LB125E

LB125E DCCOM | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 1

Technical content

DC COMPONENTS CO., LTD. TECHNICAL SPECIFICA TIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Pinning 1 = Base 2 = Collector 3 = Emitter

Description

Designed for lighting applications and switch mode power supplies. Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 600 V Collector-Emitter Voltage VCEO 400 V Emitter-Base Voltage VEBO 9 V Collector Current(DC) IC 5 A Collector Current(Pluse) IC 8 A Total Power Dissipation(TC=25oC) PD 40 W Junction Temperature TJ +150 oC Storage Temperature TSTG -55 to +150 oC Absolute Maximum Ratings(TA=25oC) TO-220AB Dimensions in inches and (millimeters) .625(15.87) .500(12.70) .055(1.39) .045(1.15) .185(4.70) .173(4.40) .405(10.28) .380(9.66) .295(7.49) .220(5.58) .350(8.90) .330(8.38) .640 (16.25) Typ .055(1.40) .045(1.14) .037(0.95) .030(0.75) .100 (2.54)Typ .024(0.60) .014(0.35) Φ.151 Φ(3.83) Typ 1 2 3 Rank B1 B2 B3 B4 B5 Range 8~17 15~21 19~25 23~31 29~35 Classification of hFE1 Characteristic Symbol Min Typ Max Unit Test Conditions Collector-Base Breakdown Volatge BVCBO 600 - - V IC=1mA, IE=0 Collector-Emitter Breakdown Voltage BVCEO 400 - - V IC=10mA, IB=0 Emitter-Base Breakdown Volatge BVEBO 9 - - V IE=10mA, IC=0 Collector Cutoff Current ICBO - - 100 µA VCB=800V, IE=0 ICEO - - 100 µA VCE=400V, IB=0 VCE(sat)1 - - 0.5 V IC=1A, IB=0.2A Collector-Emitter Saturation Voltage(1) VCE(sat)2 - - 0.7 V IC=2A, IB=0.4A VCE(sat)3 - - 1.1 V IC=3A, IB=0.75A Base-Emitter Saturation Voltage(1) VBE(sat)1 - - 1.1 V IC=1A, IB=0.2A VBE(sat)2 - - 1.2 V IC=2A, IB=0.4A DC Current Gain(1) hFE1 8 - 35 - IC=2A, VCE=5V hFE2 10 - - - IC=10mA, VCE=5V

Electrical Characteristics

(Ratings at 25oC ambient temperature unless otherwise specified) (1)Pulse Test: Pulse Width 380µs, Duty Cycle 2%