LH1263 ETC1 | Alldatasheet

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Preliminary Data Sheet = ater _— Microelectronics LH1263 E & M Signaling Circuit Features Description = Switches controlled by TTL compatible data inputs The LH1263AE E & M Signaling Circuit replaces r - electromechanical relays and discrete components = One switch with 250 mA current-break capability that are utilized in line signaling interface circuits ® Two switches have low ON-resistance such as E & M trunk signaling and FX ground-start — <8 Dat 250 mA applications. This IC is comprised of logic-program- — <35 Q at 85 mA (current-limit switch) mable, latched switch control; three high-voltage No EMI switches (one for overcurrent protection); a ground- . reference comparator, and a driver for external = 180 mA driver circuit for external relays (TTLcom- _relays. The latches store data, which establishes this patible) IC as a Type |, II, Ill, IV, or V interface. The ground ventiy reference comparator and a few resistors provide the

1 Clean, bounce-tree switching E lead and M lead detector, The overcurrent protec

= Solid-state reliability tion eliminates the need for a positive temperature sah i sated ina di coefficient (PTC) resistor or a ballast lamp on the M . Hite voltage monolithic IC fabricatedin a dielectric ead battery supply. The LH1263AE device can be configured to perform Type |, II, Il, IV, and V interfaces. Multiple ICs are required for some of the interfaces. The LH1263AE device is available in a 20-pin, plastic DIP. AT&T Microelectronics 4-125 M™ 0050026 0019748 242 me

3 DIGITAL al ‘SWITCH B +

1 SWITCH

Figure 1. Functional Block Diagram

Figure 2. Pin Diagram Table 1. Pin Descriptions [1 | Voo _| Positive Supply Voltage. Operating voltage is +5.0 V (40.25 V). 18 inputs DATA1 and DATAS respectively.

19 DATAS

SWA2__| irrespective of polarity. 7 COMP IN| Comparator. Ground reference comparator input and output respectively.

9 COMP OUT

[8 | COMP GND] Comparator Ground. An independent ground or common for the comparator. 70 RD OUT | Relay WO. Relay output and input respectively.

13 RD IN

[41__| GND ___| Ground. Common ground point for device circuitry (except the comparator). 14 SWPB potentials respectively of a load for Switch B. 16 sSwPC potentials respectively of a load for Switch C.

extended periods of time can adversely affect device reliability. Table 2. Absolute Maximum Ratings

  • Switch C is current limited between 140 mA and 360 mA.

1000 V, 10 x 1000 1s, 50 mA peak Bc

Table 4. Supply Voltages : Table 5. Comparator Operation (BAT/GND Detector) COMP GND pin is connected to an external ground reference.

  • COMP IN is internally diode clamped to Voo and COMP GND with a maximum current of 20 mA.

Table 6. Relay Driver Operation made. Typical average current on pin 15 during a fault is less than 30 mA. The shutdown current window is between 140 mA and 360 mA.

Figure 5. Typical ON Characteristics Switch B Figure 3. Typical ON Characteristics Switch A

200 V oBv 16V0 av b

Figure 6. Switch C, Current-Limit Mode Figure 4. Typical ON Characteristics Switch C

Table 7. Logic Table Pins EN1 and EN2 are enabled (logic high).

40 Ld 8 13 | @) [|e 137

Figure 11. Break-Current Capability — Switch A Figure 13. High-Voltage Leakage Figure 12. Break-Current Capability — Switch B Figure 14. High-Voltage Leakage

Figure 15. High-Voltage Leakage Figure 17. High-Voltage Leakage

1 OC af = r4 1 0 “FT

Figure 16. High-Voltage Leakage Figure 18. High-Voltage Leakage

LH1263 E & M Signaling Circuit Data Book Outline Diagrams 20-Pin Plastic DIP (LH1263AE) Dimensions are in inches and (millimeters). 1,040 MAX 20 W | T MAX 1 10 7° TYP ALL SIDES 0.310 lh~ 0.140 MAX [- MAX "| 0.160 | ~ Eo.o6o max MAX | { l 100 Tvp-Le | lle coes max |+-0.400 max-| 4-138 AT&T Microelectronics M@™ 0050026 0019761 786

Data Book Packaging and Ordering Information ee reMMMMSM ooo SSI Nm Packaging and Ordering Information Throughout this section the following abbreviations are used: DIP — Dual in-line package; SOG — ‘Small-outline gull wing; SOJ — Small-outline J-lead; SONB — Small-outline narrow body; PLCC — Plastic leaded chip carrier. [Bevo Code [Pakage type [Temperature [-———artrestar in tc oC 85 [artesian 2 rine 0 Cte v0 [arsine erin 0 to 52 ee | _——artresonar Pin acto eso [artistas Pin, SN | a tos [= perenne ase a a a [——tarasar ene across [tiaras ain Pe 09 Ct es [arian in 08 acto 85 [tesa 20 Pin, Sto vs es = co [se P28 Pin Pato ese [a 7608, UCT aw 058 [or ss0e E28 0S 86S [oso LCE a0 tae [ste 26 20 Pin, Soto se [sta in, eto vase | ee ee [ar rsta=PE 16 Pin, S000 8s [sae ein, ore ee a NE AT&T Microelectronics We 0050026 0020230 280 8