0.070 1.270 1.778 L4 0.010 BSC 0.254 BSC M - 0.002 - 0.050 ECN: T13-0707-Rev. K, 30-Sep-13 DWG: 5843 321 L L(1) D H(1) Q Ø P A F J(1) b(1) e(1) e E b C g TO-220AB

www.VBsemi.com Disclaimer All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their representatives (collectively, the "Taiwan VBsemi"), assumes no responsibility for any errors, inaccuracies or incomplete data contained in the table or any other any disclosure of any information related to the product.(www.VBsemi.com) Taiwan VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of any goods or continuous production. To the maximum extent permitted by applicable law on Taiwan VBsemi relinquished: (1) any application and all liability arising out of or use of any products; (2) any and all liability, including but not limited to special, consequential damages or incidental ; (3) any and all implied warranties, including a particular purpose, non-infringement and merchantability guarantee. Statement on certain types of applications are based on knowledge of the product is often used in a typical application of the general product VBsemi Taiwan demand that the Taiwan VBsemi of. Statement on whether the product is suitable for a particular application is non-binding. It is the customer's responsibility to verify specific product features in the products described in the specification is appropriate for use in a particular application. Parameter data sheets and technical specifications can be provided may vary depending on the application and performance over time. All operating parameters, including typical parameters must be made by customer's technical experts validated for each customer application. Product specifications do not expand or modify Taiwan VBsemi purchasing terms and conditions, including but not limited to warranty herein. Unless expressly stated in writing, Taiwan VBsemi products are not intended for use in medical, life saving, or life sustaining applications or any other application. Wherein VBsemi product failure could lead to personal injury or death, use or sale of products used in Taiwan VBsemi such applications using client did not express their own risk. Contact your authorized Taiwan VBsemi people who are related to product design applications and other terms and conditions in writing. The information provided in this document and the company's products without a license, express or implied, by estoppel or otherwise, to any intellectual property rights granted to the VBsemi act or document. Product names and trademarks referred to herein are trademarks of their respective representatives will be all. MaterialCategoryPolicy Taiwan VBsemi Electronics Co., Ltd., hereby certify that all of the products are determined to be oHS compliant and meets the definition of restrictions under Directive of the European Parliament 2011/65 / EU, 2011 Nian. 6. 8 Ri Yue restrict the use of certain hazardous substances in electrical and electronicequipment(EEE)-modification,unlessotherwisespecifiedasinconsistent.(www.VBsemi.com) PleasenotethatsomedocumentsmaystillrefertoTaiwanVBsemiRoHSDirective2002/95/EC.We confirm that all products identified as consistent with the Directive 2002/95 / EC European Directive 2011/65/. Taiwan VBsemi Electronics Co., Ltd. hereby certify that all of its products comply identified as halogen-free halogen-free standards required by the JEDEC JS709A. Please note that some Taiwanese VBsemi documents still refer to the definition of IEC 61249-2-21, and we are sure that all products conformtoconfirmcompliancewithIEC61249-2-21standardlevelJS709A.