LB124E DCCOM | Alldatasheet
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Technical content
DC COMPONENTS CO., LTD. TECHNICAL SPECIFICA TIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Pinning 1 = Base 2 = Collector 3 = Emitter
Description
Designed for high voltage, high speed switching circuits, and amplifier applications. Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 600 V Collector-Emitter Voltage VCEO 400 V Emitter-Base Voltage VEBO 8 V Collector Current(DC) IC 2 A Collector Current(Pluse) IC 4 A Total Power Dissipation(TC=25oC) PD 35 W Junction Temperature TJ +150 oC Storage Temperature TSTG -55 to +150 oC Absolute Maximum Ratings(TA=25oC) TO-220AB Dimensions in inches and (millimeters) .625(15.87) .500(12.70) .055(1.39) .045(1.15) .185(4.70) .173(4.40) .405(10.28) .380(9.66) .295(7.49) .220(5.58) .350(8.90) .330(8.38) .640 (16.25) Typ .055(1.40) .045(1.14) .037(0.95) .030(0.75) .100 (2.54)Typ .024(0.60) .014(0.35) Φ.151 Φ(3.83) Typ 1 2 3 Characteristic Symbol Min Typ Max Unit Test Conditions Collector-Base Breakdown Volatge BVCBO 600 - - V IC=1mA, IE=0 Collector-Emitter Breakdown Voltage BVCEO 400 - - V IC=10mA, IB=0 Emitter-Base Breakdown Volatge BVEBO 8 - - V IE=1mA, IC=0 Collector Cutoff Current ICBO - - 10 µA VCB=600V, IE=0 Emitter Cutoff Current IEBO - - 10 µA VEB=9V, IC=0 Collector-Emitter Saturation Voltage(1) VCE(sat)1 - - 0.3 V IC=0.1A, IB=10mA VCE(sat)2 - - 0.8 V IC=0.3A, IB=30mA Base-Emitter Saturation Voltage(1) VBE(sat)1 - - 0.9 V IC=0.1A, IB=10mA VBE(sat)2 - - 1.2 V IC=0.3A, IB=30mA hFE1 10 - 40 - IC=0.3A, VCE=5V DC Current Gain(1) hFE2 10 - - - IC=0.5A, VCE=5V hFE3 6 - - - IC=1A, VCE=5V Transition Frequency fT 15 - - MHz IC=0.3A, VCE=10V, f=100MHz
Electrical Characteristics
(Ratings at 25oC ambient temperature unless otherwise specified) (1)Pulse Test: Pulse Width 380µs, Duty Cycle 2% Rank B1 B2 B3 B4 B5 B6 Range 10~17 13~22 18~27 23~32 28~37 33~40 Classification of hFE1